NTLUS020N03CTAG [ONSEMI]
MOSFET，N 沟道，30V，15mΩ，UDFN;
| 型号： | NTLUS020N03CTAG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET，N 沟道，30V，15mΩ，UDFN |
| 文件： | 总8页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTLUS020N03C
MOSFET – Power, Single,
N-Channel, mCool, UDFN6,
1.6x1.6x0.55 mm
30 V, 13 mW, 8.2 A
www.onsemi.com
MOSFET
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
13 mW @ 10 V
18 mW @ 4.5 V
• Ultra Low R
30 V
8.2 A
DS(on)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
D
Applications
• Power Load Switch
• Wireless Charging
• DC−DC Converters
• Motor Drive
G
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain-to-Source Voltage
Symbol
Value
30
Unit
V
S
V
DSS
N−CHANNEL MOSFET
Gate-to-Source Voltage
Continuous Drain
V
GS
20
V
T = 25°C
I
D
8.2
A
A
MARKING DIAGRAM
Current R
θJA
S
D
T = 85°C
A
5.9
Steady
State
(Note 1, 3)
1
UDFN6
(mCOOL)
CASE 517AU
Power Dissipation
T = 25°C
A
P
D
1.52
W
A
ALMG
R
(Note 1, 3)
θJA
G
Continuous Drain
T = 25°C
A
I
D
5.3
3.8
AL = Specific Device Code
M = Date Code
Current R
θJA
T = 85°C
A
Steady
State
(Note 2, 3)
G
= Pb−Free Package
Power Dissipation
T = 25°C
A
P
D
0.65
W
(Note: Microdot may be in either location)
R
(Note 2, 3)
θJA
Pulsed Drain Current
t = 10 ms
p
I
24
A
DM
PIN CONNECTIONS
Operating Junction and Storage
Temperature
T , T
-55 to
150
°C
J
STG
Lead Temperature for Soldering Purposes
T
260
°C
L
D
D
G
1
2
3
6
5
4
D
D
S
(1/8″ from case for 10 s)
D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
S
Junction-to-Ambient – Steady State
(Note 1, 3)
R
82.5
q
JA
(Top View)
°C/W
Junction-to-Ambient – Steady State min
Pad (Note 2, 3)
R
194.8
q
JA
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
2
1. Surface−mounted on FR4 board using 1 in pad size, 2 oz Cu pad.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
May, 2019 − Rev. 2
NTLUS020N03C/D
NTLUS020N03C
2. Surface-mounted on FR4 board using the min pad size, 2 oz Cu pad.
3. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
4. This device does not have ESD protection diode.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 250 mA, ref to 25°C
D
13.4
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
1.0
10
mA
DSS
GS
DS
J
V
T = 125°C
J
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
100
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.2
2.2
V
GS(TH)
DS
D
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
V
/T
I
= 250 mA, ref to 25°C
−4.2
10
mV/°C
mW
GS(TH)
J
D
R
V
= 10 V, I = 8.0 A
13
18
DS(on)
GS
D
V
= 4.5 V, I = 8 A
14
GS
DS
D
Forward Transconductance
CHARGES & CAPACITANCES
Input Capacitance
g
FS
V
= 1.5 V, I = 8 A
24
S
D
C
620
280
15
pF
ISS
V
GS
= 0 V, f = 1 MHz,
DS
Output Capacitance
C
C
OSS
RSS
V
= 15 V
Reverse Transfer Capacitance
Total Gate Charge
Q
5
nC
G(TOT)
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
Q
0.8
1.8
1.6
11
G(TH)
V
= 4.5 V, V = 15 V;
DS
GS
I
= 8 A
D
Q
GS
Q
GD
Q
V
= 10 V, V = 15 V; I = 8 A
nC
ns
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
Rise Time
t
9
26
13
3
d(ON)
t
r
V
GS
= 4.5 V, V = 15 V,
DD
I
= 8 A, R = 6 W
D
G
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6)
Turn-On Delay Time
Rise Time
t
6
ns
d(ON)
t
r
24
16
2.3
V
GS
I
= 10 V, V = 15 V,
DD
= 8 A, R = 6 W
D
G
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
0.8
0.7
1
V
J
V
= 0 V,
GS
S
I
= 8 A
T = 125°C
J
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTLUS020N03C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Charge Time
t
23
12
11
10
ns
RR
t
t
a
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
= 8 A
S
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
3
NTLUS020N03C
TYPICAL CHARACTERISTICS
6
5
4
3
2
1
6
2.6 V
V
= 10 V
DS
5
4
3
2
V
GS
= 10 V to 2.8 V
2.4 V
2.2 V
T = 25°C
J
1
0
T = −55°C
J
T = 125°C
J
0
0
1
2
3
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
25
20
15
10
25
20
15
10
T = 25°C
D
J
I
T = 25°C
J
= 8 A
V
= 4.5 V
= 10 V
GS
V
GS
5
0
5
0
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
10,000
1,000
100
T = 150°C
J
V
= 10 V
= 8 A
GS
I
D
T = 125°C
J
T = 85°C
J
10
1
0.8
0.7
−50 −25
0
25
50
75
100
125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
4
NTLUS020N03C
TYPICAL CHARACTERISTICS
1000
100
10
C
iss
8
6
4
C
oss
Q
Q
10
1
GD
GS
V
DS
= 4.5 V
V
= 0 V
GS
2
0
C
rss
I
D
= 8 A
T = 25°C
J
0
5
10
15
20
25
30
0
2
4
6
8
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
10
V
V
= 4.5 V
= 15 V
GS
T = −55°C
J
DS
T = 125°C
J
I
D
= 8 A
t
r
30
t
t
d(off)
T = 25°C
J
d(on)
t
f
3
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1
10 ms
100 ms
1 ms
V
GS
≤ 10 V
Single Pulse
= 25°C
10 ms
T
C
0.1
R
Limit
DS(on)
dc
Thermal Limit
Package Limit
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
www.onsemi.com
5
NTLUS020N03C
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.1
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Package
Shipping
NTLUS020N03CTAG
UDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517AU−01
ISSUE O
6
DATE 16 OCT 2008
1
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
A
B
D
L1
2X
L
0.10
C
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
PIN ONE
E
DETAIL A
OPTIONAL
REFERENCE
MILLIMETERS
CONSTRUCTION
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
2X
A
0.10
C
MOLD CMPD
EXPOSED Cu
A3
b
D
E
0.13 REF
TOP VIEW
0.20
0.30
1.60 BSC
1.60 BSC
0.50 BSC
A3
A
DETAIL B
e
(A3)
A1
D1 0.62
D2 0.15
E2 0.57
0.72
0.25
0.67
0.05
0.05
C
C
A1
DETAIL B
F
G
L
0.55 BSC
0.25 BSC
0.20
OPTIONAL
CONSTRUCTION
0.30
0.15
SEATING
PLANE
NOTE 4
C
L1
−−−
SIDE VIEW
GENERIC
MARKING DIAGRAM*
0.10
C
A
B
e
F
1
D2
E2
XX MG
3
1
G
G
6X L
0.10
C
A
B
XX= Specific Device Code
M = Date Code
6
4
6X b
DETAIL A
G
= Pb−Free Package
(Note: Microdot may be in either location)
D1
BOTTOM VIEW
0.10
0.05
C
A
B
NOTE 3
C
*This information is generic. Please refer
to device data sheet for actual part
marking.
SOLDERMASK DEFINED
MOUNTING FOOTPRINT*
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.82
0.16
0.43
0.68
2X
0.35
1.90
0.28
1
0.50 PITCH
6X
0.32
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON35147E
UDFN6, 1.6X1.6, 0.5P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
NTLUS3192PZ
Power MOSFET −20 V, −4.2 A, Cool Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
ONSEMI
NTLUS3192PZTAG
Power MOSFET −20 V, −4.2 A, Cool Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
ONSEMI
NTLUS3192PZTBG
Power MOSFET −20 V, −4.2 A, Cool Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
ONSEMI
©2020 ICPDF网 联系我们和版权申明