NLAS3257CMX3TCG [ONSEMI]
Low Voltage SPDT Mux / Demux Analog Switch;
| 型号： | NLAS3257CMX3TCG |
| 厂家： | 
ONSEMI |
| 描述： | Low Voltage SPDT Mux / Demux Analog Switch 光电二极管 |
| 文件： | 总7页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NLAS3157, NLAS3257
Low Voltage SPDT Mux /
Demux Analog Switch
The NLAS3157 Mux / Demux Analog Switch is an advanced high−
speed single−pole double−throw (SPDT) CMOS switch. It can be used
as an analog switch or as a low−delay bus switch. Break−before−make
switching prevents both switches being enabled simultaneously. This
eliminates signal disruption during switching. The control input, S, is
independent of supply voltage line switch in an ultra−small footprint.
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MARKING
DIAGRAMS
Features
ULLGA6
1.0 x 1.0
CASE 613AD
• High Speed: t = 0.25 ns (Max) @ V = 4.5 V
PD
CC
Y
M
• R : 8.5 W Typ @ V = 4.2 V
ON
CC
• C : 7.5 pF Typ @ V = 3.3 V
ON
CC
Y
M
= Specific Device Code
= Date Code
• V Range: 1.65 V to 4.5 V
CC
• Ultra−Small 1 x 1 mm Package
XLLGA6
1.0 x 1.0
CASE 713AD
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
L M
Compliant
Typical Applications
L
M
= Specific Device Code
= Date Code
• Mobile Phones, PDAs, Camera
B1
GND
B0
1
2
3
6
5
4
V
1
2
3
6
5
4
S
S
V
A
FUNCTION TABLE
CC
Input S
Function
B1
A
GND
B0
CC
L
A = B0
A = B1
H
Figure 1. ULLGA6
(NLAS3157)
Figure 2. XLLGA6
(NLAS3257)
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
(Top View)
(Top View)
A
B0
B1
S
Figure 3. Logic Diagram
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
September, 2016 − Rev. 2
NLAS3157/D
NLAS3157, NLAS3257
Table 1. MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
CC
DC Supply Voltage
−0.5 to +5.5
−0.5 to +5.5
V
Control Input Voltage (S Pin)
V
IN
IS
IK
V
Switch Input / Output Voltage (A, BO, B1 Pins)
Control DC Input Diode Current (S Pin)
Switch I/O Port DC Diode Current (A, BO, B1 Pins)
On−State Switch Current
−0.5 to V + 0.5
V
CC
I
V
< GND
−50
mA
mA
mA
mA
mA
mA
°C
IN
I
V
< GND or V > V
CC
50
OK
I/O
I/O
I
O
128
Continuous Current Through VCC or GND
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
150
I
150
CC
I
150
GND
T
STG
−65 to +150
T
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance (Note 1)
260
°C
L
T
150
°C
J
q
407
1.5
°C/W
mW
JA
P
D
Power Dissipation in Still Air at 85°C (Note 1)
Moisture Sensitivity
MSL
Level 1
F
R
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage
Human Body Mode (Note 2)
Machine Mode (Note 3)
>8000
>300
V
Charged Device Mode (Note 4)
>2000
I
Latchup Performance Above V and Below GND at 85°C (Note 5)
100
mA
LATCHUP
CC
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA/ JESD22−A114−A
3. Tested to EIA/ JESD22−A115−A
4. Tested to JESD22−C101−A
5. Tested to EIA / JESD78
Table 2. RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
1.65
0
Max
4.5
Unit
V
V
CC
Positive DC Supply Voltage
Control Input Voltage (S Pin)
V
I
4.5
V
V
Switch Input / Output Voltage (A, BO, B1 Pins)
Operating Free−Air Temperature
0
V
V
IS
CC
T
−40
+85
°C
ns/V
A
Dt / DV
Input Transition Rise or Fall Rate
Control Input
Switch I/O
0
0
5
DC
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NLAS3157, NLAS3257
Table 3. DC ELECTRICAL CHARACTERISTICS (Typical: T = 25°C, V = 3.3 V)
CC
−40°C to +85°C
Min
Typ
Max
Symbol
Parameter
Control Input,
Test Conditions
V
(V)
Unit
CC
V
IH
1.65
2.7
3.3
4.2
0.75
1.25
1.52
1.94
V
HIGH Voltage
V
IL
Control Input,
LOW Voltage
1.65
2.7
3.3
4.2
0.25
0.4
0.4
0.5
V
I
IN
Control Input,
Leakage Current
0 ≤ V ≤ V
CC
1.65 − 4.5
1.0
mA
IS
I
Quiescent Supply Current
NC or NO Leakage Current
V
V
= V or GND; I = 0 A
1.65 − 4.5
4.5
1.0
mA
CC
IS
CC
D
I
I
= 1.65 V to 4.5 V
10
10
100
nA
NC (OFF)
NO (OFF)
IS
I
COM ON Leakage Current
V
IS
= 1.65 V to 4.5 V
4.5
100
nA
COM (ON)
ON RESISTANCE (Typical: T = 255C)
R
Peak On−Resistance
On−Resistance Flatness
Delta On−Resistance
I
V
= 8 mA
= 0 V to V
1.65
2.7
3.3
4.2
15.4
10.8
9.5
23.2
12.4
11.0
9.9
W
ON
ON
IS
CC
CC
CC
8.5
R
I
= 8 mA
= 0 V to V
1.65
2.7
3.3
4.2
5.5
2.9
2.7
2.8
10.2
3.3
3.3
3.3
W
W
FLAT
ON
V
IS
DR
I
= 8 mA
= 0 V to V
1.65
2.7
3.3
4.2
0.3
0.3
0.3
0.3
0.35
0.35
0.35
0.35
ON
ON
V
IS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. AC ELECTRICAL CHARACTERISTICS
−405C to +855C
Min
Typ
Max
Symbol
Parameter
Test Conditions
V
CC
(V)
Unit
TIMING/FREQUENCY (Typical: T = 255C, V = 3.3 V, R = 50 W, C = 35 pF, f = 1 MHz)
CC
L
L
t
Propagation Delay, A to (See Figures 4 and 5)
Bn or Bn to A
1.65 − 4.5
0.25
ns
PD
t
Turn−ON Time
Turn−OFF Time
(See Figures 7 and 8)
(See Figures 7 and 8)
(See Figure 6)
1.65 − 4.5
1.65 − 4.5
1.65 − 4.5
3.1
3.4
2.0
13.0
12.0
30.0
25.0
ns
ns
ns
ON
t
OFF
T
BBM
Break−Before−Make
Time
BW
−3 dB Bandwidth
C = 5 pF
L
1.65 − 4.5
1000
MHz
ISOLATION (Typical: T = 255C, V = 3.3 V, R = 50 W, C = 5 pF)
CC
L
L
O
OFF−Isolation
f = 240 MHz (See Figure 9)
1.65 − 4.5
1.65 − 4.5
-21
-21
dB
dB
IRR
X
TALK
Non−Adjacent Channel
Crosstalk
f = 240 MHz
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3
NLAS3157, NLAS3257
Table 4. AC ELECTRICAL CHARACTERISTICS
CAPACITANCE (Typical: T = 255C)
C
Control Pin
V
CC
V
CC
V
CC
V
CC
V
CC
= 0 V, f = 1 MHz
1.5
1.0
7.5
6.5
3.8
pF
IN
Input Capacitance
= 0 V, f = 10 MHz
C
ON Capacitance
OFF Capacitance
= 3.3 V; OE = 0 V, S = 0 V or 3.3 V, f = 1 MHz
= 3.3 V; OE = 0 V, S = 0 V or 3.3 V, f = 10 MHz
ON
C
= V = 3.3 V; OE = 0 V,
IS
OFF
S = 3.3 V or 0 V, f = 1 MHz
V
CC
= V = 3.3 V; OE = 0 V,
2.0
IS
S = 3.3 V or 0 V, f = 10 MHz
V
CC
Input A
50%
50%
GND
t
PLH
t
PHL
V
V
OH
Output Y
50% V
CC
OL
Figure 4. Propagation Delay Waveforms
V
CC
PULSE
GENERATOR
DUT
R
T
C
R
L
L
R = Z
of pulse generator (typically 50 W)
T
OUT
Figure 5. Propagation Delay Test Circuit
Figure 6. tBBM (Time Break−Before−Make)
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4
NLAS3157, NLAS3257
Figure 7. tON / tOFF
Figure 8. tON / tOFF
Figure 9. Off Channel Isolation / On Channel Loss (BW)/Crosstalk (On Channel to Off Channel) / VONL
ORDERING INFORMATION
†
Device
NLAS3157MX3TCG
Package
Shipping
ULLGA6 − 1.0 x 1.0, 0.35P
(Pb−Free)
3000 / Tape & Reel
NLAS3257CMX3TCG
XLLGA6 − 1.0 x 1.0, 0.35P
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NLAS3157, NLAS3257
PACKAGE DIMENSIONS
ULLGA6 1.0x1.0, 0.35P
CASE 613AD
ISSUE A
NOTES:
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM THE TERMINAL TIP.
4. A MAXIMUM OF 0.05 PULL BACK OF THE
PLATED TERMINAL FROM THE EDGE OF THE
PACKAGE IS ALLOWED.
PIN ONE
REFERENCE
E
MILLIMETERS
DIM MIN
−−−
A1 0.00
MAX
0.40
0.05
0.22
0.10
C
A
TOP VIEW
SIDE VIEW
b
D
E
e
0.12
1.00 BSC
1.00 BSC
0.35 BSC
0.10
C
0.05
0.05
C
C
L
0.25
0.35
0.40
L1 0.30
A
SEATING
6X
PLANE
MOUNTING FOOTPRINT
SOLDERMASK DEFINED*
C
A1
5X
6X
0.48
0.22
e
NOTE 4
5X L
3
1
L1
1.18
1
0.35
0.53
6
4
PKG
PITCH
6X b
OUTLINE
0.10
0.05
C
C
A B
DIMENSIONS: MILLIMETERS
NOTE 3
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
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6
NLAS3157, NLAS3257
PACKAGE DIMENSIONS
XLLGA6 1.0x1.0, 0.35P
CASE 713AD
ISSUE O
NOTES:
A B
D
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994 .
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO THE PLATED TERMINALS
AND IS MEASURED BETWEEN 0.15 AND 0.25 MM
FROM THE TERMINAL TIPS.
PIN ONE
REFERENCE
E
4. COPLANARITY APPLIES TO ALL OF THE TERMINALS.
MILLIMETERS
2X
0.05
C
DIM MIN
MAX
0.40
0.05
0.23
A
A1
b
−−−
0.00
0.17
0.05
C
2X
TOP VIEW
D
1.00 BSC
E
e
e2
L
1.00 BSC
0.35 BSC
0.60 BSC
0.05
C
A
0.27
0.33
L1
0.05 REF
0.05 C
A1
SIDE VIEW
SEATING
PLANE
RECOMMENDED
SOLDERING FOOTPRINT*
C
NOTE 4
0.35
PITCH
5X
0.50
L1
e
6X
L
1
2
3
PACKAGE
OUTLINE
1.25
1
e2
6X
0.22
6
0.55
5
4
6X
b
DIMENSIONS: MILLIMETERS
M
0.07
C
C
A
B
M
0.05
NOTE 3
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
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NLAS3157/D
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