NTLUD3C20CZ [ONSEMI]
Small Signal MOSFET;
| 型号： | NTLUD3C20CZ |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal MOSFET |
| 文件： | 总4页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTLUD3C20CZ
Product Preview
Small Signal MOSFET
12 V, Complementary, 2.0 x 2.0 mm UDFN
Package
www.onsemi.com
Features
• Advanced Trench Complementary MOSFET
• Low RDS(on)
V
R
Max
I Max
D
(BR)DSS
DS(on)
• Low Profile UDFN 2.0x2.0x0.55mm for Board Space Saving
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
23 mW @ 4.5 V
26 mW @ 3.3 V
N−Channel
12 V
6.4 A
31 mW @ 2.5 V
59 mW @ 1.8 V
44 mW @ −4.5 V
55 mW @ −3.3 V
75 mW @ −2.5 V
175 mW @ −1.8 V
Applications
• Power Load Switch
• Load Switch with Level Shift
• Optimized for Power Management in Ultra Portable Devices
P−Channel
−12 V
−4.6 A
MAXIMUM RATINGS (T = 25°C unless otherwise specified)
SYMBOLS AND PIN CONNECTIONS
J
D1
S2
Parameter
Symbol Value Unit
NMOS
PMOS
NMOS
PMOS
12
Drain−to−Source Voltage
V
V
V
DSS
12
8.0
G1
G2
Gate−to−Source Voltage
V
GS
8.0
D2
S1
T = 25°C
6.4
A
Steady
State
N−Channel
Continuous Drain
Current (Note 1)
NMOS
PMOS
T = 85°C
A
4.6
I
A
A
D
t v 5 s
Steady
State
T = 25°C
A
8.1
T = 25°C
A
−4.6
−3.3
−5.9
1.40
P−Channel
Continuous Drain
Current (Note 1)
T = 85°C
A
I
D
t v 5 s
Steady
State
T = 25°C
A
T = 25°C
A
W
W
Power Dissipation
(Note 1)
P
D
t v 5 s
NMOS
PMOS
T = 25°C
A
2.29
21
MARKING DIAGRAM
Pulsed Drain Current
t = 10 ms
p
I
A
A
DM
14
1
UDFN6
CASE 527AD
AAMG
I
1.6
−1.6
S
G
Source Current (Body Diode)
AA = Specific Device Code
= Date Code
T ,
STG
−55 to
150
J
M
Operating Junction and Storage Temperature
°C
°C
T
(Note: Microdot may be in either location)
Lead Temperature for Soldering Purposes (1/8”
from case for 10 s)
260
T
L
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq), 1 oz. Cu.
†
Device
Package
Shipping
NTLUD3C20CZTAG
NTLUD3C20CZTBG
UDFN6
(Pb−Free)
3000 / Tape &
Reel
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
July, 2016 − Rev. P2
NTLUD3C20CZ/D
NTLUD3C20CZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
89.3
Unit
Junction−to−Ambient – Steady State, Minimum Pad (Note 1)
°C/W
R
q
JA
Junction−to−Ambient – t v 5 s (Note 1)
54.6
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
FET
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
N
P
N
P
I
= 250 mA
12
D
Drain−to−Source Breakdown Voltage
V
V
= 0 V
V
mV/°C
mA
(BR)DSS
GS
I
D
= −250 mA
−12
TBD
TBD
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
(BR)DSS
T
J
T = 25°C
J
1
N
P
V
= 0 V, V = 9.6 V
GS DS
T = 125°C
10
J
Zero Gate Voltage Drain Current
I
DSS
T = 25°C
J
−1
V
GS
= 0 V, V = −9.6 V
mA
DS
T = 125°C
−10
100
100
J
N
P
Gate−to−Source Leakage Current
I
V
= 0 V, V
=
8.0 V
nA
GSS
DS
GS
ON CHARACTERISTICS (Note 2)
N
P
N
P
I
= 250 mA
0.4
1.0
D
Gate Threshold Voltage
V
V
= V
V
GS(TH)
GS
DS
I
D
= −250 mA
−0.4
−1.0
TBD
TBD
18
Negative Threshold Temperature
Coefficient
V
/ T
mV/°C
GS(TH)
J
V
GS
V
GS
V
GS
V
GS
= 4.5 V
= 3.3 V
= 2.5 V
= 1.8 V
I
I
= 5 A
= 5 A
23
26
31
59
44
55
75
175
D
21
D
N
P
I
= 4.6 A
25
D
I
= 4 A
= −4 A
= −4 A
= −3 A
= −1 A
= 5 A
47
D
Drain−to−Source On Resistance
R
mW
DS(on)
V
GS
= −4.5 V,
= −3.3 V
= −2.5 V,
= −1.8 V
I
35
D
D
D
D
V
I
I
I
44
GS
GS
V
60
V
GS
140
TBD
TBD
N
P
V
= 5 V
I
D
DS
Forward Transconductance
g
FS
S
V
DS
= −5 V
I
= −4 A
D
CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Capacitance
Input Capacitance
Output Capacitance
Reverse Capacitance
C
1074
147
ISS
f = 1 MHz, V = 0 V
GS
C
N
P
OSS
RSS
V
DS
= 9.6 V
C
139
pF
C
1201
150
ISS
f = 1 MHz, V = 0 V
GS
= −9.6 V
C
OSS
C
RSS
V
DS
145
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Switching characteristics are independent of operating junction temperatures
www.onsemi.com
2
NTLUD3C20CZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
FET
Test Condition
Min
Typ
Max
Unit
CHARGES
Total Gate Charge
Q
10.8
0.8
1.9
2.4
12.6
0.9
1.7
2.8
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
N
V
= 4.5 V, V = 9.6 V, I = 5 A
GS DS D
Q
GS
GD
Q
nC
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
P
V
= −4.5 V, V = −9.6 V, I = −4 A
GS DS D
Q
GS
GD
Q
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
t
7.6
22
d(ON)
t
r
N
P
V
= 4.5 V, V = 9.6 V, R = 1.0 W
GS DS G
Turn−Off Delay Time
Fall Time
t
22
d(OFF)
t
f
4.0
6.8
18
ns
Turn−On Delay Time
Rise Time
t
d(ON)
t
r
V
GS
= −4.5 V, V = −9.6 V, R = 1.0 W
DD
G
Turn−Off Delay Time
Fall Time
t
33
d(OFF)
t
f
9.9
DRAIN−SOURCE DIODE CHARACTERISTICS
T = 25°C
0.8
1.1
J
N
P
V
= 0 V, I = 1.0 mA
S
GS
T = 125°C
J
TBD
−0.8
TBD
Forward Diode Voltage
V
SD
V
T = 25°C
J
−1.1
V
GS
= 0 V, I = −1.0 mA
S
T = 125°C
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Switching characteristics are independent of operating junction temperatures
www.onsemi.com
3
NTLUD3C20CZ
PACKAGE DIMENSIONS
UDFN6 2x2, 0.65P
CASE 517BF
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
D
A
B
EXPOSED Cu
MOLD CMPD
PLATING
DETAIL B
OPTIONAL
CONSTRUCTIONS
PIN ONE
REFERENCE
MILLIMETERS
E
DIM
A
MIN
0.45
0.00
MAX
0.55
0.05
A1
A3
b
0.10
C
0.13 REF
0.25
0.57
0.35
L
L
D
2.00 BSC
0.10
C
D2
E
0.77
1.10
TOP VIEW
2.00 BSC
L1
E2
e
0.90
A
0.65 BSC
0.15 BSC
0.25 REF
DETAIL B
DETAIL A
OPTIONAL
CONSTRUCTIONS
A3
F
0.10
C
C
K
L
0.20
---
0.30
0.10
L1
0.08
A1
SEATING
PLANE
NOTE 4
C
SIDE VIEW
0.10
D2
C
A
B
D2
DETAIL A
F
1
3
L
E2
0.10
C
A
B
6
4
K
6X b
0.10
0.05
C
C
A
B
e
NOTE 3
BOTTOM VIEW
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTLUD3C20CZ/D
相关型号：
NTLUF4189NZ
Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package
ONSEMI
NTLUF4189NZTAG
Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package
ONSEMI
NTLUF4189NZTBG
Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package
ONSEMI
©2020 ICPDF网 联系我们和版权申明