NTD32N06L/D [ETC]
Power MOSFET 32 Amps， 60 Volts， Logic Level ; 功率MOSFET 32安培， 60伏特，逻辑电平\n
| 型号： | NTD32N06L/D |
| 厂家： | 
ETC |
| 描述： | Power MOSFET 32 Amps， 60 Volts， Logic Level
|
| 文件： | 总8页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD32N06L
Power MOSFET
32 Amps, 60 Volts, Logic Level
N–Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
Features
32 AMPERES
60 VOLTS
• Smaller Package than MTB30N06VL
• Lower R
• Lower V
• Lower Total Gate Charge
• Lower and Tighter V
DS(on)
DS(on)
R
= 28 mΩ
DS(on)
SD
N–Channel
• Lower Diode Reverse Recovery Time
D
• Lower Reverse Recovery Stored Charge
Typical Applications
• Power Supplies
• Converters
G
• Power Motor Controls
• Bridge Circuits
S
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol Value Unit
Drain–to–Source Voltage
V
60
60
Vdc
Vdc
Vdc
4
DSS
DGR
YWW
NTD
32N06L
CASE 369A
DPAK
STYLE 2
Drain–to–Gate Voltage (R
= 10 MΩ)
V
GS
2
3
Gate–to–Source Voltage
– Continuous
1
V
V
"15
"20
GS
GS
– Non–Repetitive (t v10 ms)
p
Drain Current
NTD32N06L = Device Code
– Continuous @ T = 25°C
I
I
32
22
90
Adc
Y
WW
T
= Year
= Work Week
= MOSFET
A
D
D
– Continuous @ T = 100°C
A
– Single Pulse (t v10 µs)
I
Apk
W
p
DM
P
Total Power Dissipation @ T = 25°C
93.75
0.625 W/°C
2.88
1.5
A
D
Derate above 25°C
PIN ASSIGNMENT
Total Power Dissipation @ T = 25°C (Note 1.)
W
W
A
4
Total Power Dissipation @ T = 25°C (Note 2.)
A
Drain
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche
T , T
stg
–55 to
+175
°C
J
E
AS
313
mJ
Energy – Starting T = 25°C (Note 3.)
J
(V
I
= 50 Vdc, V
= 25 A, V
DS
= 5 Vdc, L = 1.0 mH,
DD
L(pk)
GS
= 60 Vdc, R = 25 Ω)
1
Gate
3
G
2
Source
Drain
Thermal Resistance
– Junction–to–Case
°C/W
°C
R
θJC
R
θJA
R
θJA
1.6
52
100
– Junction–to–Ambient (Note 1.)
– Junction–to–Ambient (Note 2.)
ORDERING INFORMATION
Device
Package
DPAK
Shipping
75 Units/Rail
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
L
NTD32N06L
1. When surface mounted to an FR4 board using 1″ pad size,
NTD32N06L–1
NTD32N06LT4
DPAK
75 Units/Rail
2
(Cu Area 1.127 in ).
2. When surface mounted to an FR4 board using minimum recommended pad
DPAK
2500 Tape & Reel
2
size, (Cu Area 0.412 in ).
3. Repetitive rating; pulse width limited by maximum junction temperature.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2001 – Rev. 0
NTD32N06L/D
NTD32N06L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 4.)
V
Vdc
(BR)DSS
(V
= 0 Vdc, I = 250 µAdc)
60
–
70
62
–
–
GS
D
Temperature Coefficient (Positive)
mV/°C
µAdc
Zero Gate Voltage Drain Current
I
DSS
(V
DS
(V
DS
= 60 Vdc, V
= 60 Vdc, V
= 0 Vdc)
= 0 Vdc, T = 150°C)
–
–
–
–
1.0
10
GS
GS
J
Gate–Body Leakage Current (V
= ±15 Vdc, V
DS
= 0 Vdc)
I
–
–
±100
nAdc
Vdc
GS
GSS
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage (Note 4.)
V
GS(th)
(V
= V , I = 250 µAdc)
1.0
–
1.7
4.8
2.0
–
DS
GS
D
Threshold Temperature Coefficient (Negative)
mV/°C
Static Drain–to–Source On–Resistance (Note 4.)
R
V
mOhm
DS(on)
(V = 5 Vdc, I = 16 Adc)
–
23.7
28
GS
D
Static Drain–to–Source On–Resistance (Note 4.)
Vdc
DS(on)
(V
GS
(V
GS
(V
GS
= 5 Vdc, I = 20 Adc)
–
–
–
0.48
0.78
0.61
0.67
–
–
D
= 5 Vdc, I = 32 Adc)
D
= 5 Vdc, I = 16 Adc, T = 150°C)
D
J
Forward Transconductance (Note 4.) (V
= 6 Vdc, I = 16 Adc)
g
FS
–
27
–
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
–
–
–
1214
343
87
1700
480
iss
(V
DS
= 25 Vdc, V
= 0 Vdc,
GS
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
C
oss
C
180
rss
SWITCHING CHARACTERISTICS (Note 5.)
Turn–On Delay Time
t
–
–
–
–
–
–
–
12.8
221
37
30
450
80
260
50
–
ns
d(on)
(V
= 30 Vdc, I = 32 Adc,
D
Rise Time
DD
t
r
V
= 5 Vdc,
GS
= 9.1 Ω) (Note 4.)
Turn–Off Delay Time
Fall Time
t
d(off)
R
G
t
f
128
23
Gate Charge
Q
T
Q
1
Q
2
nC
(V
= 48 Vdc, I = 32 Adc,
DS
V
D
4.5
14
= 5 Vdc) (Note 4.)
GS
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(I = 20 Adc, V
= 0 Vdc) (Note 4.)
= 0 Vdc) (Note 4.)
V
SD
–
–
–
0.89
0.95
0.74
1.0
–
–
Vdc
ns
S
GS
GS
(I = 32 Adc, V
S
(I = 20 Adc, V
S
= 0 Vdc, T = 150°C)
GS
J
Reverse Recovery Time
t
rr
–
–
–
–
56
31
–
–
–
–
(I = 32 Adc, V
= 0 Vdc,
S
GS
t
a
dI /dt = 100 A/µs) (Note 4.)
S
t
b
25
Reverse Recovery Stored Charge
Q
0.093
µC
RR
4. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTD32N06L
60
50
40
30
20
10
0
60
V
GS
= 10 V
V
> = 10 V
DS
V
= 4.5 V
GS
50
40
30
20
10
0
V
V
= 5 V
GS
V
= 4 V
GS
= 6 V
= 8 V
GS
V
GS
= 3.5 V
= 3 V
V
GS
T = 25°C
J
V
GS
T = 100°C
J
T = –55°C
J
0
1
2
3
4
1.8
2.2
2.6
3
3.4
3.8
4.2
4.6
5
V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
V , GATE–TO–SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0.042
0.042
0.038
0.034
0.03
V
GS
= 5 V
V
GS
= 10 V
0.038
0.034
0.03
T = 100°C
J
T = 25°C
J
T = 100°C
0.026
0.022
0.018
J
0.026
0.022
0.018
0.014
0.01
T = 25°C
J
T = –55°C
J
T = –55°C
J
0.014
0.01
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On–Resistance vs. Gate–to–Source
Voltage
Figure 4. On–Resistance vs. Drain Current and
Gate Voltage
10000
1000
100
1.8
1.6
V
GS
= 0 V
I
V
= 16 A
= 5 V
D
GS
T = 150°C
J
1.4
1.2
1
T = 125°C
J
T = 100°C
J
0.8
10
0.6
–50 –25
0
25
50
75 100 125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
vs. Voltage
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3
NTD32N06L
6
4000
3600
3200
2800
2400
2000
1600
1200
800
V
= 0 V
V
= 0 V
T = 25°C
DS
GS
J
Q
T
5
4
3
2
1
0
V
GS
C
C
iss
rss
Q
Q
2
1
C
iss
C
C
oss
I
= 32 A
D
J
400
T = 25°C
rss
0
10
V
GS
V
DS
5
0
5
10
15
20
25
0
4
8
12
16
20
24
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate–to–Source and
Drain–to–Source Voltage vs. Total Charge
1000
32
V
I
= 30 V
= 32 A
= 5 V
DS
D
V
= 0 V
GS
T = 25°C
28
24
20
16
J
V
GS
t
t
r
f
100
12
8
t
d(off)
4
t
d(on)
10
0
1
10
, GATE RESISTANCE (Ω)
100
0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92 0.96
R
V
SD
, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
350
V
= 20 V
R
Limit
GS
SINGLE PULSE
= 25°C
DS(on)
I
D
= 32 A
Thermal Limit
Package Limit
300
250
200
150
100
50
T
C
100
10
1
dc
10 ms
1 ms
100 µs
Mounted on 3″ sq. FR4 board (1″ sq.
2 oz. Cu 0.06″ thick single sided)
with one die operating,10 s max
0.1
0
0.1
1
10
100
25
50
75
100
125
150
175
V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTD32N06L
10
Normalized to R
θJC
at Steady State
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
10
Normalized to R
1″ square Cu Pad, Cu Area 1.127 in ,
at Steady State,
θJA
2
3 x 3 inch FR4 board
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1
10
100
1000
Figure 14. Thermal Response
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5
NTD32N06L
PACKAGE DIMENSIONS
DPAK
CASE 369A–13
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
–T–
PLANE
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.84
0.94
MAX
6.35
6.73
2.38
0.88
1.01
1.19
A
B
C
D
E
F
0.235
0.250
0.086
0.027
0.033
0.037
0.250
0.265
0.094
0.035
0.040
0.047
4
2
Z
A
K
S
1
3
G
H
J
0.180 BSC
4.58 BSC
U
0.034
0.018
0.102
0.040
0.023
0.114
0.87
0.46
2.60
1.01
0.58
2.89
K
L
0.090 BSC
2.29 BSC
F
J
R
S
U
V
Z
0.175
0.020
0.020
0.030
0.138
0.215
0.050
---
4.45
0.51
0.51
0.77
3.51
5.46
1.27
---
L
H
0.050
---
1.27
---
D 2 PL
M
G
0.13 (0.005)
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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6
NTD32N06L
Notes
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7
NTD32N06L
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NTD32N06L/D
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