NTBG020N120SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L;型号: | NTBG020N120SC1 |
厂家: | ONSEMI |
描述: | Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L |
文件: | 总7页 (文件大小:341K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
20ꢀmohm, 1200ꢀV, M1,
D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
28 mW @ 20 V
98 A
Drain
(TAB)
NTBG020N120SC1
Gate
(Pin 1)
Features
• Typ. R
= 20 mW
• Ultra Low Gate Charge (Q
DS(on)
Driver
Source
(Pin 2)
= 220 nC)
G(tot)
Power Source
(Pin 3, 4, 5, 6, 7)
• High Speed Switching with Low Capacitance (C = 258 pF)
oss
N−CHANNEL MOSFET
• 100% Avalanche Tested
• T = 175°C
J
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• UPS
• DC−DC Converter
• Boost Inverter
D2PAK−7L
CASE 418BJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain−to−Source Voltage
Symbol
Value
1200
Unit
V
V
DSS
AYWWZZ
NTBG
020120SC1
Gate−to−Source Voltage
V
GS
−15/+25
−5/+20
V
Recommended Operation Val-
T
< 175°C
= 25°C
V
V
C
GSop
ues of Gate−to−Source Voltage
A
Y
= Assembly Location
= Year
WW = Work Week
= Lot Traceability
NTBG020120SC1 = Specific Device Code
Continuous Drain
Current (Note 2)
I
D
98
468
8.6
3.7
392
A
W
A
Steady
State
T
C
Power Dissipation
(Note 2)
P
I
D
ZZ
Continuous Drain
Current (Notes 1, 2)
Steady
State
T = 25°C
A
D
ORDERING INFORMATION
Power Dissipation
(Notes 1, 2)
P
D
W
A
†
Device
Package
Shipping
Pulsed Drain Current
(Note 3)
T = 25°C
A
I
DM
800 /
NTBG020N120SC1
D2PAK−7L
Tape & Reel
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Source Current (Body Diode)
I
S
46
A
Single Pulse Drain−to−Source Avalanche
E
AS
264
mJ
Energy (I
= 23 A, L = 1 mH) (Note 4)
L(pk)
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface mounted on a FR−4 board using1 in pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive rating, limited by max junction temperature.
4. EAS of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23 A,
J
AS
V
DD
= 120 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2023 − Rev. 5
NTBG020N120SC1/D
NTBG020N120SC1
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Max
0.32
41
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Notes 1, 2)
R
°C/W
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
1200
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 1 mA, referenced to 25°C
D
0.5
V/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
100
1
mA
mA
mA
DSS
GS
DS
J
= 1200 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= +25/−15 V, V = 0 V
1
GSS
GS
GS
DS
V
R
V
= V , I = 20 mA
1.8
2.7
4.3
+20
28
V
V
GS(TH)
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
−5
GOP
V
GS
V
GS
V
DS
= 20 V, I = 60 A, T = 25°C
20
35
34
mW
DS(on)
D
J
= 20 V, I = 60 A, T = 175°C
50
D
J
Forward Transconductance
g
= 20 V, I = 60 A
S
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
2943
258
24
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
D
= −5/20 V, V = 600 V,
220
33
nC
G(TOT)
GS
DS
I
= 80 A
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
G(TH)
Q
66
GS
GD
Q
63
R
f = 1 MHz
1.6
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
V
D
R
= −5/20 V,
22
20
35
32
67
18
ns
d(ON)
GS
DS
= 800 V,
Rise Time
t
r
I
= 80 A,
= 2 W
G
Turn−Off Delay Time
t
42
d(OFF)
inductive load
Fall Time
t
f
9
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
461
400
861
mJ
ON
E
OFF
E
tot
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
Current
I
V
GS
= −5 V, T = 25°C
46
A
SD
J
Pulsed Drain−Source Diode Forward
Current (Note 3)
I
392
SDM
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
V
= −5 V, I = 30 A, T = 25°C
3.7
31
V
SD
GS
SD
J
t
= −5/20 V, I = 80 A,
ns
nC
RR
GS
S
SD
dI /dt = 1000 A/ms
Q
228
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTBG020N120SC1
TYPICAL CHARACTERISTICS
250
200
150
100
2.5
20 V
V
GS
= 16 V
2.0
1.5
V
GS
= 16 V
19 V
18 V
17 V
20 V
19 V
18 V
1.0
0.5
50
0
17 V
0
2
4
6
8
10
0
5
1
50
100
150
200
250
V
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
160
120
80
1.9
1.7
1.5
1.3
1.1
I
= 60 A
D
I
V
= 60 A
D
= 20 V
GS
T = 150°C
J
40
0
0.9
0.7
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
10
15
20
T , JUNCTION TEMPERATURE (°C)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
J
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
120
100
80
300
V
= 20 V
DS
T = 175°C
T = 25°C
J
J
T = −55°C
J
60
30
T = 175°C
J
40
T = 25°C
J
20
0
V
= −5 V
GS
T = −55°C
J
3
2
4
6
8
10
12
14
16
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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3
NTBG020N120SC1
TYPICAL CHARACTERISTICS (continued)
20
15
10
5
100K
V
DD
= 400 V
10K
1K
V
DD
= 600 V
V
= 800 V
DD
C
iss
C
oss
100
C
rss
10
1
0
f = 1 MHz
I
= 80 A
D
V
GS
= 0 V
−5
0
50
100
150
200
250
0.1
1
10
100
800
175
0.1
Q , GATE CHARGE (nC)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
500
100
120
100
V
GS
= 20 V
80
60
40
T = 25°C
J
10
1
T = 150°C
J
20
0
Typical Characteristics
R
= 0.32°C/W
q
JC
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t
AV
, TIME IN AVALANCHE (ms)
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
2000
1000
100K
10K
1K
Single Pulse
R
= 0.32°C/W
= 25°C
q
JC
T
C
100
10
10 ms
This Area is
Limited by R
100 ms
DS(on)
1 ms
T
= 25°C
Single Pulse
T = Max Rated
C
1
Curve Bent to
Measured Data
10 ms
100 ms
J
R
= 0.32°C/W
q
JC
100
0.1
0.1
1
10
100
1000 5000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
NTBG020N120SC1
TYPICAL CHARACTERISTICS (continued)
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
Notes:
(t) = r(t) x R
P
1%
DM
Z
q
0.01
q
JC
JC
Single Pulse
R
= 0.32°C/W
q
JC
t
Peak T = P
x Z
(t) + T
JC C
1
q
J
DM
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATIONTIME (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D2PAK7 (TO−263−7L HV)
PAGE 1 OF 1
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