NTD32N06 [ONSEMI]
32 Amps, 60 Volts, N−Channel DPAK; 32安培， 60伏， N沟道DPAK
| 型号： | NTD32N06 |
| 厂家： | 
ONSEMI |
| 描述： | 32 Amps, 60 Volts, N−Channel DPAK |
| 文件： | 总8页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD32N06
Power MOSFET
32 Amps, 60 Volts, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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Features
• Pb−Free Packages are Available
• Smaller Package than MTB36N06V
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
60 V
26 mW
32 A
• Lower R
DS(on)
• Lower V
• Lower Total Gate Charge
• Lower and Tighter V
DS(on)
N−Channel
D
SD
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
Typical Applications
G
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
S
MARKING
DIAGRAMS
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
60
Unit
Vdc
Vdc
Vdc
4
Drain
Drain−to−Source Voltage
V
DSS
DGR
Drain−to−Gate Voltage (R = 10 MW)
V
60
GS
4
DPAK
CASE 369C
STYLE 2
Gate−to−Source Voltage, Continuous
V
V
"20
"30
GS
GS
− Non−Repetitive (t v10 ms)
p
2
1
Drain Current
− Continuous @ T = 25°C
3
I
D
32
22
90
Adc
Apk
A
2
− Continuous @ T = 100°C
I
D
A
1
Gate
3
Drain
− Single Pulse (t v10 ms)
I
DM
p
Source
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
93.75
0.625
2.88
1.5
W
W/°C
W
A
4
Total Power Dissipation @ T = 25°C (Note 1)
Drain
A
Total Power Dissipation @ T = 25°C (Note 2)
W
A
4
DPAK−3
CASE 369D
STYLE 2
Operating and Storage Temperature Range
T , T
−55 to
+175
°C
J
stg
Single Pulse Drain−to−Source Avalanche
E
AS
313
mJ
Energy − Starting T = 25°C (Note 3)
J
1
(V = 50 Vdc, V = 10 Vdc, L = 1.0 mH,
DD
GS
2
3
I
= 25 A, V = 60 Vdc, R = 25 W)
DS G
L(pk)
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
R
R
1.6
52
100
°C/W
°C
1
2
3
q
JC
JA
JA
Gate Drain Source
q
q
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
32N06
A
Y
= Device Code
= Assembly Location
= Year
L
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1. When surface mounted to an FR4 board using 1″ pad size,
2
(Cu Area 1.127 in ).
2. When surface mounted to an FR4 board using minimum recommended pad
2
size, (Cu Area 0.412 in ).
3. Repetitive rating; pulse width limited by maximum junction temperature.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
August, 2004 − Rev. 3
NTD32N06/D
NTD32N06
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
V
Vdc
(BR)DSS
(V = 0 Vdc, I = 250 mAdc)
Temperature Coefficient (Positive)
60
−
70
41.6
−
−
GS
D
mV/°C
mAdc
Zero Gate Voltage Drain Current
I
DSS
(V = 60 Vdc, V = 0 Vdc)
−
−
−
−
1.0
10
DS
GS
(V = 60 Vdc, V = 0 Vdc, T = 150°C)
DS
GS
J
Gate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc)
I
−
−
±100
nAdc
Vdc
GS
DS
GSS
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
(V = V , I = 250 mAdc)
V
GS(th)
2.0
−
2.8
7.0
4.0
−
DS
GS
D
Threshold Temperature Coefficient (Negative)
mV/°C
mW
Static Drain−to−Source On−Resistance (Note 4)
R
V
DS(on)
(V = 10 Vdc, I = 16 Adc)
−
21
26
GS
D
Static Drain−to−Source On−Voltage (Note 4)
(V = 10 Vdc, I = 20 Adc)
Vdc
DS(on)
−
−
−
0.417
0.680
0.633
0.62
−
−
GS
D
(V = 10 Vdc, I = 32 Adc)
GS
D
(V = 10 Vdc, I = 16 Adc, T = 150°C)
GS
D
J
Forward Transconductance (Note 4) (V = 6 Vdc, I = 16 Adc)
g
FS
−
21.1
−
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
1231
346
77
1725
485
iss
(V = 25 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
Transfer Capacitance
C
oss
f = 1.0 MHz)
C
160
rss
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
−
−
−
−
−
−
−
10
84
31
93
33
6.0
15
25
180
70
200
60
−
ns
d(on)
(V = 30 Vdc, I = 32 Adc,
DD
D
Rise Time
t
r
V
GS
= 10 Vdc,
Turn−Off Delay Time
Fall Time
t
d(off)
R
= 9.1 W) (Note 4)
G
t
f
Gate Charge
Q
T
Q
1
Q
2
nC
(V = 48 Vdc, I = 32 Adc,
DS
D
V
GS
= 10 Vdc) (Note 4)
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = 20 Adc, V = 0 Vdc) (Note 4)
V
SD
−
−
−
0.89
0.96
0.75
1.0
−
−
Vdc
ns
S
GS
(I = 32 Adc, V = 0 Vdc) (Note 4)
S
GS
(I = 20 Adc, V = 0 Vdc, T = 150°C)
S
GS
J
Reverse Recovery Time
t
rr
−
−
−
−
52
37
−
−
−
−
(I = 32 Adc, V = 0 Vdc,
S
GS
t
a
dI /dt = 100 A/ms) (Note 4)
S
t
b
14.3
0.095
Reverse Recovery Stored Charge
Q
mC
RR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTD32N06
60
50
40
30
20
10
0
60
V
GS
= 10 V
V
> = 10 V
DS
V
= 6 V
GS
50
40
30
20
10
0
V
V
= 6.5 V
= 7 V
GS
V
GS
= 5.5 V
GS
V
GS
= 8 V
V
GS
= 5 V
T = 25°C
J
V
GS
= 4.5 V
= 4 V
T = 100°C
J
V
GS
T = −55°C
J
0
1
2
3
4
3
3.4 3.8 4.2 4.6
5
5.4 5.8 6.2 6.6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.024
0.038
0.034
0.03
V
GS
= 10 V
0.023
0.022
0.021
0.02
T = 100°C
J
V
V
= 10 V
= 15 V
GS
0.026
0.022
0.018
T = 25°C
J
GS
T = −55°C
J
0.019
0.018
0.014
0.01
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1000
100
1.8
1.6
I
V
= 16 A
V
GS
= 0 V
D
= 10 V
GS
T = 150°C
J
1.4
1.2
1
T = 125°C
J
T = 100°C
J
0.8
10
0.6
−50 −25
0
25
50
75 100 125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTD32N06
12
3200
2800
2400
2000
1600
1200
800
V
= 0 V
V
GS
= 0 V
T = 25°C
J
DS
Q
T
10
8
V
GS
C
C
iss
rss
Q
1
Q
2
C
6
iss
4
C
C
oss
2
I
D
= 32 A
400
rss
T = 25°C
J
0
0
0
10
V
GS
V
DS
5
0
5
10
15
20
25
4
8
12
16
20
24
28
32
36
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
32
V
I
= 30 V
= 32 A
= 10 V
DS
V
GS
= 0 V
28
24
20
16
D
T = 25°C
J
V
GS
100
t
t
r
12
8
f
t
d(off)
4
t
d(on)
10
0
1
10
R , GATE RESISTANCE (W)
100
0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92 0.96
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
350
V
GS
= 20 V
R
Limit
DS(on)
I
D
= 32 A
SINGLE PULSE
= 25°C
Thermal Limit
Package Limit
300
250
200
150
100
50
T
C
100
10
1
dc
10 ms
1 ms
100 ms
Mounted on 3″ sq. FR4 board (1″ sq.
2 oz. Cu 0.06″ thick single sided)
with one die operating,10 s max
0.1
0
0.1
1
10
100
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTD32N06
10
Normalized to R
at Steady State
q
JC
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
10
Normalized to R
1″ square Cu Pad, Cu Area 1.127 in ,
at Steady State,
q
JA
2
3 x 3 inch FR4 board
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1
10
100
1000
Figure 14. Thermal Response
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5
NTD32N06
ORDERING INFORMATION
Device
†
Package
Shipping
NTD32N06
DPAK
75 Units/Rail
75 Units/Rail
NTD32N06G
DPAK
(Pb−Free)
NTD32N06−1
DPAK−3
75 Units/Rail
75 Units/Rail
NTD32N06−1G
DPAK−3
(Pb−Free)
NTD32N06T4
DPAK
2500 Tape & Reel
2500 Tape & Reel
NTD32N06T4G
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD32N06
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
SEATING
PLANE
−T−
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
STYLE 2:
PIN 1. GATE
2. DRAIN
G
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
NTD32N06
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
NOTES:
C
B
R
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
4
2
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
G
M
T
0.13 (0.005)
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTD32N06/D
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