NTBG025N065SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L;
| 型号： | NTBG025N065SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L |
| 文件： | 总8页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
19ꢀmohm, 650ꢀV, M2,
D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
650 V
28.5 mW @ 18 V
106 A
Drain (TAB)
NTBG025N065SC1
Gate (Pin 1)
Features
• Typ. R
= 19 mW @ V = 18 V
GS
DS(on)
DS(on)
Typ. R
= 25 mW @ V = 15 V
GS
Driver Source (Pin 2)
• Ultra Low Gate Charge (Q
= 164 nC)
G(tot)
Power Source (Pins 3, 4, 5, 6, 7)
• Low Output Capacitance (C = 278 pF)
oss
N−CHANNEL MOSFET
• 100% Avalanche Tested
• T = 175°C
J
• RoHS Compliant
Typical Applications
D
• SMPS (Switching Mode Power Supplies)
• Solar Inverters
• UPS (Uninterruptable Power Supplies)
• Energy Storage
1
7
D2PAK−7L
CASE 418BJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
650
Unit
V
MARKING DIAGRAM
V
DSS
Gate−to−Source Voltage
V
−8/+22
−5/+18
V
GS
BG025N
065SC1
AYWWZZ
Recommended Operation Val-
ues of Gate − Source Voltage
T
< 175°C
= 25°C
V
GSop
V
C
Continuous Drain
Current (Note 2)
I
106
395
75
A
W
A
Steady
State
T
C
D
BG025N065SC1 = Specific Device Code
Power Dissipation
(Note 2)
P
A
Y
= Assembly Location
= Year
WW = Work Week
D
Continuous Drain
Current (Notes 1, 2)
I
Steady
State
T
C
= 100°C
= 25°C
D
ZZ
= Lot Traceability
Power Dissipation
(Notes 1, 2)
P
197
284
W
D
ORDERING INFORMATION
Pulsed Drain Current (Note 3)
T
I
A
C
DM
†
Device
Package
Shipping
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
NTBG025N065SC1 D2PAK−7L
800 / Tape &
Reel
Source Current (Body Diode)
I
S
83
62
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 11.2 A , L = 1 mH) (Note 4)
L
pk
Maximum Lead Temperature for Soldering, 1/8″
from Case for 10 Seconds
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive rating, limited by max junction temperature.
4. E of 62 mJ is based on starting T = 25°C; L = 1 mH, I = 11.2 A,
AS
DD
J
AS
V
= 50 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2023 − Rev. 1
NTBG025N065SC1/D
NTBG025N065SC1
THERMAL CHARACTERISTICS
Parameter
Symbol
Typ
0.38
−
Max
−
Units
°C/W
°C/W
Thermal Resistance Junction−to−Case (Note 2)
Thermal Resistance Junction−to−Ambient (Notes 1, 2)
R
θ
JC
JA
R
40
θ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
650
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 20 mA, refer to 25°C
D
0.15
V/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
= 0 V
= 650 V
T = 25°C
10
1
mA
mA
nA
DSS
GS
J
V
DS
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= +18/−5 V, V = 0 V
250
GSS
GS
DS
Gate Threshold Voltage
V
R
V
= V , I = 15.5 mA
1.8
2.8
4.3
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
−5
+18
V
= 15 V, I = 45 A, T = 25°C
25
19
24
27
mW
DS(on)
GS
D
J
V
= 18 V, I = 45 A, T = 25°C
28.5
GS
D
J
V
GS
= 18 V, I = 45 A, T = 175°C
D J
Forward Transconductance
g
FS
V
= 10 V, I = 45 A
S
DS
GS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz,
3480
278
25
pF
ISS
V
DS
= 325 V
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
V
= −5/18 V, V = 520 V,
164
48
nC
G(TOT)
GS
DS
= 45 A
I
D
Gate−to−Source Charge
Gate−to−Drain Charge
Q
Q
GS
48
GD
f = 1 MHz
1.5
W
Gate−Resistance
R
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
= −5/18 V, V = 400 V,
17
19
32
8
ns
d(ON)
GS
DS
I
D
= 45 A, R = 2.2 W,
G
Rise Time
t
r
Inductive Load
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
93
84
177
mJ
ON
E
OFF
E
TOT
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
V
V
= −5 V, T = 25°C
83
A
A
V
SD
GS
J
Current
Pulsed Source−Drain Diode Forward Current
(Note 3)
I
= −5 V, T = 25°C
284
SDM
GS
J
Forward Diode Voltage
V
V
GS
= −5 V, I = 45 A, T = 25°C
4.7
SD
SD
J
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2
NTBG025N065SC1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
GS
= −5/18 V, I = 45 A,
25
ns
nC
mJ
A
RR
SD
dI /dt = 1000 A/ms
S
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge time
Q
171
15.8
13.7
14.9
10.6
RR
E
REC
I
RRM
Ta
ns
ns
Discharge time
Tb
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NTBG025N065SC1
TYPICAL CHARACTERISTICS
200
150
100
4
15 V
V
GS
= 18 V
12 V
3
V
GS
= 12 V
2
10 V
15 V
18 V
50
0
9 V
1
0
8 V
7 V
0
2
4
6
8
10
0
10
20
30
40
50
60
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.7
60
I
D
= 45 A
I
D
= 45 A
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
V
GS
= 18 V
50
40
30
T = 25°C
J
T = 150°C
J
20
10
0.8
0.7
−75 −50 −25
0
25 50 75 100 125 150 175 200
8
10
12
14
16
18
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
240
180
120
200
100
V
GS
= −5 V
V
DS
= 10 V
T = 175°C
J
T = 25°C
J
T = 25°C
J
10
1
T = 175°C
J
T = −55°C
J
60
0
T = −55°C
J
4
6
8
10
12
14
16
18
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NTBG025N065SC1
TYPICAL CHARACTERISTICS
10000
18
15
12
9
V
DD
= 390 V
I
D
= 45 A
C
iss
V
DD
= 650 V
V
DD
= 520 V
1000
100
C
oss
6
C
rss
3
10
1
0
f = 1 MHz
−3
−6
V
GS
= 0 V
0
25
50
75
100
125
150
175
0.1
1
10
100
650
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
120
80
T = 25°C
J
V
GS
= 18 V
100
10
1
40
0
R
= 0.38°C/W
q
JC Typ
25
50
75
100
125
150
175
0.001
0.01
0.1
1
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
100K
10K
1K
R
= 0.38°C/W
q
Single Pulse
JC Typ
T = Max rated
J
R
= 0.38°C/W
q
JC Typ
Single Pulse
T
C
= 25°C
100
10
T
C
= 25°C
10 ms
100 ms
1 ms
1
100
10
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
100 ms/DC
100
0.1
0.1
1
10
1000
0.00001 0.0001
0.001
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NTBG025N065SC1
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
Notes:
Single Pulse
0.00001
R
= 0.38°C/W
t
q
JC Typ
1
Duty Cycle, D = t /t
t
1
2
2
0.001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
Figure 13. Junction−to−Case Transient Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D2PAK7 (TO−263−7L HV)
PAGE 1 OF 1
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