FDPF7N50U-G [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM， 500 V，5A，1.5Ω，TO-220F;
| 型号： | FDPF7N50U-G |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM， 500 V，5A，1.5Ω，TO-220F |
| 文件： | 总9页 (文件大小：920K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDPF7N50U
N-Channel UniFET Ultra FRFET MOSFET
TM
TM
500 V, 5 A, 1.5
Features
Description
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
•
•
•
•
•
RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A
Low Gate Charge (Typ.12.8 nC)
Low Crss (Typ. 9 pF)
energy strength. UniFET Ultra FRFETTM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
100% Avalanche Tested
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
Improved dv/dt Capability
Applications
•
•
•
•
LCD/LED TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
G
G
D
TO-220F
G
D
S
S
TO-220
Absolute Maximum Ratings
S
Symbol
Parameter
FDPF7N50U
Unit
VDSS
Drain-Source Voltage
Drain Current
500
V
ID
- Continuous (TC = 25C)
- Continuous (TC = 100C)
5 *
3.0 *
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
20 *
30
125
5
A
V
VGSS
EAS
IAR
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
8.9
20
mJ
V/ns
Power Dissipation
(TC = 25C)
- Derate above 25C
31.3
0.25
W
W/C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FDPF7N50U
Unit
RJC
RJA
Thermal Resistance, Junction-to-Case, Max.
4.0
C/W
62.5
Thermal Resistance, Junction-to-Ambient, Max.
Publication Order Number:
©2009 Semiconductor Components Industries, LLC.
October-2017,Rev.3
FDPF7N50U/D
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDPF7N50U
FDPF7N50U
TO-220F
--
--
50
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A
500
--
--
--
--
V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
ID = 250A, Referenced to 25C
0.5
V/C
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125C
--
--
--
--
25
250
A
A
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250A
3.0
--
--
5.0
1.5
--
V
S
Static Drain-Source
On-Resistance
V
GS = 10V, ID = 2.5A
1.2
2.5
gFS
Forward Transconductance
VDS = 40V, ID = 2.5A
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
720
95
9
940
190
13.5
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 250V, ID = 5A
RG = 25
--
--
--
--
--
--
--
6
55
20
120
60
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
25
ns
(Note 4)
(Note 4)
35
80
ns
Qg
VDS = 400V, ID = 5A
VGS = 10V
12.8
3.7
5.8
16.6
--
nC
nC
nC
Qgs
Qgd
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
5
20
1.6
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 5A
--
V
VGS = 0V, IS = 5A
40
0.04
ns
C
dIF/dt =100A/s
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I = 5A, V = 50V, L=10mH, R = 25, Starting T = 25C
AS
DD
G
J
3. I 5A, di/dt 200A/s, V BV
, Starting T = 25C
SD
DD
DSS
J
4. Essentially Independent of Operating Temperature Typical Characteristics
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2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
VGS
Top :
10.0 V
8.0V
101
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
15
10
5
150oC
Bottom : 5.0 V
100
10-1
10-2
25oC
* Notes :
1. 250s Pulse Test
o
2. TC = 25
C
* Note :
1. VDS = 40V
2. 250s Pulse Test
0
0
10
20
30
40
50
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.5
101
2.0
1.5
1.0
0.5
0.0
VGS = 10V
100
VGS = 20V
150oC
25oC
* Notes :
1. VGS = 0V
* Note : TJ = 25oC
2. 250s Pulse Test
10-1
0.2
0
5
10
15
20
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
VDS = 250V
Coss = Cds + Cgd
Crss = Cgd
1000
100
10
VDS = 400V
Ciss
Coss
6
Crss
4
* Notes :
1. VGS = 0 V
2. f = 1 MHz
2
5
* Note : ID = 7 A
0
100
101
0
5
10
15
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Drain Current
Vs. Case Temperature
6
1.2
1.1
4
1.0
2
* Notes :
0.9
0.8
1. VGS = 0 V
2. ID = 250 A
0
-100
-50
0
50
100
150
200
25
50
75
100
125
150
TJ, Junction Temperature [oC]
TC, Case Temperature [oC]
Figure 9. Maximum Safe Operating Area
- FDPF7N50U
10 us
101
100 us
1 ms
10 ms
100 ms
100
Operation in This Area
DC
is Limited by R DS(on)
10-1
* Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
10-2
100
101
102
VDS, Drain-Source Voltage [V]
Figure 10. Transient Thermal Response Curve
D=0.5
100
0.2
0.1
0.05
PDM
10-1
0.02
t1
0.01
t2
* N otes
:
1. Z JC (t) = 4.0 oC /W M ax.
2. D uty Factor, D =t1/t2
3. TJM - TC
= PDM * ZJC(t)
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
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4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
Mechanical Dimensions
TO-220M03
Dimensions in Millimeters
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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