MC74VHC157DTR2 [ONSEMI]

Quad 2--Channel Multiplexer; 四2 - 通道多路复用器
MC74VHC157DTR2
型号: MC74VHC157DTR2
厂家: ONSEMI    ONSEMI
描述:

Quad 2--Channel Multiplexer
四2 - 通道多路复用器

解复用器 逻辑集成电路 光电二极管
文件: 总7页 (文件大小:232K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MC74VHC157  
Quad 2--Channel Multiplexer  
The MC74VHC157 is an advanced high--speed CMOS quad  
2--channel multiplexer, fabricated with silicon gate CMOS  
technology. It achieves high--speed operation similar to equivalent  
Bipolar--Schottky TTL, while maintaining CMOS low--power  
dissipation.  
It consists of four 2--input digital multiplexers with common select  
(S) and enable (E) inputs. When E is held High, selection of data is  
inhibited and all the outputs go Low.  
The select decoding determines whether the A or B inputs get routed  
to the corresponding Y outputs.  
The internal circuit is composed of three stages, including a buffer  
output which provides high noise immunity and stable output. The  
inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems  
to 3 V systems.  
http://onsemi.com  
MARKING  
DIAGRAMS  
16  
9
8
VHC157  
AWLYYWW  
SOIC--16  
D SUFFIX  
CASE 751B  
1
High Speed: tPD = 4.1 ns (Typ) at VCC = 5 V  
Low Power Dissipation: ICC = 4 mA (Max) at TA = 25°C  
High Noise Immunity: VNIH = VNIL = 28% VCC  
Power Down Protection Provided on Inputs  
Balanced Propagation Delays  
16  
9
VHC  
157  
ALYW  
TSSOP--16  
DT SUFFIX  
CASE 948F  
1
Designed for 2 V to 5.5 V Operating Range  
Low Noise: VOLP = 0.8 V (Max)  
8
Pin and Function Compatible with Other Standard Logic Families  
Latchup Performance Exceeds 300 mA  
16  
9
ESD Performance: HBM > 2000 V; Machine Model > 200 V  
Chip Complexity: 82 FETs  
74VHC157  
ALYW  
SOIC EIAJ--16  
M SUFFIX  
CASE 966  
These devices are available in Pb--free package(s). Specifications herein  
apply to both standard and Pb--free devices. Please see our website at  
www.onsemi.com for specific Pb--free orderable part numbers, or  
contact your local ON Semiconductor sales office or representative.  
1
8
A
L, WL  
Y, YY  
= Assembly Location  
= Wafer Lot  
= Year  
S
1
2
16  
15  
V
E
CC  
W, WW = Work Week  
A0  
B0  
Y0  
A3  
ORDERING INFORMATION  
3
4
14  
13  
Device  
Package  
Shipping  
B3  
Y3  
A2  
B2  
Y2  
MC74VHC157D  
MC74VHC157DR2  
MC74VHC157DT  
SOIC--16  
48 Units/Rail  
5
12  
11  
A1  
SOIC--16 2500 Units/Reel  
TSSOP--16 96 Units/Rail  
6
B1  
MC74VHC157DTR2 TSSOP--16 2500 Units/Reel  
SOIC  
7
8
10  
9
Y1  
MC74VHC157M  
50 Units/Rail  
EIAJ--16  
GND  
SOIC  
EIAJ--16  
MC74VHC157MEL  
2000 Units/Reel  
Figure 1. Pin Assignment  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 -- Rev. 5  
MC74VHC157/D  
MC74VHC157  
2
A0  
B0  
A1  
B1  
4
7
3
Y0  
Y1  
5
6
NIBBLE  
INPUTS  
DATA  
OUTPUTS  
11  
10  
14  
13  
A2  
B2  
A3  
B3  
9
Y2  
Y3  
12  
15  
1
E
S
Figure 2. Expanded Logic Diagram  
15  
1
E
S
EN  
G1  
2
3
5
6
MUX  
A0  
B0  
A1  
B1  
1
1
4
7
Y0  
Y1  
Y2  
Y3  
11  
10  
14  
13  
A2  
B2  
9
A3  
B3  
12  
Figure 3. IEC Logic Symbol  
FUNCTION TABLE  
Inputs  
Outputs  
Y0 -- Y3  
E
S
H
L
L
X
L
H
L
A0--A3  
B0--B3  
A0 -- A3, B0 -- B3 = the levels  
of the respective Data--Word  
Inputs.  
http://onsemi.com  
2
MC74VHC157  
MAXIMUM RATINGS (Note 1)  
Symbol  
Parameter  
Value  
Unit  
V
V
V
V
I
DC Supply Voltage  
0.5 to +7.0  
CC  
I
DC Input Voltage  
0.5 to V +7.0  
V
CC  
DC Output Voltage  
0.5 to V +7.0  
V
O
CC  
DC Input Diode Current  
DC Output Diode Current  
DC Output Sink Current  
DC Supply Current per Supply Pin  
Storage Temperature Range  
V < GND  
20  
mA  
mA  
mA  
mA  
_C  
IK  
I
I
I
I
V
< GND  
O
±20  
OK  
±25  
O
±100  
CC  
T
T
T
65 to +150  
STG  
L
Lead Temperature, 1 mm from Case for 10 Seconds  
Junction Temperature under Bias  
Thermal Resistance  
260  
_C  
+150  
_C  
J
θ
JA  
250  
250  
_C/W  
mW  
P
Power Dissipation in Still Air at 85_C  
Moisture Sensitivity  
D
MSL  
Level 1  
F
R
Flammability Rating  
Oxygen Index: 30% -- 35%  
UL--94--VO (0.125 in)  
V
ESD Withstand Voltage  
Human Body Model (Note 2)  
Machine Model (Note 3)  
Charged Device Model (Note 4)  
>2000  
>200  
N/A  
V
ESD  
I
Latch--Up Performance  
Above V and Below GND at 85_C (Note 5)  
±500  
mA  
Latch--Up  
CC  
1. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these  
conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum--rated  
conditions is not implied.  
2. Tested to EIA/JESD22--A114--A.  
3. Tested to EIA/JESD22--A115--A.  
4. Tested to JESD22--C101--A.  
5. Tested to EIA/JESD78.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Characteristics  
Min  
2.0  
0
Max  
5.5  
Unit  
V
V
V
V
T
DC Supply Voltage  
DC Input Voltage  
DC Output Voltage  
CC  
IN  
(Note 6)  
5.5  
V
0
V
V
OUT  
CC  
Operating Temperature Range, all Package Types  
Input Rise or Fall Time  
55  
125  
_C  
ns/V  
A
t , t  
r
V
V
= 3.3 V ± 0.3 V  
= 5.0 V ± 0.5 V  
0
0
100  
20  
f
CC  
CC  
6. Unused inputs may not be left open. All inputs must be tied to a high--logic voltage level or a low--logic input voltage level.  
DEVICE JUNCTION TEMPERATURE VERSUS  
TIME TO 0.1% BOND FAILURES  
FAILURE RATE OF PLASTIC = CERAMIC  
UNTIL INTERMETALLICS OCCUR  
Junction  
Temperature _C  
Time, Hours  
1,032,200  
419,300  
178,700  
79,600  
Time, Years  
117.8  
47.9  
80  
90  
100  
110  
120  
130  
140  
20.4  
1
9.4  
37,000  
4.2  
1
10  
100  
1000  
TIME, YEARS  
17,800  
2.0  
8,900  
1.0  
Figure 4. Failure Rate vs. Time Junction Temperature  
http://onsemi.com  
3
MC74VHC157  
DC CHARACTERISTICS (Voltages Referenced to GND)  
V
T
A
= 25_C  
T
A
85_C  
-- 5 5 _C T 125_C  
A
CC  
Symbol  
Parameter  
Condition  
(V)  
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Unit  
V
V
V
High--Level  
2.0  
1.5  
1.5  
1.5  
V
IH  
Input Voltage  
3.0 to 5.5 0.7 V  
0.7 V  
0.7 V  
CC  
CC  
CC  
Low--Level  
Input Voltage  
2.0  
3.0 to 5.5  
0.5  
0.5  
0.5  
V
V
IL  
0.3 V  
0.3 V  
0.3 V  
CC  
CC  
CC  
High--Level  
Output Voltage  
V
OH  
= V or V  
2.0  
3.0  
4.5  
1.9  
2.9  
4.4  
2.0  
3.0  
4.5  
1.9  
2.9  
4.4  
1.9  
2.9  
4.4  
OH  
IN  
IH  
IL  
IL  
IL  
IL  
I
= --50 mA  
V
= V or V  
IN  
IH  
I
= --4 mA  
= --8 mA  
3.0  
4.5  
2.58  
3.94  
2.48  
3.8  
2.34  
3.66  
OH  
I
OH  
V
Low--Level  
Output Voltage  
V
OL  
= V or V  
2.0  
3.0  
4.5  
0.0  
0.0  
0.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
OL  
IN  
IH  
I
= 50 mA  
V
= V or V  
IN  
IH  
I
= 4 mA  
= 8 mA  
3.0  
4.5  
0.36  
0.36  
0.44  
0.44  
0.52  
0.52  
OH  
I
OH  
I
Input Leakage  
Current  
V
= 5.5 V or  
0 to 5.5  
±0.1  
±1.0  
±1.0  
mA  
mA  
IN  
IN  
GND  
I
Quiescent  
Supply Current  
V
IN  
= V or  
5.5  
4.0  
40.0  
40.0  
CC  
CC  
GND  
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)  
r
f
T
A
= 25_C  
T
A
85_C  
-- 5 5 _C T 125_C  
A
Symbol  
Characteristic  
Test Conditions  
Min  
Typ  
Max  
Typ  
Max  
Typ  
Max  
Unit  
t
t
,
,
,
Propagation Delay,  
A to B to Y  
V
V
V
V
V
V
= 3.3 ± 0.3 V  
= 5.0 ± 0.5 V  
= 3.3 ± 0.3 V  
= 5.0 ± 0.5 V  
= 3.3 ± 0.3 V  
= 5.0 ± 0.5 V  
C
C
= 15 pF  
= 50 pF  
6.2  
8.7  
9.7  
13.2  
1.0  
1.0  
11.5  
15.0  
1.0  
1.0  
11.5  
15.0  
ns  
PLH  
PHL  
CC  
CC  
CC  
CC  
CC  
CC  
L
L
C
L
C
L
= 15 pF  
= 50 pF  
4.1  
5.6  
6.4  
8.4  
1.0  
1.0  
7.5  
9.5  
1.0  
1.0  
7.5  
9.5  
t
t
Propagation Delay,  
S to Y  
C
L
C
L
= 15 pF  
= 50 pF  
8.4  
10.9  
13.2  
16.7  
1.0  
1.0  
15.5  
19.0  
1.0  
1.0  
15.5  
19.0  
ns  
ns  
PLH  
PHL  
C
L
C
L
= 15 pF  
= 50 pF  
5.3  
6.8  
8.1  
10.1  
1.0  
1.0  
9.5  
11.5  
1.0  
1.0  
9.5  
11.5  
t
t
Propagation Delay,  
E to Y  
C
L
C
L
= 15 pF  
= 50 pF  
8.7  
11.2  
13.6  
17.1  
1.0  
1.0  
16.0  
19.5  
1.0  
1.0  
16.0  
19.5  
PLH  
PHL  
C
L
C
L
= 15 pF  
= 50 pF  
5.6  
7.1  
8.6  
10.6  
1.0  
1.0  
10.0  
12.0  
1.0  
1.0  
10.0  
12.0  
C
C
Input Capacitance  
4
10  
10  
10  
pF  
pF  
IN  
Typical @ 25_C, V = 5.0 V  
CC  
Power Dissipation Capacitance (Note 7)  
20  
PD  
7. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.  
PD  
Average operating current can be obtained by the equation: I  
) = C ¯ V ¯ f + I . C is used to determine the no--load dynamic  
CC(OPR  
PD CC in CC PD  
2
power consumption: P = C ¯ V  
¯ f + I ¯ V  
.
D
PD  
CC  
in  
CC  
CC  
http://onsemi.com  
4
MC74VHC157  
NOISE CHARACTERISTICS (Input t = t = 3.0 ns; C = 50 pF; V = 5.0 V)  
r
f
L
CC  
T
A
= 25_C  
Typ  
Max  
Symbol  
Characteristic  
Unit  
V
V
Quiet Output Maximum Dynamic V  
Quiet Output Minimum Dynamic V  
0.3  
0.8  
0.8  
3.5  
OLP  
OLV  
IHD  
ILD  
OL  
V
V
V
0.3  
V
OL  
Minimum High Level Dynamic Input Voltage  
Maximum Low Level Dynamic Input Voltage  
V
1.5  
V
V
V
CC  
CC  
E
Y
A, B, or S  
50%  
50%  
GND  
GND  
t
t
PHL  
PLH  
t
t
PHL  
PLH  
Y
50% V  
50% V  
CC  
CC  
Figure 5. Switching Waveform  
Figure 6. Inverting Switching  
TEST POINT  
OUTPUT  
DEVICE  
UNDER  
TEST  
C *  
L
*Includes all probe and jig capacitance.  
Figure 7. Test Circuit  
INPUT  
Figure 8. Input Equivalent Circuit  
http://onsemi.com  
5
MC74VHC157  
PACKAGE DIMENSIONS  
SOIC--16  
D SUFFIX  
CASE 751B--05  
ISSUE J  
-- A --  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
16  
1
9
8
-- B --  
P 8 PL  
M
S
0.25 (0.010)  
B
G
MILLIMETERS  
DIM MIN MAX  
10.00 0.386  
INCHES  
MIN  
MAX  
0.393  
0.157  
0.068  
0.019  
0.049  
F
A
B
C
D
F
9.80  
3.80  
1.35  
0.35  
0.40  
R X 45  
K
_
4.00  
1.75  
0.49  
1.25  
0.150  
0.054  
0.014  
0.016  
C
G
J
K
M
P
R
1.27 BSC  
0.050 BSC  
-- T --  
SEATING  
PLANE  
0.19  
0.10  
0.25  
0.25  
0.008  
0.004  
0.009  
0.009  
7
J
M
D
16 PL  
0
5.80  
0.25  
7
0
_
_
_
_
6.20  
0.50  
0.229  
0.010  
0.244  
0.019  
M
S
S
0.25 (0.010)  
T
B
A
TSSOP  
DT SUFFIX  
CASE 948F--01  
ISSUE O  
16X K REF  
M
S
S
0.10 (0.004)  
T
U
V
S
0.15 (0.006) T  
U
K
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
K1  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.  
PROTRUSIONS OR GATE BURRS. MOLD FLASH  
OR GATE BURRS SHALL NOT EXCEED 0.15  
(0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE INTERLEAD  
FLASH OR PROTRUSION. INTERLEAD FLASH OR  
PROTRUSION SHALL NOT EXCEED  
0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN  
EXCESS OF THE K DIMENSION AT MAXIMUM  
MATERIAL CONDITION.  
16  
9
2X L/2  
J1  
B
-- U --  
SECTION N--N  
L
J
PIN 1  
IDENT.  
8
1
N
0.25 (0.010)  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE DETERMINED  
AT DATUM PLANE --W--.  
S
0.15 (0.006) T  
U
A
-- V --  
M
MILLIMETERS  
INCHES  
N
DIM MIN  
MAX  
5.10  
4.50  
1 . 2 0  
0.15  
0.75  
MIN  
MAX  
0.200  
0.177  
0 . 0 4 7  
0.006  
0.030  
A
B
C
D
F
4.90  
4.30  
-- -- --  
0.193  
0.169  
-- -- --  
F
DETAIL E  
0.05  
0.50  
0.002  
0.020  
G
H
J
J1  
K
K1  
L
0.65 BSC  
0.026 BSC  
0.18  
0.09  
0.09  
0.19  
0.19  
0.28  
0.20  
0.16  
0.30  
0.25  
0.007  
0.004  
0.004  
0.007  
0.007  
0.011  
0.008  
0.006  
0.012  
0.010  
-- W --  
C
0.10 (0.004)  
SEATING  
PLANE  
H
DETAIL E  
6.40 BSC  
0.252 BSC  
-- T --  
D
M
0
8
0
8
G
_
_
_
_
http://onsemi.com  
6
MC74VHC157  
PACKAGE DIMENSIONS  
SOIC EIAJ--16  
M SUFFIX  
CASE 966--01  
ISSUE O  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH OR PROTRUSIONS AND ARE MEASURED  
AT THE PARTING LINE. MOLD FLASH OR  
PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006)  
PER SIDE.  
L
16  
9
8
E
Q
1
H
E
E
M
_
4. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
5. THE LEAD WIDTH DIMENSION (b) DOES NOT  
INCLUDE DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)  
TOTAL IN EXCESS OF THE LEAD WIDTH  
DIMENSION AT MAXIMUM MATERIAL CONDITION.  
DAMBAR CANNOT BE LOCATED ON THE LOWER  
RADIUS OR THE FOOT. MINIMUM SPACE  
BETWEEN PROTRUSIONS AND ADJACENT LEAD  
TO BE 0.46 ( 0.018).  
1
L
DETAIL P  
Z
D
VIEW P  
e
MILLIMETERS  
INCHES  
A
DIM MIN  
MAX  
2.05  
0.20 0.002  
0.50 0.014  
0.27 0.007  
10.50 0.390  
5.45 0.201  
MIN  
-- -- --  
MAX  
0 . 0 8 1  
0.008  
0.020  
0.011  
0.413  
0.215  
c
A
1
b
c
D
E
-- -- --  
0.05  
0.35  
0.18  
9.90  
5.10  
A
A
1
b
0.13 (0.005)  
e
E
1.27 BSC  
0.050 BSC  
0.10 (0.004)  
M
H
7.40  
0.50  
1.10  
8.20 0.291  
0.85 0.020  
1.50 0.043  
0.323  
0.033  
0.059  
L
L
E
M
Q
Z
0
0.70  
-- -- --  
10  
0
10  
0.035  
0 . 0 3 1  
_
_
_
_
0.90 0.028  
0 . 7 8 -- -- --  
1
ON Semiconductor and  
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
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MC74VHC157/D  

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