NTD30N02T4 [ONSEMI]
Power MOSFET 30 Amps, 24 Volts; 功率MOSFET 30安培， 24伏
| 型号： | NTD30N02T4 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30 Amps, 24 Volts |
| 文件： | 总6页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD30N02
Power MOSFET
30 Amps, 24 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
30 AMPERES
24 VOLTS
DS(on) = 11.2 mW (Typ.)
R
N−Channel
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
V
24
Vdc
Vdc
Adc
DSS
G
V
"20
GS
− Continuous @ T = 25°C
I
30
100
A
D
S
− Single Pulse (t v10 µs)
I
Apk
W
p
DM
Total Power Dissipation @ T = 25°C
P
75
MARKING
DIAGRAM
A
D
Operating and Storage Temperature Range
T , T
−55 to
150
°C
J
stg
4
4
Single Pulse Drain−to−Source Avalanche
E
AS
50
mJ
Drain
Energy − Starting T = 25°C
J
(V = 24 Vdc, V = 10 Vdc,
2
3
1
DD
GS
L = 1.0 mH, I (pk) = 10 A, R = 25 Ω)
L
G
DPAK
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
°C/W
CASE 369C
(Surface Mount)
Style 2
R
R
R
1.65
67
120
θ
JC
JA
JA
θ
θ
2
1
3
Drain
Gate
Source
Maximum Lead Temperature for Soldering
T
L
260
°C
Purposes, 1/8″ from case for 10 seconds
D30N02
Y
WW
= Device Code
= Year
= Work Week
1. When surface mounted to an FR4 board using 1″ pad size,
2
(Cu Area 1.127 in ).
2. When surface mounted to an FR4 board using minimum recommended pad
2
size, (Cu Area 0.412 in ).
ORDERING INFORMATION
†
Device
Package
DPAK
Shipping
NTD30N02
75 Units/Rail
2500 Tape & Reel
NTD30N02T4
DPAK
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
March, 2004 − Rev. 2
NTD30N02/D
NTD30N02
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
V
Vdc
(BR)DSS
(V = 0 Vdc, I = 250 µAdc)
Temperature Coefficient (Positive)
24
−
26.5
25.5
−
−
GS
D
mV/°C
mAdc
Zero Gate Voltage Drain Current
I
DSS
(V = 20 Vdc, V = 0 Vdc)
−
−
−
−
−
−
0.8
1.0
10
DS
GS
(V = 24 Vdc, V = 0 Vdc)
DS
GS
(V = 20 Vdc, V = 0 Vdc, T = 125°C)
DS
GS
J
Gate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc)
I
−
−
±100
nAdc
Vdc
GS
DS
GSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V = V , I = 250 µAdc)
V
GS(th)
1.0
−
2.1
−4.1
3.0
−
DS
GS
D
Threshold Temperature Coefficient (Negative)
mV/°C
mW
Static Drain−to−Source On−Resistance (Note 3)
R
DS(on)
(V = 10 Vdc, I = 30 Adc)
−
−
−
−
11.2
20
14.5
14.5
24
GS
D
(V = 10 Vdc, I = 20 Adc)
GS
D
(V = 4.5 Vdc, I = 15 Adc)
GS
D
Forward Transconductance (Note 3) (V = 10 Vdc, I = 15 Adc)
g
FS
−
20
−
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
1000
425
−
−
−
iss
(V = 20 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Transfer Capacitance
C
175
rss
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
−
−
−
−
−
−
−
−
−
−
−
7.0
28
15
55
35
20
−
ns
ns
d(on)
Rise Time
t
r
(V = 20 Vdc, I = 30 Adc,
DD
GS
D
V
= 10 Vdc, R = 2.5 Ω)
G
Turn−Off Delay Time
Fall Time
t
t
t
22
d(off)
t
f
12
Turn−On Delay Time
Rise Time
12.5
115
15
d(on)
t
r
−
(V = 20 Vdc, I = 15 Adc,
DD
GS
D
V
= 4.5 Vdc, R = 2.5 Ω)
G
Turn−Off Delay Time
Fall Time
−
d(off)
t
f
17
−
Gate Charge
Q
T
Q
1
Q
2
14.4
4.0
8.5
20
−
nC
(V = 20 Vdc, I = 30 Adc,
DS
D
V
GS
= 4.5 Vdc) (Note 3)
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = 15 Adc, V = 0 Vdc)
V
SD
−
−
−
0.95
1.10
0.80
1.2
−
−
Vdc
ns
S
GS
(I = 30 Adc, V = 0 Vdc) (Note 3)
S
GS
(I = 15 Adc, V = 0 Vdc, T = 125°C)
S
GS
J
Reverse Recovery Time
t
rr
−
−
−
−
30
−
−
−
−
(I = 30 Adc, V = 0 Vdc,
S
GS
t
a
14.5
15.5
0.013
dI /dt = 100 A/µs) (Note 3)
S
t
b
Reverse Recovery Stored Charge
Q
mC
RR
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD30N02
60
50
40
30
20
10
0
60
V
= 9 V
GS
V
≥ 10 V
DS
5 V
50
40
30
8 V
7 V
T = 25°C
J
4.6 V
6 V
4.2 V
4 V
5.4 V
20
10
0
T = 25°C
J
3.4 V
3.6 V
T = 100°C
J
T = −55°C
3 V
7
J
0
1
2
3
4
5
6
8
1
2
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.04
0.03
0.02
0.01
0.07
T = 25°C
J
I
= 15 A
D
0.06
0.05
0.04
0.03
0.02
0.01
T = 25°C
J
V
GS
= 4.5 V
V
GS
= 10 V
50
0
2
3
4
5
6
7
8
9
10
10
20
30
40
60
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
1.4
100
10
1
V
GS
= 0 V
I
V
= 15 A
D
= 10 V
GS
T = 150°C
J
1.2
1
0.1
T = 100°C
J
0.8
0.01
0.6
−50 −25
0
25
50
75
100
125 150
4
8
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
12
16
20
24
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTD30N02
2500
2000
C
V
DS
= 0 V
V
GS
= 0 V
iss
T = 25°C
J
C
rss
1500
1000
C
iss
C
oss
500
0
C
rss
10
5
0
5
10
15
20
25
V
GS
V
DS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
5
4
3
2
20
16
12
8
V
DS
V
DS
= 20 V
Q
T
I
D
= 30 A
V
GS
= 10 V
Q
Q
1
V
GS
2
100
t
d(off)
t
f
t
r
10
1
I
V
V
= 30 A
D
= 20 V
DS
t
d(on)
4
0
1
0
= 4.5 V
GS
T = 25°C
J
0
4
8
12
16
1
10
100
Q , TOTAL GATE CHARGE (nC)
G
R , GATE RESISTANCE (Ω)
G
Figure 8. Gate−to−Source and Drain−to−Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
15
V
GS
= 0 V
T = 25°C
J
12
9
6
3
0
0.3 0.4 0.5 0.6
0.7 0.8 0.9
1
1.1 1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
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4
NTD30N02
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
SEATING
PLANE
−T−
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
STYLE 2:
PIN 1. GATE
2. DRAIN
G
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NTD30N02
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTD30N02/D
相关型号：
NTD30N02T4G
30A, 24V, 0.0145ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3
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