NLAS3699 [ONSEMI]
Dual DPDT Ultra-Low RON Switch; 双DPDT超低RON开关
| 型号： | NLAS3699 |
| 厂家： | 
ONSEMI |
| 描述： | Dual DPDT Ultra-Low RON Switch |
| 文件： | 总10页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NLAS3699
Dual DPDT Ultra−Low RON
Switch
The NLAS3699 is a dual independent ultra−low R DPDT analog
ON
switch. This device is designed for low operating voltage, high current
switching of speaker output for cell phone applications. It can switch a
balanced stereo output. The NLAS3699 can handle a balanced
microphone/speaker/ring−tone generator in a monophone mode. The
device contains a break−make feature.
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MARKING
DIAGRAMS
Features
16
• Single Supply Operation
1
QFN−16
1.65 to 4.7 V V
CC
NLAS
3699
ALYW
G
CASE 485AE
Function Directly from LiON Battery
1
• Maximum Breakdown Voltage: 5.0 V
• Tiny 3 x 3 mm QFN Pb−Free Package
Meet JEDEC MO−220 Specifications
• Low Static Power
XXXX = Specific Device Code
A
L
Y
W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
Typical Applications
• Cell Phone Speaker/Microphone Switching
• Ringtone−Chip/Amplifier Switching
• Four Unbalanced (Single−Ended) Switches
• Stereo Balanced (Push−Pull) Switching
D1 1S1 Vcc 4S2
16
15
14
13
Important Information
• ESD Protection:
1
12
1S2
1−2IN
2S1
D4
HBM (Human Body Model) > 4000 V
MM (Machine Model) > 400 V
2
3
4
11
10
9
4S1
• Continuous Current Rating Through each Switch ±300 mA
• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
• Pin for Pin Compatible with STG3699
3−4IN
3S2
D2
5
6
7
8
2S2 GND 3S1 D3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
October, 2004 − Rev. 0
NLAS3699/D
NLAS3699
D
S2
S1
IN
Figure 1. Input Equivalent Circuit
PIN DESCRIPTION
QFN PIN #
Symbol
Name and Function
1, 3, 5, 7, 9, 11, 13, 15
1S1 to 4S1, 1S2 to 4S2
1−2IN, 3−4IN
D1 to D4
Independent Channels
Controls
2, 10
4, 8, 12, 16
Common Channels
Ground (V)
6
GND
14
V
CC
Positive Supply Voltage
TRUTH TABLE
IN
H
L
S1
S2
ON
OFF(*)
ON
OFF(*)
*High impedance.
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2
NLAS3699
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
V
V
Positive DC Supply Voltage
*0.5 to )5.0
CC
IS
Analog Input Voltage (V , V , or V
)
*0.5 v V v V )0.5
V
NO NC
COM
IS
CC
Digital Select Input Voltage
*0.5 v V v)5.0
V
IN
I
I
I
I
Continuous DC Current from COM to NC/NO
Peak Current from COM to NC/NO, 10 duty cycle (Note 1)
Continuous DC Current into COM/NO/NC with respect to V or GND
$300
$500
$100
mA
mA
mA
anl1
anl−pk 1
clmp
CC
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Defined as 10% ON, 90% off duty cycle.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
1.65
GND
GND
*55
Max
Unit
V
V
V
V
DC Supply Voltage
4.7
CC
IN
Digital Select Input Voltage
V
CC
V
CC
V
Analog Input Voltage (NC, NO, COM)
Operating Temperature Range
Input Rise or Fall Time, SELECT
V
IS
T
A
)125
°C
ns/V
t , t
V
CC
V
CC
= 1.6 V − 2.7 V
= 3.0 V − 4.7 V
20
10
r
f
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3
NLAS3699
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Guaranteed Limit
*555C to 255C t855C t1255C
Symbol
Parameter
Condition
V
CC
$10%
Unit
V
IH
Minimum High−Level Input
Voltage, Select Inputs
1.8
2.5
4.7
1.2
1.7
2.8
1.2
1.7
2.8
1.2
1.7
2.8
V
V
IL
Maximum Low−Level Input
Voltage, Select Inputs
1.8
2.5
4.7
0.4
0.5
1.0
0.4
0.5
1.0
0.4
0.5
1.0
V
I
Maximum Input Leakage
Current, Select Inputs
V
V
= 5.0 V or GND
= 5.0 V or GND
4.7
$ 0.1
$ 1.0
$ 1.0
m
A
IN
IN
I
I
Power Off Leakage Current
0
$0.5
$2.0
$2.0
m A
m A
OFF
IN
Maximum Quiescent Supply
Current (Note 2)
Select and V = V or GND
1.65 to 4.7
$ 1.0
$ 2.0
$ 2.5
CC
IS
CC
DC ELECTRICAL CHARACTERISTICS − Analog Section
Guaranteed Maximum Limit
−555C to 255C
t855C
t1255C
Min
Max
Min
Max
Min
Max
Symbol
Parameter
Condition
v V or V w V
IH
V
CC
$10%
Unit
R
NC/NO On−Resistance
(Note 2)
V
V
2.5
3.0
4.7
0.6
0.5
0.5
0.6
0.5
0.5
0.7
0.6
0.5
W
ON
IN
IL
IN
= GND to V
IS
CC
I
IN
I v 100 mA
R
NC/NO On−Resistance
Flatness (Notes 2, 4)
I
= 100 mA
2.5
3.0
4.7
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
W
W
FLAT
COM
V
= 0 to V
IS
CC
D
R
On−Resistance Match
Between Channels
(Notes 2 and 3)
V
= 1.3 V;
= 100 mA
= 1.5 V;
2.5
3.0
4.7
0.06
0.05
0.05
0.06
0.05
0.05
0.06
0.05
0.05
ON
IS
I
COM
V
IS
I
= 100 mA
COM
V
= 2.8 V;
IS
I
= 100 mA
COM
I
I
NC or NO Off Leakage
Current (Note 2)
V
= V or V
IH
4.7
4.7
−5.0
−10
5.0
10
−10
10
−100
100
nA
nA
NC(OFF)
IN
IL
V
V
or V = 0.8 V
NC
= 3.7 V
NO(OFF)
NO
COM
I
COM ON
V
IN
= V or V
IH
−100
100
−1000
1000
COM(ON)
IL
Leakage Current
(Note 2)
V
NO
V
NC
0.8 V or 3.7 V with
floating or
V
NC
V
NO
0.8 V or 3.7 V with
floating
V
COM
= 0.8 V or 3.7 V
2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
3. D R − R between NC1 and NC2 or between NO1 and NO2.
R
ON = ON(MAX)
ON(MIN)
4. Flatness is defined as the difference between the maximum and minimum value of on−resistance as measured over the specified analog
signal ranges.
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4
NLAS3699
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)
r
f
Guaranteed Maximum Limit
*555C to 255C
t855C
t1255C
V
(V)
V
IS
CC
(V) Min Typ* Max Min Max Min Max
Symbol
Parameter
Turn−On Time
Test Conditions
Unit
t
t
t
R = 50 WC, = 35 pF
L
(Figures 3 and 4)
2.3 − 4.7
1.5
50
30
60
40
60
40
ns
ON
L
Turn−Off Time
R = 50 WC = 35 pF
,
L
2.3 − 4.7
3.0
1.5
ns
ns
OFF
BBM
L
(Figures 3 and 4)
V = 3.0
IS
Minimum Break−Before−
Make Time
1.5
2
15
R = 300 WC
,
= 35 pF
L
L
(Figure 2)
Typical @ 25, V = 5.0 V
CC
C
C
C
Control Pin Input Capacitance
SN Port Capacitance
2.5
72
pF
pF
pF
IN
SN
D
D Port Capacitance When Switch is Enabled
230
*Typical Characteristics are at 25°C.
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
255C
V
(V)
CC
Typical
Symbol
Parameter
Condition
centered between V and GND
Unit
BW
Maximum On−Channel −3dB
V
IN
1.65 − 4.7
20
MHz
CC
Bandwidth or Minimum Frequency (Figure 5)
Response (Figure 12)
V
V
Maximum Feed−through On Loss
V
V
= 0 dBm @ 100 kHz to 50 MHz
1.65 − 4.7
1.65 − 4.7
1.65 − 4.7
4.3
−0.06
−62
50
dB
dB
pC
%
ONL
IN
centered between V and GND (Figure 5)
IN
CC
Off−Channel Isolation (Figure 13)
f = 100 kHz; V = 1 V RMS; C = 5 nF
ISO
IS
L
V
IN
centered between V and GND(Figure 5)
CC
Q
Charge Injection Select Input to
Common I/O (Figure 8)
V
V
GND, R = 0 W, C = 1 nF
IN = CC to
IS
L
Q = C − D V
(Figure 6)
L
OUT
THD
VCT
Total Harmonic Distortion THD +
Noise (Figure 7)
F
IS
= 20 Hz to 20 kHz, R = R
= 600 W, C = 50 pF
0.01
−62
L
gen
L
V
IS
= 2 V RMS
Channel−to−Channel Crosstalk
f = 100 kHz; V = 1 V RMS, C = 5 pF, R = 50
W
1.65 − 4.7
dB
IS
L
L
V
IN
centered between V and GND (Figure 5)
CC
5. Off−Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch.
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5
NLAS3699
V
CC
DUT
Input
V
Output
50
CC
GND
V
OUT
0.1 m F
t
BMM
W
35 pF
90%
90% of V
OH
Output
Switch Select Pin
GND
Figure 2. tBBM (Time Break−Before−Make)
V
CC
Input
50%
50%
90%
DUT
0 V
V
CC
Output
50
V
OUT
V
0.1 m F
OH
Open
90%
W
35 pF
Output
V
OL
Input
t
t
OFF
ON
Figure 3. tON/tOFF
V
CC
V
CC
Input
50%
50%
DUT
0 V
50
W
Output
V
OUT
V
OH
Open
35 pF
Output
V
10%
10%
OL
Input
t
t
ON
OFF
Figure 4. tON/tOFF
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6
NLAS3699
50
W
DUT
Reference
Input
50 W Generator
Transmitted
Output
50
W
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is
the bandwidth of an On switch. V , Bandwidth and V are independent of the input signal direction.
ISO
ONL
V
V
OUT
IN
= Off Channel Isolation = 20 Log ǒ Ǔ for V
V
V
at 100 kHz
IN
ISO
V
OUT
= On Channel Loss = 20 Log ǒ Ǔ for V
at 100 kHz to 50 MHz
ONL
IN
V
IN
Bandwidth (BW) = the frequency 3 dB below V
= Use V setup and test to all other switch analog input/outputs terminated with 50
ONL
V
CT
W
ISO
Figure 5. Off Channel Isolation/On Channel Loss (BW)/Crosstalk
(On Channel to Off Channel)/VONL
DUT
V
CC
V
IN
Output
Open
GND
C
L
Output
Off
D V
OUT
Off
On
V
IN
Figure 6. Charge Injection: (Q)
1
5
0
4.7 V
3.0 V
2.5 V
−5
1.65 V
0.1
0.01
−10
−15
−20
−25
−30
4.3 V
0.001
10
100
1000
FREQUENCY (Hz)
10000
100000
0
0.5
1
1.5
2
2.5
(V)
3
3.5
4
4.5
5
V
IN
Figure 7. Total Harmonic Distortion Plus Noise
Versus Frequency
Figure 8. Charge Injection versus Vis
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7
NLAS3699
2
1.2
1.6
1.8 V
125°C
85°C
0.8
0.4
0
25°C
1.2
0.8
0.4
0
−40°C
−55°C
2.5 V
4.5 V
3.6 V
3.0 V
0.0
0.5
1.0
1.5
(V)
2.0
2.5
3.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
V
COM
(V)
IN
Figure 10. RON vs. VIN vs. Temperature
@ VCC = 3.0 V
Figure 9. On−Resistance vs. COM Voltage
0
0.8
−2
−4
125°C
85°C
−6
−8
0.6
0.4
0.2
25°C
−10
−12
−14
−16
−18
−20
−40°C
−55°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1
10
100
1000
V
IN
(V)
FREQUENCY (MHz)
Figure 11. RON vs. VIN vs. Temperature
@ VCC = 4.7 V
Figure 12. Bandwidth vs. Frequency
@ VCC = 1.65 V to 4.7 V
40
30
0
−10
20
−20
−30
−40
−50
−60
−70
10
0
−10
−20
−30
−40
−50
0.1
1
10
100
1000
0.1
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 13. Off−Isolation vs. Frequency
@ VCC = 1.65 V to 4.7 V
Figure 14. Phase Angle vs. Frequency
@ VCC = 1.65 V to 4.7 V
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8
NLAS3699
DEVICE ORDERING INFORMATION
Device Nomenclature
Circuit
Indicator
Device
Function
Package Tape & Reel
Device Order
Number
†
Suffix
Suffix
Technology
Package Type
Tape & Reel Size
QFN
(Pb−Free)
NLAS3699MN1R2G
NL
AS
3699
MN1
R2
2500 Unit / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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9
NLAS3699
PACKAGE DIMENSIONS
QFN−16 (3 x 3 x 0.85 mm)
CASE 485AE−01
ISSUE O
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
B
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. OUTLINE MEETS JEDEC DIMENSIONS PER
MO−220, VARIATION VEED−6.
PIN 1
LOCATION
E
MILLIMETERS
DIM MIN
0.800 0.900 1.000
A1 0.000 0.025 0.050
NOM
MAX
A
0.15
C
TOP VIEW
A3
b
D
0.200 REF
0.180 0.250 0.300
3.00 BSC
0.15
C
D2 1.250
E
1.40 1.550
3.00 BSC
(A3)
E2 1.250
e
1.40 1.550
0.500 BSC
0.10
0.08
C
C
K
L
0.200
−−−
−−−
A
0.300 0.400 0.500
SEATING
PLANE
16 X
SIDE VIEW
A1
C
D2
e
L
16X
EXPOSED PAD
5
8
NOTE 5
4
9
E2
K
16X
12
1
16
13
16X b
0.10
0.05
C
C
A
B
BOTTOM VIEW
NOTE 3
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
NLAS3699/D
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