NCV8403ASTT1G [ONSEMI]
Self-Protected Low Side Driver;
| 型号： | NCV8403ASTT1G |
| 厂家： | 
ONSEMI |
| 描述： | Self-Protected Low Side Driver 驱动 光电二极管 接口集成电路 |
| 文件： | 总12页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCV8403A, NCV8403B
Self-Protected Low Side
Driver with Temperature
and Current Limit
42 V, 14 A, Single N−Channel, SOT−223
www.onsemi.com
NCV8403A/B is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
V
I MAX
D
(Limited)
DSS
R
TYP
DS(on)
(Clamped)
42 V
53 mW @ 10 V
15 A
Drain
Features
• Short Circuit Protection
Overvoltage
Protection
• Thermal Shutdown with Automatic Restart
• Over Voltage Protection
Gate
Input
• Integrated Clamp for Inductive Switching
• ESD Protection
ESD Protection
• dV/dt Robustness
Temperature
Limit
Current
Limit
Current
Sense
• Analog Drive Capability (Logic Level Input)
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
Source
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
Typical Applications
4
DRAIN
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
1
4
2
3
AYW
xxxxxG
G
SOT−223
CASE 318E
STYLE 3
1
2
3
SOURCE
GATE
DRAIN
4
2
1
YWW
xxxxxG
3
DPAK
CASE 369C
A
Y
= Assembly Location
= Year
W, WW = Work Week
xxxxx = V8403A or V8403B
G or G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
September, 2016 − Rev. 8
NCV8403/D
NCV8403A, NCV8403B
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
42
Unit
Vdc
Vdc
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
V
DSS
V
GS
"14
Drain Current
Continuous
I
D
Internally Limited
Total Power Dissipation − SOT−223 Version
P
D
W
@ T = 25°C (Note 1)
1.13
1.56
A
@ T = 25°C (Note 2)
A
Total Power Dissipation − DPAK Version
@ T = 25°C (Note 1)
1.32
2.5
A
@ T = 25°C (Note 2)
A
Thermal Resistance − SOT−223 Version
Junction−to−Soldering Point
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Thermal Resistance − DPAK Version
Junction−to−Soldering Point
°C/W
R
R
R
12
110
80
q
JS
JA
JA
q
q
2.5
95
50
R
R
R
q
q
q
JS
JA
JA
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Single Pulse Inductive Load Switching Energy
E
AS
470
mJ
(V = 25 Vdc, V = 5.0 V, I = 2.8 A, L = 120 mH, R = 25 W)
DD
GS
L
G
Load Dump Voltage (V = 0 and 10 V, R = 2.0 W, R = 4.5 W, t = 400 ms)
V
LD
55
V
GS
I
L
d
Operating Junction Temperature
T
−40 to 150
−55 to 150
°C
°C
J
Storage Temperature
T
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
+
I
D
DRAIN
I
G
VDS
GATE
+
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
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2
NCV8403A, NCV8403B
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(V = 0 Vdc, I = 250 mAdc)
V
(BR)DSS
42
40
46
45
51
51
Vdc
Vdc
GS
D
(V = 0 Vdc, I = 250 mAdc, T = −40°C to 150°C) (Note 3)
GS
D
J
Zero Gate Voltage Drain Current
(V = 32 Vdc, V = 0 Vdc)
I
mAdc
DSS
−
−
0.6
2.5
5.0
−
DS
GS
(V = 32 Vdc, V = 0 Vdc, T = 150°C) (Note 3)
DS
GS
J
Gate Input Current
I
−
50
125
mAdc
GSS
(V = 5.0 Vdc, V = 0 Vdc)
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
DS(on)
DS(on)
(V = V , I = 1.2 mAdc)
1.0
−
1.7
5.0
2.2
−
Vdc
mV/°C
DS
GS
D
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 4)
R
R
mW
mW
V
(V = 10 Vdc, I = 3.0 Adc, T @ 25°C)
−
−
53
95
68
123
GS
D
J
(V = 10 Vdc, I = 3.0 Adc, T @ 150°C) (Note 3)
GS
D
J
Static Drain−to−Source On−Resistance (Note 4)
(V = 5.0 Vdc, I = 3.0 Adc, T @ 25°C)
−
−
63
105
76
135
GS
D
J
(V = 5.0 Vdc, I = 3.0 Adc, T @ 150°C) (Note 3)
GS
D
J
Source−Drain Forward On Voltage
(I = 7.0 A, V = 0 V)
V
−
0.95
1.1
SD
S
GS
SWITCHING CHARACTERISTICS (Note 3)
Turn−ON Time (10% V to 90% I )
ms
t
44
84
IN
D
ON
V
I
= 0 V to 5 V, V = 25 V
DD
IN
= 1.0 A, Ext R = 2.5 W
D
G
Turn−OFF Time (90% V to 10% I )
t
OFF
IN
D
Turn−ON Time (10% V to 90% I )
t
15
IN
D
ON
V
IN
= 0 V to 10 V, V = 25 V
DD ,
I
= 1.0 A, Ext R = 2.5 W
D
G
Turn−OFF Time (90% V to 10% I )
t
116
2.43
0.83
IN
D
OFF
V/ms
Slew−Rate ON (20% V to 50% V
)
−dV /dt
DS ON
DS
DS
V
= 0 to 10 V, V = 12 V,
DD
in
R = 4.7 W
L
Slew−Rate OFF (80% V to 50% V
)
dV /dt
DS OFF
DS
DS
SELF PROTECTION CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5)
J
Current Limit
V
= 5.0 V, V = 10 V
I
I
10
5.0
15
10
20
15
Adc
Adc
GS
DS
LIM
V
= 5.0 V, T = 150°C (Note 3)
GS
J
Current Limit
V
= 10 V, V = 10 V
12
8.0
17
13
22
18
GS
DS
LIM
V
= 10 V, T = 150°C (Note 3)
GS
J
Temperature Limit (Turn−off)
Thermal Hysteresis
V
= 5.0 Vdc (Note 3)
T
150
−
175
15
200
−
°C
°C
°C
°C
GS
LIM(off)
V
GS
= 5.0 Vdc
DT
LIM(on)
Temperature Limit (Turn−off)
Thermal Hysteresis
V
= 10 Vdc (Note 3)
T
150
−
165
15
185
−
GS
LIM(off)
V
GS
= 10 Vdc
DT
LIM(on)
GATE INPUT CHARACTERISTICS (Note 3)
Device ON Gate Input Current
I
mA
mA
mA
V
= 5 V I = 1.0 A
50
400
0.1
GON
GS
D
V
= 10 V I = 1.0 A
GS
GS
D
Current Limit Gate Input Current
I
GCL
V
= 5 V, V = 10 V
DS
V
= 10 V, V = 10 V
0.6
GS
DS
Thermal Limit Fault Gate Input Current
I
GTL
V
GS
= 5 V, V = 10 V
0.45
1.5
DS
V
= 10 V, V = 10 V
DS
GS
ESD ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 3)
J
Electro−Static Discharge Capability
Electro−Static Discharge Capability
3. Not subject to production testing.
Human Body Model (HBM)
Machine Model (MM)
ESD
ESD
4000
400
−
−
−
−
V
V
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
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3
NCV8403A, NCV8403B
TYPICAL PERFORMANCE CURVES
10
1000
T
Jstart
= 25°C
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 150°C
1
100
10
100
10
100
L (mH)
L (mH)
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
Figure 3. Single−Pulse Maximum Switching
Energy vs. Load Inductance
100
1000
T
Jstart
= 25°C
10
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 150°C
1
100
1
10
1
10
TIME IN CLAMP (ms)
TIME IN CLAMP (ms)
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single−Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
25
20
15
10
20
15
10
6 V 7 V 8 V 9 V
−40°C
25°C
V
DS
= 10 V
10 V
5 V
4 V
100°C
150°C
T = 25°C
a
3 V
5
0
5
0
V
= 2.5 V
GS
0
1
2
3
4
5
1.0
1.5
2.0
2.5
(V)
3.0
3.5
4.0
V
DS
(V)
V
GS
Figure 6. On−state Output Characteristics
Figure 7. Transfer Characteristics
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4
NCV8403A, NCV8403B
TYPICAL PERFORMANCE CURVES
100
150
125
100
I
D
= 3 A
150°C, V = 5 V
GS
90
150°C
80
70
60
50
40
150°C, V = 10 V
GS
100°C, V = 5 V
GS
100°C, V = 10 V
GS
100°C
25°C, V = 5 V
GS
75
25°C, V = 10 V
GS
25°C
50
25
−40°C, V = 5 V
GS
30
20
−40°C
−40°C, V = 10 V
GS
3
4
5
6
7
8
9
10
1
2
3
4
5
I
6
7
8
9
10
V
GS
(V)
(A)
D
Figure 8. RDS(on) vs. Gate−Source Voltage
Figure 9. RDS(on) vs. Drain Current
25
20
15
2.00
1.75
1.50
1.25
1.00
−40°C
25°C
I
D
= 5 A
100°C
150°C
V
GS
= 5 V
10
5
V
= 10 V
GS
0.75
0.50
V
DS
= 10 V
−40 −20
0
20
40
60
80 100 120 140
5
6
7
8
9
10
T (°C)
V
GS
(V)
Figure 10. Normalized RDS(on) vs. Temperature
Figure 11. Current Limit vs. Gate−Source
Voltage
25
100
10
V
GS
= 0 V
V
DS
= 10 V
V
GS
= 10 V
150°C
20
15
1
V
GS
= 5 V
0.1
100°C
25°C
0.01
0.001
10
5
−40°C
0.0001
0.00001
−40 −20
0
20 40
60
80 100 120 140
10
15
20
25
(V)
30
35
40
T (°C)
J
V
DS
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
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5
NCV8403A, NCV8403B
TYPICAL PERFORMANCE CURVES
1.2
1.1
1.0
0.9
0.8
1.0
I
V
= 1.2 mA
D
−40°C
25°C
0.9
0.8
0.7
= V
GS
DS
100°C
150°C
0.6
0.5
0.7
0.6
V
= 0 V
9
GS
−40 −20
0
20
40
60
80 100 120 140
1
2
3
4
5
6
7
8
10
T (°C)
I (A)
S
Figure 14. Normalized Threshold Voltage vs.
Temperature
Figure 15. Source−Drain Diode Forward
Characteristics
250
200
150
100
3.0
2.5
V
I
R
= 25 V
= 5 A
= 0 W
DD
V
I
R
= 25 V
= 5 A
= 0 W
DD
D
D
−dV /d
DS t(on)
G
G
2.0
1.5
1.0
t
d(off)
dV /d
DS t(off)
50
0
t
f
0.5
0
t
r
t
d(on)
3
4
5
6
7
8
9
10
3
4
5
6
7
8
9
10
V
GS
(V)
V
GS
(V)
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
2.50
2.25
2.00
1.75
1.50
1.25
1.00
100
75
−dV /d
, V = 10 V
DS t(on) GS
t
, V = 10 V
d(off) GS
V
= 25 V
= 5 A
DD
V
= 25 V
DD
I
D
t
, V = 5 V
d(off) GS
I = 5 A
D
50
t , V = 5 V
f
GS
t , V = 10 V
f
GS
t , V = 5 V
dV /d
DS t(off) GS
, V = 5 V
r
GS
25
0
t
, V = 5 V
t
, V = 10 V
d(on) GS
d(on) GS
dV /d
, V = 10 V
DS t(off) GS
t , V = 10 V
r
GS
0.75
0.50
−dV /d
, V = 5 V
DS t(on) GS
0
500
1000
(W)
1500
2000
0
500
1000
(W)
1500
2000
R
R
G
G
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
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6
NCV8403A, NCV8403B
TYPICAL PERFORMANCE CURVES
150
125
100
75
150
125
100
PCB Cu thickness, 1.0 oz
75
50
25
PCB Cu thickness, 2.0 oz
PCB Cu thickness, 1.0 oz
PCB Cu thickness, 2.0 oz
50
25
0
100 200
300
400
500
600
700
800
0
100 200
300
400
500
600
700
800
2
2
COPPER HEAT SPREADER AREA (mm )
COPPER HEAT SPREADER AREA (mm )
Figure 20. RqJA vs. Copper Area − SOT−223
Figure 21. RqJA vs. Copper Area − DPAK
1000
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 22. Transient Thermal Resistance − SOT−223 Version
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
0.01
Single Pulse
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 23. Transient Thermal Resistance − DPAK Version
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7
NCV8403A, NCV8403B
TEST CIRCUITS AND WAVEFORMS
RL
VIN
+
−
D
RG
VDD
DUT
G
S
IDS
Figure 24. Resistive Load Switching Test Circuit
90%
10%
90%
VIN
td(ON)
tr
td(OFF)
tf
10%
IDS
Figure 25. Resistive Load Switching Waveforms
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8
NCV8403A, NCV8403B
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
+
−
RG
VDD
DUT
G
S
tp
IDS
Figure 26. Inductive Load Switching Test Circuit
5 V
0 V
VIN
T
av
T
p
V
(BR)DSS
I
pk
VDD
VDS
IDS
V
DS(on)
0
Figure 27. Inductive Load Switching Waveforms
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9
NCV8403A, NCV8403B
ORDERING INFORMATION
Device
†
Package
Shipping
NCV8403ASTT1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
4000 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
NCV8403ASTT3G
NCV8403ADTRKG
NCV8403BDTRKG
SOT−223
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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10
NCV8403A, NCV8403B
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
MIN
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
H
E
E
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
1
3
b
e1
e
2.00
7.30
0.069
0.276
−
0.078
0.287
10°
C
q
H
E
q
A
0°
10°
0°
0.08 (0003)
STYLE 3:
PIN 1. GATE
2. DRAIN
A1
L
L1
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
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11
NCV8403A, NCV8403B
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
NOTES:
ISSUE F
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
A
D
E
C
A
b3
B
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
c2
4
2
L3
L4
Z
DETAIL A
H
1
3
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
NOTE 7
MIN
2.18
0.00
0.63
0.72
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
c
b2
e
BOTTOM VIEW
A
SIDE VIEW
b
b
b2 0.028 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
TOP VIEW
c
0.018 0.024
c2 0.018 0.024
Z
Z
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
H
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
GAUGE
PLANE
SEATING
PLANE
H
L
L1
L2
0.370 0.410
0.055 0.070
0.114 REF
L2
C
0.020 BSC
L3 0.035 0.050
L
BOTTOM VIEW
A1
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
L1
ALTERNATE
CONSTRUCTIONS
DETAIL A
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NCV8403/D
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