NTHS5441T1G [ONSEMI]
−20 V, −5.3 A, P−Channel ChipFET; -20 V， -5.3 A， P沟道ChipFET
| 型号： | NTHS5441T1G |
| 厂家： | 
ONSEMI |
| 描述： | −20 V, −5.3 A, P−Channel ChipFET |
| 文件： | 总6页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTHS5441
Power MOSFET
−20 V, −5.3 A, P−Channel ChipFET]
Features
• Low R
DS(on)
http://onsemi.com
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
• Miniature ChipFET Surface Mount Package
• Pb−Free Package is Available
−20 V
46 mW @ −4.5 V
−5.3 A
S
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Steady
State
D
Rating
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current
Symbol
5 sec
Unit
V
P−Channel MOSFET
V
DS
V
GS
−20
"12
V
I
D
A
8
ChipFET
CASE 1206A
STYLE 1
(T = 150°C) (Note 1)
J
−5.3
−3.8
−3.9
−2.8
T = 25°C
A
T = 85°C
A
1
Pulsed Drain Current
I
"20
A
A
DM
Continuous Source Current
(Note 1)
I
S
−5.3
−3.9
PIN
CONNECTIONS
MARKING
DIAGRAM
Maximum Power Dissipation
(Note 1)
P
W
D
8
7
6
5
1
2
3
4
D
D
D
S
D
D
D
G
1
2
3
4
8
7
6
5
2.5
1.3
1.3
0.7
T = 25°C
A
T = 85°C
A
Operating Junction and Storage
Temperature Range
T , T
J
−55 to +150
°C
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
A3 = Specific Device Code
M = Month Code
G
= Pb−Free Package
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
NTHS5441T1
ChipFET
3000/Tape & Reel
ChipFET
(Pb−Free)
NTHS5441T1G
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
July, 2005 − Rev. 13
NTHS5441T1/D
NTHS5441
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Junction−to−Ambient (Note 2)
t v 5 sec
Steady State
R
°C/W
q
JA
40
80
50
95
Maximum Junction−to−Foot (Drain)
Steady State
R
15
20
°C/W
q
JF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate−Body Leakage
V
V
= V , I = −250 mA
−0.6
−1.2
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "12 V
"100
−1.0
nA
mA
GSS
DS
GS
Zero Gate Voltage Drain Current
I
V
= −16 V, V = 0 V
GS
DSS
DS
DS
V
= −16 V, V = 0 V,
−5.0
GS
T = 85°C
J
On−State Drain Current (Note 3)
I
V
DS
v −5.0 V, V = −4.5 V
−20
A
D(on)
GS
Drain−Source On−State Resistance (Note 3)
r
V
GS
V
GS
= −3.6 V, I = −3.7 A
−
−
0.050
0.046
0.06
−
W
DS(on)
D
= −4.5 V, I = −3.9 A
D
V
= −2.5 V, I = −3.1 A
0.070
12
0.083
GS
D
Forward Transconductance (Note 3)
Diode Forward Voltage (Note 3)
g
V
= −10 V, I = −3.9 A
mhos
V
fs
DS
D
V
SD
I
= −2.1 A, V = 0 V
−0.8
−1.2
22
S
GS
Dynamic (Note 4)
Total Gate Charge
Q
9.7
1.2
3.6
710
400
140
14
nC
pF
ns
G
V
= −10 V, V = −4.5 V,
GS
DS
Gate−Source Charge
Gate−Drain Charge
Input Capacitance
Q
GS
GD
I
D
= −3.9 A
Q
C
iss
V
DS
= −5.0 Vdc, V = 0 Vdc,
GS
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
C
oss
f = 1.0 MHz
C
rss
t
30
55
d(on)
V
= −10 V, R = 10 W
L
t
22
DD
r
I
D
^ −1.0 A, V
= −4.5 V,
GEN
Turn−Off Delay Time
Fall Time
t
42
100
70
R
= 6 W
d(off)
G
t
35
f
Source−Drain Reverse Recovery Time
t
rr
I = −1.1 A, di/dt = 100 A/ms
F
30
60
2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
http://onsemi.com
2
NTHS5441
TYPICAL ELECTRICAL CHARACTERISTICS
20
16
12
8
20
−5 V
−3.5 V
−3 V
T = −55°C
J
T = 25°C
J
16
−4.5 V
−4 V
25°C
125°C
−2.5 V
12
8
−2 V
4
0
4
V
GS
= −1.5 V
2.5
0
0
0.5
1
1.5
2
3
0
0.5
1
1.5
2
2.5
3
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.2
0.2
0.15
0.1
T = 25°C
J
I
= −3.9 A
D
T = 25°C
J
0.15
0.1
V
GS
= 2.5 V
V
= 3.6 V
= 4.5 V
GS
0.05
0
0.05
0
V
GS
2
6
10
14
18
20
0
1
2
3
4
5
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
−I DRAIN CURRENT (AMPS)
D,
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
Figure 3. On−Resistance versus
Gate−to−Source Voltage
1.6
I
D
= −3.9 A
V
GS
= −4.5 V
1.4
1.2
1
0.8
0.6
−50 −25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Temperature
http://onsemi.com
3
NTHS5441
TYPICAL ELECTRICAL CHARACTERISTICS
5
11
10
9
1500
1200
900
Q
G
T = 25°C
J
4
V
GS
= 0
8
7
3
2
1
0
6
C
C
iss
Q
GS
5
Q
GD
600
4
oss
3
I
= −3.9 A
D
T = 25°C
Q
J
300
0
2
C
/Q = 3.0
GD GS
rss
1
0
0
1
2
3
4
5
6
7
8
9
10
0
4
8
12
16
20
−V , DRAIN−TO−SOURCE VOLTAGE ()
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 6. Capacitance Variation
Figure 7. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1
Duty Cycle = 0.5
0.2
0.1
P
DM
0.1
0.05
0.02
PER UNIT BASE = R = 80°C/W
q
JA
T
− T = P Z
q
DM JA
(t)
JM
A
t
1
SURFACE MOUNTED
t
2
DUTY CYCLE, D = t /t
1 2
Single Pulse
0.001
0.01
0.0001
0.01
0.1
1
10
100
1000
SQUARE WAVE PULSE DURATION (sec)
Figure 8. Normalized Thermal Transient Impedance, Junction−to−Ambient
5
4
3
2
V
= 0 V
GS
T = 25°C
J
1
0
0.1
0.3
0.5
0.7
0.9
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 9. Diode Forward Voltage versus
Current
http://onsemi.com
4
NTHS5441
PACKAGE DIMENSIONS
ChipFET]
CASE 1206A−03
ISSUE G
NOTES:
D
q
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
L
8
1
7
2
6
3
5
4
5
4
6
3
7
2
8
1
H
E
E
MILLIMETERS
INCHES
NOM
0.041
0.012
0.006
DIM
A
b
c
D
MIN
1.00
0.25
0.10
2.95
1.55
NOM
1.05
MAX
MIN
MAX
0.043
0.014
0.008
0.122
0.067
e1
b
1.10
0.35
0.20
3.10
1.70
0.039
0.010
0.004
0.116
0.061
c
0.30
e
0.15
3.05
0.120
0.065
E
1.65
e
e1
L
0.65 BSC
0.55 BSC
0.35
1.90
5° NOM
0.025 BSC
0.022 BSC
0.014
0.075
5° NOM
0.28
1.80
0.42
2.00
0.011
0.071
0.017
0.079
A
H
E
q
0.05 (0.002)
SOLDERING FOOTPRINT*
2.032
0.08
2.032
0.08
0.457
0.018
0.635
0.025
1.727
0.068
0.457
0.018
0.178
0.007
0.711
0.028
0.711
0.028
mm
inches
mm
inches
0.66
0.026
0.66
0.026
ǒ
Ǔ
ǒ
Ǔ
SCALE 20:1
SCALE 20:1
Basic
Styles 1 and 4
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
NTHS5441
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
NTHS5441T1/D
相关型号：
NTHS5443T1G
3600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET-8
ROCHESTER
NTI02B2N9TRF
General Purpose Inductor, 0.0029uH, 3.449%, 1 Element, SMD, 0201M, CHIP, 0201M, ROHS COMPLIANT
NICHICON
NTI02B3N5TRF
General Purpose Inductor, 0.0035uH, 2.858%, 1 Element, SMD, 0201M, CHIP, 0201M, ROHS COMPLIANT
NICHICON
NTI02B3N7TRF
General Purpose Inductor, 0.0037uH, 2.703%, 1 Element, SMD, 0201M, CHIP, 0201M, ROHS COMPLIANT
NICHICON
©2020 ICPDF网 联系我们和版权申明