NCV8405 [ONSEMI]
Self-Protected Low Side Driver with Temperature and Current Limit; 与温度和电流限制自保护低端驱动器
| 型号： | NCV8405 |
| 厂家： | 
ONSEMI |
| 描述： | Self-Protected Low Side Driver with Temperature and Current Limit |
| 文件： | 总10页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCV8405
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8405 is a three terminal protected Low−Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain−to−Gate clamping for overvoltage
protection. This device is suitable for harsh automotive environments.
http://onsemi.com
V
(BR)DSS
R
TYP
I
D
MAX
DS(ON)
(Clamped)
Features
42 V
90 mW @ 10 V
6.0 A*
• Short−Circuit Protection
• Thermal Shutdown with Automatic Restart
• Overvoltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
• dV/dt Robustness
*Max current limit value is dependent on input
condition.
Drain
Overvoltage
Protection
Gate
Input
• Analog Drive Capability (Logic Level Input)
• AEC−Q101 Qualified
ESD Protection
• NCV Prefix for Automotive and Other Applications Requiring Site
and Change Control
Temperature
Limit
Current
Limit
Current
Sense
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
Source
MARKING
DIAGRAM
DRAIN
4
4
SOT−223
CASE 318E
STYLE 3
AYW
8405 G
G
1
2
3
1
2
3
SOURCE
GATE
DRAIN
A
Y
= Assembly Location
= Year
W
= Work Week
8402 = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
NCV8405STT1G
SOT−223 1000/Tape & Reel
(Pb−Free)
NCV8405STT3G
SOT−223 4000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
December, 2009 − Rev. P0
NCV8405/D
NCV8405
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
Gate−to−Source Voltage
Symbol
Value
42
Unit
V
V
DSS
DGR
(R = 1.0 MW)
G
V
42
V
V
GS
"14
V
Continuous Drain Current
I
D
Internally Limited
Power Dissipation
@ T = 25°C (Note 1)
P
D
1.0
1.7
11.4
W
A
@ T = 25°C (Note 2)
A
@ T = 25°C (Note 1)
T
Thermal Resistance
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Tab Steady State (Note 1)
R
130
72
11
°C/W
q
q
JA
JA
JT
R
R
q
Single Pulse Drain−to−Source Avalanche Energy
E
AS
275
mJ
(V = 40 V, V = 5.0 V, I = 2.8 A, L = 80 mH, R = 25 W, TJ = 25°C)
DD
G
PK
G(ext)
Load Dump Voltage
V
= V + V (V = 0 and 10 V, R = 2.0 W, R = 6.0 W, t = 400 ms)
V
LD
53
V
LD
A
S
GS
I
L
d
Operating Junction Temperature
Storage Temperature
T
−40 to 150
−55 to 150
°C
°C
J
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
+
I
D
DRAIN
I
G
VDS
GATE
+
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
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2
NCV8405
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
= 0 V, I = 10 mA, T = 25°C
42
42
46
45
51
51
Drain−to−Source Breakdown Voltage
(Note 3)
V
V
GS
D
J
(BR)DSS
V
GS
= 0 V, I = 10 mA, T = 150°C
D J
(Note 5)
V
= 0 V, V = 32 V, T = 25°C
0.5
2.0
2.0
10
Zero Gate Voltage Drain Current
I
mA
mA
GS
DS
J
DSS
V
GS
= 0 V, V = 32 V, T = 150°C
DS
(Note 5)
J
Gate Input Current
V
DS
= 0 V, V = 5.0 V
I
GSSF
50
100
2.0
GS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS
= V , I = 150 mA
V
GS(th)
1.0
1.6
4.0
90
V
DS
D
Gate Threshold Temperature Coefficient
V
/T
−mV/°C
mW
GS(th)
J
V
= 10 V, I = 1.4 A, T = 25°C
100
190
Static Drain−to−Source On−Resistance
R
DS(on)
GS
D
J
V
GS
= 10 V, I = 1.4 A, T = 150°C
165
D
J
(Note 5)
V
= 5.0 V, I = 1.4 A, T = 25°C
105
185
120
210
GS
D
J
V
GS
= 5.0 V, I = 1.4 A, T = 150°C
D
J
(Note 5)
V
= 5.0 V, I = 0.5 A, T = 25°C
105
185
120
210
GS
D
J
V
GS
= 5.0 V, I = 0.5 A, T = 150°C
D
J
(Note 5)
Source−Drain Forward On Voltage
V
= 0 V, I = 7.0 A
V
t
1.05
V
ms
GS
S
SD
SWITCHING CHARACTERISTICS (Note 5)
Turn−ON Time (10% V to 90% I )
20
110
1.0
0.4
IN
D
ON
V
= 10 V, V = 12 V
DD
GS
D
I
= 2.5 A, R = 4.7 W
L
Turn−OFF Time (90% V to 10% I )
t
OFF
IN
D
Slew−Rate ON (70% V to 50% V
)
−dV /dt
DS ON
V/ms
DS
DS
V
= 10 V, V = 12 V,
DD
R = 4.7 W
L
GS
Slew−Rate OFF (50% V to 70% V
)
dV /dt
DS OFF
DS
DS
SELF PROTECTION CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4)
J
V
= 10 V, V = 5.0 V, T = 25°C
6.0
3.0
9.0
5.0
11
Current Limit
I
A
DS
GS
J
LIM
V
DS
= 10 V, V = 5.0 V, T = 150°C
8.0
GS
(Note 5)
J
V
= 10 V, V = 10 V, T = 25°C
7.0
4.0
10.5
7.5
13
10
DS
GS
J
V
DS
= 10 V, V = 10 V, T = 150°C
GS J
(Note 5)
Temperature Limit (Turn−off)
Thermal Hysteresis
V
= 5.0 V (Note 5)
T
150
150
180
15
200
185
°C
GS
LIM(off)
V
GS
= 5.0 V
DT
LIM(on)
LIM(off)
Temperature Limit (Turn−off)
Thermal Hysteresis
V
= 10 V (Note 5)
T
165
15
GS
V
GS
= 10 V
DT
LIM(on)
GATE INPUT CHARACTERISTICS (Note 5)
V
= 5 V I = 1.0 A
50
400
0.05
0.4
Device ON Gate Input Current
I
mA
mA
mA
GS
GS
D
GON
V
V
= 10 V I = 1.0 A
D
= 5 V, V = 10 V
Current Limit Gate Input Current
I
GCL
GS
DS
V
= 10 V, V = 10 V
GS
DS
V
GS
GS
= 5 V, V = 10 V
0.22
1.0
Thermal Limit Fault Gate Input Current
I
GTL
DS
V
= 10 V, V = 10 V
DS
ESD ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5)
J
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4000
400
V
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
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3
NCV8405
TYPICAL PERFORMANCE CURVES
10
1000
T
Jstart
= 25°C
T
Jstart
= 25°C
100
T
Jstart
= 150°C
T
Jstart
= 150°C
1
10
10
10
100
10
5
100
L (mH)
L (mH)
Figure 2. Single Pulse Maximum Switch−off
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
Current vs. Load Inductance
1000
10
T
= 25°C
Jstart
100
1
T
= 150°C
Jstart
T
= 25°C
Jstart
T
= 150°C
Jstart
0.1
10
1
1
10
TIME IN CLAMP (ms)
TIME IN CLAMP (ms)
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
12
10
8
9 V
8 V
7 V
6 V
T = 25°C
A
V
DS
= 10 V
−40°C
14
12
10
8
25°C
10 V
100°C
4 V
3 V
6
5 V
6
150°C
4
4
2
V
= 2.5 V
2
GS
0
0
0
1
2
3
4
1
2
3
GS
4
5
V
DS
(V)
V
(V)
Figure 6. Output Characteristics
Figure 7. Transfer Characteristics
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4
NCV8405
TYPICAL PERFORMANCE CURVES
300
250
200
150
100
50
210
150°C, I = 1.4 A
D
190
170
150
130
110
90
150°C, V = 10 V
GS
150°C, I = 0.5 A
150°C, V = 10 V
D
GS
100°C, V = 5 V
GS
100°C, V = 10 V
GS
100°C, I = 1.4 A
D
25°C, V = 5 V
GS
100°C, I = 0.5 A
D
25°C, V = 10 V
GS
25°C, I = 1.4 A
D
−40°C, V = 5 V
GS
70
−40°C, I = 1.4 A
D
−40°C, V = 10 V
25°C, I = 0.5 A
GS
D
−40°C, I = 0.5 A
D
50
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
3
4
5
6
7
8
9
10
V
GS
(V)
I (A)
D
Figure 8. RDS(on) vs. Gate−Source Voltage
Figure 9. RDS(on) vs. Drain Current
15
13
11
9
2.0
1.75
1.5
V
DS
= 10 V
I
D
= 1.4 A
−40°C
25°C
V
GS
= 5 V
1.25
1.0
100°C
150°C
7
V
= 10 V
GS
5
0.75
0.5
3
−40 −20
0
20
40
60
80 100 120 140
5
6
7
8
9
10
T (°C)
V
GS
(V)
Figure 10. Normalized RDS(on) vs. Temperature
Figure 11. Current Limit vs. Gate−Source
Voltage
10
1
V
GS
= 0 V
14
12
10
8
150°C
−40°C
V
= 10 V
GS
0.1
100°C
25°C
V
GS
= 5 V
0.01
6
V
= 10 V
DS
4
0.001
−40 −20
0
20 40 60 80 100 120 140 160
T (°C)
10
15
20
25
(V)
30
35
40
V
J
DS
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
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5
NCV8405
TYPICAL PERFORMANCE CURVES
1.2
1.1
1
1.1
I
V
= 150 mA
D
1
0.9
0.8
0.7
0.6
0.5
0.4
= V
GS
DS
−40°C
25°C
100°C
0.9
0.8
0.7
0.6
150°C
V
= 0 V
9
GS
1
2
3
4
5
6
7
8
10
−40 −20
0
20
40
60
80 100 120 140
T (°C)
I (A)
S
Figure 14. Normalized Threshold Voltage vs.
Temperature
Figure 15. Body−Diode Forward
Characteristics
200
150
100
50
1.500
1.000
0.500
0.000
I
V
R
= 2.5 A
= 12 V
I
V
R
= 2.5 A
= 12 V
D
D
DD
DD
= 0 W
= 0 W
G
G
t
r
−dV /d
DS t(on)
t
d(off)
dV /d
DS t(off)
t
f
t
d(on)
0
3
4
5
6
7
8
9
10
3
4
5
6
7
8
9
10
V
GS
(V)
V
GS
(V)
Figure 16. Resistive Load Switching Time vs.
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Gate−Source Voltage
Voltage
125
100
75
50
25
0
1.5
1.3
1.1
0.9
0.7
0.5
0.3
0.1
−0.1
I
V
= 2.5 A
D
= 12 V
DD
−dV /d
, V = 10 V
DS t(on) GS
t
, (V = 10 V)
GS
d(off)
t , (V = 5 V)
f
GS
t , (V = 5 V)
r
GS
t , (V = 10 V)
dV /d
, V = 5 V
dV /d
, V = 10 V
f
GS
DS t(off) GS
DS t(off) GS
t
, (V = 5 V)
d(off)
GS
−dV /d
, V = 5 V
DS t(on) GS
t , (V = 5 V)
d(on) GS
t
, (V = 10 V)
GS
d(on)
t , (V = 10 V)
r
GS
I
= 2.5 A
D
V
= 12 V
DD
0
200 400 600 800 1000 1200 1400 1600 1800 2000
(W)
0
500
1000
R (W)
G
1500
200
R
G
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
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6
NCV8405
TYPICAL PERFORMANCE CURVES
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH (sec)
Figure 20. Transient Thermal Resistance
140
120
100
80
T 25°C
A
qJA Curve with PCB cu thk 1.0 oz
60
qJA Curve with PCB cu thk 2.0 oz
40
20
0
0
100
200
300
400
500
600
700
2
COPPER HEAT SPREADER AREA (mm )
Figure 21. qJA vs. Copper
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7
NCV8405
TEST CIRCUITS AND WAVEFORMS
RL
VIN
+
D
RG
VDD
−
DUT
G
S
IDS
Figure 22. Resistive Load Switching Test Circuit
90%
10%
90%
VIN
td(ON)
tr
td(OFF)
tf
10%
IDS
Figure 23. Resistive Load Switching Waveforms
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8
NCV8405
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
+
RG
VDD
DUT
G
−
S
tp
IDS
Figure 24. Inductive Load Switching Test Circuit
5 V
0 V
VIN
T
av
T
p
V
(BR)DSS
I
pk
VDD
VDS
IDS
V
DS(on)
0
Figure 25. Inductive Load Switching Waveforms
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9
NCV8405
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
D
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
b1
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
DIM
A
A1
b
b1
c
D
E
e
e1
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
2.00
7.30
10°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
4
2
H
E
E
1
3
b
e1
e
H
E
q
C
q
STYLE 3:
PIN 1. GATE
2. DRAIN
A
0.08 (0003)
3. SOURCE
4. DRAIN
A1
L1
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NCV8405/D
相关型号：
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