FDPF8N50NZ [ONSEMI]
功率 MOSFET,N 沟道,UniFETTM II,500 V,8 A,850 mΩ,TO-220F;型号: | FDPF8N50NZ |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,UniFETTM II,500 V,8 A,850 mΩ,TO-220F 局域网 开关 脉冲 晶体管 |
文件: | 总12页 (文件大小:993K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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October 2013
FDP8N50NZ / FDPF8N50NZ
TM
N-Channel UniFET II MOSFET
500 V, 8 A, 850 m
Features
Description
•
•
•
•
•
•
•
RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A
Low Gate Charge (Typ. 14 nC)
Low Crss (Typ. 5 pF)
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also
provides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp
ballasts.
100% Avalanche Tested
Improve dv/dt Capability
ESD Improved Capability
RoHS Compliant
Applications
•
•
LCD/LED TV
Lighting
•
•
Uninterruptible Power Supply
AC-DC Power Supply
D
G
G
G
D
D
S
TO-220F
TO-220
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
FDP8N50NZ FDPF8N50NZ
Unit
V
Drain to Source Voltage
Gate to Source Voltage
500
±25
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
8
8*
ID
Drain Current
A
4.8
32
4.8*
32*
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
122
8
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
13
10
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
130
1
40.3
0.3
PD
Power Dissipation
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC
RJA
Parameter
FDP8N50NZ FDPF8N50NZ
Unit
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.96
62.5
3.1
oC/W
62.5
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
1
Package Marking and Ordering Information
Device Marking
FDP8N50NZ
Device
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
50 units
FDP8N50NZ
FDPF8N50NZ
FDPF8N50NZ
TO-220F
Tube
N/A
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250A, VGS = 0V, TC = 25oC
500
-
-
-
-
V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250A, Referenced to 25oC
0.5
V/oC
V
DS = 500V, VGS = 0V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
A
A
VDS = 400V, TC = 125oC
10
VGS = ±25V, VDS = 0V
±10
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250A
VGS = 10V, ID = 4A
VDS = 20V, ID = 4A
3.0
-
5.0
0.85
-
V
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.77
6.3
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
565
80
5
735
105
8
pF
pF
pF
nC
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
14
4
18
-
V
V
DS = 400V,ID = 8A
GS = 10V
Qgd
6
-
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
17
34
43
27
45
80
95
60
ns
ns
ns
ns
VDD = 250V, ID = 8A
G = 25, VGS = 10V
R
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
8
30
1.4
-
A
A
ISM
VSD
trr
-
-
-
-
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 8A
-
V
228
1.43
ns
C
VGS = 0V, ISD = 8A
dIF/dt = 100A/s
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.8mH, I = 8A, V = 50V, R = 25, Starting T = 25C
AS
DD
G
J
3. I 8A, di/dt 200A/s, V BV
, Starting T = 25C
SD
DD
DSS
J
4. Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
2
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
30
VGS = 15.0 V
10.0 V
10
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
150oC
-55oC
1
25oC
1
0.1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250s Pulse Test
0.03
0.1
0.03
0.1
1
10 20
2
4
6
8
10
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
2.0
150oC
1.6
25oC
10
1.2
VGS = 10V
VGS = 20V
0.8
*Notes:
1. VGS = 0V
*Note: TC = 25oC
12 15
ID, Drain Current [A]
2. 250s Pulse Test
1
0.4
0.4
0.8
1.2
1.6
2.0
2.4
0
3
6
9
18
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1200
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
VDS = 100V
DS = 250V
DS = 400V
Coss
= C
gd
V
V
8
6
4
2
0
900
600
300
0
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Crss
*Note: ID = 8A
12
0.1
1
10
30
0
3
6
9
15
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
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©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
3
Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.9
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
2. ID = 4A
2. ID = 250A
0.8
-100
-100
-50
0
50
100
150
-50
0
50
100
150
o
o
TJ, Junction Temperature [C]
TJ, Junction Temperature [C]
Figure 9. Maximum Safe Operating Area
- FDP8N50NZ
Figure 10. Maximum Safe Operating Area
- FDPF8N50NZ
50
50
10s
10s
100s
100s
10
10
1ms
1ms
10ms
10ms
DC
1
1
Operation in This Area
DC
Operation in This Area
is Limited by R DS(on)
is Limited by R DS(on)
0.1
0.1
*Notes:
*Notes:
1. TC = 25oC
2. TJ = 150oC
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
3. Single Pulse
100
0.01
1
10
100
1000
1
10
1000
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 11. Maximum Drain Current
Figure 12. Unclamped Inductive
vs. Case Temperature
Switching Capability
10
10
8
8
6
4
2
0
TJ = 25oC
TJ = 125oC
1
0.01
0.1
1
4
25
50
75
100
125
150
o
TC, Case Temperature [C]
tAV, TIME IN AVALANCHE(ms)
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
4
Typical Characteristics (Continued)
Figure 13. Transient Thermal Response Curve - FDP8N50NZ
2
1
0.5
0.2
PDM
0.1
0.1
t1
0.05
t2
0.02
0.01
*Notes:
1. ZJC(t) = 0.96oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
t1, Square Wave Pulse Duration [sec]
10-1
1
Figure 14. Transient Thermal Response Curve - FDPF8N50NZ
5
0.5
1
0.2
0.1
PDM
0.05
t1
0.1
0.02
t2
*Notes:
0.01
Single pulse
1. ZJC(t) = 3.1oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.01
10-5
10-4
10-3
10-2
10-1
1
10
102 103
t1, Square Wave Pulse Duration [sec]
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
5
Figure 15. Gate Charge Test Circuit & Waveform
I
= const.
G
Figure 16. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
6
Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
7
Mechanical Dimensions
TO-220 3L
Figure 19. TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
Dimension in Millimeters
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
8
Mechanical Dimensions
TO-220F 3L
Figure 20. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
Dimension in Millimeters
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
9
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Sync-Lock™
®*
®
®
®
tm
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GreenBridge™
Green FPS™
PowerTrench
PowerXS™
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QS™
Quiet Series™
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™
®
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®
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®
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®
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Saving our world, 1mW/W/kW at a time™
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®
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FACT
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®
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Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
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Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
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©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
10
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