NLAS3799BMNR2G [ONSEMI]

Dual DPDT Ultra−Low RON Switch; 双DPDT超低RON开关
NLAS3799BMNR2G
型号: NLAS3799BMNR2G
厂家: ONSEMI    ONSEMI
描述:

Dual DPDT Ultra−Low RON Switch
双DPDT超低RON开关

开关 光电二极管
文件: 总11页 (文件大小:100K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NLAS3799B, NLAS3799BL  
Dual DPDT Ultra−Low RON  
Switch  
The NLAS3799B is an ultra−low R dual DPDT and a 0.5 R  
ON  
ON  
analog switch. This device is designed for low operating voltage, high  
current switching of speaker output and earpiece for cellphone  
applications. It can switch a balanced stereo output. The NLAS3799B  
can handle a balanced microphone/speaker/ring−tone generator in a  
monophone mode. The device contains a break−before−make (BBM)  
feature.  
http://onsemi.com  
MARKING  
DIAGRAMS  
16  
Features  
1
Single Supply Operation  
XXM  
G
1
1.65 to 4.5 V V  
CC  
Function Directly from LiON Battery  
Maximum Breakdown Voltage: 5.5 V  
Low Static Power  
NLAS3799B Interfaces with 2.8 V Chipset  
NLAS3799BL Interfaces with 1.8 V Chipset  
These are Pb−Free Devices*  
WQFN−16  
CASE 488AP  
XX  
= Specific Device Code  
AK = NLAS3799B  
AL = NLAS3799BL  
M
G
= Date Code/Aseembly Location  
= Pb−Free Package  
Typical Applications  
Cell Phone Speaker/Microphone Switching  
Ringtone−Chip/Amplifier Switching  
Four Unbalanced (Single−Ended) Switches  
Stereo Balanced (Push−Pull) Switching  
COMA NOA Vcc NCD  
16  
15  
14  
13  
1
12  
NCA  
A−B IN  
NOB  
COMD  
NOD  
Important Information  
2
3
4
11  
10  
9
ESD Protection:  
HBM (Human Body Model) > 8000 V  
MM (Machine Model) > 400 V  
C−D IN  
NCC  
Continuous Current Rating Through each Switch 300 mA  
Conforms to: JEDEC MO−220, Issue H, Variation VEED−6  
Package: 1.8 x 2.6 x 0.75 mm WQFN−16 Pb−Free  
COMB  
5
6
7
8
NCB GND NOCCOMC  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 0  
NLAS3799B/D  
NLAS3799B, NLAS3799BL  
COM  
NC  
NO  
IN  
Figure 1. Input Equivalent Circuit  
PIN DESCRIPTION  
WQFN PIN #  
Symbol  
Name and Function  
1, 3, 5, 7, 9, 11, 13, 15  
NO A−D, NC A−D  
A−B IN, C−D IN  
COM A−D  
Independent Channels  
Controls  
2, 10  
4, 8, 12, 16  
Common Channels  
Ground (V)  
6
GND  
14  
V
Positive Supply Voltage  
CC  
TRUTH TABLE  
IN  
H
L
NO  
ON  
NC  
OFF*  
ON  
OFF*  
*High impedance.  
http://onsemi.com  
2
NLAS3799B, NLAS3799BL  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
V
V
Positive DC Supply Voltage  
−0.5 to +5.5  
CC  
IS  
Analog Input Voltage (V , V , or V  
)
−0.5 v V v V + 0.5  
V
NO  
NC  
COM  
IS  
CC  
Digital Select Input Voltage  
−0.5 v V v +V  
V
IN  
IN  
CC  
I
I
I
Continuous DC Current from COM to NC/NO  
300  
500  
100  
mA  
mA  
mA  
anl1  
anl−pk1  
clmp  
Peak Current from COM to NC/NO, 10 Duty Cycle (Note 1)  
Continuous DC Current into COM/NO/NC with Respect to V or GND  
CC  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. Defined as 10% ON, 90% OFF Duty Cycle.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
1.65  
GND  
GND  
−40  
Max  
Unit  
V
V
V
V
T
DC Supply Voltage  
4.5  
CC  
IN  
Digital Select Input Voltage  
V
V
V
CC  
CC  
Analog Input Voltage (NC, NO, COM)  
Operating Temperature Range  
Input Rise or Fall Time, IN  
V
IS  
+85  
°C  
ns/V  
A
t , t  
r
V
V
= 1.6 V − 2.7 V  
= 3.0 V − 4.5 V  
20  
10  
f
CC  
CC  
http://onsemi.com  
3
 
NLAS3799B, NLAS3799BL  
NLAS3799B DC CHARACTERISTICS − DIGITAL SECTION (Voltages Referenced to GND)  
Guaranteed Limit  
40°C to  
+85°C  
25°C  
Symbol  
Parameter  
Condition  
V
Unit  
CC  
V
Minimum High−Level Input Voltage, Select  
Inputs  
3.0  
4.3  
1.4  
2.0  
1.4  
2.0  
V
IH  
V
Maximum Low−Level Input Voltage, Select  
Inputs  
3.0  
4.3  
0.5  
0.8  
0.5  
0.8  
V
IL  
I
Maximum Input Leakage Current, Select  
Inputs  
V
V
= V or GND  
4.3  
0.1  
1.0  
A
IN  
IN  
IN  
CC  
I
I
Power Off Leakage Current  
= 4.5 V or GND  
0
0.5  
1.0  
2.0  
2.0  
A  
A  
OFF  
CC  
Maximum Quiescent Supply Current  
(Note 2)  
Select and V = V or GND 1.65 to 4.5  
IS CC  
2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.  
NLAS3799B DC ELECTRICAL CHARACTERISTICS − ANALOG SECTION  
Guaranteed Maximum Limit  
25°C −40°C to +85°C  
Min  
Max  
Min  
Max  
Symbol  
Parameter  
NC/NO On−Resistance  
Condition  
= V or V = V  
IH  
V
Unit  
CC  
R
ON  
V
V
3.0  
4.3  
0.5  
0.4  
0.6  
0.5  
IN  
IS  
IL  
IN  
(Note 3)  
= GND to V  
CC  
I
I = 100 mA  
IN  
R
NC/NO On−Resistance Flatness  
(Notes 3 and 4)  
I
V
= 100 mA  
3.0  
4.3  
0.15  
0.15  
0.15  
0.15  
FLAT  
COM  
IS  
= 0 to V  
CC  
R
On−Resistance Match Between Channels  
(Notes 3 and 5)  
V
I
V
= 1.5 V;  
= 100 mA  
= 2.2 V;  
3.0  
4.3  
0.05  
0.05  
0.05  
0.05  
ON  
IS  
COM  
IS  
I
= 100 mA  
COM  
I
I
NC or NO Off Leakage Current (Note 3)  
V
V
V
= V or V  
IH  
4.3  
4.3  
−10  
−10  
10  
10  
−100  
−100  
100  
100  
nA  
nA  
NC(OFF)  
NO(OFF)  
IN  
IL  
or V = 0.3 V  
NO  
COM  
NC  
= 4.0 V  
I
COM ON  
Leakage Current  
(Note 3)  
V
V
V
V
V
V
= V or V  
IL IH  
COM(ON)  
IN  
0.3 V or 4.0 V with  
floating or  
NO  
NC  
NC  
NO  
COM  
0.3 V or 4.0 V with  
floating  
= 0.3 V or 4.0 V  
3. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.  
4. Flatness is defined as the difference between the maximum and minimum value of On−resistance as measured over the specified analog  
signal ranges.  
5. R  
R
− R  
between NCn or NOn.  
ON = ON(MAX)  
ON(MIN)  
http://onsemi.com  
4
 
NLAS3799B, NLAS3799BL  
NLAS3799BL DC CHARACTERISTICS − DIGITAL SECTION (Voltages Referenced to GND)  
Guaranteed Limit  
25°C  
40 to +85°C  
Symbol  
Parameter  
Condition  
V
Unit  
CC  
V
Minimum High−Level Input Voltage, Select  
Inputs  
3.0  
4.3  
1.3  
1.6  
1.3  
1.6  
V
IH  
V
Maximum Low−Level Input Voltage, Select  
Inputs  
3.0  
4.3  
0.5  
0.6  
0.5  
0.6  
V
IL  
I
Maximum Input Leakage Current, Select  
Inputs  
V
V
= V or GND  
4.3  
0.1  
1.0  
A
IN  
IN  
IN  
CC  
I
I
Power Off Leakage Current  
= 4.5 V or GND  
0
0.5  
40  
2.0  
45  
A  
A  
OFF  
CC  
Maximum Quiescent Supply Current  
(Note 6)  
Select and V = V or GND 1.65 to 4.3  
IS CC  
6. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.  
NLAS3799BL DC ELECTRICAL CHARACTERISTICS − ANALOG SECTION  
Guaranteed Maximum Limit  
25°C −40°C to +85°C  
Min  
Max  
Min  
Max  
Symbol  
Parameter  
NC/NO On−Resistance  
Condition  
= V or V = V  
IH  
V
Unit  
CC  
R
ON  
V
V
3.0  
4.3  
0.5  
0.4  
0.6  
0.5  
IN  
IS  
IL  
IN  
(Note 7)  
= GND to V  
CC  
I
I = 100 mA  
IN  
R
NC/NO On−Resistance Flatness  
(Notes 7 and 8)  
I
V
= 100 mA  
3.0  
4.3  
0.15  
0.15  
0.15  
0.15  
FLAT  
COM  
IS  
= 0 to V  
CC  
R
On−Resistance Match Between Channels  
(Notes 7 and 9)  
V
I
V
= 1.5 V;  
= 100 mA  
= 2.2 V;  
3.0  
4.3  
0.05  
0.05  
0.05  
0.05  
ON  
IS  
COM  
IS  
I
= 100 mA  
COM  
I
I
NC or NO Off Leakage Current (Note 7)  
V
V
V
= V or V  
IH  
4.3  
4.3  
−10  
−10  
10  
10  
−100  
−100  
100  
100  
nA  
nA  
NC(OFF)  
NO(OFF)  
IN  
IL  
or V = 0.3 V  
NO  
COM  
NC  
= 4.0 V  
I
COM ON  
Leakage Current  
(Note 7)  
V
V
V
V
V
V
= V or V  
IL IH  
COM(ON)  
IN  
0.3 V or 4.0 V with  
floating or  
NO  
NC  
NC  
NO  
COM  
0.3 V or 4.0 V with  
floating  
= 0.3 V or 4.0 V  
7. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.  
8. Flatness is defined as the difference between the maximum and minimum value of On−resistance as measured over the specified analog  
signal ranges.  
9. R  
R
− R  
between NC1 and NC2 or between NO1 and NO2.  
ON = ON(MAX)  
ON(MIN)  
http://onsemi.com  
5
 
NLAS3799B, NLAS3799BL  
NLAS3799B/NLAS3799BL AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)  
r
f
Guaranteed Maximum Limit  
−40°C to  
+85°C  
25°C  
V
V
IS  
CC  
(V)  
(V) Min Typ* Max Min Max  
Symbol  
Parameter  
Test Conditions  
R = 50 , C = 35 pF  
Unit  
t
t
t
Turn−On Time  
2.3 − 4.3 1.5  
50  
30  
60  
40  
ns  
ON  
L
L
(Figures 3 and 4)  
Turn−Off Time  
R = 50 , C = 35 pF  
2.3 − 4.3 1.5  
ns  
ns  
OFF  
BBM  
L
L
(Figures 3 and 4)  
Minimum Break−Before−Make Time  
V
IS  
= 3.0  
R = 50 , C = 35 pF  
3.0  
1.5  
2
15  
L
L
(Figure 2)  
Typical @ 25, V = 3.6 V  
CC  
C
IN  
C
SN  
C
D
Control Pin Input Capacitance  
SN Port Capacitance  
3.0  
72  
pF  
pF  
pF  
D Port Capacitance When Switch is Enabled  
220  
*Typical Characteristics are at 25°C.  
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)  
25°C  
V
CC  
(V)  
Typical  
Symbol  
Parameter  
Condition  
centered between V and GND  
Unit  
BW  
Maximum On−Channel −3 dB  
Bandwidth or Minimum  
V
1.65 − 4.5  
19  
MHz  
IN  
CC  
(Figure 5)  
Frequency Response (Figure 9)  
V
V
Maximum Feed−through On Loss  
Off−Channel Isolation  
V
V
= 0 dBm @ 100 kHz to 50 MHz  
1.65 − 4.5  
1.65 − 4.5  
1.65 − 4.5  
4.3  
−0.06  
−69  
dB  
dB  
pC  
%
ONL  
ISO  
IN  
IN  
centered between V and GND (Figure 5)  
CC  
f = 100 kHz; V = 1 V RMS; C = 5.0 pF  
V
IS  
L
centered between V and GND(Figure 5)  
IN  
CC  
Q
Charge Injection Select Input to  
Common I/O (Figure 8)  
V
V
GND, R = 0 , C = 1.0 nF  
51  
IN = CC to  
IS  
L
Q = C x V  
(Figure 6)  
L
OUT  
THD  
VCT  
Total Harmonic Distortion  
THD + Noise (Figure 7)  
F
= 20 Hz to 20 kHz, R = R  
= 600 , C = 50 pF  
0.042  
−90  
IS  
L
gen  
L
V
= 2 V  
IS  
PP  
Channel−to−Channel Crosstalk  
(Figure 10)  
f = 100 kHz; V = 1.0 V RMS, C = 5.0 pF, R = 50 ꢀ  
V
1.65 − 4.5  
dB  
IS  
L
L
centered between V and GND (Figure 5)  
IN  
CC  
10.Off−Channel Isolation = 20log10 (V  
/V ), V  
COM NO  
= output, V  
= input to off switch.  
COM  
NO  
http://onsemi.com  
6
NLAS3799B, NLAS3799BL  
V
CC  
DUT  
Input  
GND  
V
Output  
CC  
V
OUT  
0.1 F  
t
BMM  
50 ꢀ  
35 pF  
90%  
90% of V  
OH  
Output  
Switch Select Pin  
GND  
Figure 2. tBBM (Time Break−Before−Make)  
V
CC  
Input  
50%  
50%  
90%  
DUT  
0 V  
V
Output  
CC  
V
OUT  
V
0.1 F  
OH  
Open  
90%  
50 ꢀ  
35 pF  
Output  
V
OL  
Input  
t
t
OFF  
ON  
Figure 3. tON/tOFF  
V
V
CC  
CC  
Input  
50%  
50%  
DUT  
0 V  
50 ꢀ  
Output  
V
OUT  
V
OH  
Open  
35 pF  
Output  
V
10%  
10%  
OL  
Input  
t
t
ON  
OFF  
Figure 4. tON/tOFF  
http://onsemi.com  
7
NLAS3799B, NLAS3799BL  
50 ꢀ  
DUT  
Reference  
Transmitted  
Input  
Output  
50 Generator  
50 ꢀ  
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is  
the bandwidth of an On switch. V , Bandwidth and V are independent of the input signal direction.  
ISO  
ONL  
V
OUT  
= Off Channel Isolation = 20 Log ǒ Ǔ  
V
V
for V at 100 kHz  
IN  
ISO  
V
IN  
OUT  
V
= On Channel Loss = 20 Log ǒ Ǔ  
for V at 100 kHz to 50 MHz  
ONL  
IN  
V
IN  
Bandwidth (BW) = the frequency 3 dB below V  
ONL  
V
= Use V  
setup and test to all other switch analog input/outputs terminated with 50 ꢀ  
ISO  
CT  
Figure 5. Off Channel Isolation/On Channel Loss (BW)/Crosstalk  
(On Channel to Off Channel)/VONL  
DUT  
V
CC  
V
Open  
Output  
IN  
GND  
C
L
Output  
Off  
V
OUT  
Off  
On  
V
IN  
Figure 6. Charge Injection: (Q)  
http://onsemi.com  
8
NLAS3799B, NLAS3799BL  
0.045  
20  
10  
0.040  
0.035  
0.030  
0.025  
0.020  
0.015  
0.010  
0
−10  
−20  
−30  
−40  
−50  
−60  
0.005  
0
10  
100  
1000  
10000  
100000  
0
0.5  
1
1.5  
2
2.5  
(V)  
3
3.5  
4
4.5  
FREQUENCY (Hz)  
V
IN  
Figure 7. Total Harmonic Distortion vs.  
Frequency  
Figure 8. Charge Injection @ 0 V < VCC < 4.5 V  
0
−3  
−6  
0
−10  
−20  
−30  
−40  
−50  
−60  
−70  
−9  
−12  
−15  
−18  
−21  
−80  
−90  
−100  
0.01  
0.1  
1
10  
100  
1000  
0.01  
0.1  
1
10  
100  
FREQUENCY (MHz)  
FREQUENCY (MHz)  
Figure 9. Bandwidth vs. Frequency  
Figure 10. Cross−Talk vs. Frequency  
0.6  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.5  
0.4  
0.3  
0.2  
85°C  
25°C  
85°C  
25°C  
−40°C  
−40°C  
0.1  
0
0.1  
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
(V)  
3.0  
3.5  
4.0  
0
0.5  
1.0  
1.5  
(V)  
2.0  
2.5  
3.0  
V
V
IN  
IN  
Figure 11. RON vs. VIN vs. Temperature  
@ VCC = 3.0 V  
Figure 12. RON vs. VIN vs. Temperature  
@ VCC = 4.3 V  
http://onsemi.com  
9
NLAS3799B, NLAS3799BL  
DEVICE ORDERING INFORMATION  
Device Nomenclature  
Circuit  
Indicator  
Device  
Function  
Package Tape & Reel  
Device Order  
Number  
Suffix  
Suffix  
Technology  
Package Type  
Tape & Reel Size  
NLAS3799BMNR2G  
NL  
AS  
3799B  
MN  
R2  
WQFN  
(Pb−Free)  
3000 / Tape & Reel  
3000 / Tape & Reel  
NLAS3799BLMNR2G  
NL  
AS  
3799BL  
MN  
R2  
WQFN  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
10  
NLAS3799B, NLAS3799BL  
PACKAGE DIMENSIONS  
WQFN16 (1.8x2.6x0.4P)  
CASE 488AP−01  
ISSUE A  
D
A
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS  
3. DIMENSION b APPLIES TO PLATED TERMINAL  
AND IS MEASURED BETWEEN 0.25 AND 0.30 MM  
FROM TERMINAL.  
4. COPLANARITY APPLIES TO THE EXPOSED PAD  
AS WELL AS THE TERMINALS.  
PIN 1 REFERENCE  
E
5. EXPOSED PADS CONNECTED TO DIE FLAG.  
USED AS TEST CONTACTS.  
MILLIMETERS  
DIM MIN  
MAX  
0.80  
0.15  
0.15  
C
2X  
A
A1  
A3  
b
0.70  
0.00  
0.050  
0.20 REF  
0.15  
C
2X  
0.25  
B
D
1.80 BSC  
E
2.60 BSC  
0.40 BSC  
e
A
L
0.30  
0.40  
0.50  
0.60  
0.10  
0.08  
C
L1  
C
SEATING  
PLANE  
A1  
MOUNTING FOOTPRINT  
A3  
C
5
8
0.562  
0.0221  
0.400  
0.0157  
15 X L  
4
1
9
0.225  
0.0089  
1
e
12  
2.900  
0.1142  
16  
L1  
0.463  
0.0182  
16 X  
0.10 C A B  
0.05 C  
b
NOTE 3  
1.200  
0.0472  
2.100  
0.0827  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
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Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
NLAS3799B/D  

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