NVCW3SS0D5N03CLA [ONSEMI]
Power MOSFET, N-Channel, Logic Level, 30V, 0.52mΩ, Bare Die;
| 型号： | NVCW3SS0D5N03CLA |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, Logic Level, 30V, 0.52mΩ, Bare Die |
| 文件： | 总6页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single
N-Channel
30 V, 0.52 mW
NVCW3SS0D5N03CLA
Features
• Typical RDS(on) = 0.43 mW at VGS = 10 V
• Typical Qg(tot) = 139 nC at VGS = 10 V
• AEC−Q101 Qualified
• RoHS Compliant
DIMENSION (mm)
ORDERING INFORMATION
Die Size
3683 x 3000
80
Device
Package
Scribe Width
NVCW3SS0D5N03CLA
Unsawn wafer on ring
frame
Source Attach Area
Gate Attach Area
Die Thickness
3462 x 2708
200 x 200
76.2
RECOMMENDED STORAGE CONDITIONS
Gate: AlCu
Source: Ti−NiV−Ag
Drain: Ti−Ni−Ag (back side of die)
Passivation: Polyimide
Temperature
RH
22 to 28°C
44% to 66%
Wafer Diameter: 8 inch
Bad dice identified in Inking
Gross Die Count: 2458
The Chip is 100% Probed to Meet the Conditions and Limits Specified at T = 25°C
J
Symbol
BV
Parameter
Condition
= 250 mA, V = 0 V
Min
Typ
−
Max
−
Unit
V
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Bare Die Drain to Source On Resistance
I
30
−
DSS
D
GS
I
V
= 24 V, V = 0 V
−
1
mA
nA
V
DSS
DS
GS
GS
I
V
= 20 V, V = 0 V
−
−
100
2.2
0.52
0.85
GSS
DS
V
GS(th)
V
I
= V , I = 250 mA
1.3
−
−
GS
DS
D
R
*
= 30 A, V = 10 V
0.43
0.68
mW
mW
DS(on)
D
D
GS
I
= 30 A, V = 4.5 V
−
GS
*Accurate R
test at die level is not feasible for this thin die as limited by the test contact precision attainable in a die form. The max R
DS(on)
DS(on)
DS(on)
specification is defined from the historical performance of the die in package but is not guaranteed by test in production. The die R
performance depends on the Source wire/ribbon bonding layout.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
NVCW3SS0D5N03CLA/D
April, 2022 − Rev. 0
NVCW3SS0D5N03CLA
ABSOLUTE MAXIMUM RATINGS in Reference to the NVMFS4C01N electrical data in SO−8FL (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Ratings
Unit
V
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current R
30
20
V
GS
V
I
D
(Note 1,3)
T
T
= 25°C
= 25°C
370
A
qJC
C
P
D
Power Dissipation R
(Note 1,3)
161
W
qJC
C
E
Single Pulse Avalanche Energy (I
= 35 A)
862
mJ
°C
AS
L(pk)
T
T
Operating and Storage Temperature
–55 to +175
J, STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS in Reference to the NVMFS4C01N electrical data in SO−8FL (Note 1)
Symbol
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max (Note 2)
Value
0.93
39
Unit
°C/W
°C/W
R
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
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2
NVCW3SS0D5N03CLA
ELECTRICAL CHARACTERISTICS in Reference to the NVMFS4C01N electrical data in SO−8FL (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
I
= 250 mA, V = 0 V
30
−
−
−
−
−
1
V
DSS
D
GS
I
V
= 24 V, V = 0 V
mA
nA
DSS
DS
GS
GS
I
V
= 20 V, V = 0 V
−
100
GSS
DS
ON CHARACTERISTICS (Note 4)
V
R
Gate to Source Threshold Voltage
V
= V I = 250 mA
DS, D
1.3
−
2.2
V
GS(th)
GS
Drain to Source On−Resistance
V
= 10 V, I = 30 A
0.56
0.76
0.67
0.95
mW
mW
DS(on)
GS
GS
D
V
= 4.5 V, I = 30 A
−
D
CHARGES AND CAPACITANCES
C
Input Capacitance
V
= 15 V, V = 0 V,
−
−
−
−
−
−
10144
5073
148
63
−
−
−
−
−
−
pF
pF
pF
nC
nC
nC
nC
iss
DS
GS
f = 1 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Total Gate Charge
rss
Q
V
= 4.5 V, V = 15 V I = 30 A
GS DS , D
g(ToT)
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Total Gate Charge
29
gs
gd
Q
13
Q
V
= 10 V, V = 15 V I = 30 A
139
g(ToT)
GS
DS
, D
SWITCHING CHARACTERISTICS (Note 5)
t
Turn−On Delay Time
Rise Time
V
GS
= 4.5 V, V = 15 V, I = 15 A
−
−
−
−
29
68
53
36
−
−
−
−
ns
ns
ns
ns
d(on)
DS
D
R
= 3.0 W
G
t
r
t
Turn−Off Delay Time
Fall Time
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Voltage
Reverse Recovery Time
I
= 10 A, V = 0 V
−
−
−
−
1.1
−
V
SD
S
GS
t
V
GS
= 0 V dI /dt = 100 A/mA,
87
ns
nC
rr
,
S
I
S
= 30 A
Q
Reverse Recovery Charge
147
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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3
NVCW3SS0D5N03CLA
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
400
10 V
V
DS
= 3 V
3.4 V
350
300
250
200
150
100
50
3.6 V
3.2 V
3.0 V
4.5 V
T = 25°C
J
2.8 V
= 2.6 V
2.5
T = 150°C
J
V
GS
T = −55°C
J
0
0
0.0
0.5
1.0
1.5
2.0
3.0
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
T = 25°C
I
= 30 A
J
D
T = 25°C
J
V
= 4.5 V
GS
V
= 10 V
200
GS
3
4
5
6
7
8
9
10
0
50
100
150
250
300
350 400
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100000
10000
1000
100
1.8
V
= 10 V
= 30 A
GS
I
D
1.6
1.4
1.2
1.0
T = 125°C
J
T = 100°C
J
T = 85°C
J
0.8
0.6
10
0
5
10
15
20
25
30
−50 −25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NVCW3SS0D5N03CLA
TYPICAL CHARACTERISTICS
18
15
12
9
100k
10k
12
11
10
Q
T
C
ISS
V
V
V
9
8
7
6
5
4
3
2
DS
GS
C
OSS
1k
Q
GD
Q
GS
6
V
= 0 V
GS
= 15 V
DS
= 30 A
100
10
T = 25°C
J
C
RSS
I
D
f = 1 MHz
3
0
T = 25°C
J
1
0
0.1
1
10
100
0
20
40
60
80
100
120
140
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
1000
100
10
t
d(off)
V
V
I
= 4.5 V
= 15 V
= 15 A
GS
DD
t
D
r
t
f
t
d(on)
100
10
1
T = 150°C
J
T = −55°C
J
T = 25°C
J
0.1
0.1
1
10
100
0.3
0.4
V
0.5
0.6
0.7
0.8
0.9
1.0
R , GATE RESISTANCE (W)
G
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
10 ms
100
100 ms
V
T
≤ 10 V
= 25°C
GS
10
1
C
R
Limit
DS(on)
1 ms
Thermal Limit
Package Limit
10 ms
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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5
NVCW3SS0D5N03CLA
TYPICAL CHARACTERISTICS
100
10
1
R
= Steady State = 39°C/W
q
JA
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
CB
Cu Area = 650 mm
P
CB
Cu Thk = 2 oz
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 12. Thermal Impedance (Junction−to−Ambient)
1000
100
10
1
T
= 25°C
J(initial)
T
= 100°C
J(initial)
1.00E−04
1.00E−03
1.00E−02
TIME IN AVALANCHE (s)
Figure 13. Avalanche Characteristics
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