NTD32N06LT4 [ONSEMI]
Power MOSFET 32 Amps, 60 Volts, Logic Level(N−Channel DPAK); 功率MOSFET 32安培， 60伏特，逻辑电平（ N沟道DPAK ）
| 型号： | NTD32N06LT4 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 32 Amps, 60 Volts, Logic Level(N−Channel DPAK) |
| 文件： | 总8页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD32N06L
Power MOSFET
32 Amps, 60 Volts, Logic Level
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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Features
V
R
TYP
I MAX
D
DSS
DS(ON)
• Smaller Package than MTB30N06VL
• Lower R
60 V
23.7 mW
32 A
, V
, and Total Gate Charge
DS(on)
DS(on)
• Lower and Tighter V
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
SD
N−Channel
D
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
G
4
S
MARKING DIAGRAMS
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
4
Rating
Symbol Value Unit
Drain
2
3
1
Drain−to−Source Voltage
V
V
60
60
Vdc
Vdc
Vdc
DSS
Drain−to−Gate Voltage (R = 10 MW)
DPAK
GS
DGR
CASE 369C
(Surface Mount)
Style 2
Gate−to−Source Voltage
− Continuous
V
V
"20
"30
GS
GS
− Non−Repetitive (t v10 ms)
p
2
Drain Current
− Continuous @ T = 25°C
1
Gate
3
4
Drain
I
I
32
22
90
Adc
D
D
Source
A
− Continuous @ T = 100°C
A
4
I
Apk
W
DM
− Single Pulse (t v10 ms)
p
Drain
Total Power Dissipation @ T = 25°C
P
93.75
A
D
0.625 W/°C
1
2
3
Derate above 25°C
Total Power Dissipation @ T = 25°C (Note 1)
Total Power Dissipation @ T = 25°C (Note 2)
2.88
1.5
W
W
A
A
DPAK
CASE 369D
(Straight Lead)
Style 2
Operating and Storage Temperature Range
T , T
−55 to
+175
°C
J
stg
Single Pulse Drain−to−Source Avalanche
E
AS
313
mJ
Energy − Starting T = 25°C (Note 3)
J
1
2
3
32N06L
Y
WW
Device Code
= Year
= Work Week
(V = 50 Vdc, V = 5 Vdc, L = 1.0 mH,
DD
GS
Gate Drain Source
I
= 25 A, V = 60 Vdc, R = 25 W)
DS G
L(pk)
Thermal Resistance
− Junction−to−Case
°C/W
°C
R
R
R
1.6
52
100
q
JC
JA
JA
ORDERING INFORMATION
q
q
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
†
Device
Package
Shipping
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
L
NTD32N06L
DPAK
75 Units/Rail
DPAK
Straight Lead
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
NTD32N06L−1
75 Units/Rail
NTD32N06LT4
DPAK
2500/Tape & Reel
1. When surface mounted to FR4 board using 0.5″ pad size.
2. When surface mounted to FR4 board using minimum recommended pad
size.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3. Repetitive rating; pulse width limited by maximum junction temperature.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
April, 2004 − Rev. 3
NTD32N06L/D
NTD32N06L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
V
Vdc
mV/°C
mAdc
(BR)DSS
(V = 0 Vdc, I = 250 mAdc)
60
−
70
62
−
−
GS
D
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
I
DSS
(V = 60 Vdc, V = 0 Vdc)
−
−
−
−
1.0
10
DS
GS
(V = 60 Vdc, V = 0 Vdc, T = 150°C)
DS
GS
J
Gate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc)
I
−
−
±100
nAdc
GS
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
DS
GSS
V
GS(th)
Vdc
mV/°C
mW
(V = V , I = 250 mAdc)
1.0
−
1.7
4.8
2.0
−
DS
GS
D
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 4)
R
V
DS(on)
(V = 5 Vdc, I = 16 Adc)
−
23.7
28
GS
D
Static Drain−to−Source On−Resistance (Note 4)
(V = 5 Vdc, I = 20 Adc)
Vdc
DS(on)
−
−
−
0.48
0.78
0.61
0.67
−
−
GS
D
(V = 5 Vdc, I = 32 Adc)
GS
D
(V = 5 Vdc, I = 16 Adc, T = 150°C)
GS
D
J
Forward Transconductance (Note 4) (V = 6 Vdc, I = 16 Adc)
g
FS
−
27
−
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
1214
343
87
1700
480
iss
(V = 25 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
Transfer Capacitance
C
oss
f = 1.0 MHz)
C
180
rss
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
−
−
−
−
−
−
−
12.8
221
37
30
450
80
260
50
−
ns
d(on)
(V = 30 Vdc, I = 32 Adc,
Rise Time
t
r
DD
D
V
= 5 Vdc,
GS
Turn−Off Delay Time
Fall Time
t
d(off)
R
= 9.1 W) (Note 4)
G
t
f
128
23
Gate Charge
Q
T
Q
1
Q
2
nC
(V = 48 Vdc, I = 32 Adc,
DS
D
4.5
14
V
GS
= 5 Vdc) (Note 4)
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = 20 Adc, V = 0 Vdc) (Note 4)
V
SD
−
−
−
0.89
0.95
0.74
1.0
−
−
Vdc
ns
S
GS
(I = 32 Adc, V = 0 Vdc) (Note 4)
S
GS
(I = 20 Adc, V = 0 Vdc, T = 150°C)
S
GS
J
Reverse Recovery Time
t
rr
−
−
−
−
56
31
−
−
−
−
(I = 32 Adc, V = 0 Vdc,
S
GS
t
a
dI /dt = 100 A/ms) (Note 4)
S
t
b
25
Reverse Recovery Stored Charge
Q
0.093
mC
RR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTD32N06L
60
50
40
30
20
10
0
60
V
= 10 V
V
> = 10 V
GS
DS
V
= 4.5 V
GS
50
40
30
20
10
0
V
V
= 5 V
GS
V
= 4 V
GS
= 6 V
= 8 V
GS
V
GS
= 3.5 V
= 3 V
V
GS
T = 25°C
J
V
GS
T = 100°C
J
T = −55°C
J
0
1
2
3
4
1.8
2.2
2.6
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
3
3.4
3.8
4.2
4.6
5
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.042
0.042
0.038
0.034
0.03
V
GS
= 5 V
V
GS
= 10 V
0.038
0.034
0.03
T = 100°C
J
T = 25°C
J
T = 100°C
J
0.026
0.022
0.018
0.026
0.022
0.018
0.014
0.01
T = 25°C
J
T = −55°C
J
T = −55°C
J
0.014
0.01
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance vs. Drain Current
Figure 4. On−Resistance vs. Drain Current
10000
1000
100
1.8
1.6
V
GS
= 0 V
I
V
= 16 A
= 5 V
D
T = 150°C
J
GS
1.4
1.2
1
T = 125°C
J
T = 100°C
J
0.8
10
0.6
−50 −25
0
25
50
75 100 125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTD32N06L
6
4000
3600
3200
2800
2400
2000
1600
1200
800
V
= 0 V
V
= 0 V
T = 25°C
DS
GS
J
Q
T
5
4
3
2
1
0
V
GS
C
C
iss
rss
Q
Q
2
1
C
iss
C
C
oss
I
D
= 32 A
400
T = 25°C
J
rss
0
10
V
GS
V
DS
5
0
5
10
15
20
25
0
4
8
12
16
20
24
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
32
V
I
= 30 V
= 32 A
= 5 V
DS
V
GS
= 0 V
28
24
20
16
D
T = 25°C
J
V
GS
t
t
r
f
100
12
8
t
d(off)
4
t
d(on)
10
0
1
10
R , GATE RESISTANCE (W)
100
0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92 0.96
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
350
V
GS
= 20 V
R
Limit
DS(on)
I
D
= 32 A
SINGLE PULSE
= 25°C
Thermal Limit
Package Limit
300
250
200
150
100
50
T
C
100
10
1
dc
10 ms
1 ms
100 ms
Mounted on 3″ sq. FR4 board (1″ sq.
2 oz. Cu 0.06″ thick single sided)
with one die operating,10 s max
0.1
0
0.1
1
10
100
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTD32N06L
10
Normalized to R
at Steady State
q
JC
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
10
Normalized to R
1″ square Cu Pad, Cu Area 1.127 in ,
at Steady State,
q
JA
2
3 x 3 inch FR4 board
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1
10
100
1000
Figure 14. Thermal Response
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5
NTD32N06L
PACKAGE DIMENSIONS
DPAK−3
CASE 369C−01
ISSUE O
SEATING
PLANE
−T−
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
STYLE 2:
PIN 1. GATE
2. DRAIN
G
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
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6
NTD32N06L
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
G
M
PIN 1. GATE
0.13 (0.005)
T
2. DRAIN
3. SOURCE
4. DRAIN
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7
NTD32N06L
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NTD32N06L/D
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