NTB5860NL [ONSEMI]
N-Channel Power MOSFET; N沟道功率MOSFET
| 型号： | NTB5860NL |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET |
| 文件： | 总7页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTB5860NL, NTP5860NL,
NVB5860NL
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
http://onsemi.com
• Low R
DS(on)
• High Current Capability
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
3.0 mW @ 10 V
3.6 mW @ 4.5 V
60 V
220 A
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
D
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Symbol
Value
60
Unit
V
G
V
DSS
V
GS
$20
220
156
283
V
S
N−CHANNEL MOSFET
Continuous Drain
Current, R
Steady
State
T = 25°C
I
D
A
A
q
JC
T = 100°C
A
4
Power Dissipation,
R
Steady
State
T = 25°C
A
P
D
W
q
JC
4
Pulsed Drain Current
t = 10 ms
I
660
130
A
A
p
DM
1
2
Current Limited by Package
I
DMmax
3
Operating and Storage Temperature Range
T , T
J
−55 to
+175
°C
stg
2
TO−220AB
CASE 221A
STYLE 5
D PAK
CASE 418B
STYLE 2
1
Source Current (Body Diode)
I
S
130
735
A
2
3
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
E
mJ
AS
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
T
260
°C
L
4
4
Drain
Drain
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
0.53
28
Unit
NTB
5860NLG
AYWW
Junction−to−Case (Drain) Steady State
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JC
NTP
5860NLG
AYWW
R
q
JA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
2
1
Gate
3
1
Gate
3
Drain
Source
Source
2
(Cu Area 1.127 sq in [2 oz] including traces).
Drain
G
A
Y
= Pb−Free Device
= Assembly Location
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
Augsut, 2012 − Rev. 1
NTB5860NL/D
NTB5860NL, NTP5860NL, NVB5860NL
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified)
J
Characteristics
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
DS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
6.1
mV/°C
(BR)DSS
I
D
= 250 mA
Zero Gate Voltage Drain Current
I
V
DS
= 0 V
T = 25°C
1.0
100
mA
DSS
GS
J
V
= 60 V
V
= 0 V
= 60 V
T = 125°C
J
GS
DS
V
Gate−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V = $20 V
$100
nA
GSS
DS
GS
V
GS(th)
V
= V , I = 250 mA
1.0
3.0
V
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On−Resistance
V
/T
−7.7
2.4
2.8
47
mV/°C
mW
GS(th)
J
R
V
= 10 V, I = 20 A
3.0
3.6
DS(on)
GS
D
V
GS
= 4.5 V, I = 20 A
D
Forward Transconductance
g
FS
V
= 15 V, I = 30 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
13216
1127
752
220
13
pF
iss
V
= 25 V, V = 0 V,
DS
GS
Output Capacitance
Transfer Capacitance
Total Gate Charge
C
oss
f = 1 MHz
C
rss
Q
nC
ns
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
GS
= 10 V, V = 48 V,
DS
I
D
= 40 A
Q
37
GS
GD
Q
54
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
25
58
d(on)
t
r
V
D
= 10 V, V = 48 V,
DD
GS
I
= 100 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
98
d(off)
t
144
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.76
0.60
50
1.1
V
dc
SD
J
V
S
= 0 V
GS
I
= 40 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
rr
t
25
a
V
= 0 V, I = 100 A,
S
dI /dt = 20 A/ms
GS
S
Discharge Time
t
25
b
Reverse Recovery Stored Charge
Q
71
nC
RR
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTB5860NL, NTP5860NL, NVB5860NL
TYPICAL CHARACTERISTICS
280
240
200
160
120
80
280
V
10 V
=
V
4.4 V
= 4 V
GS
GS
T = 25°C
V
DS
≥ 10 V
J
240
200
160
120
80
3.8 V
3.6 V
3.4 V
3.2 V
T = 25°C
J
40
40
0
T = 125°C
J
T = −55°C
J
0
0
1
2
3
4
5
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.008
0.006
0.004
0.002
0.000
0.0035
0.0030
0.0025
0.0020
I
= 20 A
D
T = 25°C
J
T = 25°C
J
V
= 4.5 V
= 10 V
GS
V
GS
2
4
6
8
10
10
30
50
70
90
110
130
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
100000
10000
1000
2.0
I
= 20 A
= 10 V
V
GS
= 0 V
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
T = 150°C
J
T = 125°C
J
−50 −25
0
25
50
75
100 125 150 175
10
20
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTB5860NL, NTP5860NL, NVB5860NL
TYPICAL CHARACTERISTICS
10
16000
14000
12000
10000
8000
V
= 0 V
Q
T
GS
C
iss
T = 25°C
J
8
6
4
Q
Q
gs
gd
6000
4000
2
0
V
= 48 V
= 40 A
DS
C
oss
2000
0
I
D
C
T = 25°C
J
rss
0
10
20
30
40
0
50
100
150
200
250
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
10
180
160
140
120
100
80
V
= 48 V
= 40 A
= 10 V
V
= 0 V
DD
GS
I
D
T = 25°C
J
V
GS
t
f
t
d(off)
t
r
60
40
t
d(on)
20
0
1
10
R , GATE RESISTANCE (W)
100
0.60
0.70
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.80
0.90
1.00
1.10
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1 ms
10 ms
dc
10 ms
100 ms
100
10
1
V
= 10 V
GS
SINGLE PULSE
= 25°C
T
C
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTB5860NL, NTP5860NL, NVB5860NL
TYPICAL CHARACTERISTICS
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
Device
†
Package
Shipping
NTP5860NLG
TO−220AB
(Pb−Free)
50 Units / Rail
800 / Tape & Reel
800 / Tape & Reel
2
NTB5860NLT4G
NVB5860NLT4G*
D PAK
(Pb−Free)
2
D PAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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5
NTB5860NL, NTP5860NL, NVB5860NL
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
C
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
8.64
MAX
9.65
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
A
9.65 10.29
S
1
2
3
4.06
0.51
1.14
7.87
4.83
0.89
1.40
8.89
−T−
SEATING
PLANE
K
2.54 BSC
W
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
2.79
0.64
2.79
1.83
8.13
J
G
K
H
L
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
D 3 PL
M
N
P
R
S
V
5.00 REF
2.00 REF
0.99 REF
M
M
B
0.13 (0.005)
T
VARIABLE
CONFIGURATION
ZONE
STYLE 2:
PIN 1. GATE
2. DRAIN
N
P
R
U
3. SOURCE
4. DRAIN
L
L
L
M
M
M
F
F
F
VIEW W−W
VIEW W−W
VIEW W−W
1
2
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTB5860NL, NTP5860NL, NVB5860NL
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 421 33 790 2910
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Order Literature: http://www.onsemi.com/orderlit
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For additional information, please contact your local
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NTB5860NL/D
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