NCV8405ADTRKG [ONSEMI]
Self-Protected Low Side Driver with Temperature and Current Limit; 与温度和电流限制自保护低端驱动器![NCV8405ADTRKG](http://pdffile.icpdf.com/pdf1/p00188/img/icpdf/NCV840_1063693_icpdf.jpg)
型号: | NCV8405ADTRKG |
厂家: | ![]() |
描述: | Self-Protected Low Side Driver with Temperature and Current Limit |
文件: | 总12页 (文件大小:146K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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NCV8405, NCV8405A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8405/A is a three terminal protected Low−Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain−to−Gate clamping for overvoltage
protection. This device is suitable for harsh automotive environments.
http://onsemi.com
V
(BR)DSS
R
TYP
I
D
MAX
DS(ON)
(Clamped)
Features
42 V
90 mW @ 10 V
6.0 A*
• Short−Circuit Protection
• Thermal Shutdown with Automatic Restart
• Overvoltage Protection
*Max current limit value is dependent on input
condition.
Drain
• Integrated Clamp for Inductive Switching
• ESD Protection
Overvoltage
Protection
Gate
Input
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
Source
MARKING
DIAGRAM
4
DRAIN
4
1
2
AYW
xxxxx G
G
3
SOT−223
CASE 318E
STYLE 3
1
2
3
SOURCE
GATE
DRAIN
4
2
1
YWW
xxxxxG
3
DPAK
CASE 369C
A
Y
= Assembly Location
= Year
W, WW = Work Week
xxxxx = V8405 or 8405A
G or G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
October, 2012 − Rev. 3
NCV8405/D
NCV8405, NCV8405A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
42
Unit
V
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
Gate−to−Source Voltage
V
DSS
DGR
(R = 1.0 MW)
G
V
42
V
V
GS
"14
V
Continuous Drain Current
I
D
Internally Limited
Power Dissipation − SOT−223 Version
P
D
W
@ T = 25°C (Note 1)
1.0
1.7
A
@ T = 25°C (Note 2)
A
@ T = 25°C (Note 1)
11.4
T
Power Dissipation − DPAK Version
@ T = 25°C (Note 1)
2.0
2.5
40
A
@ T = 25°C (Note 2)
A
@ T = 25°C (Note 1)
C
°C/W
Thermal Resistance − SOT−223 Version
Thermal Resistance − DPAK Version
R
130
72
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Tab Steady State (Note 1)
q
q
JA
JA
JT
R
11
R
q
60
50
3.0
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Case Steady State (Note 1)
R
q
JA
JA
JT
R
q
R
q
Single Pulse Drain−to−Source Avalanche Energy
(V = 40 V, V = 5.0 V, I = 2.8 A, L = 80 mH, R = 25 W, TJ = 25°C)
G(ext)
E
AS
275
mJ
DD
G
PK
Load Dump Voltage
V
= V + V (V = 0 and 10 V, R = 2.0 W, R = 6.0 W, t = 400 ms)
V
LD
53
V
LD
A
S
GS
I
L
d
Operating Junction Temperature
Storage Temperature
T
−40 to 150
−55 to 150
°C
°C
J
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
+
I
D
DRAIN
I
G
VDS
GATE
+
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
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2
NCV8405, NCV8405A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
= 0 V, I = 10 mA, T = 25°C
42
42
46
45
51
51
Drain−to−Source Breakdown Voltage
(Note 3)
V
V
GS
D
J
(BR)DSS
V
GS
= 0 V, I = 10 mA, T = 150°C
D J
(Note 5)
V
= 0 V, V = 32 V, T = 25°C
0.5
2.0
2.0
10
Zero Gate Voltage Drain Current
I
mA
mA
GS
DS
J
DSS
V
GS
= 0 V, V = 32 V, T = 150°C
DS
(Note 5)
J
Gate Input Current
V
DS
= 0 V, V = 5.0 V
I
GSSF
50
100
2.0
GS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS
= V , I = 150 mA
V
GS(th)
1.0
1.6
4.0
90
V
DS
D
Gate Threshold Temperature Coefficient
V
/T
−mV/°C
mW
GS(th)
J
V
= 10 V, I = 1.4 A, T = 25°C
100
190
Static Drain−to−Source On−Resistance
R
DS(on)
GS
D
J
V
GS
= 10 V, I = 1.4 A, T = 150°C
165
D
J
(Note 5)
V
= 5.0 V, I = 1.4 A, T = 25°C
105
185
120
210
GS
D
J
V
V
= 5.0 V, I = 1.4 A, T = 150°C
GS
D
J
(Note 5)
V
= 5.0 V, I = 0.5 A, T = 25°C
105
185
120
210
GS
D
J
= 5.0 V, I = 0.5 A, T = 150°C
GS
D
J
(Note 5)
Source−Drain Forward On Voltage
V
= 0 V, I = 7.0 A
V
t
1.05
V
ms
GS
S
SD
SWITCHING CHARACTERISTICS (Note 5)
Turn−ON Time (10% V to 90% I )
20
110
1.0
0.4
IN
D
ON
V
= 10 V, V = 12 V
DD
GS
D
I
= 2.5 A, R = 4.7 W
L
Turn−OFF Time (90% V to 10% I )
t
OFF
IN
D
Slew−Rate ON (70% V to 50% V
)
−dV /dt
DS ON
V/ms
DS
DS
V
= 10 V, V = 12 V,
DD
R = 4.7 W
L
GS
Slew−Rate OFF (50% V to 70% V
)
dV /dt
DS OFF
DS
DS
SELF PROTECTION CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4)
J
V
= 10 V, V = 5.0 V, T = 25°C
6.0
3.0
9.0
5.0
11
Current Limit
I
A
DS
GS
J
LIM
V
DS
= 10 V, V = 5.0 V, T = 150°C
8.0
GS
(Note 5)
J
V
= 10 V, V = 10 V, T = 25°C
7.0
4.0
10.5
7.5
13
10
DS
GS
J
V
DS
= 10 V, V = 10 V, T = 150°C
GS J
(Note 5)
Temperature Limit (Turn−off)
Thermal Hysteresis
V
= 5.0 V (Note 5)
T
150
150
180
15
200
185
°C
GS
LIM(off)
V
GS
= 5.0 V
DT
LIM(on)
LIM(off)
Temperature Limit (Turn−off)
Thermal Hysteresis
V
= 10 V (Note 5)
T
165
15
GS
V
GS
= 10 V
DT
LIM(on)
GATE INPUT CHARACTERISTICS (Note 5)
V
= 5 V I = 1.0 A
50
400
0.05
0.4
Device ON Gate Input Current
I
mA
mA
mA
GS
GS
D
GON
V
V
= 10 V I = 1.0 A
D
= 5 V, V = 10 V
Current Limit Gate Input Current
I
GCL
GS
DS
V
= 10 V, V = 10 V
GS
DS
V
GS
GS
= 5 V, V = 10 V
0.22
1.0
Thermal Limit Fault Gate Input Current
I
GTL
DS
V
= 10 V, V = 10 V
DS
ESD ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5)
J
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4000
400
V
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
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3
NCV8405, NCV8405A
TYPICAL PERFORMANCE CURVES
10
1000
T
Jstart
= 25°C
T
Jstart
= 25°C
100
T
Jstart
= 150°C
T
Jstart
= 150°C
1
10
10
10
100
10
5
100
L (mH)
L (mH)
Figure 2. Single Pulse Maximum Switch−off
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
Current vs. Load Inductance
1000
100
10
1
T
= 25°C
Jstart
100
T
= 150°C
Jstart
T
= 25°C
Jstart
T
= 150°C
Jstart
10
1
1
10
TIME IN CLAMP (ms)
TIME IN CLAMP (ms)
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
12
10
8
9 V
8 V
7 V
6 V
T = 25°C
A
V
DS
= 10 V
−40°C
14
12
10
8
25°C
10 V
100°C
4 V
3 V
6
5 V
6
150°C
4
4
2
V
= 2.5 V
2
GS
0
0
0
1
2
3
4
1
2
3
GS
4
5
V
DS
(V)
V
(V)
Figure 6. Output Characteristics
Figure 7. Transfer Characteristics
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4
NCV8405, NCV8405A
TYPICAL PERFORMANCE CURVES
300
250
200
150
100
50
210
150°C, I = 1.4 A
D
190
170
150
130
110
90
150°C, V = 10 V
GS
150°C, I = 0.5 A
150°C, V = 10 V
D
GS
100°C, V = 5 V
GS
100°C, V = 10 V
GS
100°C, I = 1.4 A
D
25°C, V = 5 V
GS
100°C, I = 0.5 A
D
25°C, V = 10 V
GS
25°C, I = 1.4 A
D
−40°C, V = 5 V
GS
70
−40°C, I = 1.4 A
D
−40°C, V = 10 V
25°C, I = 0.5 A
GS
D
−40°C, I = 0.5 A
D
50
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
3
4
5
6
7
8
9
10
V
GS
(V)
I (A)
D
Figure 8. RDS(on) vs. Gate−Source Voltage
Figure 9. RDS(on) vs. Drain Current
15
13
11
9
2.0
1.75
1.5
V
DS
= 10 V
I
D
= 1.4 A
−40°C
25°C
V
GS
= 5 V
1.25
1.0
100°C
150°C
7
V
= 10 V
GS
5
0.75
0.5
3
−40 −20
0
20
40
60
80 100 120 140
5
6
7
8
9
10
T (°C)
V
GS
(V)
Figure 10. Normalized RDS(on) vs. Temperature
Figure 11. Current Limit vs. Gate−Source
Voltage
10
1
V
GS
= 0 V
14
12
10
8
150°C
−40°C
V
= 10 V
GS
0.1
100°C
25°C
V
GS
= 5 V
0.01
6
V
= 10 V
DS
4
0.001
−40 −20
0
20 40 60 80 100 120 140 160
T (°C)
10
15
20
25
(V)
30
35
40
V
J
DS
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
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5
NCV8405, NCV8405A
TYPICAL PERFORMANCE CURVES
1.2
1.1
1
1.1
I
V
= 150 mA
D
1
0.9
0.8
0.7
0.6
0.5
0.4
= V
GS
DS
−40°C
25°C
100°C
0.9
0.8
0.7
0.6
150°C
V
= 0 V
9
GS
1
2
3
4
5
6
7
8
10
−40 −20
0
20
40
60
80 100 120 140
T (°C)
I (A)
S
Figure 14. Normalized Threshold Voltage vs.
Temperature
Figure 15. Body−Diode Forward
Characteristics
200
150
100
50
1.500
1.000
0.500
0.000
I
V
R
= 2.5 A
= 12 V
I
V
R
= 2.5 A
= 12 V
D
D
DD
DD
= 0 W
= 0 W
G
G
t
r
−dV /d
DS t(on)
t
d(off)
dV /d
DS t(off)
t
f
t
d(on)
0
3
4
5
6
7
8
9
10
3
4
5
6
7
8
9
10
V
GS
(V)
V
GS
(V)
Figure 16. Resistive Load Switching Time vs.
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Gate−Source Voltage
Voltage
125
100
75
50
25
0
1.5
1.3
1.1
0.9
0.7
0.5
0.3
0.1
−0.1
I
V
= 2.5 A
D
= 12 V
DD
−dV /d
, V = 10 V
DS t(on) GS
t
, (V = 10 V)
GS
d(off)
t , (V = 5 V)
f
GS
t , (V = 5 V)
r
GS
t , (V = 10 V)
dV /d
, V = 5 V
dV /d
, V = 10 V
f
GS
DS t(off) GS
DS t(off) GS
t
, (V = 5 V)
d(off)
GS
−dV /d
, V = 5 V
DS t(on) GS
t , (V = 5 V)
d(on) GS
t
, (V = 10 V)
GS
d(on)
t , (V = 10 V)
r
GS
I
= 2.5 A
D
V
= 12 V
DD
0
200 400 600 800 1000 1200 1400 1600 1800 2000
(W)
0
500
1000
R (W)
G
1500
200
R
G
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
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6
NCV8405, NCV8405A
TYPICAL PERFORMANCE CURVES
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH (sec)
Figure 20. Transient Thermal Resistance
140
120
100
80
T 25°C
A
qJA Curve with PCB cu thk 1.0 oz
60
qJA Curve with PCB cu thk 2.0 oz
40
20
0
0
100
200
300
400
500
600
700
2
COPPER HEAT SPREADER AREA (mm )
Figure 21. qJA vs. Copper
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7
NCV8405, NCV8405A
TEST CIRCUITS AND WAVEFORMS
RL
VIN
+
D
RG
VDD
−
DUT
G
S
IDS
Figure 22. Resistive Load Switching Test Circuit
90%
10%
90%
VIN
td(ON)
tr
td(OFF)
tf
10%
IDS
Figure 23. Resistive Load Switching Waveforms
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8
NCV8405, NCV8405A
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
+
RG
VDD
DUT
G
−
S
tp
IDS
Figure 24. Inductive Load Switching Test Circuit
5 V
0 V
VIN
T
av
T
p
V
(BR)DSS
I
pk
VDD
VDS
IDS
V
DS(on)
0
Figure 25. Inductive Load Switching Waveforms
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9
NCV8405, NCV8405A
ORDERING INFORMATION
Device
†
Package
Shipping
NCV8405STT1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
1000 / Tape & Reel
2500 / Tape & Reel
4000 / Tape & Reel
4000 / Tape & Reel
2500 / Tape & Reel
NCV8405ASTT1G
NCV8405DTRKG
NCV8405STT3G
NCV8405ASTT3G
NCV8405ADTRKG
SOT−223
(Pb−Free)
DPAK
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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10
NCV8405, NCV8405A
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
2.00
7.30
10°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
H
E
E
1
3
b
e1
e
0.069
0.276
−
0.078
0.287
10°
C
q
H
E
A
q
0.08 (0003)
STYLE 3:
PIN 1. GATE
2. DRAIN
A1
L
L1
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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11
NCV8405, NCV8405A
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
b2 0.030 0.045
b3 0.180 0.215
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
SEATING
PLANE
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
SOLDERING FOOTPRINT*
6.20
3.00
0.244
0.118
2.58
0.102
5.80
1.60
0.063
6.17
0.228
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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