NTBLS4D0N15MC [ONSEMI]
MOSFET - Power, Single, N-Channel, TOLL, 150 V, 4.4 mΩ, 187A;
| 型号： | NTBLS4D0N15MC |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Single, N-Channel, TOLL, 150 V, 4.4 mΩ, 187A |
| 文件： | 总8页 (文件大小：439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Single N-Channel
150 V, 4.4 mW, 187 A
NTBLS4D0N15MC
Features
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
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G
• Lowers Switching Noise/EMI
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
150 V
4.4 mW @ 10 V
4.9 mW @ 8 V
187 A
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
G
Symbol
Parameter
Drain−to−Source Voltage
Value
150
20
Unit
V
V
DSS
S
V
GS
Gate−to−Source Voltage
V
N−CHANNEL MOSFET
I
D
Continuous Drain
Steady
State
T
C
= 25°C
187
A
Current R
(Note 2)
q
JC
P
Power Dissipation
(Note 2)
316
19
W
A
D
R
q
JC
I
D
Continuous Drain
Current R
Steady
State
T = 25°C
A
q
JA
(Notes 1, 2)
Top
Bottom
H−PSOF8L 11.68x9.80
P
D
Power Dissipation
3.4
W
R
(Notes 1, 2)
q
JA
MO−299A
CASE 100CU
I
Pulsed Drain Current
T = 25°C, t = 10 ms
2255
A
DM
A
p
T , T
Operating Junction and Storage Temperature
Range
−55 to
175
°C
J
stg
MARKING DIAGRAM
I
Source Current (Body Diode)
263
332
A
S
E
AS
Single Pulse Drain−to−Source Avalanche
mJ
&Z&3&K
4D0N
Energy (I = 81.5 A , L = 0.1 mH)
L
pk
15MC
T
L
Lead Temperature Soldering Reflow for
Soldering Purposes (1/8″ from case for 10 s)
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
4D0N15MC
= Specific Device Code
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
ORDERING INFORMATION
†
Device
NTBLS4D0N15MC
Package
Shipping
MO−299A
(Pb−Free)
2000 / Tape
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2020 − Rev. 3
NTBLS4D0N15MC/D
NTBLS4D0N15MC
THERMAL RESISTANCE RATINGS
Symbol
Parameter
Max
0.5
43
Unit
Junction−to−Case – Steady State (Note 2)
Junction−to−Ambient – Steady State (Note 2)
°C/W
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
Drain−to−Source Breakdown Voltage
V
= 0 V, I = 250 mA
150
−
−
−
V
(BR)DSS
GS
D
V
/ T
Drain−to−Source Breakdown Voltage
Temperature Coefficient
I = 250 mA, ref to 25°C
D
−
30.23
mV/°C
(BR)DSS
J
I
Zero Gate Voltage Drain Current
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
1
mA
mA
nA
DSS
GS
DS
J
= 120 V
T = 125°C
J
10
100
I
Gate−to−Source Leakage Current
V
DS
= 0 V, V =
GS
20 V
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
GS
= V , I = 584 mA
2.5
3.7
4.5
V
GS(TH)
DS
D
V
/ T
Negative Threshold Temperature Coefficient
I = 250 mA, ref to 25°C
D
−
−
−10.12
−
mV/°C
mW
GS(TH)
J
R
Drain−to−Source On Resistance
3.1
4.4
DS(on)
V
GS
V
GS
V
DS
= 10 V, I = 80 A
D
= 8 V, I = 53 A
−
−
−
3.5
174
1.3
4.9
−
D
g
FS
Forward Transconductance
= 5 V, I = 80 A
S
D
R
Gate−Resistance
T = 25°C
A
−
W
G
CHARGES & CAPACITANCES
C
Input Capacitance
V
V
= 0 V, f = 1 MHz,
= 75 V
−
−
−
−
−
−
−
−
−
7490
2055
27.2
90.4
24.7
40.2
12.6
5.7
−
−
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
C
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
OSS
RSS
C
Q
V
D
= 10 V, V = 75 V,
= 80 A
G(TOT)
GS DS
I
Q
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
G(TH)
Q
GS
GD
GP
Q
V
V
Q
Output Charge
V
V
= 0 V, V = 75 V
251
nC
OSS
GS
DS
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
t
Turn−On Delay Time
Rise Time
= 10 V, V =75 V,
−
−
−
−
47
115
58
−
−
−
−
ns
d(ON)
GS
DS
I
= 80 A, R = 6 W
D
G
t
r
t
Turn−Off Delay Time
Fall Time
d(OFF)
t
f
11
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
S
= 0 V,
T = 25°C
−
−
0.86
0.75
1.2
V
GS
J
I
= 80 A
T = 125°C
J
−
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2
NTBLS4D0N15MC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Reverse Recovery Time
Test Condition
Min
−
Typ
84
Max
−
Unit
t
V
S
= 0 V, dI /dt = 100 A/ms,
ns
RR
GS
S
I
= 80 A
t
t
Charge Time
−
55
−
a
Discharge Time
−
29
−
b
Q
Reverse Recovery Charge
−
180
nC
RR
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
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3
NTBLS4D0N15MC
TYPICAL CHARACTERISTICS
180
165
150
135
120
105
90
180
10 V to 6.5 V
V
DS
= 5 V
165
150
135
120
105
90
V
GS
= 6.0 V
75
75
T = 25°C
J
60
60
5.5 V
5.0 V
45
30
15
0
45
30
15
0
T = 125°C
J
T = −55°C
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.5 6.0
, DRAIN−TO−SOURCE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
10
V
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
20
4.5
4.0
T = 25°C
D
T = 25°C
J
J
18
16
14
12
10
8
I
= 80 A
V
GS
= 8 V
3.5
3.0
V
GS
= 10 V
6
2.5
2.0
4
2
0
5.5 6.0 6.5 7.0
7.5 8.0 8.5 9.0
9.5 10
0
31
62
93
124
155
186
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
2.0
1M
V
= 10 V
= 80 A
GS
I
D
100K
10K
T = 175°C
J
T = 150°C
J
1.5
1.0
0.5
T = 125°C
J
1K
V
GS
= 0 V
100
−50 −25
0
25
50
75 100 125 150 175
0
30
60
90
120
150
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTBLS4D0N15MC
TYPICAL CHARACTERISTICS
10
10K
1K
Q
T
C
iss
9
8
7
6
5
4
3
2
1
0
C
oss
Q
Q
GD
GS
100
C
rss
10
1
V = 75 V
DS
V
= 0 V
GS
I
D
= 80 A
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
1000
100
10
1000
100
V
V
= 10 V
= 75 V
= 80 A
V
GS
= 0 V
GS
DS
I
D
t
r
t
d(off)
t
d(on)
10
1
t
f
1
T = 175°C
J
T = 150°C
T = 25°C T = −55°C
J J
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.2 0.3
0.4
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.5
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
10 ms
T
= 25°C
100
J(initial)
100 ms
Single Pulse
10
1
T
C
= 25°C
T
= 100°C
J(initial)
V
GS
≤ 10 V
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms & 1 s
100
0.1
1
10
0.000001
0.0001
0.001
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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5
NTBLS4D0N15MC
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
20%
10%
5%
2%
1%
0.01
0.001
Single Pulse
0.000001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 13. Thermal Characteristics (Junction−to−Ambient)
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE C
DATE 22 MAY 2023
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
= Assembly Location
= Year
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
XXXX = Specific Device Code
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13813G
H−PSOF8L 11.68x9.80
PAGE 1 OF 1
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