FDPF8D5N10C [ONSEMI]
N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，76A，8.5mΩ;
| 型号： | FDPF8D5N10C |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，76A，8.5mΩ |
| 文件： | 总8页 (文件大小：1016K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
www.onsemi.com
FDP8D5N10C / FDPF8D5N10C
N-Channel Shielded Gate PowerTrench MOSFET
100 V, 76 A, 8.5 mΩ
®
Features
General Description
This N-Channel MV MOSFET is produced using ON
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized to minimize on-state resistance and yet maintain
superior switching performance with best in class soft body
diode.
Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 76 A
Extremely Low Reverse Recovery Charge, Qrr
100% UIL Tested
RoHS Compliant
Applications
Synchronous Rectification for ATX / Server / Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
D
G
G
G
D
S
D
S
S
TO-220
TO-220F
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Ratings
Symbol
Parameter
Units
FDP8D5N10C
FDPF8D5N10C
VDS
VGS
Drain to Source Voltage
Gate to Source Voltage
100
±20
76
100
±20
76*
V
V
Drain Current -Continuous
-Continuous
TC = 25°C
(Note 3)
(Note 3)
(Note 1)
(Note 2)
ID
TC = 100°C
54
54*
A
-Pulsed
304
304*
EAS
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
181
mJ
W
TC = 25°C
TA = 25°C
107
2.4
35
2.4
PD
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +175
-55 to +175
°C
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FDP8D5N10C
FDPF8D5N10C
Units
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.4
4.2
°C/W
62.5
62.5
Package Marking and Ordering Information
Device Marking
FDP8D5N10C
FDPF8D5N10C
Device
Package
TO-220
Reel Size
Tape Width
Quantity
FDP8D5N10C
FDPF8D5N10C
-
-
-
-
50 units
50 units
TO-220F
Semiconductor Components Industries, LLC, 2017
May, 2017, Rev. 1.0
Publication Order Number:
FDP8D5N10C / FDPF8D5N10C/D
1
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
DS = 80 V, VGS = 0 V
57
mV/°C
V
1
μA
μA
nA
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 80 V, TJ= 150°C
VGS = ±20 V, VDS = 0 V
500
±100
On Characteristics
VGS(th)
rDS(on)
gFS
Gate to Source Threshold Voltage
VGS = VDS, ID = 130 μA
VGS = 10 V, ID = 76 A
VDS = 5 V, ID = 76 A
2.0
3.0
7.4
68
4.0
8.5
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1765
1010
16
2475
1415
25
pF
pF
pF
Ω
VDS = 50 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.1
0.8
1.6
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
12
11
18
4
22
20
28
10
34
ns
ns
VDD = 50 V, ID = 76 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Output Charge
VGS = 0 V to 10 V
25
9
nC
nC
nC
nC
VDD = 50 V,
D = 76 A
Qgs
Qgd
Qoss
I
5
VDD = 50 V, VGS = 0 V
68
Drain-Source Diode Characteristic
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
76
304
1.3
92
A
A
ISM
VSD
trr
-
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 76 A
GS = 0 V, VDD = 50 V, IF = 76 A,
dIF/dt = 100 A/μs
GS = 0 V, VDD = 50 V, IF = 76 A,
dIF/dt = 300 A/μs
1.0
58
53
51
141
V
ns
nC
ns
nC
V
Qrr
trr
Reverse Recovery Charge
Reverse Recovery Time
85
81
V
Qrr
Reverse Recovery Charge
226
Notes:
1. Pulsed Id please refer to Figure 11 & Figure 12 “Forward Bias Safe Operating Area” for more details.
2. E of 181 mJ is based on starting T = 25 °C, L = 3 mH, I = 11 A, V = 100 V, V = 10 V. 100% test at L = 0.3 mH, I = 25 A.
AS
J
AS
DD
GS
AS
3. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
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2
Typical Characteristics TJ = 25 °C unless otherwise noted.
150
6.0
4.5
3.0
1.5
0.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 8 V
VGS = 5 V
120
90
60
30
0
VGS = 5.5 V
VGS = 6 V
VGS = 6 V
VGS = 5.5 V
VGS = 8 V
VGS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
0
1
2
3
4
5
0
30
60
90
120
150
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
2.2
80
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 76 A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
70
60
50
40
30
20
10
0
VGS = 10 V
ID = 76 A
TJ = 150 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150 175
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
150
200
100
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
120
90
60
30
0
VDS = 5 V
10
TJ = 175 o
C
1
TJ = 175 o
C
TJ = 25 o
C
0.1
TJ = 25 o
C
TJ = -55 o
C
0.01
TJ = -55 o
C
0.001
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
Typical Characteristics TJ = 25 °C unless otherwise noted.
10
10000
1000
100
10
ID = 76 A
Ciss
VDD = 25 V
8
VDD = 50 V
Coss
VDD = 75 V
6
Crss
4
2
0
f = 1 MHz
GS = 0 V
V
1
0
6
12
18
24
30
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
90
75
60
45
30
15
0
50
TJ = 25 o
C
VGS = 10 V
10
TJ = 125 o
C
RθJC = 1.4 oC/W
TJ = 150 o
C
1
0.01
0.1
1
10
100
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature for FDP8D5N10C
500
500
100
100
10 μs
10 μs
10
10
1
THIS AREA IS
LIMITED BY rDS(on)
THIS AREA IS
LIMITED BY rDS(on)
100 μs
100 μs
SINGLE PULSE
SINGLE PULSE
TJ = MAX RATED
1
TJ = MAX RATED
1 ms
1 ms
θJC = 4.2 oC/W
R
θJC = 1.4 oC/W
C = 25 o
R
10 ms
100 ms
10 ms
100 ms
CURVE BENT TO
MEASURED DATA
CURVE BENT TO
MEASURED DATA
T
C = 25 o
C
T
C
0.1
0.1
0.1
0.1
1
10
100
400
1
10
100
400
VDS, DRAIN to SOURCE VOLTAGE (V)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area for FDPF8D5N10C
Figure 11. Forward Bias Safe
Operating Area for FDP8D5N10C
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4
Typical Characteristics TJ = 25 °C unless otherwise noted.
50000
10000
50000
SINGLE PULSE
RθJC = 4.2 oC/W
TC = 25 oC
SINGLE PULSE
R
θJC = 1.4 oC/W
10000
1000
100
T
C = 25 o
C
1000
100
10
10
10-5
10-4
10-3
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
102
t, PULSE WIDTH (sec)
t, PULSE WIDTH (sec)
Figure 14. Single Pulse Maximum Power Dissipation
for FDPF8D5N10C
Figure 13. Single Pulse Maximum Power Dissipation
for FDP8D5N10C
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
SINGLE PULSE
Z
θJC
θJC
o
R
= 1.4 C/W
θJC
Peak T = P
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
0.001
10-5
10-4
10-3
10-2
10-1
100
101
102
t, RECTANGULAR PULSE DURATION (sec)
Figure 15. Junction-to-Case Transient Thermal Response Curve for FDP2D3N10C
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
R
θJC
θJC
o
= 4.2 C/W
θJC
SINGLE PULSE
Peak T = P
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
0.001
10-5
10-4
10-3
10-2
10-1
100
101
102
t, RECTANGULAR PULSE DURATION (sec)
Figure 16. Junction-to-Case Transient Thermal Response Curve for FDPF2D3N10C
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5
Dimensional Outline and Pad Layout
TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other
countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON
Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a
critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is
subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
6
Dimensional Outline and Pad Layout
TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other
countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON
Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a
critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is
subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
7
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