NTB5605PT4G [ONSEMI]
Power MOSFET -60 Volt, -18.5 Amp; 功率MOSFET -60伏， -18.5放大器
| 型号： | NTB5605PT4G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET -60 Volt, -18.5 Amp |
| 文件： | 总7页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTB5605P
Power MOSFET
−60 Volt, −18.5 Amp
P−Channel, D2PAK
http://onsemi.com
Features
• Designed for Low R
DS(on)
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
• Withstands High Energy in Avalanche and Commutation Modes
• Pb−Free Packages are Available
−60 V
120 mW @ −5.0 V
−18.5 A
Applications
P−Channel
• Power Supplies
• PWM Motor Control
• Converters
D
• Power Management
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S
Parameter
Drain−to−Source Voltage
Symbol Value
Unit
V
MARKING DIAGRAM
& PIN ASSIGNMENT
V
−60
$20
−18.5
DSS
Gate−to−Source Voltage
V
V
GS
Continuous Drain
Current (Note 1)
Steady
State
T = 25°C
A
I
A
D
4
Drain
4
Power Dissipation
(Note 1)
Steady
State
T = 25°C
P
88
W
A
D
1
2
3
NTB5605PG
AYWW
Pulsed Drain Current
t = 10 ms
p
I
−55
A
DM
Operating Junction and Storage Temperature
T ,
−55 to
175
°C
J
2
D PAK
CASE 418B
STYLE 2
T
STG
1
2
3
Single Pulse Drain−to−Source Avalanche
E
338
mJ
AS
Gate Drain Source
Energy (V = 25 V, V = 5.0 V, I = 15 A,
DD
GS
PK
L = 3.0 mH, R = 25 W)
G
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
T
260
°C
L
NTB5605P = Device Code
A
= Assembly Location
Y
WW
G
= Year
= Work Week
= Pb−Free Package
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Case (Drain) – Steady State
R
q
JC
1.7
°C/W
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†
Device
Package
Shipping
2
NTB5605P
D PAK
50 Units/Rail
50 Units/Rail
2
2
1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in ).
NTB5605PG
D PAK
2. When surface mounted to an FR4 board using the minimum recommended
(Pb−Free)
2
pad size (Cu Area 0.41 in ).
2
NTB5605PT4
D PAK
800 Tape & Reel
800 Tape & Reel
2
NTB5605PT4G
D PAK
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 2
NTB5605P/D
NTB5605P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = −250 mA
−60
V
(Br)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
(Br)DSS
−64
mV/°C
J
Zero Gate Voltage Drain Current
I
V
= 0 V
T = 25°C
−1.0
−10
mA
DSS
GS
J
V
= −60 V
T = 125°C
J
DS
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
V
= V , I = −250 mA
−1.0
−1.5
−2.0
140
V
GS(th)
GS
DS
D
Drain−to−Source On Resistance
R
DS(on)
V
= −5.0 V, I = −8.5 A
120
140
mW
GS
D
V
= −5.0 V, I = −17 A
GS
DS
GS
D
Forward Transconductance
Drain−to−Source On Voltage
g
V
= −10 V, I = −8.5 A
12
S
V
FS
D
V
V
= −5.0 V, I = −8.5 A
−1.3
DS(on)
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
C
730
211
67
1190
300
120
22
iss
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
pF
nC
oss
V
= −25 V
DS
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
13
G(TOT)
V
= −5.0 V, V = −48 V,
DS
GS
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Q
4.0
7.0
GS
I
= −17 A
D
Q
GD
t
12.5
122
29
25
183
58
d(on)
Rise Time
t
r
V
= −5.0 V, V = −30 V,
DD
GS
ns
V
I
= −17 A, R = 9.1 W
D
G
Turn−Off Delay Time
t
d(off)
Fall Time
t
75
150
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
J
−1.55
−1.4
60
−2.5
SD
V
= 0 V
GS
I
= −17 A
T = 125°C
J
S
Reverse Recovery Time
Charge Time
t
rr
t
39
ns
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
= −17 A
S
Discharge Time
t
21
b
Reverse Recovery Charge
Q
0.14
nC
RR
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTB5605P
40
35
30
25
20
15
10
40
V
= −10 V
= −9 V
= −8 V
= −7 V
GS
V
= −10 V
DS
T = −55°C
J
V
= −6 V
GS
V
V
V
GS
GS
V
V
= −5.5 V
GS
T = 25°C
30
20
J
GS
T = 125°C
J
T = 25°C
J
V
= −5 V
GS
= −4.5 V
GS
V
= −4 V
GS
10
0
V
= −3.5 V
GS
5
0
V
= −3 V
GS
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.5
0.45
0.4
0.25
T = 25°C
J
V
= −5.0 V
GS
0.225
0.2
0.35
0.3
0.175
0.15
V
= −5.0 V
= −10 V
GS
T = 125°C
J
0.25
0.2
0.125
0.1
T = 25°C
J
V
0.15
0.1
0.075
GS
0.05
0.025
0
T = −55°C
J
0.05
0
0
5
10
15
20
25
30
0
3
6
9
12
15
18
21
24
−I , DRAIN CURRENT (AMPS)
D
−I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1000
100
2
V
= 0 V
GS
I
V
= −8.5 A
D
1.8
1.6
1.4
1.2
1
= −5.0 V
GS
T = 150°C
J
T = 125°C
J
0.8
0.6
0.4
0.2
0
10
1
−50 −25
0
25
50
75
100 125
150
5
10 15 20 25 30 35 40 45 50 55 60
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTB5605P
8
60
45
30
15
0
2400
2200
2000
1800
1600
1400
1200
1000
800
V
= 0 V
V
= 0 V
GS
T = 25°C
DS
J
7
6
5
4
3
2
1
0
C
iss
V
DS
Q
T
C
rss
V
GS
C
C
Q
Q
iss
DS
GS
600
400
200
0
I
= −17 A
oss
D
C
rss
T = 25°C
J
−V
GS
−V
DS
10
5
0
5
10
15
20
25
0
4
8
12
16
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
20
15
10
5
V
= 0 V
GS
T = 25°C
J
t
t
r
100
10
1
f
t
t
d(off)
d(on)
V
= −30 V
= −17 A
= −5.0 V
DD
GS
I
D
V
0
1
10
R , GATE RESISTANCE (W)
100
0
0.25
0.5
0.75
1
1.25
1.5 1.75
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
400
350
300
250
200
150
100
50
V
= −20 V
I
= −15 A
GS
D
SINGLE PULSE
= 25°C
T
C
100
10
dc
10 ms
1 ms
100 ms
1
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
0.1
0.1
0
1
10
100
25
50
75
100
125
150
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTB5605P
1
D = 0.5
0.2
0.1
0.05
0.01
SINGLE PULSE
0.1
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
di/dt
I
S
t
rr
t
a
t
b
TIME
0.25 I
t
p
S
I
S
Figure 14. Diode Reverse Recovery Waveform
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5
NTB5605P
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
NOTES:
C
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
A
4.83
0.89
1.40
8.89
S
1
2
3
2.54 BSC
−T−
SEATING
PLANE
K
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
W
J
G
K
L
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
H
M
N
P
R
S
V
D 3 PL
M
M
0.13 (0.005)
T B
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
STYLE 2:
PIN 1. GATE
VARIABLE
CONFIGURATION
ZONE
2. DRAIN
3. SOURCE
4. DRAIN
N
P
R
U
L
L
L
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTB5605P
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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NTB5605P/D
相关型号：
NTB5605T4G
18.5A, 60V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3
ONSEMI
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