NCV8403DTRKG [ONSEMI]
Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223; 与温度和电流限制42 V ， 14 A单N沟道， SOT- 223自保护低端驱动器
| 型号： | NCV8403DTRKG |
| 厂家： | 
ONSEMI |
| 描述： | Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 |
| 文件： | 总12页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCV8403
Self-Protected Low Side
Driver with Temperature
and Current Limit
42 V, 14 A, Single N−Channel, SOT−223
http://onsemi.com
NCV8403 is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
V
I MAX
D
(Limited)
DSS
R
TYP
DS(on)
(Clamped)
42 V
53 mW @ 10 V
15 A
Drain
Features
• Short Circuit Protection
• Thermal Shutdown with Automatic Restart
• Over Voltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
Overvoltage
Protection
Gate
Input
ESD Protection
• dV/dt Robustness
Temperature
Limit
Current
Limit
Current
Sense
• Analog Drive Capability (Logic Level Input)
• RoHs Compliant
• AEC-Q101 Qualified
• NCV Prefix for Automotive and Other Applications Requiring Site
Source
and Change Control
MARKING
DIAGRAM
• These are Pb−Free Devices
4
Typical Applications
DRAIN
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
1
4
2
3
AYW
8403G
G
SOT−223
CASE 318E
STYLE 3
1
2
3
SOURCE
GATE
DRAIN
4
2
1
YWW
V8403G
3
DPAK
CASE 369C
A
Y
IL
= Assembly Location
= Year
= Wafer Lot
W, WW = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
February, 2010 − Rev. 4
NCV8403/D
NCV8403
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
Symbol
Value
42
Unit
Vdc
Vdc
V
DSS
V
GS
"14
Drain Current
Continuous
I
D
Internally Limited
Total Power Dissipation
P
D
W
@ T = 25°C (Note 1)
1.13
1.56
A
@ T = 25°C (Note 2)
A
Thermal Resistance − SOT−223 Version
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Thermal Resistance − DPAK Version
Junction−to−Case
°C/W
R
R
R
12
110
80
q
JC
JA
JA
q
q
2.5
95
50
R
q
R
q
R
q
JC
JA
JA
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Single Pulse Inductive Load Switching Energy
E
AS
470
mJ
(V = 25 Vdc, V = 5.0 V, I = 2.8 A, L = 120 mH, R = 25 W)
DD
GS
L
G
Load Dump Voltage (V = 0 and 10 V, R = 2.0 W, R = 4.5 W, t = 400 ms)
V
LD
55
V
GS
I
L
d
Operating Junction Temperature
T
−40 to 150
−55 to 150
°C
°C
J
Storage Temperature
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
+
I
D
DRAIN
I
G
VDS
GATE
+
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
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2
NCV8403
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(V = 0 Vdc, I = 250 mAdc)
V
(BR)DSS
42
40
46
45
51
51
Vdc
Vdc
GS
D
(V = 0 Vdc, I = 250 mAdc, T = −40°C to 150°C) (Note 3)
GS
D
J
Zero Gate Voltage Drain Current
(V = 32 Vdc, V = 0 Vdc)
I
mAdc
DSS
−
−
0.6
2.5
5.0
−
DS
GS
(V = 32 Vdc, V = 0 Vdc, T = 150°C) (Note 3)
DS
GS
J
Gate Input Current
I
−
50
125
mAdc
GSS
(V = 5.0 Vdc, V = 0 Vdc)
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
DS(on)
DS(on)
(V = V , I = 1.2 mAdc)
1.0
1.7
5.0
2.2
Vdc
DS
GS
D
Threshold Temperature Coefficient (Negative)
−
−
mV/°C
Static Drain−to−Source On−Resistance (Note 4)
R
R
mW
mW
V
(V = 10 Vdc, I = 3.0 Adc, T @ 25°C)
−
−
53
95
68
123
GS
D
J
J
(V = 10 Vdc, I = 3.0 Adc, T @ 150°C) (Note 3)
GS
D
Static Drain−to−Source On−Resistance (Note 4)
(V = 5.0 Vdc, I = 3.0 Adc, T @ 25°C)
−
−
63
105
76
135
GS
D
J
J
(V = 5.0 Vdc, I = 3.0 Adc, T @ 150°C) (Note 3)
GS
D
Source−Drain Forward On Voltage
(I = 7.0 A, V = 0 V)
V
−
0.95
1.1
SD
S
GS
SWITCHING CHARACTERISTICS (Note 3)
Turn−ON Time (10% V to 90% I )
ms
t
44
84
IN
D
ON
V
= 0 V to 5 V, V = 25 V
DD
IN
D
I
= 1.0 A, Ext R = 2.5 W
G
Turn−OFF Time (90% V to 10% I )
t
OFF
IN
D
Turn−ON Time (10% V to 90% I )
t
15
IN
D
ON
V
= 0 V to 10 V, V = 25 V
DD ,
IN
D
I
= 1.0 A, Ext R = 2.5 W
G
Turn−OFF Time (90% V to 10% I )
t
116
2.43
0.83
IN
D
OFF
V/ms
Slew−Rate ON (20% V to 50% V
)
−dV /dt
DS ON
DS
DS
V
= 0 to 10 V, V = 12 V,
DD
in
R = 4.7 W
L
Slew−Rate OFF (80% V to 50% V
)
dV /dt
DS OFF
DS
DS
SELF PROTECTION CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5)
J
Current Limit
V
= 5.0 V, V = 10 V
I
I
10
15
10
20
15
Adc
Adc
GS
DS
LIM
V
= 5.0 V, T = 150°C (Note 3)
5.0
GS
J
Current Limit
V
= 10 V, V = 10 V
12
8.0
17
13
22
18
GS
DS
LIM
V
= 10 V, T = 150°C (Note 3)
GS
J
Temperature Limit (Turn−off)
Thermal Hysteresis
V
= 5.0 Vdc (Note 3)
T
150
−
175
15
200
−
°C
°C
°C
°C
GS
LIM(off)
V
GS
= 5.0 Vdc
DT
LIM(on)
LIM(off)
Temperature Limit (Turn−off)
Thermal Hysteresis
V
= 10 Vdc (Note 3)
T
150
−
165
15
185
−
GS
V
GS
= 10 Vdc
DT
LIM(on)
GATE INPUT CHARACTERISTICS (Note 3)
Device ON Gate Input Current
I
mA
mA
mA
V
= 5 V I = 1.0 A
50
400
0.1
GON
GS
D
V
V
= 10 V I = 1.0 A
D
GS
Current Limit Gate Input Current
I
GCL
= 5 V, V = 10 V
GS
DS
V
= 10 V, V = 10 V
0.6
GS
DS
Thermal Limit Fault Gate Input Current
I
GTL
V
GS
= 5 V, V = 10 V
0.45
1.5
DS
V
= 10 V, V = 10 V
GS
DS
ESD ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 3)
J
Electro−Static Discharge Capability
Electro−Static Discharge Capability
3. Not subject to production testing.
Human Body Model (HBM)
Machine Model (MM)
ESD
ESD
4000
400
−
−
−
−
V
V
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
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3
NCV8403
TYPICAL PERFORMANCE CURVES
10
1000
T
Jstart
= 25°C
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 150°C
1
100
10
100
10
100
L (mH)
L (mH)
Figure 2. Single Pulse Maximum Switch−off
Figure 3. Single−Pulse Maximum Switching
Current vs. Load Inductance
Energy vs. Load Inductance
100
1000
T
Jstart
= 25°C
10
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 150°C
1
100
1
10
1
10
TIME IN CLAMP (ms)
TIME IN CLAMP (ms)
Figure 4. Single Pulse Maximum Inductive
Figure 5. Single−Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Switching Energy vs. Time in Clamp
25
20
15
10
20
15
10
6 V 7 V 8 V 9 V
−40°C
25°C
V
DS
= 10 V
10 V
5 V
4 V
100°C
150°C
T = 25°C
a
3 V
5
0
5
0
V
= 2.5 V
GS
0
1
2
3
4
5
1.0
1.5
2.0
2.5
(V)
3.0
3.5
4.0
V
DS
(V)
V
GS
Figure 6. On−state Output Characteristics
Figure 7. Transfer Characteristics
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4
NCV8403
TYPICAL PERFORMANCE CURVES
100
150
125
100
I
D
= 3 A
150°C, V = 5 V
GS
90
150°C
80
70
60
50
40
150°C, V = 10 V
GS
100°C, V = 5 V
GS
100°C, V = 10 V
GS
100°C
25°C, V = 5 V
GS
75
25°C, V = 10 V
GS
25°C
50
25
−40°C, V = 5 V
GS
30
20
−40°C
−40°C, V = 10 V
GS
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
V
GS
(V)
I (A)
D
Figure 8. RDS(on) vs. Gate−Source Voltage
Figure 9. RDS(on) vs. Drain Current
25
20
15
2.00
1.75
1.50
1.25
1.00
−40°C
25°C
I
D
= 5 A
100°C
150°C
V
GS
= 5 V
10
5
V
= 10 V
GS
0.75
0.50
V
DS
= 10 V
−40 −20
0
20
40
60
80 100 120 140
5
6
7
8
9
10
T (°C)
V
GS
(V)
Figure 10. Normalized RDS(on) vs. Temperature
Figure 11. Current Limit vs. Gate−Source
Voltage
25
100
10
V
GS
= 0 V
V
DS
= 10 V
V
GS
= 10 V
150°C
20
15
1
V
GS
= 5 V
0.1
100°C
25°C
0.01
0.001
10
5
−40°C
0.0001
0.00001
−40 −20
0
20 40
60
80 100 120 140
10
15
20
25
(V)
30
35
40
T (°C)
J
V
DS
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
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5
NCV8403
TYPICAL PERFORMANCE CURVES
1.2
1.1
1.0
0.9
0.8
1.0
I
V
= 1.2 mA
D
−40°C
25°C
0.9
0.8
0.7
= V
DS
GS
100°C
150°C
0.6
0.5
0.7
0.6
V
= 0 V
9
GS
−40 −20
0
20
40
60
80 100 120 140
1
2
3
4
5
6
7
8
10
T (°C)
I (A)
S
Figure 14. Normalized Threshold Voltage vs.
Temperature
Figure 15. Source−Drain Diode Forward
Characteristics
250
200
150
100
3.0
2.5
V
I
R
= 25 V
= 5 A
= 0 W
DD
V
I
R
= 25 V
= 5 A
= 0 W
DD
D
D
−dV /d
DS t(on)
G
G
2.0
1.5
1.0
t
d(off)
dV /d
DS t(off)
50
0
t
f
0.5
0
t
r
t
d(on)
3
4
5
6
7
8
9
10
3
4
5
6
7
8
9
10
V
GS
(V)
V
GS
(V)
Figure 16. Resistive Load Switching Time vs.
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
Gate−Source Voltage
2.50
2.25
2.00
1.75
1.50
1.25
1.00
100
75
−dV /d
, V = 10 V
DS t(on) GS
t
, V = 10 V
d(off) GS
V
= 25 V
= 5 A
DD
V
= 25 V
DD
I
D
t
, V = 5 V
d(off) GS
I = 5 A
D
50
t , V = 5 V
f
GS
t , V = 10 V
f
GS
t , V = 5 V
dV /d
DS t(off) GS
, V = 5 V
r
GS
25
0
t
, V = 5 V
t
, V = 10 V
d(on) GS
d(on) GS
dV /d
, V = 10 V
DS t(off) GS
t , V = 10 V
r
GS
0.75
0.50
−dV /d
, V = 5 V
DS t(on) GS
0
500
1000
(W)
1500
2000
0
500
1000
(W)
1500
2000
R
R
G
G
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
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6
NCV8403
TYPICAL PERFORMANCE CURVES
150
125
100
75
150
125
100
PCB Cu thickness, 1.0 oz
75
50
25
PCB Cu thickness, 2.0 oz
PCB Cu thickness, 1.0 oz
PCB Cu thickness, 2.0 oz
50
25
0
100 200
300
400
500
600
700
800
0
100 200
300
400
500
600
700
800
2
2
COPPER HEAT SPREADER AREA (mm )
COPPER HEAT SPREADER AREA (mm )
Figure 20. RqJA vs. Copper Area − SOT−223
Figure 21. RqJA vs. Copper Area − DPAK
1000
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 22. Transient Thermal Resistance − SOT−223 Version
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
0.01
Single Pulse
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 23. Transient Thermal Resistance − DPAK Version
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7
NCV8403
TEST CIRCUITS AND WAVEFORMS
RL
VIN
+
D
RG
VDD
−
DUT
G
S
IDS
Figure 24. Resistive Load Switching Test Circuit
90%
10%
90%
VIN
td(ON)
tr
td(OFF)
tf
10%
IDS
Figure 25. Resistive Load Switching Waveforms
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8
NCV8403
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
+
RG
VDD
DUT
G
−
S
tp
IDS
Figure 26. Inductive Load Switching Test Circuit
5 V
0 V
VIN
T
av
T
p
V
(BR)DSS
I
pk
VDD
VDS
IDS
V
DS(on)
0
Figure 27. Inductive Load Switching Waveforms
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9
NCV8403
ORDERING INFORMATION
Device
†
Package
Shipping
NCV8403STT1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
4000 / Tape & Reel
2500 / Tape & Reel
NCV8403STT3G
NCV8403DTRKG
SOT−223
(Pb−Free)
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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10
NCV8403
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE M
NOTES:
D
b1
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
2.00
7.30
10°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
H
E
E
1
3
b
e1
e
H
E
C
q
q
A
STYLE 3:
0.08 (0003)
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
A1
L1
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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11
NCV8403
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
RECOMMENDED FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
1.6
0.063
6.172
0.243
0.228
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC)
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NCV8403/D
相关型号：
NCV8403STT1G
Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223
ONSEMI
NCV8403STT3G
Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223
ONSEMI
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