NTLUD4C26N_16 [ONSEMI]
Power MOSFET;
| 型号： | NTLUD4C26N_16 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总7页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTLUD4C26N
Power MOSFET
30 V, 7.3 A, Dual N−Channel,
2.0x2.0x0.55 mm mCoolt UDFN6 Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
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MOSFET
• Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving
• Ultra Low R
DS(on)
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
21 mW @ 10 V
24 mW @ 4.5 V
26 mW @ 3.7 V
28 mW @ 3.3 V
36 mW @ 2.5 V
Compliant
Applications
30 V
7.3 A
• Power Load Switch
• Wireless Charging
• DC−DC Converters
65 mW @ 1.8 V
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
D1
D2
J
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
Value
30
Unit
V
V
DSS
G1
G2
V
GS
12
V
Continuous Drain
Current (Note 1)
Steady
State
T = 25°C
I
D
7.3
A
A
S1
Dual N−Channel MOSFET
S2
T = 85°C
A
5.3
t ≤ 5 s
T = 25°C
A
9.1
Power Dissipa-
tion (Note 1)
Steady
State
T = 25°C
P
1.70
W
A
MARKING
DIAGRAM
A
D
t ≤ 5 s
T = 25°C
A
2.63
4.8
1
6
UDFN6
CASE 517BF
mCOOLt
AC MG
Continuous Drain
Current (Note 2)
Steady
State
T = 25°C
A
I
D
G
1
T = 85°C
A
3.4
AC= Specific Device Code
M = Date Code
Power Dissipation (Note 2)
Pulsed Drain Current
T = 25°C
A
P
D
0.72
22
W
A
G
= Pb−Free Package
t = 10 ms
p
I
DM
(Note: Microdot may be in either location)
MOSFET Operating Junction and Storage
Temperature
T ,
-55 to
150
°C
J
T
STG
Source Current (Body Diode) (Note 1)
I
S
3.0
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size,
2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2016 − Rev. 2
NTLUD4C26N/D
NTLUD4C26N
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
73.6
Unit
Junction-to-Ambient – Steady State (Note 3)
R
θJA
Junction-to-Ambient – t ≤ 5 s (Note 3)
R
47.6
°C/W
θJA
Junction-to-Ambient – Steady State min Pad (Note 4)
R
174.4
θJA
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 250 mA, ref to 25°C
D
7
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 24 V
mA
T = 25°C
1
DSS
GS
DS
J
T = 125°C
J
10
100
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
DS
= 0 V, V =
GS
12 V
nA
GSS
V
V
GS
= V , I = 250 mA
0.6
1.1
V
GS(TH)
DS
D
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
V
/T
2.8
17.5
20
mV/°C
mW
GS(TH)
J
R
V
= 10 V, I = 6.0 A
21
24
26
28
36
65
DS(on)
GS
GS
GS
GS
GS
GS
DS
D
V
V
V
V
V
V
= 4.5 V, I = 5.0 A
D
= 3.7 V, I = 3.0 A
21
D
= 3.3 V, I = 3.0 A
22
D
= 2.5 V, I = 2.0 A
25
D
= 1.8 V, I = 1.0 A
40
D
Forward Transconductance
g
FS
= 1.5 V, I = 5.0 A
23
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
pF
Input Capacitance
C
460
225
27
ISS
V
= 0 V, f = 1 MHz,
GS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
DS
= 15 V
Q
V
V
= 4.5 V, V = 10 V;
5.0
8.0
9.0
nC
nC
G(TOT)
GS
DS
= 5.0 A
I
D
Total Gate Charge
Q
5.5
0.55
2.5
G(TOT)
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q
G(TH)
= 4.5 V, V = 15 V;
GS
DS
= 5.0 A
I
D
Q
GS
GD
Q
1.1
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 6)
GS
ns
Turn-On Delay Time
Rise Time
t
5
d(ON)
t
r
15
13
1.7
V
= 4.5 V, V = 15 V,
DD
GS
I
D
= 5.0 A, R = 1 W
G
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTLUD4C26N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
V
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
J
0.7
0.6
18.5
9.3
9.1
7.8
1.0
V
= 0 V,
GS
I
S
= 2.0 A
T = 125°C
J
ns
Reverse Recovery Time
Charge Time
t
RR
t
t
a
V
= 0 V, dIs/dt = 100 A/ms,
GS
I
S
= 2.0 A
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
DEVICE ORDERING INFORMATION
†
Device
NTLUD4C26NTAG
Package
Shipping
UDFN6
3000 / Tape & Reel
(Pb−Free)
NTLUD4C26NTBG
UDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTLUD4C26N
TYPICAL CHARACTERISTICS
25
20
15
10
5
25
T = 25°C
J
V
DS
= 5 V
V
GS
= 1.8 V
20
15
10
5
10 V to
2.0 V
T = 125°C
J
1.6 V
T = 25°C
J
1.2 V
T = −55°C
J
0
0
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
30
28
26
24
22
20
18
16
50
45
40
35
30
25
20
15
T = 25°C
T = 25°C
D
J
J
I
= 6 A
V
= 1.8 V
GS
V
= 2.5 V
= 3.3 V
= 4.5 V
V
= 3.7 V
GS
GS
V
GS
V
GS
V
GS
= 10 V
2
3
4
5
6
7
8
9
10
1
3
5
7
9
11
13
15
17
19
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.5
1.3
1.1
0.9
0.7
100000
10000
1000
100
10
V
= 10 V
= 6 A
GS
I
D
T = 150°C
J
T = 125°C
J
1
T = 85°C
J
V
GS
= 0 V
0
−50
−25
0
25
50
75
100
125
150
0
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
20
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTLUD4C26N
TYPICAL CHARACTERISTICS
1000
10
30
25
20
15
10
5
Q
T
C
iss
8
6
C
oss
100
4
2
0
Q
gd
Q
gs
C
rss
T = 25°C
DS
T = 25°C
GS
f = 1 MHz
J
V
J
V
= 15 V
= 0 V
I
D
= 5 A
0
10
10
0
5
10
15
20
25
30
0
2
4
6
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
2.0
1.0
0.0
100.0
t
d(off)
V
= 0 V
V
I
= 15 V
= 15 A
= 4.5 V
GS
DD
T = −55°C
J
t
D
f
V
GS
t
r
T = 25°C
J
10.0
t
d(on)
T = 125°C
J
1.0
1
10
R , GATE RESISTANCE (W)
100
0.0
0.1
0.2
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.3
0.4
0.5
0.6
0.7
0.8
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
I
D
= 250 mA
10 ms
100 ms
1
V
< 10 V
GS
1 ms
T = 25°C
Single Pulse Response
A
10 ms
0.1
0.01
R
Limit
DS(on)
dc
Thermal Limit
Package Limit
−50 −25
0
25
50
75
100 125 150 175
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Threshold Voltage
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5
NTLUD4C26N
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
0
1.E−04 1.E−03 1.E−02 1.E−01 1.E+00 1.E+01 1.E+02 1.E+03
SINGLE PULSE TIME (°C)
Figure 13. Single Pulse Maximum Power
Dissipation
1000
100
10
50% Duty Cycle
20%
10%
5%
1
2%
0.1
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 14. Thermal Response
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6
NTLUD4C26N
PACKAGE DIMENSIONS
UDFN6 2x2, 0.65P
CASE 517BF
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
D
A
B
EXPOSED Cu
MOLD CMPD
PLATING
DETAIL B
OPTIONAL
CONSTRUCTIONS
PIN ONE
REFERENCE
MILLIMETERS
E
DIM
A
MIN
0.45
0.00
MAX
0.55
0.05
A1
A3
b
0.10
C
0.13 REF
0.25
0.57
0.35
L
L
D
2.00 BSC
0.10
C
D2
E
0.77
1.10
TOP VIEW
2.00 BSC
L1
E2
e
0.90
A
0.65 BSC
0.15 BSC
0.25 REF
DETAIL B
DETAIL A
OPTIONAL
CONSTRUCTIONS
A3
F
0.10
C
C
K
L
0.20
---
0.30
0.10
L1
0.08
A1
SEATING
PLANE
NOTE 4
C
SIDE VIEW
RECOMMENDED
MOUNTING FOOTPRINT
0.10
D2
C
A
B
1.74
2X
0.77
D2
DETAIL A
F
1
3
1.10
6X
0.47
L
E2
2.30
0.10
C
A
B
PACKAGE
OUTLINE
6
4
K
6X b
1
0.65
PITCH
0.10
0.05
C
C
A
B
e
6X
0.35
NOTE 3
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
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ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
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NTLUD4C26N/D
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