FDS8958A-F085 [ONSEMI]
双 N 和 P 沟道 PowerTrench® MOSFET 30V;
| 型号： | FDS8958A-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 和 P 沟道 PowerTrench® MOSFET 30V |
| 文件： | 总9页 (文件大小：645K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS8958A-F085
Dual N & P-Channel PowerTrench MOSFET
Features
General Description
•
Q1:
N-Channel
These dual N- and P-Channel enhancement
mode power field effect transistors are produced
7.0A, 30V
RDS(on) = 0.028Ω @ VGS = 10V
RDS(on) = 0.040Ω @ VGS = 4.5V
using
ON
Semiconductor’s
advanced
PowerTrench process that has been especially
tailored to minimize on-state ressitance and yet
maintain superior switching performance.
•
Q2:
P-Channel
5A, -30V
-
RDS(on) = 0.052Ω @ VGS = -10V
RDS(on) = 0.080Ω @ VGS = -4.5V
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
•
•
Fast switching speed
High power and handling capability in a widely
used surface mount package
Qualified to AEC Q101
RoHS Compliant
•
•
D2
Q2
D2
5
6
7
8
4
3
2
1
D1
D1
Q1
G2
SO-8
S2
G1
S1
Pin 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
VDSS
VGSS
ID
Drain-Source Voltage
30
±20
7
30
±20
-5
V
V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
A
20
2
-20
2
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
W
(Note 1a)
(Note 1c)
1.6
0.9
54
1.6
0.9
13
EAS
Single Pulse Avalanche Energy
(Note 3)
mJ
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
RθJA
RθJC
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8958A
13”
12mm
2500 units
FDS8958A-F085
Publication Order Number:
FDS8958A-F085/D
1
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Q1
Q2
30
-30
V
VGS = 0 V,
GS = 0 V,
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VDS = 24 V,
VDS = -24 V,
ID = 250 µA
ID = -250 µA
Voltage
V
Breakdown Voltage
Temperature Coefficient
Q1
Q2
25
-23
∆BVDSS
∆TJ
IDSS
mV/°C
µA
Zero Gate Voltage Drain
Current
VGS = 0 V
VGS = 0 V
VDS = 0 V
Q1
Q2
All
1
-1
100
IGSSF
IGSSR
Gate-Body Leakage, Forward VGS = 20 V,
nA
nA
Gate-Body Leakage, Reverse VGS = -20 V,
VDS = 0 V
All
-100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
Q1
Q2
1
-1
1.9
-1.7
3
-3
V
VDS = VGS
VDS = VGS
,
,
ID = 250 µA
ID = -250 µA
Gate Threshold Voltage
Temperature Coefficient
Q1
Q2
-4.5
4.5
∆VGS(th)
∆TJ
RDS(on)
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
mV/°C
mΩ
Static Drain-Source
On-Resistance
VGS = 10 V,
ID = 7 A
Q1
19
27
24
28
42
40
VGS = 10 V, ID = 7 A, TJ = 125°C
VGS = 4.5 V,
ID = 6 A
VGS = -10 V,
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V,
VGS = 10 V,
VGS = -10 V,
VDS = 5 V,
ID = -5 A
Q2
42
57
65
52
78
80
ID = -4 A
VDS = 5 V
VDS = -5 V
ID = 7 A
ID(on)
gFS
On-State Drain Current
Q1
Q2
Q1
Q2
20
-20
A
S
Forward Transconductance
25
10
VDS = -5 V,
ID =-5 A
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
575
528
145
132
65
70
2.1
6.0
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q2
VDS = -15 V, VGS = 0 V, f = 1.0 MHz
VGS = 15 mV,
f = 1.0 MHz
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2
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
7
5
13
23
14
3
16
14
10
24
37
25
6
17
16
13
ns
ns
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
Q2
V
ns
DD = -15 V, ID = -1 A,
VGS = -10V, RGEN = 6 Ω
ns
9
Qg
Qgs
Qgd
Q1
11.4
9.6
1.7
2.2
2.1
1.7
nC
nC
nC
VDS = 15 V, ID = 7 A, VGS = 10 V
Q2
VDS = -15 V, ID = -5 A,VGS = -10 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Plused Drain-Source Diode Forward Current
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1.3
-1.3
20
-20
1.2
-1.2
A
A
IS
(Note 2)
M
VSD
trr
(Note 2)
(Note 2)
0.75
-0.88
19
19
9
V
Voltage
VGS = 0 V, IS = -1.3 A
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
Q1
nS
nC
IF = 7 A, diF/dt = 100 A/µs
Q2
IF = -5 A, diF/dt = 100 A/µs
Qrr
6
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°/W when
c) 135°/W when mounted on a
minimum pad.
mounted on a .02 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V (Q1).
Starting TJ = 25°C, L = 3mH, IAS = 3A, VDD = 30V, VGS = 10V (Q2).
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3
Typical Characteristics: Q1 (N-Channel)
20
2.2
1.8
1.4
1
VGS = 10.0V
4.0V
3.5V
16
12
8
VGS = 3.5V
6.0V
4.5V
4.0
4.5V
5.0
6.0V
3.0V
10.0V
16
4
0
0.6
0
0.5
1
1.5
2
0
4
8
12
20
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
ID = 7A
VGS = 10.0V
ID = 3.5A
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
16
12
8
100
VGS = 0V
VDS = 5V
10
TA = 125oC
1
0.1
TA = 125oC
-55oC
25oC
25oC
0.01
-55oC
4
0.001
0.0001
0
1.5
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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4
Typical Characteristics: Q1 (N-Channel)
10
800
600
400
200
0
ID = 7A
VDS = 10V
f = 1MHz
VGS = 0 V
20V
8
6
4
2
0
15V
Ciss
Coss
Crss
0
5
10
15
20
0
2
4
6
8
10
12
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
10
100
µ
s
RDS(ON) LIMIT
1ms
10ms
100ms
1s
1
Tj=25
10s
DC
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
Tj=125
0.1
0.01
1
0.01
0.1
1
10
100
0.1
1
10
100
t
AV, TIME IN AVALANCHE (mS)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Unclamped Inductive Switching
Capability Figure
50
40
30
20
SINGLE PULSE
RθJA = 135°C/W
T
A = 25°C
10
0
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Single Pulse Maximum Power Dissipation.
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5
Typical Characteristics: Q2 (P-Channel)
2
1.8
1.6
1.4
1.2
1
30
VGS = -10V
-6.0V
-5.0V
VGS=-4.0V
-4.5V
20
10
0
-4.5V
-4.0V
-5.0V
-6.0V
-7.0V
-3.5V
-8.0V
-10V
-3.0V
0.8
0
1
2
3
4
5
6
0
6
12
18
24
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
1.6
ID = -5A
ID = -2.5A
VGS = -10V
1.4
0.2
0.15
0.1
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
0.05
0
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Temperature.
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
15
100
25oC
VDS = -5V
TA = -55oC
VGS =0V
10
12
9
TA = 125oC
125oC
1
25oC
0.1
6
-55oC
0.01
3
0.001
0
0.0001
1
1.5
2
2.5
3
3.5
4
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Transfer Characteristics.
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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6
Typical Characteristics: Q2 (P-Channel)
1
D = 0.5
RqJA (t) = r(t) * R qA
RqJA = 135 °C/W
0.2
0.1
0.1
0.05
0.02
P(pk)
0.01
t1
t2
0.01
SINGLE PULSE
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 23. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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