FDPF8N50NZF [ONSEMI]
功率 MOSFET,N 沟道,UniFETTM II,FRFET®,500 V,7 A,1 Ω,TO-220F;型号: | FDPF8N50NZF |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,UniFETTM II,FRFET®,500 V,7 A,1 Ω,TO-220F 局域网 开关 脉冲 晶体管 |
文件: | 总10页 (文件大小:898K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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October 2013
FDPF8N50NZF
TM
®
N-Channel UniFET II FRFET MOSFET
500 V, 7 A, 1
Features
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also
provides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. The body diode’s reverse recovery performance of
UniFET II FRFET® MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp
ballasts.
•
•
•
•
•
•
•
RDS(on) = 850 m (Typ.) @ VGS = 10 V, ID = 3.25 A
Low Gate Charge (Typ. 14 nC)
Low Crss (Typ. 5 pF)
100% Avalanche Tested
Improve dv/dt Capability
ESD Improved Capability
RoHS Compliant
Applications
•
•
•
•
LCD/LED TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
G
G
D
S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
Parameter
FDPF8N50NZF
Unit
V
Drain to Source Voltage
Gate to Source Voltage
500
±25
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
7*
ID
Drain Current
A
4.2*
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
28*
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
93
7
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
13
20
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
40
PD
Power Dissipation
0.32
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDPF8N50NZF
Unit
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
3.1
oC/W
62.5
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©2010 Fairchild Semiconductor Corporation
FDPF8N50NZF Rev. C1
1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDPF8N50NZF
FDPF8N50NZF
TO-220F
Tube
N/A
50 units
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250A, VGS = 0V, TC = 25oC
500
-
-
-
-
V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250A, Referenced to 25oC
0.5
V/oC
V
DS = 500V, VGS = 0V
-
-
-
-
-
-
10
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
A
A
VDS = 400V, TC = 125oC
100
±10
VGS = ±25V, VDS = 0V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250A
VGS = 10V, ID = 3.5A
VDS = 20V, ID = 3.5A
3.0
-
5.0
1
V
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.85
6.3
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
565
80
5
735
105
8
pF
pF
pF
nC
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
14
4
18
-
V
V
DS = 400V,ID = 7A
GS = 10V
Qgd
6
-
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
17
34
43
27
45
80
95
60
ns
ns
ns
ns
VDD = 250V, ID =7A
G = 25, VGS = 10V
R
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
7
28
1.5
-
A
A
ISM
VSD
trr
-
-
-
-
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 7A
-
V
80
0.3
ns
C
VGS = 0V, ISD = 7A
dIF/dt = 100A/s
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.8mH, I = 7A, V = 50V, R = 25, Starting T = 25C
AS
DD
G
J
3. I 7A, di/dt 200A/s, V BV
, Starting T = 25C
SD
DD
DSS
J
4. Essentially Independent of Operating Temperature Typical Characteristics
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©2010 Fairchild Semiconductor Corporation
FDPF8N50NZF Rev. C1
2
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
30
VGS = 15.0 V
10.0 V
10
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
150oC
-55oC
1
25oC
1
0.1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250s Pulse Test
0.03
0.1
0.03
0.1
1
10 20
2
4
6
8
10
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
2.0
150oC
1.6
25oC
10
1.2
VGS = 10V
VGS = 20V
0.8
*Notes:
1. VGS = 0V
*Note: TC = 25oC
12 15
ID, Drain Current [A]
2. 250s Pulse Test
1
0.4
0.4
0.8
1.2
1.6
2.0
2.4
0
3
6
9
18
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1200
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 100V
VDS = 250V
VDS = 400V
= C + C
ds gd
oss
rss
Coss
= C
gd
8
6
4
2
0
900
600
300
0
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Crss
*Note: ID = 6.5A
9 12 15
0.1
1
10
30
0
3
6
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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©2010 Fairchild Semiconductor Corporation
FDPF8N50NZF Rev. C1
3
Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDPF8N50NZF
1.2
1.1
1.0
10 s
100 s
101
1 ms
10 ms
100 ms
100
DC
Operation in This Area
is Limited by R DS(on)
-1
10
?
Notes:
1. TC = 25 oC
0.9
2. T = 150 oC
J
*Notes:
1. VGS = 0V
3. Single Pulse
-2
10
2. ID = 250A
100
101
102
103
0.8
-100
VDS, Drain-Source Voltage [V]
-50
0
50
100
150
o
TJ, Junction Temperature [C]
Figure 9. Maximum Drain Current
vs. Case Temperature
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [? ]
Figure 10. Transient Thermal Response Curve -FDPF8N50NZF
5
0.5
1
0.2
0.1
PDM
0.05
t1
t2
0.1
0.02
*Notes:
1. ZJC(t) = 3.1oC/W Max.
0.01
Single pulse
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.01
10-5
10-4
10-3
10-2
10-1
1
10
102
103
t1, Square Wave Pulse Duration [sec]
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©2010 Fairchild Semiconductor Corporation
FDPF8N50NZF Rev. C1
4
Figure 11. Gate Charge Test Circuit & Waveform
I
= const.
G
Figure 12. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
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©2010 Fairchild Semiconductor Corporation
FDPF8N50NZF Rev. C1
5
Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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©2010 Fairchild Semiconductor Corporation
FDPF8N50NZF Rev. C1
6
Mechanical Dimensions
TO-220F 3L
Figure 15. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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Dimension in Millimeters
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©2010 Fairchild Semiconductor Corporation
FDPF8N50NZF Rev. C1
7
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Sync-Lock™
®*
®
®
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tm
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Global Power ResourceSM
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QS™
Quiet Series™
RapidConfigure™
™
®
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®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
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Current Transfer Logic™
IntelliMAX™
®
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Marking Small Speakers Sound Louder
and Better™
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®
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Saving our world, 1mW/W/kW at a time™
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®
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
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©2010 Fairchild Semiconductor Corporation
FDPF8N50NZF Rev. C1
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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