NLAS3899BMNTWG [ONSEMI]
Dual DPDT Low RON, Low Capacitance Switch;型号: | NLAS3899BMNTWG |
厂家: | ONSEMI |
描述: | Dual DPDT Low RON, Low Capacitance Switch 光电二极管 输出元件 |
文件: | 总10页 (文件大小:137K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NLAS3899B
Dual DPDT Low RON, Low
Capacitance Switch
The NLAS3899B is a dual DPDT analog switch designed for low
power audio and dual SIM card applications. The low R of 3.0
ꢀ
ON
(typical) is ideal for routing audio signals to or from a moderately high
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MARKING
impedance load. In addition, the low C of 20 pF (typical) gives the
ON
NLAS3899B a high bandwidth of 280 MHz, perfect for dual SIM card
applications.
DIAGRAMS
Features
16
• Single Supply Operation
1
1.65 to 4.3 V V
CC
AAMG
Function Directly from Li−Ion Battery
G
• Low ON Resistance (3.0 ꢀ Typical Across V
)
CC
WQFN16
CASE 488AP
1
• Low C (20 pF Typical)
ON
• Bandwidth 280 MHz
16
1
• Maximum Breakdown Voltage: 5.5 V
• Low Static Power
QFN16
CASE 485AE
NLAS
3899
ALYW
1
• Interfaces with 1.8 V Chipset
• These are Pb−Free Devices
Typical Applications
XX
A
M
L
= Specific Device Code
= Assembly Location
= Date Code/Assembly Location
= Wafer Lot
= Year
= Work Week
• Cell Phone Speaker/Microphone Switching
• Ringtone−Chip/Amplifier Switching
• Dual SIM Card Data Switching
• Four Unbalanced (Single−Ended) Switches
Y
W
G
= Pb−Free Package
Important Information
• ESD Protection:
(Note: Microdot may be in either location)
Human Body Model (HBM) 1000 V − All Pins
Human Body Model (HBM) 5000 V − I/O to GND
• Continuous Current Rating Through each Switch 300 mA
COMA NOA Vcc NCD
16
15
14
13
• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
• Package:
1
12
NCA
A−B IN
NOB
COMD
NOD
♦ 1.8 x 2.6 x 0.75 mm WQFN16 Pb−Free
♦ 3.0 x 3.0 x 0.9 mm QFN16 Pb−Free
2
3
4
11
10
9
C−D IN
NCC
COMB
5
6
7
8
NCB GND NOCCOMC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
August, 2012 − Rev. 1
NLAS3899B/D
NLAS3899B
COM
NC
NO
IN
Figure 1. Input Equivalent Circuit
PIN DESCRIPTION
QFN PIN #
Symbol
Name and Function
1, 3, 5, 7, 9, 11, 13, 15
NO A−D, NC A−D
A−B IN, C−D IN
COM A−D
Independent Channels
Controls
2, 10
4, 8, 12, 16
Common Channels
Ground (V)
6
GND
14
V
CC
Positive Supply Voltage
TRUTH TABLE
IN
H
L
NO
ON
NC
OFF*
ON
OFF*
*High impedance.
OPERATING CONDITIONS
MAXIMUM RATINGS
Symbol
Pins
Parameter
Value
−0.5 to +5.5
Condition
Unit
V
V
CC
V
CC
Positive DC Supply Voltage
Analog Signal Voltage
V
IS
NOx, NCx, or
COMx
−0.5 to V + 0.5
V
CC
V
IN
A−B IN, C−D IN
Control Input Voltage
−0.5 to 5.5
V
I
NOx, NCx, or
COMx
Analog Signal Continuous Current
300
Closed Switch
mA
IS_CON
I
NOx, NCx, or
COMx
Analog Signal Peak Current
500
10% Duty Cycle
mA
IS_PK
I
IN
A−B IN, C−D IN
Control Input Current
20
mA
T
Storage Temperature Range
−65 to 150
°C
STG
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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2
NLAS3899B
RECOMMENDED OPERATING CONDITIONS
Symbol
Pins
Parameter
Value
Condition
Unit
V
V
CC
V
CC
Positive DC Supply Voltage
Analog Signal Voltage
1.65 to 4.3
V
IS
NOx, NCx, or
COMx
GND to V
V
CC
V
A−B IN, C−D IN
Control Input Voltage
GND to 4.3
−40 to +85
20
V
IN
T
Operating Temperature Range
Input Rise or Fall Time
°C
A
t , t
r
V
V
= 1.6 V − 2.7 V
= 3.0 V − 4.5 V
ns/V
f
CC
10
CC
Minimum and maximum values are guaranteed through test or design across the Recommended Operating Conditions, where
applicable. Typical values are listed for guidance only and are based on the particular conditions listed for each section, where
applicable. These conditions are valid for all values found in the characteristics tables unless otherwise specified in the test conditions.
ESD PROTECTION
Pins
Description
Minimum Voltage
All Pins
Human Body Model
Human Body Model
1 kV
5 kV
I/O to GND
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3
NLAS3899B
DC Electrical Characteristics
Typical: T = 25°C; V = 3.0 V
CC
CONTROL INPUT (Typical: T = 25°C; V = 3.0 V)
CC
−405C to +855C
V
(V)
CC
Min
Typ
Max
Symbol
Pins
Parameter
Test Conditions
Unit
V
IH
A−B IN,
C−D IN
Control Input High
3.0
4.3
1.3
1.6
V
V
IL
A−B IN,
C−D IN
Control Input Low
3.0
4.3
0.5
0.6
V
I
IN
A−B IN,
C−D IN
Control Input Leakage
0 v V v V
CC
4.3
0.1
1.0
ꢁ
A
IN
SUPPLY CURRENT AND LEAKAGE (Typical: T = 25°C; V = 3.0 V)
CC
−405C to +855C
V
(V)
CC
Min
Typ
Max
Symbol
Pins
Parameter
Test Conditions
= V or V
Unit
I
NCx, NOx
OFF State Leakage
V
V
V
4.3
4.3
10
300
nA
NO/NC
IN
IL
IH
(OFF)
= 0.3 V
NC/NO
= 4.0 V
COM
I
COMx
ON State Leakage
V
V
V
V
V
V
= V or V
IH
10
300
nA
COM
IN
IL
(ON)
= 0.3 V or 4.0 V with
floating or
NO
NC
NC
NO
COM
= 0.3 V or 4.0 V with
floating
= 0.3 V or 4.0 V
I
V
Quiescent Supply
Power Off Leakage
V
D
and V = V or GND
1.65 − 4.3
1.0
0.5
2.0
2.0
ꢁ A
ꢁ A
CC
CC
IN
IS
CC
I
= 0 A
I
A−B IN,
C−D IN
V
IN
= 4.3 V or GND
0
OFF
ON RESISTANCE (Typical: T = 25°C; V = 3.0 V)
CC
−405C to +855C
V
(V)
CC
Min
Typ
Max
Symbol
Pins
Parameter
Test Conditions
Unit
R
ON
NOx, NCx ON Resistance
COMx
I
= −100 mA
2.5
3.0
3.6
4.3
3.0
2.6
2.5
2.2
4.0
3.0
3.0
2.5
ꢀ
ON
IS
V
= 0 to V
CC
R
NOx, NCx
COMx
R
R
Flatness
Matching
I
= −100 mA
3.0
4.3
0.8
1.1
ꢀ
ꢀ
FLAT
ON
ON
IS
V
= 0 to V
CC
ꢂ
R
NOx, NCx
COMx
I
= −100 mA
3.0
4.3
0.8
0.7
ON
ON
ON
V
= 0 to V
IS
CC
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4
NLAS3899B
AC ELECTRICAL CHARACTERISTICS
TIMING/FREQUENCY (Typical: T = 25°C; V = 3.0 V, R = 50 ꢀ, C = 35 pF, f = 1 MHz)
CC
L
L
−405C to +855C
V
(V)
CC
Min
Typ
Max
Symbol
Pins
Parameter
Test Conditions
Unit
t
IN to
NCx or NOx
Turn On Time
2.3 − 4.3
30
40
ns
ON
t
IN to
Turn Off Time
2.3 − 4.53
3.0
20
15
30
ns
ns
OFF
NCx or NOx
t
IN to
NCx or NOx
Break Before Make
−3dB Bandwidth
2
BBM
BW
C = 5 pF
L
1.65 − 4.3
280
MHz
ISOLATION AND THD (Typical: T = 25°C; V = 3.0 V, RL = 50 ꢀ, CL = 5 pF, f = 1 MHz)
CC
−405C to +855C
V
(V)
CC
Min
Typ
Max
Symbol
Pins
Parameter
Test Conditions
= V to GND
Unit
Q
Charge Injection
V
1.65 − 4.3
111
pC
IN
IS
CC
R
= 0 ꢀ, C = 1.0 nF
L
Q = C − ΔV
L
OUT
THD
Total Harmonic Dis-
tortion
F
= 20 Hz to 20 kHz
3.0
0.007
%
IS
L
L
IS
R = R
= 600 ꢀ,
gen
C = 1.0 pF
V
= 1.0 V
PP
V
Maximum Feed-
through On Loss
V
V
= 0 dBm @ 100 kHz to 50 MHz 1.65 − 4.3
−0.06
−67
dB
dB
dB
ONL
IN
IN
centered between V & GND
CC
O
NOx
Off Isolation
V
V
= 0
1.65 − 4.3
1.65 − 4.3
IRR
IN
NO
or V (pk−pk) = 1.0 V
NC
Xtalk
COMx to
COMy
Non−Adjacent Chan-
nel
V
NO
or V (pk−pk) = 1.0 V
−100
NC
CAPACITANCE (Typical: T = 25°C; V = 3.0 V, R = 50 ꢀ, C = 5 pF, f = 1 MHz)
CC
L
L
−405C to +855C
V
(V)
CC
Min
Typ
Max
Symbol
Pins
Parameter
Test Conditions
Unit
C
IN
A−B IN, C−D Control Input
0 V
5.0
pF
IN
C
NCx to COMx Through Switch
V
V
= 0V
3.0 V
3.0 V
20
10
pF
pF
ON
IN
C
OFF
NCx
NOx
Unselected Port
= 3.0V, V = 3.0V
IS
IN
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5
NLAS3899B
0.014
0.012
0.00035
0.00030
0.00025
0.00020
0.00015
4.3 V @ 25°C
3.6 V @ 25°C
3.0 V @ 25°C
4.3 V @ 25°C
3.6 V @ 25°C
3.0 V @ 25°C
0.010
0.008
0.006
0.004
0.002
0.00010
0
0
−0.002
0
0.5
1.0
1.5
2.0
(V)
2.5
3.0
3.5
4.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
in
V (V)
in
Figure 2. ICC vs. Vin
Figure 3. (Expanded View) ICC vs. Vin
V
CC
DUT
Input
GND
V
Output
50
CC
V
OUT
0.1 ꢁ F
t
BMM
ꢀ
35 pF
90%
90% of V
OH
Output
Switch Select Pin
GND
Figure 4. tBBM (Time Break−Before−Make)
V
CC
DUT
Input
50%
50%
90%
V
Output
50
CC
0 V
V
OUT
0.1 ꢁ F
Open
V
OH
ꢀ
35 pF
90%
Output
V
OL
Input
t
t
OFF
ON
Figure 5. tON/tOFF
V
CC
V
CC
Input
50%
50%
DUT
0 V
50
ꢀ
Output
V
OUT
V
OH
Open
35 pF
Output
V
10%
10%
OL
Input
t
t
ON
OFF
Figure 6. tON/tOFF
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6
NLAS3899B
50
ꢀ
DUT
Reference
Input
50 ꢀ Generator
Transmitted
Output
50
ꢀ
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is
the bandwidth of an On switch. V , Bandwidth and V are independent of the input signal direction.
ISO
ONL
V
OUT
IN
ǒ V Ǔ
V
V
= Off Channel Isolation = 20 Log
for V at 100 kHz
IN
ISO
V
OUT
= On Channel Loss = 20 Log ǒ Ǔ
for V at 100 kHz to 50 MHz
ONL
IN
V
IN
Bandwidth (BW) = the frequency 3 dB below V
ONL
V
CT
= Use V
setup and test to all other switch analog input/outputs terminated with 50 ꢀ
ISO
Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk
(On Channel to Off Channel)/VONL
DUT
V
CC
V
IN
Open
Output
GND
C
L
Output
Off
ꢂ
V
OUT
Off
On
V
IN
Figure 8. Charge Injection: (Q)
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7
NLAS3899B
DEVICE ORDERING INFORMATION
Device Order Number
†
Package Type
Tape & Reel Size
NLAS3899BMNTBG
WQFN16
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
(Pb−Free)
NLAS3899BMNTWG
NLAS3899BMNTXG
QFN16
(Pb−Free)
QFN16
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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8
NLAS3899B
PACKAGE DIMENSIONS
WQFN16, 1.8x2.6, 0.4P
CASE 488AP
ISSUE B
L
L
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
L1
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND 0.30 MM
FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD
AS WELL AS THE TERMINALS.
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTIONS
PIN 1 REFERENCE
E
5. EXPOSED PADS CONNECTED TO DIE FLAG.
USED AS TEST CONTACTS.
MILLIMETERS
A3
EXPOSED Cu
MOLD CMPD
DIM MIN
MAX
0.80
0.15
0.15
C
2X
A
A1
A3
b
0.70
0.00
0.050
0.20 REF
C
2X
0.15
0.25
B
A1
D
1.80 BSC
E
2.60 BSC
0.40 BSC
DETAIL B
e
A
ALTERNATE
DETAIL B
L
0.30
0.50
0.15
0.60
0.10
0.08
C
CONSTRUCTIONS
0.00
0.40
L1
L2
C
SEATING
PLANE
A1
MOUNTING FOOTPRINT
DETAIL A
A3
C
5
8
0.562
0.0221
0.400
0.0157
15 X L
4
1
9
0.225
0.0089
1
e
12
2.900
0.1142
16
L2
0.463
0.0182
16 X
0.10 C A B
b
0.05 C
NOTE 3
1.200
0.0472
2.100
0.0827
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
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9
NLAS3899B
PACKAGE DIMENSIONS
QFN16 3x3, 0.5 P
CASE 485AE
ISSUE A
NOTES:
D
L
L
A
B
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. OUTLINE MEETS JEDEC DIMENSIONS PER
MO−220, VARIATION VEED−6.
L1
DETAIL A
PIN 1
LOCATION
ALTERNATE TERMINAL
CONSTRUCTIONS
E
MILLIMETERS
DIM MIN
NOM
0.90
0.03
0.20 REF
0.25
3.00 BSC
1.40
3.00 BSC
1.40
0.50 BSC
−−−
0.40
−−−
MAX
1.00
0.05
A3
EXPOSED Cu
MOLD CMPD
A
A1
A3
b
D
D2
E
0.80
0.00
0.15
C
TOP VIEW
0.18
1.25
1.25
0.30
1.55
1.55
0.15
C
A1
DETAIL B
E2
e
(A3)
ALTERNATE
0.10
0.08
C
C
DETAIL B
CONSTRUCTIONS
K
L
L1
0.20
0.30
0.00
−−−
0.50
0.15
A
SEATING
PLANE
16 X
SIDE VIEW
D2
A1
C
DETAIL A
e
L
16X
EXPOSED PAD
5
8
NOTE 5
4
9
E2
K
16X
12
1
16
13
16X b
0.10 C A
B
BOTTOM VIEW
0.05
C
NOTE 3
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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NLAS3899B/D
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