NTHS5445T1/D [ETC]

Power MOSFET P-Channel ChipFET? ; 功率MOSFET P通道ChipFET ？\n


型号：	NTHS5445T1/D
厂家：	ETC
描述：	Power MOSFET P-Channel ChipFET? 功率MOSFET P通道ChipFET ？\n
文件：	总8页 (文件大小：54K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NTHS5445T1

Power MOSFET

P-Channel ChipFETE

5.2 Amps, 8 Volts

Features

http://onsemi.com

• Low R

for Higher Efficiency

DS(on)

• Logic Level Gate Drive

• Miniature ChipFET Surface Mount Package Saves Board Space

5.2 AMPS

8 VOLTS

Applications

• Power Management in Portable and Battery–Powered Products; i.e.,

Cellular and Cordless Telephones and PCMCIA Cards

R_DS(on)= 35 mW

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Steady

State

Rating

Symbol

5 secs

–8.0

"8.0

Unit

Drain–Source Voltage

Gate–Source Voltage

Continuous Drain Current

P–Channel MOSFET

(T = 150°C) (Note 1.)

T = 25°C

T = 85°C

"7.1

"5.2

"3.7

Pulsed Drain Current

"20

Continuous Source Current

(Note 1.)

–2.1

–1.1

Maximum Power Dissipation

(Note 1.)

ChipFET

CASE 1206A

STYLE 1

T = 25°C

2.5

1.3

0.7

T = 85°C

Operating Junction and Storage

Temperature Range

T , T

–55 to +150

°C

stg

MARKING

DIAGRAM

1. Surface Mounted on 1″ x 1″ FR4 Board.

PIN CONNECTIONS

A5 = Specific Device Code

ORDERING INFORMATION

Device

Package

Shipping

3000/Tape & Reel

NTHS5445T1

ChipFET

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

May, 2001 – Rev. 2

NTHS5445T1/D

NTHS5445T1

THERMAL CHARACTERISTICS

Characteristic

Symbol

Typ

Max

Unit

Maximum Junction–to–Ambient (Note 2.)

°C/W

thJA

t v 5 sec

Steady State

Maximum Junction–to–Foot (Drain)

Steady State

°C/W

thJF

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

= V , I = –250 µA

–0.45

–

GS(th)

Gate–Body Leakage

= 0 V, V = "8.0 V

–

"100

–1.0

–5.0

µA

GSS

Zero Gate Voltage Drain Current

= –6.4 V, V = 0 V

DSS

= –6.4 V, V = 0 V,

T = 85°C

On–State Drain Current (Note 3.)

v –5.0 V, V = –4.5 V

–20

–

D(on)

Drain–Source On–State Resistance (Note 3.)

= –4.5 V, I = –5.2 A

0.030

0.040

0.052

0.035

0.047

0.062

–

Ω

DS(on)

= –2.5 V, I = –4.5 A

–

= –1.8 V, I = –2.0 A

–

Forward Transconductance (Note 3.)

Diode Forward Voltage (Note 3.)

= –5.0 V, I = –5.2 A

–

= –1.1 A, V = 0 V

–

–0.8

–1.2

Dynamic (Note 4.)

Total Gate Charge

–

2.8

2.6

–

= –4.0 V, V = –4.5 V,

Gate–Source Charge

Gate–Drain Charge

Turn–On Delay Time

Rise Time

= –5.2 A

–

165

100

d(on)

= –4.0 V, R = 4 Ω

^ –1.0 A, V

= –4.5 V,

GEN

Turn–Off Delay Time

Fall Time

110

d(off)

= 6 Ω

Source–Drain Reverse Recovery Time

I = –1.1 A, di/dt = 100 A/µs

2. Surface Mounted on 1″ x 1″ FR4 Board.

3. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.

4. Guaranteed by design, not subject to production testing.

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NTHS5445T1

TYPICAL ELECTRICAL CHARACTERISTICS

= 5 thru 2.5 V

= –55°C

2 V

25°C

125°C

1.5 V

1 V

0.5

1.0

1.5

2.0

2.5

0.5

1.0

1.5

2.0

2.5

3.0

, Drain–to–Source Voltage (V)

, Gate–to–Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

0.10

0.08

0.06

0.04

0.02

3000

2500

2000

1500

1000

500

= 1.8 V

iss

= 2.5 V

= 4.5 V

oss

rss

, Drain–to–Source Voltage (V)

I , Drain Current (A)

Figure 3. On–Resistance vs. Drain Current

Figure 4. Capacitance

1.6

1.4

1.2

1.0

0.8

0.6

= 4 V

= 5.2 A

= 4.5 V

= 5.2 A

–50

–25

100

125 150

Total Gate Charge (nC)

T , Junction Temperature (°C)

Figure 5. Gate Charge

Figure 6. On–Resistance vs. Junction

Temperature

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NTHS5445T1

TYPICAL ELECTRICAL CHARACTERISTICS

0.10

T = 150°C

0.08

0.06

0.04

0.02

= 5.2 A

T = 25°C

0.2

0.4

0.6

0.8

1.0

1.2

, Gate–to–Source Voltage (V)

, Drain–to–Source Voltage (V)

Figure 7. Source–Drain Diode Forward Voltage

Figure 8. On–Resistance vs. Gate–to–Source

Voltage

0.4

0.3

= 250 µA

0.2

0.1

0.0

–0.1

–0.2

–3

–2

–1

–50

–25

100

125

150

100

600

T , Temperature (°C)

Time (sec)

Figure 9. Threshold Voltage

Figure 10. Single Pulse Power

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NTHS5445T1

TYPICAL ELECTRICAL CHARACTERISTICS

Duty Cycle = 0.5

Notes:

0.2

0.1

0.05

1. Duty Cycle, D =

2. Per Unit Base = R

= 80°C/W

0.02

thJA

(t)

3. T

T = P

JM –

DM thJA

Single Pulse

4. Surface Mounted

0.01

–4

–3

–2

–1

100

600

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

–4

–3

–2

–1

Square Wave Pulse Duration (sec)

Figure 12. Normalized Thermal Transient Impedance, Junction–to–Foot

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NTHS5445T1

PACKAGE DIMENSIONS

CHIPFET

CASE 1206A–01

ISSUE A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM

PER SIDE.

4. LEADFRAME TO MOLDED BODY OFFSET IN

HORIZONTAL AND VERTICAL SHALL NOT EXCEED

0.08 MM.

5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE

BURRS.

6. NO MOLD FLASH ALLOWED ON THE TOP AND

BOTTOM LEAD SURFACE.

MILLIMETERS

INCHES

DIM MIN

MAX

MIN

0.116

MAX

0.122

0.067

0.043

0.014

2.95

1.55

1.00

0.25

3.10

1.70 0.061

1.10 0.039

0.35 0.010

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. DRAIN

4. GATE

5. SOURCE

6. DRAIN

7. DRAIN

8. DRAIN

0.65 BSC

0.025 BSC

0.10

0.30

0.15 0.004

0.45 0.012

0.008

0.018

0.022 BSC

0.55 BSC

5 ° NOM

--- 1.80

5 ° NOM

0.05 (0.002)

---

0.071

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NTHS5445T1

80 mm

18 mm

25 mm

68 mm

28 mm

26 mm

Figure 13.

Figure 14.

BASIC PAD PATTERNS

The basic pad layout with dimensions is shown in

Figure 13. This is sufficient for low power dissipation

MOSFET applications, but power semiconductor

performance requires a greater copper pad area,

particularly for the drain leads.

The minimum recommended pad pattern shown in

Figure 14 improves the thermal area of the drain

connections (pins 1, 2, 3, 6, 7, 8) while remaining within the

confines of the basic footprint. The drain copper area is

0.0054 sq. in. (or 3.51 sq. mm). This will assist the power

dissipation path away from the device (through the copper

leadframe) and into the board and exterior chassis (if

applicable) for the single device. The addition of a further

copper area and/or the addition of vias to other board layers

will enhance the performance still further.

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NTHS5445T1

ChipFET is a trademark of Vishay Siliconix

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment:

CENTRAL/SOUTH AMERICA:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)

Email: ONlit–spanish@hibbertco.com

Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada

Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada

Email: ONlit@hibbertco.com

Toll–Free from Mexico: Dial 01–800–288–2872 for Access –

then Dial 866–297–9322

ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support

Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)

Toll Free from Hong Kong & Singapore:

Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada

N. American Technical Support: 800–282–9855 Toll Free USA/Canada

001–800–4422–3781

EUROPE: LDC for ON Semiconductor – European Support

German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)

Email: ONlit–german@hibbertco.com

French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)

Email: ONlit–french@hibbertco.com

Email: ONlit–asia@hibbertco.com

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)

Email: ONlit@hibbertco.com

ON Semiconductor Website: http://onsemi.com

EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781

For additional information, please contact your local

Sales Representative.

*Available from Germany, France, Italy, UK, Ireland

NTHS5445T1/D

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NTHS5445T1/D [ETC]

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