NB3V60113GV3 [ONSEMI]

1.8 V 12.288 MHz OmniClock Generator;
NB3V60113GV3
型号: NB3V60113GV3
厂家: ONSEMI    ONSEMI
描述:

1.8 V 12.288 MHz OmniClock Generator

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NB3V60113GV3  
1.8 V 12.288 MHz OmniClock  
Generator with Single Ended  
(LVCMOS) Output  
The NB3V60113GV3, which is a member of the OmniClock family,  
is a low power PLL−based clock generator. The device accepts a  
6.144 MHz single ended (LVCMOS) reference clock as input. It  
generates one single ended (LVCMOS) output of 12.288 MHz. The  
device can be powered down using the Power Down pin (PD#).  
www.onsemi.com  
Features  
Member of the OmniClock Family of Programmable Clock  
Generators  
WDFN8  
CASE 511AT  
Operating Power Supply: 1.8 V 0.1 V  
MARKING DIAGRAM  
I/O Standards  
1
Input: 6.144 MHz Reference Clock (LVCMOS)  
Output: 12.288 MHz (LVCMOS)  
V3MG  
G
Output Drive Current for Single Ended Output: 8 mA  
Power Saving Mode through Power Down Pin  
Temperature Range −40°C to 85°C  
Packaged in 8−Pin WDFN  
V3 = Specific Device Code  
M
G
= Date Code  
= Pb−Free Device  
(Note: Microdot may be in either location)  
These are Pb−Free Devices  
Typical Application  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of  
this data sheet.  
Audio Systems (Lightning Audio Module)  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
October, 2016 − Rev. 0  
NB3V60113GV3/D  
NB3V60113GV3  
BLOCK DIAGRAM  
PD#  
VDD  
Crystal/Clock Control  
Output control  
Configuration  
Memory  
Frequency  
and SS  
Output  
CMOS  
Buffer  
12.288 MHz  
Divider  
PLL Block  
XIN/CLKIN  
6.144 MHz  
Clock Buffer/  
Phase  
Crystal  
Oscillator and  
AGC  
Charge  
VCO  
Pump  
Detector  
NC  
XOUT  
Feedback  
Divider  
NC  
GND  
Figure 1. Simplified Block Diagram  
PIN FUNCTION DESCRIPTION  
XIN/CLKIN  
6.144 MHz  
1
2
3
4
8
7
6
5
NC  
XOUT  
VDD  
NC  
NB3V60113GV3  
PD#  
CLK0  
12.288 MHz  
GND  
Figure 2. Pin Connections (Top View) – WDFN8  
www.onsemi.com  
2
NB3V60113GV3  
Table 1. PIN DESCRIPTION  
Pin No.  
Pin Name  
XIN/CLKIN  
XOUT  
Pin Type  
Input  
Description  
1
2
3
6.144 MHz single−ended external reference input clock (LVCMOS)  
Output  
Input  
Crystal output. Float this pin when external reference clock is connected at XIN  
PD#  
Asynchronous LVCMOS input. Active Low Master Reset to disable the device and set  
outputs Low. Internal pull−down resistor. This pin needs to be pulled High for normal op-  
eration of the chip.  
4
5
6
7
8
GND  
CLK0  
NC  
Ground  
Output  
Power supply ground  
12.288 MHz Single−ended (LVCMOS) output  
No Connection. Not to be connected to any circuit  
1.8 V Power Supply  
VDD  
NC  
Power  
No Connection. Not to be connected to any circuit  
Table 2. POWER DOWN FUNCTION TABLE  
PD#  
0
Function  
Device Powered Down  
Device Powered Up  
1
NOTE: PD# has internal pull down resistor.  
Table 3. ATTRIBUTES  
Characteristic  
Value  
ESD Protection Human Body Model  
2 kV  
50 kW  
Internal Input Default State Pull up/ down Resistor  
Moisture Sensitivity, Indefinite Time Out of Dry Pack (Note 1)  
Flammability Rating Oxygen Index: 28 to 34  
Transistor Count  
MSL1  
UL 94 V−0 @ 0.125 in  
130 k  
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test  
1. For additional information, see Application Note AND8003/D.  
Table 4. ABSOLUTE MAXIMUM RATING (Note 2)  
Symbol  
Parameter  
Positive power supply with respect to Ground  
Input Voltage with respect to chip ground  
Operating Ambient Temperature Range (Industrial Grade)  
Storage temperature  
Rating  
−0.5 to +4.6  
−0.5 to VDD + 0.5  
−40 to +85  
−65 to +150  
265  
Unit  
V
VDD  
V
T
V
I
°C  
°C  
°C  
A
T
STG  
SOL  
T
Max. Soldering Temperature (10 sec)  
q
Thermal Resistance (Junction−to−ambient)  
(Note 3)  
0 lfpm  
500 lfpm  
129  
84  
°C/W  
°C/W  
JA  
q
Thermal Resistance (Junction−to−case)  
Junction temperature  
35 to 40  
125  
°C/W  
°C  
JC  
T
J
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If  
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.  
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power). ESD51.7 type board. Back side Copper heat spreader area 100 sq mm, 2 oz  
(0.070 mm) copper thickness.  
www.onsemi.com  
3
 
NB3V60113GV3  
Table 5. RECOMMENDED OPERATION CONDITIONS  
Symbol  
Parameter  
Condition  
Min  
Typ  
Max  
1.9  
15  
Unit  
V
V
DD  
Core Power Supply Voltage  
1.8 V operation  
1.7  
1.8  
CL  
Clock output load capacitance for  
LVCMOS clock  
pF  
fclkin  
Reference Clock Frequency  
Single ended Clock input (LVCMOS)  
6.144  
4.5  
MHz  
pF  
C
XIN / XOUT pin stray Capacitance  
X
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
Table 6. DC ELECTRICAL CHARACTERISTICS (V = 1.8 V 0.1 V; GND = 0 V, T = −40°C to +85°C)  
DD  
A
Symbol  
Parameter  
Power Supply current  
Condition  
fout = 12.288 MHz  
Min  
Typ  
Max  
Unit  
mA  
mA  
I
13  
DD_1.8 V  
I
Power Down Supply Current  
Input HIGH Voltage  
PD# is Low to make all outputs OFF  
20  
PD  
V
IH  
Pin XIN/CLKIN  
Pin PD#  
0.65 V  
V
V
DD  
DD  
DD  
0.85 V  
V
DD  
V
Input LOW Voltage  
Input Capacitance  
Pin XIN/CLKIN  
Pin PD#  
0
0
0.35 V  
0.15 V  
6
V
IL  
DD  
DD  
Cin  
LVCMOS OUTPUT  
Pin PD#  
4
pF  
V
Output HIGH Voltage  
Output LOW Voltage  
V
V
= 1.8 V  
= 1.8 V  
I
= 8 mA 0.75*V  
= 8 mA  
V
V
OH  
DD  
OH  
DD  
V
I
0.25*V  
DD  
OL  
DD  
OL  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
Table 7. AC ELECTRICAL CHARACTERISTICS (V = 1.8 V 0.1 V, GND = 0 V, T = −40°C to +85°C)  
DD  
A
Symbol  
Parameter  
Conditions  
Min  
Typ  
12.288  
3.0  
Max  
Unit  
MHz  
ms  
fout  
Single Ended Output Frequency  
Stabilization time from Power−up  
Stabilization time from Power Down  
t
V
DD  
= 1.8 V  
PU  
PD  
t
Time from falling edge on PD# pin to  
tri−stated outputs (Asynchronous)  
3.0  
ms  
Eppm  
Synthesis Error  
0
ppm  
ps  
SINGLE ENDED OUTPUT (V = 1.8 V 0.1 V; T = −40°C to 85°C)  
DD  
A
t
Period Jitter Peak−to−Peak  
Configuration Dependent  
200  
200  
1
JITTER−1.8 V  
Cycle−Cycle Peak Jitter  
Rise/Fall Time  
Configuration Dependent  
t / t  
Measured between 20% to 80% with  
ns  
r
f 1.8 V  
15 pF load, f = 12.288 MHz,  
out  
V
DD  
= 1.8 V  
t
Output Clock Duty Cycle  
V
= 1.8 V;  
%
DC  
DD  
Duty Cycle of Ref clock is 50%  
PLL Clock  
45  
50  
55  
www.onsemi.com  
4
NB3V60113GV3  
PARAMETER MEASUREMENT TEST CIRCUIT  
Measurement  
Equipment  
Hi−Z Probe  
LVCMOS Clock  
CL  
Figure 3. LVCMOS Clock Parameter Measurement  
TIMING MEASUREMENT DEFINITIONS  
t
2
t
= 100 * t / t  
1 2  
DC  
t
1
80% of VDD  
50% of VDD  
20% of VDD  
GND  
LVCMOS  
Clock Output  
t
t
r
f
Figure 4. LVCMOS Measurement for AC Parameters  
t
period−jitter  
50% of CLK Swing  
Clock  
Output  
t
t
(N+1)cycle  
Ncycle  
50% of CLK Swing  
Clock  
Output  
t
= t  
− t  
CTC−jitter  
(N+1)cycle Ncycle (over 1000 cycles)  
Figure 5. Period and Cycle−Cycle Jitter Measurement  
www.onsemi.com  
5
NB3V60113GV3  
1.8 V  
0.1 mF  
0.01 mF  
VDD  
Reference  
Clock Input  
12.288 MHz single  
ended clock output  
XIN / CLKIN  
XOUT  
6.144 MHz  
CLK0  
NB3V60113GV3  
VDD  
PD#  
GND  
Figure 6. Typical Application Setup  
ORDERING INFORMATION  
Device  
Case  
Package  
Shipping  
NB3V60113GV3MTR2G  
511AT  
DFN−8  
(Pb−Free)  
3000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
NOTE: Please contact your ON Semiconductor sales representative for information on un−programmed versions of this device.  
www.onsemi.com  
6
NB3V60113GV3  
PACKAGE DIMENSIONS  
WDFN8 2x2, 0.5P  
CASE 511AT  
ISSUE O  
L
L
D
A
B
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.15 AND 0.30 MM FROM TERMINAL TIP.  
L1  
PIN ONE  
REFERENCE  
DETAIL A  
E
ALTERNATE TERMINAL  
CONSTRUCTIONS  
MILLIMETERS  
DIM  
A
MIN  
0.70  
0.00  
MAX  
0.80  
0.05  
2X  
0.10  
C
A1  
A3  
b
0.20 REF  
2X  
0.10  
C
0.20  
0.30  
EXPOSED Cu  
MOLD CMPD  
TOP VIEW  
2.00 BSC  
2.00 BSC  
0.50 BSC  
D
E
e
DETAIL B  
L
0.40  
---  
0.50  
0.60  
0.15  
0.70  
0.05  
C
L1  
L2  
DETAIL B  
ALTERNATE  
CONSTRUCTIONS  
A
8X  
0.05  
C
A1  
A3  
RECOMMENDED  
SOLDERING FOOTPRINT*  
SEATING  
PLANE  
C
SIDE VIEW  
7X  
0.78  
PACKAGE  
OUTLINE  
e/2  
e
DETAIL A  
7X  
L
4
1
L2  
2.30  
0.88  
1
8
5
8X  
b
0.50  
PITCH  
8X  
0.30  
0.10  
C
A
B
DIMENSIONS: MILLIMETERS  
NOTE 3  
0.05  
C
BOTTOM VIEW  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
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NB3V60113GV3/D  

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