NTBG040N120M3S [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L;
| 型号： | NTBG040N120M3S |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L |
| 文件： | 总8页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
MOSFET – EliteSiC,
40ꢀmohm, 1200ꢀV, M3S,
D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
54 mW @ 18 V
57 A
Drain (TAB)
NTBG040N120M3S
Gate (Pin 1)
Features
• Typ. R
= 40 mW @ V = 18 V
GS
DS(on)
• Ultra Low Gate Charge (Q
= 75 nC)
G(TOT)
Driver Source (Pin 2)
Power Source (Pins 3, 4, 5, 6, 7)
• High Speed Switching with Low Capacitance (C
• 100% Avalanche Tested
= 80 pF)
OSS
N−CHANNEL MOSFET
• This Device is Halide Free and RoHS Compliant with Exemption 7a,
Pb−Free 2LI (on Second Level Interconnection)
Typical Applications
• Solar Inverters
• Electric Vehicle Charging Stations
• Uninterruptible Power Supplies (UPS)
• Energy Storage Systems
D2PAK−7L
CASE 418BJ
• Switch Mode Power Supplies (SMPS)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol Value Unit
MARKING DIAGRAM
V
1200
−10/+22
−3/+18
V
V
V
DSS
BG040N
120M3S
AYWWZZ
Gate−to−Source Voltage
V
GS
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
C
Continuous Drain
Current (Notes 2, 3)
Steady
State
T
I
D
57
A
C
BG040N120M3S = Specific Device Code
A
Y
= Assembly Location
= Year
Power Dissipation (Note 2)
P
263
40
W
A
D
Continuous Drain Current
(Notes 2, 3)
Steady T = 100°C
I
D
C
WW = Work Week
ZZ
State
= Lot Traceability
Power Dissipation (Note 2)
P
131
149
W
A
D
Pulsed Drain Current (Note 4)
T
C
= 25°C
I
DM
ORDERING INFORMATION
Operating Junction and Storage Temperature
Range
T , T
−55 to °C
+175
J
stg
Device
Package
Shipping
NTBG040N120M3S
D2PAK−7L
800 / Tape
& Reel
Source Current (Body Diode)
I
S
50
A
T
= 25°C, V = −3 V (Note 2)
C
GS
Single Pulse Drain−to−Source Avalanche Energy
(I = 16.9 A, L = 1 mH) (Note 5)
E
143
270
mJ
°C
AS
L(pk)
Maximum Temperature for Soldering (10 s)
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface mounted on a FR−4 board using1 in pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. The maximum current rating is based on typical RDS(on) performance.
4. Repetitive rating, limited by max junction temperature.
5. E of 143 mJ is based on starting T = 25°C; L = 1 mH, I = 16.9 A,
AS
DD
J
AS
V
= 100 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
March, 2023 − Rev. 0
NTBG040N120M3S/D
NTBG040N120M3S
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.57
40
Unit
Junction−to−Case − Steady State (Note 2)
R
°C/W
q
JC
Junction−to−Ambient − Steady State (Notes 1, 2)
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF−STATE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I
D
= 1 mA, referenced to 25°C
−
0.3
V/°C
(BR)DSS
J
(Note 7)
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON−STATE CHARACTERISTICS
Gate Threshold Voltage
I
V
= 0 V, V = 1200 V
−
−
−
−
100
1
mA
mA
DSS
GS
DS
I
V
= +22/−10 V, V = 0 V
GSS
GS DS
V
R
V
= V , I = 10 mA
2.04
−3
−
2.9
−
4.4
+18
54
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
= 18 V, I = 20 A, T = 25°C
40
80
mW
DS(on)
GS
D
J
V
= 18 V, I = 20 A, T = 175°C
−
−
GS
D
J
(Note 7)
Forward Transconductance
g
FS
V
DS
= 10 V, I = 20 A (Note 7)
−
16
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
1700
80
−
−
−
−
−
−
−
−
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
7
Q
V
= −3/18 V, V = 800 V,
75
nC
G(TOT)
GS
DS
I
= 20 A
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
4.4
14
G(TH)
Q
GS
GD
Q
22
R
f = 1 MHz
3.8
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= −3/18 V,
−
−
−
−
−
−
−
13
16
−
−
−
−
−
−
−
ns
d(ON)
GS
V
= 800 V,
= 20 A,
= 4.7 W
DS
Rise Time
t
r
I
D
R
G
Turn−Off Delay Time
t
38
d(OFF)
Inductive Load (Notes 6, 7)
Fall Time
t
f
10
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
193
66
mJ
E
OFF
E
tot
259
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
V
= −3 V, T = 25°C
−
−
−
−
−
50
149
−
A
V
SD
GS
C
Current (Note 2)
(Note 7)
Pulsed Source−Drain Diode Forward
Current (Note 4)
I
SDM
Forward Diode Voltage
V
V
GS
= −3 V, I = 20 A, T = 25°C
4.5
SD
SD
J
www.onsemi.com
2
NTBG040N120M3S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
S
= −3/18 V, I = 20 A,
−
−
−
−
−
−
16.8
82
−
−
−
−
−
−
ns
nC
mJ
A
RR
GS
SD
dI /dt = 1000 A/ms, V = 800 V
DS
Q
RR
(Note 7)
E
7.9
9.8
9.6
7.2
REC
RRM
I
t
A
t
B
ns
ns
Discharge time
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. E /E
result is with body diode
ON OFF
7. Defined by design, not subject to production test.
www.onsemi.com
3
NTBG040N120M3S
TYPICAL CHARACTERISTICS
120
90
2.0
V
GS
= 15 V to 20 V
V
GS
= 20 V to 15 V
12 V
1.5
1.0
12 V
60
30
0
0.5
0
0
1
2
3
4
5
6
7
8
9
10
0
5
5
30
60
90
V
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.5
2.0
500
400
300
200
I
D
= 20 A
I
= 20 A
= 18 V
D
V
GS
1.5
1.0
T = 25°C
J
T = 150°C
J
0.5
0
100
0
−75 −50 −25
0
25 50 75 100 125 150 175 200
10
15
20
T , JUNCTION TEMPERATURE (°C)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
J
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
80
60
40
300
250
200
150
100
V
= 10 V
R
= 4.7 W
DS
Etot
Eon
G
V
DD
V
GS
= 800 V
= 18/−3 V
T = 175°C
J
T = 25°C
J
Eoff
20
0
50
0
T = −55°C
J
2
6
10
14
18
10
15
20
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , COLLECTOR CURRENT (A)
D
Figure 5. Transfer Characteristics
Figure 6. Switching Loss vs. Collector Current
www.onsemi.com
4
NTBG040N120M3S
TYPICAL CHARACTERISTICS
300
200
V
I
= 800 V
= 10 A
= 18/−3 V
R
= 4.7 W
= 20 A
= 18/−3 V
DD
Etot
Eon
G
Etot
Eon
200
150
100
I
D
D
V
GS
V
GS
100
0
Eoff
Eoff
50
0
600
650
700
(V)
750
800
1
2
3
4
5
6
7
8
8
10
V
R , GATE RESISTANCE (W)
G
DD
Figure 7. Switching Loss vs. Gate Resistance
Figure 8. Switching Loss vs. Gate Resistance
300
100
18
V
DD
= 400 V
V
V
GS
= −3 V
I
D
= 20 A
15
12
= 800 V
DD
9
6
3
V
= 600 V
DD
T = 175°C
J
10
1
T = 25°C
J
0
T = −55°C
J
−3
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Q , GATE CHARGE (nC)
G
Figure 9. Reverse Drain Current vs. Body
Diode Forward Voltage
Figure 10. Gate−to−Source Voltage vs. Total
Charge
100
10K
1K
C
ISS
25°C
150°C
C
C
OSS
RSS
10
100
10
1
V
= 0 V
GS
f = 1 MHz
1
0.0001
0.001
T
0.01
0.1
1
10
0.1
1
10
100
800
, AVALANCHE TIME (ms)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
AV
Figure 12. Unclamped Inductive Switching
Capability
Figure 11. Capacitance vs. Drain−to−Source
Voltage
www.onsemi.com
5
NTBG040N120M3S
TYPICAL CHARACTERISTICS
1000
60
50
40
30
20
R
= 0.57°C/W
q
JC
T = Max Rated
J
Single Pulse
100
10
1
T
C
= 25°C
V
GS
= 18 V
10 ms
100 ms
1 ms
10 ms
R
= 0.57°C/W
q
JC
R
Limit
0.1
DS(on)
10
0
Thermal Limit
Package Limit
100 ms/DC
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 14. Safe Operating Area
Figure 13. Maximum Continuous Drain
Current vs. Case Temperature
20K
10K
R
= 0.57°C/W
q
JC
Single Pulse
= 25°C
T
C
1K
100
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE WIDTH (sec)
Figure 15. Single Pulse Maximum Power
Dissipation
2
1
50% Duty Cycle
20%
0.1
10%
5%
2%
1%
P
DM
Notes:
= 0.57°C/W
0.01
Single Pulse
R
q
JC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
q
JC C
t
1
J
DM
1
2
t
2
0.001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
Figure 16. Junction−to−Case Transient Thermal Response
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D2PAK7 (TO−263−7L HV)
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明