NTLUF4189NZTBG [ONSEMI]
Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package; 功率MOSFET和肖特基二极管30 V ， N沟道0.5肖特基势垒二极管， 1.6 ×1.6× 0.55毫米？酷？包
| 型号： | NTLUF4189NZTBG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTLUF4189NZ
Power MOSFET and
Schottky Diode
30 V, N−Channel with 0.5 A Schottky
Barrier Diode, 1.6 x 1.6 x 0.55 mm
mCoolt Package
Features
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MOSFET
• Low Qg and Capacitance to Minimize Switching Losses
• Low Profile UDFN 1.6x1.6 mm for Board Space Saving
• Low VF Schottky Diode
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
1.5 A
0.5 A
0.5 A
• ESD Protected Gate
200 mW @ 4.5 V
250 mW @ 3.0 V
350 mW @ 2.5 V
30 V
• This is a Halide−Free Device
• This is a Pb−Free Device
Applications
SCHOTTKY DIODE
• DC-DC Boost Converter
• Color Display and Camera Flash Regulators
V
MAX
V TYP
I MAX
R
F
F
30 V
0.52 V
0.5 A
• Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
A
K
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
Value
30
Units
V
DSS
V
V
A
G
V
8.0
1.5
1.1
1.9
0.8
GS
Continuous Drain
Current (Note 1)
Steady
State
T = 25°C
I
D
A
S
T = 85°C
A
N−Channel MOSFET
Schottky Diode
t ≤ 5 s
T = 25°C
A
MARKING
DIAGRAM
Power Dissipation
(Note 1)
Steady
State
T = 25°C
A
P
W
A
D
1
UDFN6
CASE 517AT
mCOOLt
t ≤ 5 s
T = 25°C
A
1.3
1.2
0.9
0.5
8.0
6
AA MG
Continuous Drain
Current (Note 2)
Steady
State
T = 25°C
I
G
A
D
1
T = 85°C
A
Power Dissipation (Note 2)
Pulsed Drain Current
T = 25°C
P
W
A
AA= Specific Device Code
M = Date Code
G = Pb−Free Package
A
D
tp = 10 ms
I
DM
MOSFET Operating Junction and Storage
Temperature
T ,
STG
-55 to
150
°C
J
T
Schottky Operating Junction & Storage
Temperature
T ,
STG
-55 to
125
°C
J
PIN CONNECTIONS
K
T
Source Current (Body Diode) (Note 2)
I
S
1.5
A
A
N/C
D
K
G
S
1
6
5
4
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
2
3
Gate-to-Source ESD Rating
(HBM) per JESD22−A114F
ESD
1000
V
D
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
2. Surface-mounted on FR4 board using the minimum recommended pad size
2
of 30 mm , 2 oz. Cu.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
March, 2009 − Rev. 1
NTLUF4189NZ/D
NTLUF4189NZ
DEVICE ORDERING INFORMATION
Device
†
Package
Shipping
NTLUF4189NZTAG
UDFN6
3000 / Tape & Reel
3000 / Tape & Reel
(Pb−Free)
NTLUF4189NZTBG
UDFN6
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Schottky Diode Maximum Ratings (T = 25°C unless otherwise stated)
J
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Symbol
Value
30
Units
V
RRM
V
V
A
V
R
30
Average Rectified Forward Current
I
F
0.5
Thermal Resistance Ratings
Parameter
Symbol
Max
155
100
245
Units
Junction-to-Ambient – Steady State (Note 3)
R
°C/W
θJA
Junction-to-Ambient – t ≤ 5 s (Note 3)
R
θJA
Junction-to-Ambient – Steady State min Pad (Note 4)
R
θJA
MOSFET Electrical Characteristics (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 μA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 250 μA, ref to 25°C
D
22
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
10
10
mA
mA
DSS
J
V
= 0 V,
GS
DS
V
= 24 V
T = 85°C
J
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V
=
GS
8.0 V
GSS
DS
V
V
GS
= V , I = 250 mA
0.4
1.1
3.0
1.5
V
GS(TH)
DS
D
Negative Threshold Temp. Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
mW
GS(TH)
R
V
GS
V
GS
V
GS
= 4.5 V, I = 1.5 A
145
185
220
1.1
200
250
350
DS(on)
D
= 3.0 V, I = 0.5 A
D
= 2.5 V, I = 0.5 A
D
Forward Transconductance
CHARGES & CAPACITANCES
Input Capacitance
g
FS
V
DS
= 4.0 V, I = 0.15 A
S
D
C
95
15
pF
ISS
V
GS
= 0 V, f = 1 MHz,
Output Capacitance
C
C
OSS
RSS
V
= 15 V
DS
Reverse Transfer Capacitance
Total Gate Charge
10
Q
1.4
0.2
0.4
0.4
3.0
nC
G(TOT)
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q
G(TH)
V
= 4.5 V, V = 15 V;
DS
GS
I
= 1.5 A
D
Q
GS
GD
Q
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
2
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
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2
NTLUF4189NZ
MOSFET Electrical Characteristics (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Symbol
Test Condition
Min
Typ
Max
Units
Turn-On Delay Time
Rise Time
t
7.0
4.5
ns
d(ON)
t
r
V
GS
= 4.5 V, V = 15 V,
DD
I
= 1A, R = 6 W
D
G
Turn-Off Delay Time
Fall Time
t
10.2
1.2
d(OFF)
t
f
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.75
10.5
8.9
1.2
V
SD
J
V
= 0 V,
= 1A
GS
S
I
T = 85°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
= 0 V, dI /dt = 100 A/ms,
SD
GS
I
S
= 1 A
Discharge Time
1.6
b
Reverse Recovery Charge
Q
2.1
nC
RR
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
I = 10 mA
Min
Typ
0.27
0.36
0.52
2.0
Max
0.37
0.46
0.62
10
Units
Maximum Instantaneous Forward
Voltage
V
F
V
F
I = 100 mA
F
I = 500 mA
F
Maximum Instantaneous
Reverse Current
I
R
V
R
V
R
= 10 V
= 30 V
mA
V
20
200
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 85°C unless otherwise specified)
J
Maximum Instantaneous
Forward Voltage
V
F
I = 10 mA
F
0.2
0.3
I = 100 mA
F
I = 500 mA
0.51
80
F
Maximum Instantaneous
Reverse Current
I
V
R
V
R
= 10 V
= 30 V
mA
V
R
525
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 125°C unless otherwise specified)
J
Maximum Instantaneous
Forward Voltage
V
I = 10 mA
0.14
0.27
0.51
600
F
F
I = 100 mA
F
I = 500 mA
F
Maximum Instantaneous
Reverse Current
I
R
V
R
V
R
= 10 V
= 30 V
mA
pF
3000
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Capacitance
C
V
R
= 5 V, f = 1.0 MHz
6.0
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
2
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
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3
NTLUF4189NZ
TYPICAL MOSFET CHARACTERISTICS
10
8
5
V
GS
= 4.5 V
T = 25°C
J
V
DS
= 4 V
4
3
2
4.0 V
6
4
3.5 V
3.0 V
2.5 V
2.0 V
2
0
1
0
T = 25°C
J
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.35
0.30
0.25
0.20
0.15
0.10
0.35
0.30
0.25
0.20
2.0 V
2.5 V
3.0 V
3.5 V
4.0 V
T = 25°C
J
I
= 1.5 A
D
I
= 0.5 A
D
V
GS
= 4.5 V
0.15
0.10
T = 25°C
J
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1000
100
V
= 4.5 V
= 1.5 A
GS
V
GS
= 0 V
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
I
D
T = 150°C
J
T = 125°C
J
10
1
T = 85°C
J
0.7
0.6
−50 −25
0
25
50
75
100
125 150
0
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTLUF4189NZ
TYPICAL MOSFET CHARACTERISTICS
150
125
100
75
20
15
10
5
Q
T
V
= 0 V
GS
T = 25°C
J
4
3
2
f = 1 MHz
C
iss
V
DS
V
GS
Q
Q
GD
GS
50
5
0
V
= 15 V
= 1.5 A
C
GS
oss
1
0
25
0
I
D
T = 25°C
J
C
rss
0
5
10
15
20
25
30
0
0.25
0.5
0.75
1
1.25
1.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
100
10
1
V
V
= 4.5 V
= 15 V
= 1.0 A
GS
DD
I
D
t
t
t
d(off)
d(on)
r
1.0
0.1
T = 150°C
J
t
T = 125°C
J
T = 25°C
J
f
T = −55°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
, SOURCE−TO−DRAIN VOLTAGE (V)
V
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
175
1.4
1.3
1.2
1.1
1.0
0.9
0.8
I
D
= 250 mA
150
125
100
75
50
25
0
0.7
0.6
−50 −25
0
25
50
75
100
125 150 0.0000001 0.000010.0001 0.001 0.01 0.1
1
10 100 1000
T , TEMPERATURE (°C)
J
SINGLE PULSE TIME (s)
Figure 11. Threshold Voltage
Figure 12. Single Pulse Maximum Power
Dissipation
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NTLUF4189NZ
TYPICAL MOSFET CHARACTERISTICS
10
1
10 ms
100 ms
V
= 8 V
GS
1 ms
SINGLE PULSE
0.1
0.01
10 ms
T
C
= 25°C
R
LIMIT
DS(on)
dc
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
175
150
125
100
75
0.5
0.2
50
0.02
25
0
0.1
0.01
0.05
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 14. FET Thermal Response
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6
NTLUF4189NZ
TYPICAL SCHOTTKY CHARACTERISTICS
20
18
16
14
12
10
8
T = 25°C
A
6
4
2
0
0
5
10
15
20
25
30
V , REVERSE VOLTAGE (V)
R
Figure 15. Total Capacitance
10000
1000
100
1000
100
T = 125°C
J
T = 125°C
J
T = 85°C
J
T = 85°C
J
10
10
T = 25°C
J
T = 25°C
J
1
1
T = −55°C
J
0.1
0.1
0
100
200
300 400
500
600 700 800
0
5
10
15
20
25
20
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
V , REVERSE VOLTAGE (V)
R
Figure 16. Typical Forward Voltage
Figure 17. Typical Reverse Current
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7
NTLUF4189NZ
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517AT−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
A
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
B
2X
L
0.10
C
L1
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
DETAIL A
OPTIONAL
CONSTRUCTION
PIN ONE
REFERENCE
E
MILLIMETERS
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
2X
A
0.10
C
MOLD CMPD
EXPOSED Cu
A3
b
0.13 REF
0.20
TOP VIEW
0.30
D
E
e
1.60 BSC
1.60 BSC
0.50 BSC
A3
A
(A3)
DETAIL B
D1 1.14
D2 0.38
E1 0.54
1.34
0.58
0.74
−−−
0.35
0.10
0.05
0.05
C
C
A1
DETAIL B
K
L
L1
0.20
0.15
−−−
OPTIONAL
6X
CONSTRUCTION
SIDE VIEW
SEATING
PLANE
C
A1
D1
DETAIL A
6X K
2X
D2
E1
3
1
SOLDERMASK DEFINED
MOUNTING FOOTPRINT*
1.34
2X
0.58
6
4
6X b
6X L
0.10
0.05
C A B
e
NOTE 3
C
BOTTOM VIEW
6X
0.48
0.74 1.90
1
0.50 PITCH
6X
0.32
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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NTLUF4189NZ/D
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