NTBG028N170M1 [ONSEMI]
Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L;
| 型号： | NTBG028N170M1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L |
| 文件： | 总8页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
28ꢀmohm, 1700ꢀV, M1,
D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1700 V
40 mW @ 20 V
71 A
Drain
(TAB)
NTBG028N170M1
Gate
(Pin 1)
Features
• Typ. R
= 28 mW
DS(on)
Driver
Source
(Pin 2)
• Ultra Low Gate Charge (typ. Q
= 222 nC)
Power Source
(Pin 3, 4, 5, 6, 7)
G(tot)
• Low Effective Output Capacitance (typ. C = 200 pF)
• 100% Avalanche Tested
• RoHS Compliant
oss
N−CHANNEL MOSFET
Typical Applications
• UPS
• DC−DC Converter
• Boost Converter
D2PAK−7L
CASE 418BJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
1700
Unit
V
MARKING DIAGRAM
V
DSS
Gate−to−Source Voltage
V
−15/+25
−5/+20
V
GS
AYWWZZ
BG028N
170M1
Recommended Operation Val-
ues of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
V
C
Continuous Drain
Current (Note 2)
Steady
State
T
I
71
428
53
A
W
A
C
D
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Lot Traceability
Power Dissipation
(Note 2)
P
D
Continuous Drain
Current (Note 2)
Steady
State
T
C
= 100°C
I
D
BG028N170M1 = Specific Device Code
Power Dissipation
(Note 2)
P
214
195
W
A
D
ORDERING INFORMATION
Pulsed Drain Current
(Note 3)
T = 25°C
A
I
DM
†
Device
Package
Shipping
NTBG028N170M1
D2PAK−7L
800 ea/
Tape&Reel
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Source Current (Body Diode)
I
99
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
450
mJ
Energy (I
= 30 A, L = 1 mH) (Note 4)
L(pk)
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive rating, limited by max junction temperature.
4. EAS of 450 mJ is based on starting T = 25°C; L = 1 mH, I = 30 A,
J
AS
V
DD
= 120 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
January, 2023 − Rev. 1
NTBG028N170M1/D
NTBG028N170M1
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Typ
Max
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Notes 1, 2)
R
0.35
°C/W
q
JC
JA
R
40
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
1700
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 1 mA, referenced to 25°C
D
0.44
V/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
= 1700 V
T = 25°C
100
1
mA
mA
mA
DSS
GS
J
V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
GS
= +25/−15 V, V = 0 V
1
GSS
DS
V
R
V
= V , I = 20 mA
1.8
−5
3.0
4.3
+20
40
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
= 20 V, I = 60 A, T = 25°C
28
57
27
mW
DS(on)
GS
D
J
V
= 20 V, I = 60 A, T = 175°C
D J
GS
Forward Transconductance
g
FS
V
= 20 V, I = 60 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
4160
200
15
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
= −5/20 V, V = 800 V,
222
40
nC
G(TOT)
GS
DS
I
D
= 60 A
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
G(TH)
Q
72
GS
GD
Q
53
R
f = 1 MHz
6.1
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
V
= −5/20 V,
= 1200 V,
= 60 A,
47
18
ns
d(ON)
GS
DS
Rise Time
t
r
I
D
R
= 2 W
G
Turn−Off Delay Time
t
121
13
d(OFF)
inductive load
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
1311
683
1994
mJ
ON
E
OFF
E
tot
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
Current
I
V
GS
= −5 V, T = 25°C
99
A
SD
J
Pulsed Drain−Source Diode Forward
Current (Note 3)
I
195
SDM
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= −5 V, I = 60 A, T = 25°C
4.3
33
V
SD
SD
J
t
V
GS
= −5/20 V, I = 60 A,
ns
nC
RR
SD
dI /dt = 1000 A/ms
S
Q
247
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTBG028N170M1
TYPICAL CHARACTERISTICS
250
200
150
100
4
14 V
V
GS
= 10 V
V
GS
= 20 V
16 V
3
2
18 V
16 V
18 V
14 V
20 V
1
0
50
0
10 V
0
2
4
6
8
10
12
0
8
0
50
100
I , DRAIN CURRENT (A)
150
200
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
160
120
80
2.5
2.0
I
= 60 A
D
I
V
= 60 A
= 20 V
D
GS
1.5
T = 150°C
J
1.0
0.5
40
0
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
11
14
17
20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance Variation
with Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
120
300
100
V
= 20 V
T = 175°C
J
T = −55°C
DS
J
90
T = 25°C
J
10
60
T = 25°C
T = 175°C
J
J
1
30
0
V
= −5 V
T = −55°C
J
GS
0.1
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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3
NTBG028N170M1
TYPICAL CHARACTERISTICS
2.5
2.0
1.5
1.0
3.0
T = 25°C
DD
T = 25°C
DD
J
V
J
V
E
TOTAL
= 1200 V
= 1200 V
2.5
2.0
1.5
1.0
R
= 2 W
R
= 2 W
G(EXT)
E
G(EXT)
TOTAL
V
GS
= −5 V/+20 V
V
GS
= −5 V/+20 V
L
Stray
= 30 nH
L
Stray
= 30 nH
FWD: NDSH25170A
FWD: NDSH25170A
E
ON
E
ON
E
OFF
E
OFF
0.5
0
0.5
0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
90
I , DRAIN−TO−SOURCE CURRENT (A)
D
I , DRAIN−TO−SOURCE CURRENT (A)
D
Figure 7. SW Loss vs. ID 255C
Figure 8. SW Loss vs. ID 1255C
3.5
T = 25°C, V = 1200 V
J
DD
E
TOTAL
I
= 60 A, V = −5 V/+20 V
DS
GS
3.0
2.5
2.0
L
Stray
= 30 nH
FWD: NDSH25170A
E
ON
1.5
1.0
E
OFF
0.5
0
0
2
4
6
8
10
12
R
, EXTERNAL GATE RESISTANCE (W)
G(EXT)
Figure 9. SW Loss vs. Rg
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4
NTBG028N170M1
TYPICAL CHARACTERISTICS
20
15
10
5
10K
V
DD
= 400 V
C
iss
V
= 800 V
DD
V
DD
= 600 V
1K
C
oss
100
C
rss
10
1
0
f = 1 MHz
= 0 V
I
= 60 A
V
GS
D
−5
0
50
100
150
200
250
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100
800
175
1
Q , GATE CHARGE (nC)
V
g
Figure 10. Gate−to−Source Voltage vs. Total
Charge
Figure 11. Capacitance vs. Drain−to−Source
Voltage
80
70
60
50
40
30
20
100
V
= 20 V
GS
T = 25°C
J
10
R
= 0.35°C/W
10
0
q
JC
1
0.001
0.01
t
0.1
1
10
100
25
50
75
100
125
150
, TIME IN AVALANCHE (mS)
T , CASE TEMPERATURE (°C)
AV
C
Figure 12. Unclamped Inductive Switching
Capability
Figure 13. Maximum Continuous Drain
Current vs. Case Temperature
1000
100
10
100K
10K
Curve Bent to
Measured Data
Single Pulse
R
T
= 0.35°C/W
q
JC
= 25°C
This Area is
Limited by R
C
DS(on)
1 ms
T
= 25°C
Single Pulse
T = Max Rated
C
10 ms
J
1K
100 ms
R
= 0.35°C/W
q
JC
1
R
Limit
DS(on)
1 ms
10 ms/
DC
Thermal Limit
Package Limit
100
0.1
0.1
1
10
100
1000 5000
0.000001 0.00001 0.0001
0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 14. Maximum Rated Forward Biased
Safe Operating Area
Figure 15. Single Pulse Maximum Power
Dissipation
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5
NTBG028N170M1
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
20%
10%
5%
2%
0.01
1%
Notes:
(t) = r(t) x R
P
DM
Single Pulse
Z
q
q
JC
JC
R
= 0.35°C/W
0.001
q
JC
Peak T = P
x Z (t) + T
q
JC C
t
1
J
DM
Duty Cycle, D = t / t
t
2
1
2
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 16. Transient Thermal Impedance
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D2PAK7 (TO−263−7L HV)
PAGE 1 OF 1
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