FDS8949-F085 [ONSEMI]
双 N 沟道，逻辑电平，PowerTrench® MOSFET，40V，6A，29mΩ;
| 型号： | FDS8949-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，逻辑电平，PowerTrench® MOSFET，40V，6A，29mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：612K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS8949-F085
Dual N-Channel Logic Level PowerTrench® MOSFET
40V, 6A, 29mΩ
Features
General Description
These N-Channel Logic Level MOSFETs are produced
Max rDS(on) = 29mΩ at VGS = 10V
Max rDS(on) = 36mΩ at VGS = 4.5V
Low gate charge
using
ON
Semiconductor’s
advanced
PowerTrench® process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
High performance trench technology for extremely low
rDS(on)
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
High power and current handling capability
Qualified to AEC Q101
Applications
RoHS compliant
Inverter
Power suppliers
D2
D2
D1
D1
G2
SO-8
S2
G1
S1
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
40
V
V
±20
(Note 1a)
(Note 3)
6
ID
A
20
EAS
Drain-Source Avalanche Energy
26
mJ
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
1.6
PD
W
(Note 1a)
(Note 1b)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance-Single operation, Junction to Ambient
(Note 1a)
81
135
40
Thermal Resistance-Single operation, Junction to Ambient (Note 1b)
°C/W
Thermal Resistance, Junction to Case
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
2500 units
FDS8949
FDS8949-F085
13’’
12mm
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
1
Publication Order Number:
FDS8949-F085/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V
40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
DS = 32V, VGS = 0V
TJ = 55°C
VGS = ±20V,VDS = 0V
33
mV/°C
V
1
µA
µA
nA
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
10
±100
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA
1
1.9
3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250µA, referenced to 25°C
-4.6
mV/°C
V
GS = 10V, ID = 6A
21
26
29
22
29
36
43
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
VGS = 4.5V, ID = 4.5A
VGS = 10V, ID = 6A,TJ = 125°C
VDS = 10V,ID = 6A
mΩ
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
715
105
60
955
140
90
pF
pF
pF
Ω
VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
1.1
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
9
5
18
10
37
6
ns
ns
VDD = 20V, ID = 1A
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
23
3
ns
ns
Qg
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
7.7
2.4
2.8
11
nC
nC
nC
Qgs
Qgd
VDS = 20V, ID = 6A,VGS = 5V
Drain-Source Diode Characteristics and Maximum Ratings
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = 6A (note 2)
0.8
17
7
1.2
26
11
V
Reverse Recovery Time (note 3)
IF = 6A, diF/dt = 100A/µs
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1: R
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θJA
θJC
a) 81°C/W when
mounted on a 1in
pad of 2 oz copper
b) 135°C/W when mounted on a
minimum pad .
2
Scale 1:1 on letter size paper
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting T = 25°C, L = 1mH, I = 7.3A, V = 40V, V = 10V.
J
AS
DD
GS
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2
Typical Characteristics TJ = 25°C unless otherwise noted
20
16
12
8
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
V
= 10V
GS
V
= 3.5V
GS
VGS = 3.0V
V
= 4.5V
GS
VGS = 3.5V
V
= 3.0V
GS
VGS = 4.5V
VGS = 10V
4
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
0
4
8
12
16
20
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
70
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
I
= 6A
D
I
D
= 3.5A
V
= 10V
GS
60
50
40
30
20
10
T = 125oC
J
T
J
= 25oC
-50 -25
0
25
50
75
100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
20
100
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
V
GS
= 0V
V
= 10V
16
12
8
DD
10
1
T = 125oC
J
T
J
= 25oC
T = 125oC
J
T
J
= 25oC
0.1
= -55oC
T
= -55oC
J
T
J
4
0.01
0
1.5
1E-3
2.0
2.5
3.0
3.5
4.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
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3
Typical Characteristics TJ = 25°C unless otherwise noted
103
10
V
DD
= 10V
C
iss
8
6
4
2
0
V
= 30V
DD
V
DD
= 20V
C
oss
102
C
rss
f = 1MHz
= 0V
V
GS
101
0.1
1
10
40
0
4
8
12
16
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
10
7
6
5
V
GS
= 10V
4
3
2
1
0
TJ = 25oC
1
V
= 4.5V
GS
TJ = 125oC
o
R
θJA
= 81 C/W
0.1
10-3
10-2
10-1
100
101
102
tAV, TIME IN AVALANCHE(ms)
103
25
50
75
100
125
o
150
T , Ambient TEMPERATURE ( C)
A
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
100
100
VGS = 10V
10
100us
1ms
SINGLE PULSE
= 135°C/W
10
R
1
0.1
θJA
10ms
T
= 25°C
A
LIMITED BY
PACKAGE
100ms
1s
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
T
J
= MAX RATED
SINGLE PULSE
10s
DC
o
T
= 25 C
A
1
0.01
0.7
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
102
103
300
100
0.01
0.1
1
10
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
0.1
(PK)
t
1
t
2
0.01
Rθ (t) = r(t)*Rθ
JA
JA
JA
o
Rθ = 135 C/W
T -T =P*Rθ
J A JA
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
1E-3
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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