NTD32N06L-1G [ONSEMI]
Power MOSFET 32 Amps, 60 Volts; 功率MOSFET 32安培， 60伏
| 型号： | NTD32N06L-1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 32 Amps, 60 Volts |
| 文件： | 总7页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD32N06L
Power MOSFET
32 Amps, 60 Volts
Logic Level, N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
V
DSS
R
TYP
I MAX
D
DS(ON)
Features
•ꢀSmaller Package than MTB30N06VL
60 V
23.7 mW
32 A
•ꢀLower R
, V
, and Total Gate Charge
DS(on)
DS(on)
•ꢀLower and Tighter V
N-Channel
SD
D
•ꢀLower Diode Reverse Recovery Time
•ꢀLower Reverse Recovery Stored Charge
•ꢀPb-Free Packages are Available
Typical Applications
•ꢀPower Supplies
•ꢀConverters
G
S
•ꢀPower Motor Controls
•ꢀBridge Circuits
MARKING DIAGRAMS
& PIN ASSIGNMENTS
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
4
Drain
Rating
Symbol Value
Unit
Drain-to-Source Voltage
V
V
60
60
Vdc
Vdc
Vdc
DSS
Drain-to-Gate Voltage (R = 10 MW)
GS
DGR
4
DPAK
Gate-to-Source Voltage
- Continuous
V
V
"20
"30
CASE 369C
(Surface Mount)
STYLE 2
GS
GS
- Non-Repetitive (t v10 ms)
p
2
1
Drain Current - Continuous @ T = 25°C
I
32
22
90
Adc
Apk
3
A
D
- Continuous @ T = 100°C
I
D
A
2
Drain
I
DM
1
Gate
- Single Pulse (t v10 ms)
3
Source
p
Total Power Dissipation @ T = 25°C
P
D
93.75
0.625
2.88
1.5
W
W/°C
W
A
Derate above 25°C
Total Power Dissipation @ T = 25°C (Note 1)
Total Power Dissipation @ T = 25°C (Note 2)
A
4
Drain
W
A
Operating and Storage Temperature Range
T , T
J
-ꢁ55 to
+175
°C
4
stg
DPAK
CASE 369D
(Straight Lead)
STYLE 2
Single Pulse Drain-to-Source Avalanche
Energy - Starting T = 25°C (Note 3)
E
313
mJ
AS
J
(V = 50 Vdc, V = 5 Vdc, L = 1.0 mH,
DD
GS
1
I
= 25 A, V = 60 Vdc, R = 25 W)
DS G
L(pk)
2
3
Thermal Resistance
Junction-to-Case
°C/W
°C
-
R
R
R
1.6
52
100
q
JC
JA
JA
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
1
2
3
Gate Drain Source
q
q
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
260
L
Y
WW
= Year
= Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
32N06L
G
= Device Code
= Pb-Free Package
1. When surface mounted to FR4 board using 0.5 in pad size.
2. When surface mounted to FR4 board using minimum recommended pad size.
3. Repetitive rating; pulse width limited by maximum junction temperature.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©ꢀ Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 5
1
Publication Order Number:
NTD32N06L/D
NTD32N06L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 4)
(V = 0 Vdc, I = 250 mAdc)
V
Vdc
(BR)DSS
60
-
70
62
-
-
GS
D
mV/°C
mAdc
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V = 60 Vdc, V = 0 Vdc)
I
DSS
-
-
-
-
1.0
10
DS
GS
(V = 60 Vdc, V = 0 Vdc, T = 150°C)
DS
GS
J
Gate-Body Leakage Current (V
=
ꢁ20 Vdc, V = 0 Vdc)
DS
I
-
-
100
nAdc
GS
GSS
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
(V = V , I = 250 mAdc)
V
Vdc
mV/°C
mW
GS(th)
1.0
-
1.7
4.8
2.0
-
DS
GS
D
Threshold Temperature Coefficient (Negative)
Static Drain-to-Source On-Resistance (Note 4)
(V = 5 Vdc, I = 16 Adc)
R
V
DS(on)
-
23.7
28
GS
D
Static Drain-to-Source On-Resistance (Note 4)
(V = 5 Vdc, I = 20 Adc)
(V = 5 Vdc, I = 32 Adc)
Vdc
DS(on)
-
-
-
0.48
0.78
0.61
0.67
-
-
GS
D
GS
D
(V = 5 Vdc, I = 16 Adc, T = 150°C)
GS
D
J
Forward Transconductance (Note 4) (V = 6 Vdc, I = 16 Adc)
DS D
g
FS
-
27
-
mhos
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
C
-
-
-
1214
343
87
1700
480
iss
(V = 25 Vdc, V = 0 Vdc,
DS
GS
f = 1.0 MHz)
Output Capacitance
C
oss
Transfer Capacitance
C
180
rss
SWITCHING CHARACTERISTICS (Note 5)
Turn-On Delay Time
t
-
-
-
-
-
-
-
12.8
221
37
30
450
80
260
50
-
ns
d(on)
(V = 30 Vdc, I = 32 Adc,
DD
Rise Time
D
= 5 Vdc,
t
r
V
GS
= 9.1 W) (Note 4)
Turn-Of f Delay Time
Fall Time
t
d(off)
R
G
t
f
128
23
Q
T
Q
1
Q
2
Gate Charge
nC
(V = 48 Vdc, I = 32 Adc,
DS
D
= 5 Vdc) (Note 4)
4.5
14
V
GS
-
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(I = 20 Adc, V = 0 Vdc) (Note 4)
V
SD
-
-
-
0.89
0.95
0.74
1.0
-
-
Vdc
ns
S
GS
(I = 32 Adc, V = 0 Vdc) (Note 4)
S
GS
(I = 20 Adc, V = 0 Vdc, T = 150°C)
S
GS
J
t
rr
-
-
-
-
56
31
-
-
-
-
Reverse Recovery Time
(I = 32 Adc, V = 0 Vdc,
S
GS
dI /dt = 100 A/ms) (Note 4)
t
a
S
t
b
25
Reverse Recovery Stored Charge
Q
0.093
mC
RR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Device
Package
Shipping
NTD32N06L
DPAK
75 Units / Rail
75 Units / Rail
NTD32N06LG
DPAK
(Pb-Free)
NTD32N06L-1
DPAK (Straight Lead)
75 Units / Rail
75 Units / Rail
NTD32N06L-1G
DPAK (Straight Lead)
(Pb-Free)
NTD32N06LT4
DPAK
2500 Units / Tape & Reel
2500 Units / Tape & Reel
NTD32N06LT4G
DPAK
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NTD32N06L
60
50
40
30
20
10
0
60
V
= 10 V
V
> = 10 V
GS
DS
V
= 4.5 V
GS
50
40
30
20
10
0
V
V
= 5 V
GS
V
= 4 V
GS
= 6 V
= 8 V
GS
V
GS
= 3.5 V
= 3 V
V
GS
T = 25°C
J
V
GS
T = 100°C
J
T
J
= -55°C
0
1
2
3
4
1.8
2.2
2.6
, GATE-T O-SOURCE VOLTAGE (VOLTS)
GS
3
3.4
3.8
4.2
4.6
5
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.042
0.042
0.038
0.034
0.03
V
GS
= 5 V
V
GS
= 10 V
0.038
0.034
0.03
T = 100°C
J
T = 25°C
J
T = 100°C
J
0.026
0.022
0.018
0.026
0.022
0.018
0.014
0.01
T = 25°C
J
T
J
= -55°C
T
J
= -55°C
0.014
0.01
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On-Resistance vs. Drain Current
Figure 4. On-Resistance vs. Drain Current
10000
1000
100
1.8
1.6
V
GS
= 0 V
I
= 16 A
= 5 V
D
T = 150°C
J
V
GS
1.4
1.2
1
T = 125°C
J
T = 100°C
J
0.8
10
0.6
-50 -25
0
25
50
75 100 125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
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3
NTD32N06L
6
4000
3600
3200
2800
2400
2000
1600
1200
800
V
= 0 V
V
= 0 V
T = 25°C
DS
GS
J
Q
T
5
4
3
2
1
0
V
GS
C
C
iss
rss
Q
Q
2
1
C
iss
C
C
oss
I
D
= 32 A
400
T = 25°C
J
rss
0
10
V
GS
V
DS
5
0
5
10
15
20
25
0
4
8
12
16
20
24
GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
1000
32
V
I
= 30 V
DS
= 32 A
= 5 V
V
= 0 V
GS
28
24
20
16
D
T = 25°C
J
V
GS
t
t
r
f
100
12
8
t
d(off)
4
t
d(on)
10
0
0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92 0.96
1
10
R , GATE RESISTANCE (W)
100
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
350
1000
100
0 V v V v 5 V
GS
SINGLE PULSE
I
D
= 32 A
300
250
200
150
100
50
T
C
= 25°C
dc
10
100 ms
10 ms
1 ms
100 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0
0.1
1
10
100
25
50
75
100
125
150
175
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTD32N06L
10
Normalized to R
at Steady State
q
JC
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
10
Normalized to R
at Steady State,
q
JA
2
1″ square Cu Pad, Cu Area 1.127 in ,
3 x 3 inch FR4 board
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1
10
100
1000
Figure 14. Thermal Response
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5
NTD32N06L
PACKAGE DIMENSIONS
DPAK
CASE 369C-01
ISSUE O
NOTES:
SEATING
PLANE
-T-
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
R
E
V
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
U
4.58 BSC
0.87
0.46
2.60
1.01
0.58
2.89
K
L
F
J
2.29 BSC
L
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
---
1.27
---
H
0.020
0.035 0.050
0.155 ---
---
D 2 PL
M
G
0.13 (0.005)
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTD32N06L
PACKAGE DIMENSIONS
DPAK
CASE 369D-01
ISSUE B
NOTES:
C
B
R
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
4
2
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
A
K
1
3
-T-
SEATING
PLANE
2.29 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
---
J
F
H
0.155
---
D 3 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
G
M
T
0.13 (0.005)
3. SOURCE
4. DRAIN
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTD32N06L/D
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