NL17SH32 [ONSEMI]
Single 2-Input OR Gate;
| 型号： | NL17SH32 |
| 厂家： | 
ONSEMI |
| 描述： | Single 2-Input OR Gate 栅 |
| 文件： | 总5页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NL17SH32
Single 2-Input OR Gate
The NL17SH32 is an advanced high speed CMOS 2−input OR gate
fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The NL17SH32 input structure provides protection when voltages
up to 7 V are applied, regardless of the supply voltage. This allows the
NL17SH32 to be used to interface 5 V circuits to 3 V circuits.
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MARKING
DIAGRAM
Features
• High Speed: t = 3.7 ns (Typ) at V = 5 V
PD
CC
SOT−953
CASE 527AE
FM
• Low Power Dissipation: I = 1 mA (Max) at T = 25°C
CC
A
1
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• These are Pb−Free Devices
F
M
= Specific Device Code
= Month Code
PIN ASSIGNMENT
1
2
3
4
5
IN A
GND
IN B
V
1
2
5
IN A
GND
IN B
CC
OUT Y
V
CC
FUNCTION TABLE
Inputs
Output
Y
4
OUT Y
3
A
B
L
L
L
H
L
L
H
H
H
Figure 1. Pinout (Top View)
H
H
H
IN A
IN B
≥ 1
OUT Y
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Figure 2. Logic Symbol
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
April, 2014 − Rev. 2
NL17SH32/D
NL17SH32
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
CC
DC Supply Voltage
−0.5 to +7.0
−0.5 to +7.0
V
IN
DC Input Voltage
V
V
OUT
DC Output Voltage
−0.5 to V +0.5
V
CC
I
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
Storage Temperature Range
−20
mA
mA
mA
mA
°C
IK
I
20
OK
I
25
OUT
I
50
CC
T
−65 to +150
STG
T
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Power Dissipation in Still Air
Moisture Sensitivity
260
°C
L
T
+150
°C
J
P
D
50
Level 1
mW
MSL
F
Flammability Rating
Oxygen Index: 28 to 34
Above V and Below GND at 125°C (Note 1)
UL 94 V−0 @ 0.125 in
100
R
I
Latchup Performance
mA
LATCHUP
CC
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
2.0
0.0
0.0
−55
Max
5.5
Unit
V
V
CC
DC Supply Voltage
V
IN
DC Input Voltage
5.5
V
V
OUT
DC Output Voltage
V
CC
V
T
A
Operating Temperature Range
Input Rise and Fall Time
+125
°C
ns/V
t , t
V
CC
V
CC
= 3.3 V 0.3 V
= 5.0 V 0.5 V
0
0
100
20
r
f
Device Junction Temperature versus
Time to 0.1% Bond Failures
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Junction
Temperature °C
Time, Hours
1,032,200
419,300
178,700
79,600
Time, Years
117.8
47.9
80
90
1
100
110
120
130
140
20.4
9.4
1
10
100
1000
37,000
4.2
TIME, YEARS
17,800
2.0
Figure 3. Failure Rate vs. Time
Junction Temperature
8,900
1.0
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2
NL17SH32
DC ELECTRICAL CHARACTERISTICS
T
A
= 255C
Typ
T
v 855C
*555C to 1255C
A
V
(V)
CC
Min
Max
Min
Max
Min
Max
Symbol
Parameter
Test Conditions
Unit
V
IH
Minimum High−Level
Input Voltage
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
V
Maximum Low−Level
Input Voltage
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
V
IL
V
OH
Minimum High−Level
Output Voltage
V
IN
V
IN
V
IN
V
IN
= V or V
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
IH
IL
I
= *50 mA
OH
V
IN
= V or V
IH IL
= V or V
IH
IL
I
= *4 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
OH
I
= *8 mA
OH
V
OL
Maximum Low−Level
Output Voltage
= V or V
IL
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
IH
I
= 50 mA
OL
V
IN
= V or V
IH IL
= V or V
IH
IL
I
= 4 mA
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
OL
I
OL
I
Maximum Input
Leakage Current
V
V
= 5.5 V or GND
0 to
5.5
$0.1
$1.0
$1.0
mA
mA
IN
IN
I
Maximum Quiescent
Supply Current
= V or GND
5.5
1.0
10
40
CC
IN
CC
AC ELECTRICAL CHARACTERISTICS C
= 50 pF, Input t = t = 3.0 ns
r f
load
T
A
= 25°C
T
A
≤ 85°C
−55 ≤ T ≤ 125°C
A
Min
Typ
Max
Min
Max
Min
Max
Symbol
Parameter
Test Conditions
= 3.3 0.3 V C = 15 pF
Unit
t
,
Maximum Propagation
Delay,
Input A or B to Y
V
V
4.8
6.1
7.9
11.4
9.5
13.0
11.5
15.5
ns
PLH
CC
L
t
C = 50 pF
L
PHL
= 5.0 0.5 V C = 15 pF
3.7
4.4
5.5
7.5
6.5
8.5
8.0
10.0
CC
L
C = 50 pF
L
C
Maximum Input
Capacitance
5.5
10
10
10
pF
pF
IN
Typical @ 25°C, V = 5.0 V
CC
11
C
Power Dissipation Capacitance (Note 2)
PD
2. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
PD
Average operating current can be obtained by the equation: I
power consumption; P = C ꢀ V
) = C ꢀ V ꢀ f + I . C is used to determine the no−load dynamic
CC(OPR
PD CC in CC PD
2
ꢀ f + I ꢀ V
.
D
PD
CC
in
CC
CC
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3
NL17SH32
50%
50% V
CC
Input A or B
Output Y
GND
t
PLH
t
PHL
V
V
OH
50% V
CC
OL
Figure 4. Switching Waveforms
INPUT
OUTPUT
C
L*
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended
for propagation delay tests.
Figure 5. Test Circuit
ORDERING INFORMATION
Device
†
Package
Shipping
NL17SH32P5T5G
SOT−953
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NL17SH32
PACKAGE DIMENSIONS
SOT−953
CASE 527AE
ISSUE E
NOTES:
X
Y
D
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
A
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
5
4
3
PIN ONE
INDICATOR
H
E
E
1
2
MILLIMETERS
DIM MIN
NOM
0.37
0.15
0.12
1.00
MAX
0.40
0.20
0.17
1.05
0.85
A
b
0.34
0.10
0.07
0.95
0.75
C
TOP VIEW
e
C
D
SIDE VIEW
E
0.80
e
0.35 BSC
HE
0.95
1.00
1.05
0.175 REF
0.10
−−−
L
L2
L3
5X
L
0.05
−−−
0.15
0.15
5X
5X
L3
L2
SOLDERING FOOTPRINT*
5X
0.35
5X
0.20
5X
b
PACKAGE
OUTLINE
0.08 X
Y
BOTTOM VIEW
1.20
1
0.35
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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NL17SH32/D
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