FDMS2672 [ONSEMI]
N 沟道，UltraFET Trench® MOSFET，200V，20A，77mΩ;
| 型号： | FDMS2672 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，UltraFET Trench® MOSFET，200V，20A，77mΩ |
| 文件： | 总8页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
UltraFET Trench
S
S
G
S
Pin 1
200 V, 20 A, 77 mW
FDMS2672
D
D
D
D
General Description
Power 56 (Bottom View)
UItraFETt devices combine characteristics that enable benchmark
WDFN8 5x6, 1.27P
CASE 506DP
efficiency in power conversion applications. Optimized for r
,
DS(on)
low ESR, low total and Miller gate charge, these devices are ideal for
high frequency DC to DC converters.
ELECTRICAL CONNECTION
Features
• Max r
• Max r
= 77 mW at V = 10 V, I = 3.7 A
GS D
DS(on)
DS(on)
= 88 mW at V = 6 V, I = 3.5 A
D
D
G
S
5
6
7
8
4
3
2
1
GS
D
• Low Miller Charge
• This Device is Pb−Free and is RoHS Compliant
S
S
D
D
Application
• DC−DC Conversion
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
N-Channel MOSFET
Symbol
Parameter
Drain to Source Voltage
Ratings
200
Unit
V
V
DS
V
GS
MARKING DIAGRAM
Gate to Source Voltage
20
V
I
D
Drain Current:
A
− Continuous, T = 25°C (Note 5)
20
13
3.7
96
C
&Z&2&K
FDMS
2672
− Continuous, T = 100°C (Note 5)
C
A
− Continuous, T = 25°C (Note 1a)
− Pulsed (Note 4)
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation:
33.8
mJ
W
AS
P
D
T
= 25°C
78
2.5
C
&Z
&2
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
T = 25°C (Note 1a)
A
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
FDMS2672
= Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
1.6
Unit
Thermal Resistance, Junction to Case
°C/W
R
q
JC
R
Thermal Resistance, Junction to Ambient
(Note 1a)
50
q
JA
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
May, 2023 − Rev. 2
FDMS2672/D
FDMS2672
ORDERING INFORMATION AND PACKAGE MARKING
†
Device
Device Marking
FDMS2672
Package
Shipping
FDMS2672
WDFN8 5x6, 1.27P (Pb−Free)
3000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
I
I
= 250 mA, V = 0 V
GS
BVDSS
Drain to Source Breakdown Voltage
200
V
D
DBV
/DT
J
DSS
= 250 mA, referenced to 25°C
Breakdown Voltage Temperature
Coefficient
210
mV/°C
D
mA
IDSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 160 V
1
DS
IGSS
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
DS D
V
GS(th)
2
3.1
4
V
GS
DV
/DT
GS(th)
J
= 250 mA, referenced to 25 °C
Gate to Source Threshold Voltage
Temperature Coefficient
−10
mV/°C
D
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 3.7 A
64
69
77
88
D
= 6 V, I = 3.5 A
r
Drain to Source On Resistance
Forward Transconductance
mW
D
DS(on)
= 10 V, I = 3.7 A, T = 125 °C
129
14
156
D
J
g
= 10 V, I = 3.7 A
S
FS
D
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1740
95
2315
125
45
pF
pF
pF
W
V
= 100 V, V = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
DS
GS
f = 1 MHz
30
0.1
1
5
SWITCHING CHARACTERISTICS
t
t
t
t
Turn-On Delay Time
Rise Time
22
11
36
10
30
7
34
22
57
20
42
ns
ns
d(on)
r
V
V
= 100 V, I = 3.7 A,
D
DD
GS
= 10 V, R
= 6 W
GEN
Turn-Off Delay Time
Fall Time
ns
d(off)
f
ns
Q
Q
Q
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
V
= 0 V to 10 V, V = 100 V, I = 3.7 A
nC
nC
nC
g(TOT)
gs
GS
DD
D
= 100 V, I = 3.7 A
DD
D
8
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
.V = 0 V, IS = 3.7 A
(Note 2)
V
VSD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
0.8
70
1.2
105
357
GS
t
rr
ns
nC
IF = 3.7 A, di/dt = 100 A/ms
Q
rr
Reverse Recovery Charge
238
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FDMS2672
NOTES:
1. R
2
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
CA
a) 50°C/W when mounted on
b) 125°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 33.8 mJ is based on starting T = 25_C, L = 3 mH, I = 4.75 A, V = 25 V. V = 10 V.
AS
J
AS
DD
GS
4. Pulsed Id please refer to Figure 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
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3
FDMS2672
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
3.0
40
PULSE DURATION = 80ms
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
DUTY CYCLE = 0.5%MAX
8V
=
V
GS
2.5
2.0
1.5
1.0
0.5
VGS = 5V
30
20
V
GS = 6V
6V
V
V
=
GS
10V
=
V
GS
8V
=
VGS
= 5V
GS
10
0
10V
=
VGS
0
1
2
3
4
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
2.4
200
ID = 3.7A
VGS = 10V
I
D
= 4.5A
PULSE DURATION = 80ms
2.2
2.0
DUTY CYCLE = 0.5%MAX
175
150
125
1.8
1.6
1.4
1.2
T
A
= 150oC
100
1.0
T
A
= 25oC
0.8
0.6
0.4
75
50
−75 −50 −25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to
vs. Junction Temperature
Source Voltage
25
40
V
GS
= 0V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
10
20
T
J
= 150oC
1
T
J
= 150oC
15
10
5
T
J
= 25oC
T
= 25oC
J
0.1
T
J
= −55oC
0.01
T
J
= −55oC
0.001
0
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMS2672
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
4000
1000
C
iss
V
DD
= 50V
V
DD
= 100V
C
oss
6
V
DD
= 150V
4
C
rss
100
10
2
f = 1 MHz
V
GS
= 0V
0
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
100
0
10
20
30
40
Q , GATE CHARGE (nC)
g
V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
25
20
15
10
5
5
4
V
= 10V
GS
3
TJ = 25oC
V
GS
= 6V
2
TJ = 125oC
R
qJC
= 1.6oC/W
1
0.01
0
25
50
75
100
125
150
0.1
1
10
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Ambient Temperature
20000
10000
500
SINGLE PULSE
R
qJC = 1.6 o
C/W
100
10ms
TC = 25 oC
10
1000
100
10
100ms
THIS AREA IS
LIMITED BY rDS(on)
1
0.1
1ms
10ms
DC
SINGLE PULSE
TJ = MAX RATED
R
qJC = 1.6 oC/W
= 25 o
CURVE BENT TO
MEASURED DATA
TC
C
0.01
−5
−4
−3
−2
−1
10
10
10
10
10
1
1
10
100
700
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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5
FDMS2672
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
NOTES:
Z
R
(t) = r(t) x R
o
qJC
qJC
= 1.6 C/W
SINGLE PULSE
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
−1
10−5
10−4
10−3
10−2
10
1
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
UltraFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 5x6, 1.27P
CASE 506DP
ISSUE O
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13598G
WDFN8 5X6, 1.27P
PAGE 1 OF 1
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