NCV8406A [ONSEMI]
Self-Protected Low Side Driver;
| 型号： | NCV8406A |
| 厂家： | 
ONSEMI |
| 描述： | Self-Protected Low Side Driver |
| 文件： | 总12页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCV8406A, NCV8406B
Self-Protected Low Side
Driver with Temperature
and Current Limit
65 V, 7.0 A, Single N−Channel
www.onsemi.com
NCV8406A/B is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
V
I TYP
D
(Limited)
DSS
R
TYP
(Clamped)
DS(on)
65 V
210 mW
7.0 A
Features
Drain
• Short Circuit Protection
• Thermal Shutdown with Automatic Restart
• Over Voltage Protection
Overvoltage
Protection
Gate
Input
• Integrated Clamp for Inductive Switching
• ESD Protection
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• These Devices are Faster than the Rest of the NCV Devices
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
Source
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
4
DRAIN
Typical Applications
1
4
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
2
3
AYW
xxxxxG
G
SOT−223
CASE 318E
STYLE 3
1
2
3
SOURCE
GATE
DRAIN
4
2
1
YWW
xxxxxG
3
DPAK
CASE 369C
A
Y
= Assembly Location
= Year
W, WW = Work Week
xxxxx = 8406A or 8406B
G or G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2017 − Rev. 6
NCV8406/D
NCV8406A, NCV8406B
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
60
Unit
Vdc
Vdc
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
V
DSS
V
GS
"14
Drain Current
Continuous
I
D
Internally Limited
Total Power Dissipation − SOT−223 Version
P
W
W
D
@ T = 25°C (Note 1)
1.25
1.81
A
@ T = 25°C (Note 2)
A
Total Power Dissipation − DPAK Version
P
D
@ T = 25°C (Note 1)
1.31
2.31
A
@ T = 25°C (Note 2)
A
Thermal Resistance − SOT−223 Version
Junction−to−Soldering Point
°C/W
R
R
R
7.0
100
69
q
q
q
JS
JA
JA
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Thermal Resistance − DPAK Version
Junction−to−Soldering Point
°C/W
R
R
R
1.0
95
54
q
q
q
JS
JA
JA
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Single Pulse Inductive Load Switching Energy
E
AS
110
mJ
(Starting T = 25°C, V = 50 Vdc, V = 5.0 Vdc,
J
DD
GS
I = 2.1 Apk, L = 50 mH, R = 25 W)
L
G
Load Dump Voltage (V = 0 and 10 V, R = 2 W, R = 7 W, t = 400 ms)
V
T
75
V
GS
I
L
d
LD
Operating Junction Temperature Range
T
J
−40 to 150
−55 to 150
°C
°C
Storage Temperature Range
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (700 sq/mm) FR4 PCB, 1 oz cu.
+
I
D
DRAIN
I
G
VDS
GATE
+
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
www.onsemi.com
2
NCV8406A, NCV8406B
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
V
(BR)DSS
(V = 0 V, I = 2 mA)
60
−
65
22
30
70
V
GS
D
Zero Gate Voltage Drain Current
(V = 52 V, V = 0 V)
I
mA
DSS
100
100
DS
GS
Gate Input Current
(V = 5.0 V, V = 0 V)
I
mA
GSS
−
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
(V = V , I = 150 mA)
1.2
−
1.66
4.0
2.0
−
V
DS
GS
D
Threshold Temperature Coefficient
−mV/°C
Static Drain−to−Source On−Resistance (Note 3)
R
R
mW
mW
DS(on)
DS(on)
(V = 10 V, I = 2.0 A, T @ 25°C)
−
185
210
GS
D
J
Static Drain−to−Source On−Resistance (Note 3)
(V = 5.0 V, I = 2.0 A, T @ 25°C)
−
−
210
445
240
520
GS
D
J
(V = 5.0 V, I = 2.0 A, T @ 150°C)
GS
D
J
Source−Drain Forward On Voltage
(I = 7.0 A, V = 0 V)
V
SD
V
−
0.9
1.1
S
GS
SWITCHING CHARACTERISTICS (Note 6)
Turn−on Delay Time
R = 6.6 W, V = 0 to 10 V,
td
−
−
−
−
−
−
127
486
1600
692
79
−
−
−
−
−
−
ns
ns
L
in
(on)
V
= 13.8 V, I = 2.0 A, 10% V to 10% I
DD
D in
D
D
Turn−on Rise Time
Turn−off Delay Time
Turn−off Fall Time
Slew Rate ON
R = 6.6 W, V = 0 to 10 V,
t
L
in
rise
V
= 13.8 V, I = 2.0 A, 10% I to 90% I
DD
D
D
D
R = 6.6 W, V = 0 to 10 V,
td
ns
L
in
(off)
V
DD
= 13.8 V, I = 2.0 A, 90% V to 90% I
D
in
R = 6.6 W, V = 0 to 10 V,
t
fall
ns
L
in
V
= 13.8 V, I = 2.0 A, 90% I to 10% I
DD
D D D
R = 6.6 W, V = 0 to 10 V,
dV /dT
DS on
V/ms
V/ms
L
in
V
= 13.8 V, I = 2.0 A, 70% to 50% V
DD
D
DD
DD
Slew Rate OFF
R = 6.6 W, V = 0 to 10 V,
dV /dT
DS off
27
L
in
V
= 13.8 V, I = 2.0 A, 50% to 70% V
DD
D
SELF PROTECTION CHARACTERISTICS (Note 4)
Current Limit
V
DS
= 10 V, V = 5.0 V, T = 25°C (Note 5)
I
5.0
3.5
6.5
7.0
4.5
8.5
9.5
6.0
10.5
A
DS
GS
J
LIM
V
= 10 V, V = 5.0 V, T = 150°C (Notes 5, 6)
GS J
V
DS
= 10 V, V = 10 V, T = 25°C (Notes 5)
GS
GS
J
Temperature Limit (Turn−off)
Thermal Hysteresis
V
= 5.0 V (Note 6)
T
150
−
180
10
200
−
°C
°C
LIM(off)
V
GS
= 5.0 V
DT
LIM(on)
Temperature Limit (Turn−off)
Thermal Hysteresis
V
= 10 V (Note 6)
T
150
−
180
20
200
−
°C
GS
LIM(off)
V
GS
= 10 V
DT
°C
LIM(on)
g(fault)
Input Current during
Thermal Fault
V
V
= 0 V, V = 5.0 V, T = T > T
(Note 6)
(Note 6)
I
−
−
5.9
12.3
−
mA
DS
DS
GS
J
J
(fault)
(fault)
= 0 V, V = 10 V, T = T > T
GS
J
J
ESD ELECTRICAL CHARACTERISTICS
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
V
6000
500
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Current limit measured at 380 ms after gate pulse.
6. Not subject to production test.
www.onsemi.com
3
NCV8406A, NCV8406B
TYPICAL PERFORMANCE CURVES
10
1000
T
Jstart
= 25°C
100
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 150°C
10
1
10
100
10
100
L (mH)
L (mH)
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
Figure 3. Single−Pulse Maximum Switching
Energy vs. Load Inductance
10
1000
T
Jstart
= 25°C
T
Jstart
= 25°C
100
1
T
Jstart
= 150°C
T
Jstart
= 150°C
0.1
10
1
10
1
10
TIME IN CLAMP (ms)
TIME IN CLAMP (ms)
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single−Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
12
9
6 V 7 V 8 V 9 V
−40°C
10 V
12
10
8
V
DS
= 10 V
25°C
100°C
150°C
5 V
4 V
6
T = 25°C
a
6
3.3 V
3 V
4
3
0
2
0
V
= 2.5 V
GS
0
5
10
15
0
1
2
3
4
5
V
DS
(V)
V
(V)
GS
Figure 6. On−state Output Characteristics
Figure 7. Transfer Characteristics
www.onsemi.com
4
NCV8406A, NCV8406B
TYPICAL PERFORMANCE CURVES
500
600
550
500
450
400
350
300
250
200
150°C, V = 5 V
GS
ID = 2 A
450
ID = 0.5 A
400
150°C, V = 10 V
GS
100°C, V = 5 V
150°C
100°C
GS
350
300
250
100°C, V = 10 V
GS
25°C, V = 5 V
GS
200
150
25°C, V = 10 V
25°C
GS
−40°C, V = 5 V
GS
100
50
150
100
−40°C
−40°C, V = 10 V
GS
3
4
5
6
7
8
9
10
0.5 0.75
1
1.25 1.5 1.75
(A)
2
2.25 2.5 2.75
3
V
GS
(V)
I
D
Figure 8. RDS(on) vs. Gate−Source Voltage
Figure 9. RDS(on) vs. Drain Current
15
13
11
2.5
2.0
1.5
I
D
= 2 A
−40°C
25°C
V
GS
= 10 V
V
GS
= 5 V
9
7
100°C
1.0
0.5
150°C
5
3
V
DS
= 10 V
9
−40 −20
0
20
40
60
80 100 120 140
4
5
6
7
8
10
T (°C)
V
GS
(V)
Figure 10. Normalized RDS(on) vs. Temperature
Figure 11. Current Limit vs. Gate−Source
Voltage
15
13
11
9
1000
100
10
V
= 10 V
GS
V
DS
= 10 V
150°C
100°C
V
= 5 V
GS
1
0.1
0.01
25°C
V
GS
= 0 V
60
7
5
0.001
−40°C
0.0001
−40 −20
0
20
40
60
80 100 120 140
10
20
30
40
(V)
50
70
T (°C)
V
J
DS
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
www.onsemi.com
5
NCV8406A, NCV8406B
TYPICAL PERFORMANCE CURVES
1.2
1.1
1.0
0.9
0.8
1100
I
V
= 150 mA
D
1000
900
800
700
= V
GS
DS
−40°C
25°C
100°C
150°C
600
500
0.7
0.6
V
= 0 V
9
GS
−40 −20
0
20
40
60
80 100 120 140
1
2
3
4
5
6
7
8
10
T (°C)
I (A)
S
Figure 14. Normalized Threshold Voltage vs.
Temperature
Figure 15. Source−Drain Diode Forward
Characteristics
1600
1400
1200
1000
800
3400
3000
2600
2200
1800
t
, V = 10 V
V
= 13.8 V
= 2 A
= 0 W
d(off) GS
DD
t
d(off)
I
D
R
G
t , V = 5 V
r
GS
t
, V = 5 V
d(off) GS
t , V = 10 V
t
f
f
GS
1400
1000
600
t , V = 5 V
t
r
f
GS
t , V = 10 V
r
GS
400
600
t , V = 5 V
d(on) GS
t
d(on)
200
0
200
t , V = 10 V
d(on) GS
−200
3
4
5
6
7
8
9
10
0
500
1000
(W)
1500
2000
V
GS
(V)
R
G
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
Figure 17. Resistive Load Switching Time vs.
Gate Resistance
35
30
25
dV /d
, V = 5 V
DS t(off) GS
20
15
dV /d
, V = 10 V
DS t(off) GS
10
5
0
500
1000
(W)
1500
2000
R
G
Figure 18. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
www.onsemi.com
6
NCV8406A, NCV8406B
TYPICAL PERFORMANCE CURVES
110
110
100
90
100
90
80
70
60
PCB Cu thickness, 1.0 oz
PCB Cu thickness, 2.0 oz
80
70
60
50
40
PCB Cu thickness, 1.0 oz
PCB Cu thickness, 2.0 oz
50
40
100
200
300
400
500
600
100
200
300
400
500
600
2
2
COPPER HEAT SPREADER AREA (mm )
COPPER HEAT SPREADER AREA (mm )
Figure 19. RqJA vs. Copper Area − SOT−223
Figure 20. RqJA vs. Copper Area − DPAK
1000
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 21. Transient Thermal Resistance − SOT−223 Version
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
0.01
Single Pulse
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 22. Transient Thermal Resistance − DPAK Version
www.onsemi.com
7
NCV8406A, NCV8406B
TEST CIRCUITS AND WAVEFORMS
RL
VIN
+
−
D
RG
VDD
DUT
G
S
IDS
Figure 23. Resistive Load Switching Test Circuit
90%
10%
90%
VIN
td(ON)
tr
td(OFF)
tf
10%
IDS
Figure 24. Resistive Load Switching Waveforms
www.onsemi.com
8
NCV8406A, NCV8406B
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
+
−
RG
VDD
DUT
G
S
tp
IDS
Figure 25. Inductive Load Switching Test Circuit
5 V
0 V
VIN
T
av
T
p
V
(BR)DSS
I
pk
VDD
VDS
IDS
V
DS(on)
0
Figure 26. Inductive Load Switching Waveforms
www.onsemi.com
9
NCV8406A, NCV8406B
ORDERING INFORMATION
Device
†
Package
Shipping
NCV8406ASTT1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
4000 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
NCV8406ASTT3G
NCV8406ADTRKG
NCV8406BDTRKG
SOT−223
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
10
NCV8406A, NCV8406B
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
MIN
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
H
E
E
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
1
3
b
e1
e
L1
H
E
q
2.00
7.30
0.069
0.276
−
0.078
0.287
10°
C
q
A
0°
10°
0°
0.08 (0003)
STYLE 3:
PIN 1. GATE
2. DRAIN
A1
L
L1
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
11
NCV8406A, NCV8406B
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
A
D
E
C
A
b3
B
c2
4
2
L3
L4
Z
DETAIL A
H
1
3
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
NOTE 7
MIN
2.18
0.00
0.63
0.72
4.57
0.46
0.46
5.97
6.35
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
c
b2
e
BOTTOM VIEW
A
SIDE VIEW
b
b
b2 0.028 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
TOP VIEW
c
0.018 0.024
c2 0.018 0.024
Z
Z
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
H
GAUGE
PLANE
SEATING
PLANE
H
L
L1
L2
0.370 0.410
0.055 0.070
0.114 REF
L2
C
0.020 BSC
L3 0.035 0.050
L
BOTTOM VIEW
A1
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
L1
ALTERNATE
CONSTRUCTIONS
DETAIL A
ROTATED 905 CW
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
3. SOURCE
4. DRAIN
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NCV8406/D
◊
相关型号：
©2020 ICPDF网 联系我们和版权申明