FDS8958AD84Z [FAIRCHILD]
Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | FDS8958AD84Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2002
FDS8958A
Dual N & P-Channel PowerTrench MOSFET
General Description
Features
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
•
Q1:
7.0A, 30V
N-Channel
RDS(on) = 0.028Ω @ VGS = 10V
RDS(on) = 0.040Ω @ VGS = 4.5V
•
Q2:
-5A, -30V
P-Channel
DS(on) = 0.052Ω @ VGS = -10V
RDS(on) = 0.080Ω @ VGS = -4.5V
R
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
•
•
Fast switching speed
High power and handling capability in a widely
used surface mount package
Q2
D2
5
6
7
8
4
3
2
1
D2
D1
D1
Q1
G2
SO-8
S2
G1
S1
S-
Pin 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Q1
30
20
7
Q2
30
20
-5
Units
V
V
A
(Note 1a)
20
-20
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
1.6
1
W
(Note 1a)
(Note 1b)
(Note 1c)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
RθJA
RθJC
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8958A
FDS8958A
13”
12mm
2500 units
FDS8958A Rev D1(W)
2002 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Q1
Q2
30
V
V
GS = 0 V, ID = 250 µA
Voltage
-30
VGS = 0 V, ID = -250 µA
Breakdown Voltage
Q1
25
∆BVDSS
∆TJ
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
mV/°C
µA
Temperature Coefficient
Q2
-22
IDSS
Zero Gate Voltage Drain
Q1
Q2
All
1
-1
Current
VDS = -24 V, VGS = 0 V
IGSSF
IGSSR
Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V
100
nA
nA
All
-100
On Characteristics
(Note 2)
Gate Threshold Voltage
VGS(th)
Q1
Q2
1
1.6
3
V
V
DS = VGS, ID = 250 µA
-1
-1.7
-3
VDS = VGS, ID = -250 µA
Gate Threshold Voltage
Temperature Coefficient
Q1
-4.3
∆VGS(th)
∆TJ
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VGS = 10 V, ID = 7 A
mV/°C
mΩ
Q2
4
RDS(on)
Static Drain-Source
Q1
Q2
21
32
27
28
42
40
52
78
80
On-Resistance
VGS = 10 V, ID = 7 A, TJ = 125°C
VGS = 4.5 V, ID = 6 A
V
GS = -10 V, ID = -5 A
41
58
58
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V, ID = -4 A
ID(on)
gFS
On-State Drain Current
VGS = 10 V, VDS = 5 V
Q1
Q2
Q1
Q2
20
A
S
V
GS = -10 V, VDS = -5 V
-20
Forward Transconductance
VDS = 5 V, ID = 7 A
VDS = -5 V, ID =-5 A
19
11
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Q1
Q1
Q2
Q1
Q2
Q1
Q2
789
690
173
306
66
pF
pF
pF
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
Output Capacitance
Q2
VDS = -10 V, VGS = 0 V, f = 1.0 MHz
Reverse Transfer Capacitance
77
FDS8958A Rev D1(W)
Electrical Characteristics (continued)
Symbol Parameter Test Conditions
TA = 25°C unless otherwise noted
Type Min Typ Max Units
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
2.2
6.7
7.5
9.7
11.8
19.8
3.7
12.3
16
4.4
13.4
15
ns
ns
V
V
DD = 10 V, ID = 1 A,
GS = 10V, RGEN = 6 Ω
19.4
21.3
35.6
7.4
Q2
ns
VDD = -10 V, ID = -1 A,
VGS = -10V, RGEN = 6 Ω
ns
22.2
26
Qg
Qgs
Qgd
Q1
nC
nC
nC
VDS = 15 V, ID = 7 A, VGS = 10 V
14
23
2.5
2.2
2.1
1.9
Q2
V
DS = -15 V, ID = -5 A,VGS = -10 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
1.3
-1.3
1.2
A
V
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A
(Note 2)
(Note 2)
0.74
Voltage
VGS = 0 V, IS = -1.3 A
-0.76
-1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°/W when
c) 135°/W when mounted on a
minimum pad.
mounted on a .02 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS8958A Rev D1(W)
Typical Characteristics: Q1
30
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
4.0V
VGS = 3.0V
7.0V
3.5V
5.0V
4.5V
20
10
0
3.5V
3.0V
4.0V
12
4.5V
5.0V
18
6.0V
7.0V
10V
2.5V
0
6
24
30
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
1.9
ID = 7A
ID = 7A
VGS = 10V
1.6
1.3
1.0
0.7
0.4
TA = 125oC
TA = 25oC
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
VGS = 0V
VDS = 10V
25oC
TA = -55oC
25
20
15
10
5
10
TA = 125oC
125oC
1
0.1
25oC
-55oC
0.01
0.001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
2
3
4
5
V
SD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958A Rev D1(W)
Typical Characteristics: Q1
10
1200
900
600
300
0
f = 1MHz
GS = 0 V
VDS = 5V
ID =7A
10V
V
8
6
4
2
0
15V
CISS
COSS
CRSS
0.0
5.0
10.0
15.0
20.0
0
4
8
12
16
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
RDS(ON) LIMIT
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
µ
1ms
10ms
10
100ms
1s
1
10s
DC
VGS = 10V
SINGLE PULSE
0.1
0.01
RθJA = 135oC/W
TA = 25oC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS8958A Rev D1(W)
Typical Characteristics: Q2
30
2.5
2
VGS = -10.0V
VGS = -3.5V
25
-7.0V
-5.0V
20
15
10
5
-4.0V
-4.0V
-4.5V
1.5
1
-5.0V
-6.0V
-3.5V
-7.0V
18
-10.0V
-3.0V
4
0
0.5
0
1
2
3
5
150
5.5
0
6
12
24
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.2
ID = -5A
ID = -5A
GS = -10V
V
1.4
1.2
1.0
0.8
0.6
0.15
0.1
0.05
0
TA = 125oC
TA = 25oC
2
4
6
8
10
-50
-25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
30
100
VGS = 0V
TA = -55oC
VDS = -10V
25
20
15
10
5
10
25oC
TA = 125oC
1
25oC
125oC
-55oC
0.1
0.01
0
0.001
1.5
2.5
3.5
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958A Rev D1(W)
Typical Characteristics: Q2
10
1000
800
600
400
200
0
f = 1 MHz
GS = 0 V
ID = -5.3A
VDS = -5V
-10V
V
8
CISS
-15V
6
4
2
0
COSS
CRSS
10
0
4
8
12
16
0
5
15
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
100
50
40
30
20
10
0
RDS(ON) LIMIT
µ
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
1ms
10ms
100ms
1s
10
1
10s
DC
VGS = -10V
SINGLE PULSE
0.1
0.01
RθJA = 135oC/W
TA = 25oC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
Rθ (t) = r(t) * Rθ
JA
JA
RθJA = 135oC/W
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8958A Rev D1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
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STAR*POWER™
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CoolFET™
OPTOLOGIC™
OPTOPLANAR™
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FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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