NTB5605PT4 [ONSEMI]
Power MOSFET; 功率MOSFET型号: | NTB5605PT4 |
厂家: | ONSEMI |
描述: | Power MOSFET |
文件: | 总8页 (文件大小:65K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTB5605P
Power MOSFET
−60 V, −18.5 A, P−Channel, D2PAK
Features
• Designed for Low R
DS(on)
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• Withstands High Energy in Avalanche and Commutation Modes
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
Applications
• Power Supplies
• PWM Motor Control
• Converters
−60 V
120 mW @ −5.0 V
−18.5 A
P−Channel
• Power Management
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol Value
Unit
V
G
V
DSS
−60
$20
−18.5
Gate−to−Source Voltage
V
GS
V
S
Continuous Drain
Current (Note 1)
Steady
State
T = 25°C
A
I
D
A
4
Power Dissipation
(Note 1)
Steady
State
T = 25°C
A
P
D
88
W
2
D PAK
CASE 418B
STYLE 2
Pulsed Drain Current
t = 10 ms
p
I
−55
A
2
1
DM
Operating Junction and Storage Temperature
T ,
−55 to
175
°C
3
J
T
STG
Single Pulse Drain−to−Source Avalanche
E
AS
338
mJ
MARKING DIAGRAM
& PIN ASSIGNMENT
Energy (V = 25 V, V = 5.0 V, I = 15 A,
DD
GS
PK
L = 3.0 mH, R = 25 W)
G
Drain
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
NTB5605P
YWW
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Case (Drain) – Steady State
R
1.7
°C/W
q
JC
Drain
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Gate
Source
NTB5605P = Device Code
Y
WW
= Year
= Work Week
2
1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in ).
2. When surface mounted to an FR4 board using the minimum recommended
2
pad size (Cu Area 0.41 in ).
ORDERING INFORMATION
†
Device
NTB5605P
NTB5605PT4
Package
Shipping
2
D PAK
50 Units/Rail
2
D PAK
800/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
August, 2004 − Rev. 1
NTB5605P/D
NTB5605P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−60
V
(Br)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
−64
mV/°C
(Br)DSS
Zero Gate Voltage Drain Current
I
V
= 0 V
T = 25°C
−1.0
−10
mA
DSS
GS
J
V
DS
= −60 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
GS(th)
V
GS
= V , I = −250 mA
−1.0
−1.5
−2.0
140
V
DS
D
Drain−to−Source On Resistance
R
V
GS
= −5.0 V, I = −8.5 A
120
140
mW
DS(on)
D
V
= −5.0 V, I = −17 A
GS
DS
GS
D
Forward Transconductance
Drain−to−Source On Voltage
g
V
= −10 V, I = −8.5 A
12
S
V
FS
D
V
DS(on)
V
= −5.0 V, I = −8.5 A
−1.3
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
C
730
211
67
1190
300
120
22
iss
V
GS
= 0 V, f = 1.0 MHz,
Output Capacitance
pF
nC
oss
V
DS
= −25 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
13
G(TOT)
V
= −5.0 V, V = −48 V,
DS
GS
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Q
4.0
7.0
GS
I
D
= −17 A
Q
GD
t
12.5
122
29
25
183
58
d(on)
Rise Time
t
r
V
GS
= −5.0 V, V = −30 V,
DD
ns
V
I
D
= −17 A, R = 9.1 W
G
Turn−Off Delay Time
t
d(off)
Fall Time
t
75
150
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
J
−1.55
−1.4
60
−2.5
V
= 0 V
GS
I
= −17 A
T = 125°C
J
S
Reverse Recovery Time
Charge Time
t
rr
t
39
ns
a
V
GS
= 0 V, dI /dt = 100 A/ms,
S
I
S
= −17 A
Discharge Time
t
b
21
Reverse Recovery Charge
Q
0.14
nC
RR
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTB5605P
40
35
30
25
20
15
10
40
V
= −10 V
= −9 V
= −8 V
= −7 V
GS
V
= −10 V
DS
T = −55°C
J
V
= −6 V
GS
V
V
V
GS
GS
V
V
= −5.5 V
GS
T = 25°C
30
20
10
0
J
GS
T = 125°C
J
T = 25°C
J
V
GS
= −5 V
= −4.5 V
GS
V
GS
= −4 V
V
= −3.5 V
GS
5
0
V
GS
= −3 V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.5
0.45
0.4
0.25
T = 25°C
J
V
GS
= −5.0 V
0.225
0.2
0.35
0.3
0.175
0.15
0.125
0.1
V
= −5.0 V
= −10 V
GS
T = 125°C
J
0.25
0.2
T = 25°C
J
V
GS
0.15
0.1
0.075
0.05
T = −55°C
0.025
0
0.05
0
J
0
5
10
15
20
25
30
0
3
6
9
12
15
18
21
24
−I , DRAIN CURRENT (AMPS)
D
−I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1000
100
2
V
GS
= 0 V
I
V
= −8.5 A
D
1.8
1.6
1.4
1.2
1
= −5.0 V
GS
T = 150°C
J
T = 125°C
J
0.8
0.6
0.4
0.2
0
10
1
−50 −25
0
25
50
75
100 125
150
5
10 15 20 25 30 35 40 45 50 55 60
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTB5605P
8
60
45
30
15
0
2400
2200
2000
1800
1600
1400
1200
1000
800
V
= 0 V
V
= 0 V
T = 25°C
DS
GS
J
7
6
5
4
3
2
1
0
C
V
DS
iss
Q
T
C
V
rss
GS
C
C
Q
Q
iss
DS
GS
600
400
200
0
I
= −17 A
oss
D
C
rss
T = 25°C
J
−V
GS
−V
DS
10
5
0
5
10
15
20
25
0
4
8
12
16
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
20
15
10
5
V
GS
= 0 V
T = 25°C
J
t
t
r
100
10
1
f
t
d(off)
t
d(on)
V
= −30 V
= −17 A
= −5.0 V
DD
I
D
V
GS
0
1
10
R , GATE RESISTANCE (Ω)
100
0
0.25
0.5
0.75
1
1.25
1.5
1.75
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
400
350
300
250
200
150
100
50
V
= −20 V
I
D
= −15 A
GS
SINGLE PULSE
= 25°C
T
C
100
10
dc
10 ms
1 ms
100 µs
1
R
Limit
DS(on)
10 µs
Thermal Limit
Package Limit
0.1
0.1
0
1
10
100
25
50
75
100
125
150
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTB5605P
1
D = 0.5
0.2
0.1
0.05
0.01
SINGLE PULSE
0.1
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
di/dt
I
S
t
rr
t
a
t
b
TIME
0.25 I
t
p
S
I
S
Figure 14. Diode Reverse Recovery Waveform
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5
NTB5605P
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE H
C
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
A
S
1
2
3
4.83
0.89
1.40
8.89
−T−
SEATING
PLANE
K
2.54 BSC
W
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
J
G
K
L
H
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
D 3 PL
M
N
P
R
S
V
M
M
0.13 (0.005)
T
B
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
VARIABLE
CONFIGURATION
ZONE
N
P
STYLE 2:
PIN 1. GATE
R
U
2. DRAIN
3. SOURCE
4. DRAIN
L
L
L
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT
8.38
0.33
10.66
0.42
1.016
0.04
6.096
0.24
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
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6
NTB5605P
Notes
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7
NTB5605P
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NTB5605P/D
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NTB5605T4G
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