NTBLS1D7N08H [ONSEMI]
MOSFET - Power, Single, N-Channel, TOLL, 80 V, 1.7 mΩ, 203 A;
| 型号： | NTBLS1D7N08H |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Single, N-Channel, TOLL, 80 V, 1.7 mΩ, 203 A |
| 文件： | 总8页 (文件大小：358K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel, TOLL
80 V, 1.7 mW, 203 A
NTBLS1D7N08H
Features
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
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G
• Lowers Switching Noise/EMI
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
80 V
1.7 mW @ 10 V
203 A
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
G
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
203
143
167
83
A
C
D
S
q
JC
T
C
(Notes 1, 3)
Steady
State
N−CHANNEL MOSFET
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
29
q
JA
T = 100°C
A
21
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
3.5
1.7
1173
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
TOLL
Pulsed Drain Current
T
C
= 25°C, t = 100 ms
I
A
p
DM
CASE 100CU
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
MARKING DIAGRAM
Source Current (Body Diode)
I
S
139
A
Single Pulse Drain−to−Source Avalanche
E
AS
1093.5
mJ
Energy (I
= 27 A)
L(pk)
AYWWZZ
1D7N08H
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1D7N08H = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.9
Unit
Junction−to−Case − Steady State (Note 1)
R
°C/W
q
JC
Junction−to−Ambient − Steady State
(Notes 1, 2)
R
43
q
JA
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2021 − Rev. 2
NTBLS1D7N08H/D
NTBLS1D7N08H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
57
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 80 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
Gate Threshold Voltage
V
V
= V , I = 479 mA
2.0
2.9
4.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I
= 479 mA, ref to 25°C
−7.3
1.29
1.76
271
mV/°C
GS(TH)
J
D
R
V
GS
= 10 V
= 6 V
I
= 80 A
= 43 A
1.7
2.6
DS(on)
D
D
mW
V
I
GS
Forward Transconductance
g
FS
V
DS
= 5 V, I = 80 A
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
7675
1059
41
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 40 V
GS
DS
pF
nC
Reverse Transfer Capacitance
Gate−Resistance
R
0.6
121
19
G
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
32
V
GS
= 10 V, V = 40 V; I = 80 A
GS
GD
GP
DS
D
Q
V
29
4.5
149
V
Output Charge
Q
V
GS
= 0 V, V = 40 V
nC
OSS
DD
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
t
29
25
89
35
d(ON)
t
r
V
= 10 V, V = 40 V,
DS
GS
D
ns
V
I
= 80 A, R = 6 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
0.82
0.69
73
1.2
J
V
S
= 0 V,
= 80 A
GS
I
T = 125°C
J
Reverse Recovery Time
t
ns
RR
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 43 A
Reverse Recovery Charge
Q
138
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTBLS1D7N08H
TYPICAL CHARACTERISTICS
30
250
200
150
100
10 V
8.0 V
5.0 V
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
V
GS
= 4.5 V
24
18
12
6.0 V
4.5 V
5.0 V
50
0
6
0
10 V
8 V
V
= 4.0 V
GS
6 V
0
1
2
3
4
5
0
50
100
150
200
250
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
50
40
30
20
I
D
= 80 A
I
V
= 80 A
D
= 10 V
GS
T = 25°C
J
10
0
0.8
0.6
T = 150°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs. Gate−to−Source
Junction Temperature
Voltage
250
200
150
100
250
200
150
100
V
DS
= 5 V
V
GS
= 0 V
T = 25°C
J
T = 25°C
J
50
0
50
0
T = 175°C
T = 175°C
J
J
T = −55°C
T = −55°C
J
J
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
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3
NTBLS1D7N08H
TYPICAL CHARACTERISTICS
10
8
100K
V
DD
= 30 V
I
D
= 80 A
C
V
DD
= 40 V
ISS
10K
1K
V
DD
= 50 V
6
C
OSS
100
4
C
RSS
10
1
2
0
f = 1 MHz
= 0 V
V
GS
0
26
52
78
104
130
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
80
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain−to−Source
Voltage
250
200
150
100
100K
10K
1K
V
= 10 V
= 6 V
GS
V
GS
100
10
50
0
R
= 0.9°C/W
q
JC
25
50
75
100
125
150
175
0.00001 0.0001
0.001
0.01
0.1
1
T , CASE TEMPERATURE (°C)
C
t, PULSE WIDTH (s)
Figure 9. Drain Current vs. Case Temperature
Figure 10. Peak Power
1000
100
2000
1000
10 ms
100 ms
100
10
1
T
= 25°C
J(initial)
1 ms
T
= 100°C
J(initial)
T
= 25°C
C
10 ms
T
= 150°C
Single Pulse
R
J(initial)
= 0.9°C/W
q
JC
10
1
100 ms/DC
R
Limit
DS(on)
0.1
Thermal Limit
Package Limit
0.01
0.001 0.01
0.1
1
10
100
1000
0.1
1
10
100
t , TIME IN AVALANCHE (mS)
AV
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Unclamped Inductive Switching
Capability
Figure 12. Forward Bias Safe Operating Area
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4
NTBLS1D7N08H
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Notes:
= 0.9°C/W
P
DM
R
q
JC
0.01
0.01
Peak T = P
x Z
(t) + T
C
q
J
DM
JC
t
1
Duty Cycle, D = t /t
1
2
Single Pulse
t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
†
Device
Marking
Package
Shipping
NTBLS1D7N08H
1D7N08H
M0−299A
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTBLS1D7N08H
PACKAGE DIMENSIONS
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE A
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6
NTBLS1D7N08H
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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