NVCR4LS1D4N10MCA [ONSEMI]
Power MOSFET, N-Channel, 100 V, 1.4 mΩ, Bare Die;
| 型号： | NVCR4LS1D4N10MCA |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, 100 V, 1.4 mΩ, Bare Die |
| 文件： | 总6页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, N-Channel
100 V, 1.4 mW
NVCR4LS1D4N10MCA
Features
• Typical R
• Typical Q
= 1.1 mꢀ at V = 10 V
GS
DS(on)
= 131 nC at V = 10 V
g(tot)
GS
• AEC−Q101 Qualified
• RoHS Compliant
ORDERING INFORMATION
DIMENSION (mm)
Die Size
Device
Package
7080 × 4515
NVCR4LS1D4N10MCA
Wafer
Sawn on Foil
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
7060 15 × 4495 15
(6508 × 2055.6) × 2
330 × 600
RECOMMENDED STORAGE CONDITIONS
Temperature
RH
22 to 28°C
101.6 19.1
40 to 66%
Gate and Source: AlSiCu
Drain: Ti−NiV−Ag (back side of die)
Passivation: Polyimide
Wafer Diameter: 8 inch
Wafer Sawn on UV Tape
Bad Dice Identified in Inking
Gross Die Counts: 765
The Chip is 100% Probed to Meet the Conditions and Limits
Specified at T = 25°C.
J
Symbol
BV
Parameter
Condition
I = 250 ꢁ A, V = 0 V
D
Min
100
−
Typ
−
Max
−
Unit
V
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Bare Die Drain to Source On Resistance
Source to Drain Diode Voltage
DSS
GS
I
V
DS
V
GS
V
GS
= 100 V, V = 0 V
−
10
ꢁ A
nA
V
DSS
GS
I
=
20 V, V = 0 V
−
−
100
4.0
1.4
1.3
−
GSS
DS
V
GS(th)
= V , I = 799 ꢁ A
2.0
−
−
DS
D
*R
I
I
= 40 A, V = 10 V
1.1
−
mꢀ
DS(on)
D
GS
*V
SD
= 40 A, V = 0 V
−
V
SD
GS
E
AS
Single Pulse Drain−to−Source
Avalanche Energy
L = 0.3 mH, I = 65 A
633
−
mJ
AS
*Accurate R
, V test at die level is not feasible as limited by the test contact precision attainable in a die form. The max R
, V
DS(on)
SD
DS(on)
SD
DS(on)
specification is defined from the historical performance of the die in package but is not guaranteed by test in production. The die R
performance depends on the Source wire/ribbon bonding layout.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
NVCR4LS1D4N10MCA−DIE/D
August, 2022 − Rev. 0
NVCR4LS1D4N10MCA
MOSFET MAXIMUM RATINGS in Reference to the NVBLS1D5N10MC electrical data in TOLL
(T = 25°C unless otherwise noted)
J
Symbol
Parameter
Ratings
100
Unit
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current R
V
V
A
V
GS
20
I
D
(V = 10) (Note 1)
GS
ꢂ
J
C
T
C
T
C
= 25°C
300
214
= 100°C
E
Single Pulse Avalanche Energy (Note 2)
Power Dissipation R
633
331
mJ
W
AS
P
D
ꢂ
JC
Derate Above 25°C
2.2
W/°C
°C
T , T
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient (Note 3)
−55 to +175
0.45
J
STG
R
°C/W
°C/W
ꢂ
JC
JA
R
33
ꢂ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by silicon.
2. Starting T = 25°C, L = 0.3 mH, I = 65 A, V = 100 V during inductor charging and V = 0 V during time in avalanche.
J
AS
DD
DD
3. R
is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder
ꢂ
JA
mounting surface of the drain pins. R
presented here is based on mounting on a 650 mm pad of 2oz copper.
is guaranteed by design, while R
is determined by the board design. The maximum rating
ꢂ
ꢂ
JC
JA
2
ELECTRICAL CHARACTERISTICS in Reference to the NVBLS1D5N10MC electrical data in TOLL
(T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
I
= 250 ꢁ A, V = 0 V
100
−
−
−
−
−
V
DSS
D
GS
I
V
V
= 100 V, V = 0 V
10
100
ꢁ A
nA
DSS
DS
GS
GS
I
=
20 V
−
GSS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
Drain to Source on Resistance
V
= V , I = 799 ꢁ A
2.0
−
4.0
1.5
V
GS(th)
DS(on)
GS
DS
D
R
I
D
= 80 A, V = 10 V
−
1.2
mꢀ
GS
DYNAMIC CHARACTERISTICS
V
= 50 V, V = 0 V, f = 1 MHz
C
Input Capacitance
−
−
−
−
−
−
−
10100
5100
84
−
−
−
−
−
−
−
pF
DS
GS
iss
C
Output Capacitance
pF
pF
nC
nC
nC
nC
oss
C
Reverse Transfer Capacitance
Total Gate Charge
rss
V
GS
= 10 V, V = 50 V, I = 80 A
Q
131
25
DS
D
g(ToT)
Q
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
g(th)
Q
49
gs
gd
Q
21
SWITCHING CHARACTERISTICS
V
V
= 50 V, I = 80 A,
t
Turn−On Delay
Rise Time
−
−
−
−
39
71
83
90
−
−
−
−
ns
ns
ns
ns
DS
G
D
d(on)
= 10 V, R = 6
ꢀ
G
t
r
t
Turn−Off Delay
Fall Time
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTIC
V
Source to Drain Diode Voltage
Reverse Recovery Time
I
= 80 A, V = 0 V
−
−
−
−
1.3
−
V
SD
SD
GS
I = 71 A, dI /dt = 100 A/ꢁ s
F
t
110
143
ns
nC
SD
rr
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVCR4LS1D4N10MCA
TYPICAL CHARACTERISTICS
300
250
200
150
100
500
V
GS
= 10 V to 6 V
V
DS
= 10 V
450
400
350
300
250
200
150
5.0 V
4.8 V
T = 25°C
J
4.6 V
4.4 V
100
50
0
50
0
T = 150°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8
7
6
5
4
3
2
3
2
T = 25°C
T = 25°C
D
J
J
I
= 80 A
V
= 10 V
GS
1
0
1
0
4
5
6
7
8
9
10
11
10 20
30
40
50
60
70
80
90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
1.5
100
10
1
V
= 10 V
= 80 A
T = 175°C
J
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.1
0.01
0.001
T = 25°C
J
1.0
0.5
0.0001
−50 −25
0
25
50
75 100 125 150 175
10 20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVCR4LS1D4N10MCA
TYPICAL CHARACTERISTICS
10
9
100K
10K
1K
C
ISS
8
7
6
5
4
3
C
OSS
Q
Q
GD
GS
100
C
RSS
T = 25°C
D
J
V
= 0 V
2
1
0
GS
10
1
I
= 80 A
T = 25°C
J
V
DS
= 50 V
f = 1 MHz
0
20
40
60
80
100
120
140
0
10 20 30 40
50 60 70 80
90 100
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
100
V
V
I
= 10 V
= 50 V
= 80 A
V
GS
= 0 V
GS
t
d(off)
t
f
DS
t
r
D
t
d(on)
10
10
1
T = 125°C T = 25°C
T = −55°C
J
J
J
1
1
10
R , GATE RESISTANCE (ꢀ)
100
0.4
0.5
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
10 ꢁ s
T
= 25°C
J(initial)
T
C
= 25°C
Single Pulse
≤ 10 V
0.5 ms
1 ms
10 ms
T
= 150°C
10
1
V
GS
J(initial)
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (s)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVCR4LS1D4N10MCA
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.1
0.2
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
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5
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