FDMS2D5N08C [ONSEMI]
N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，166A，2.7mΩ;
| 型号： | FDMS2D5N08C |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，166A，2.7mΩ |
| 文件： | 总8页 (文件大小：434K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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FDMS2D5N08C
N-Channel Shielded Gate PowerTrench® MOSFET
80 V, 166 A, 2.7 mΩ
Features
General Description
Shielded Gate MOSFET Technology
This N-Channel MV MOSFET is produced using ON
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized to minimise on-state resistance and yet maintain
superior switching performance with best in class soft body
diode.
Max rDS(on) = 2.7 mΩ at VGS = 10 V, ID = 68 A
Max rDS(on) = 6.7 mΩ at VGS = 6 V, ID = 34 A
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
Applications
MSL1 robust package design
Primary DC-DC MOSFET
Synchronous Rectifier in DC-DC and AC-DC
Motor Drive
100% UIL tested
RoHS Compliant
Solar
Bottom
Top
Pin 1
S
S
S
D
D
D
D
S
Pin 1
S
G
S
D
D
D
G
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
80
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
V
V
±20
TC = 25 °C
C = 100 °C
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
166
T
105
ID
A
-Continuous
TA = 25 °C
24
-Pulsed
823
EAS
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
600
mJ
W
TC = 25 °C
TA = 25 °C
138
PD
(Note 1a)
2.7
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.9
45
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS2D5N08C
FDMS2D5N08C
Power 56
3000 units
Semiconductor Components Industries, LLC, 2017
May, 2017, Rev. 1.1
Publication Order Number:
FDMS2D5N08C/D
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
80
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
62
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 64 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 380 μA
2.0
2.9
4.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 380 μA, referenced to 25 °C
-8.3
mV/°C
V
GS = 10 V, ID = 68 A
2.2
3.3
3.7
148
2.7
6.7
4.5
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 6 V, ID = 34 A
mΩ
VGS = 10 V, ID = 68 A, TJ = 125 °C
VDS = 5 V, ID = 68 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
4455
1480
59
6240
2070
85
pF
pF
pF
Ω
VDS = 40 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.8
1.6
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
21
11
29
7
34
20
47
13
84
54
ns
ns
VDD = 40 V, ID = 68 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Output Charge
VGS = 0 V to 10 V
VGS = 0 V to 6 V
60
38
19
12
84
51
nC
nC
nC
nC
nC
nC
Qg
VDD = 40 V,
D = 68 A
I
Qgs
Qgd
Qoss
Qsync
VDD = 40 V, VGS = 0 V
VDS = 0 V, ID = 68 A
Total Gate Charge Sync
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2.2 A
(Note 2)
(Note 2)
0.7
0.8
30
1.2
1.3
48
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 68 A
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ns
IF = 34 A, di/dt = 300 A/μs
Qrr
trr
55
88
24
39
IF = 34 A, di/dt = 1000 A/μs
Qrr
139
222
nC
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is determined by the user's board design.
θCA
θJA
a. 45 °C/W when mounted on a
b. 115 °C/W when mounted on a
minimum pad of 2 oz copper.
2
1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 600 mJ is based on starting T = 25 °C; N-ch: L = 3 mH, I = 20 A, V = 80 V, V =10 V. 100% test at L = 0.1 mH, I = 63 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
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2
Typical Characteristics TJ = 25 °C unless otherwise noted.
300
6
5
4
3
2
1
0
VGS = 10 V
VGS = 7 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
250
VGS = 6 V
VGS = 5 V
200
VGS = 5.5 V
VGS = 5.5 V
150
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 5 V
50
0
VGS = 10 V
VGS = 7 V
VGS = 4.5 V
2
0
1
3
4
5
0
50
100
150
200
250
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
2.0
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 68 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10 V
ID = 68 A
15
10
5
TJ = 125 o
C
TJ = 25 o
C
0
-75 -50 -25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
300
300
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
100
250
200
150
100
50
VDS = 5 V
10
TJ = 150 o
C
1
TJ = 150 o
C
TJ = 25 o
C
0.1
TJ = 25 o
C
0.01
0.001
TJ = -55 o
C
TJ = -55 o
C
0
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
Typical Characteristics TJ = 25 °C unless otherwise noted.
10
10000
1000
100
10
ID = 68 A
Ciss
VDD = 30 V
8
Coss
VDD = 40 V
6
VDD = 50 V
4
2
0
Crss
f = 1 MHz
GS = 0 V
V
1
0
10
20
30
40
50
60
70
0.1
1
10
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
100
10
1
180
150
120
90
RθJC = 0.9 oC/W
VGS = 10 V
TJ = 25 o
C
TJ = 100 o
C
60
VGS = 6 V
TJ = 125 o
C
30
0
0.001
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs. Case Temperature
1000
100000
10000
1000
100
SINGLE PULSE
RθJC = 0.9 oC/W
C = 25 oC
10 μs
T
100
10
1
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 0.9 oC/W
10 ms
CURVE BENT TO
MEASURED DATA
100 ms/DC
T
C = 25 oC
0.1
0.1
10
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
1
1
10
100 500
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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4
Typical Characteristics TJ = 25 °C unless otherwise noted.
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
0.01
SINGLE PULSE
Z
θJC
θJC
o
R
= 0.9 C/W
θJC
Peak T = P
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
0.001
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
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5
(4.42)
3.81
0.10 C
5.00
PKG
A
2X
8
7
6
5
C
L
B
8
5
(1.14)
(3.49)
KEEP OUT
AREA
(4.63)
(6.61)
C
PKG
6.00
L
(1.27)
4X
0.10 C
1
3
2
4
1
4
PIN #1
IDICATOR
(0.61)
TOP VIEW
SIDE VIEW
8X
1.27
2X
(5.10)
SEE
DETAIL A
LAND PATTERN
RECOMMENDATION
0.10 C
1.10
0.90
0.08 C
C
3.81
1.27
0.05
0.00
0.10
0.05
0.42±0.05 8X
C A B
(0.20)
SEATING
PLANE
C
4X
(0.38)
SCALE: 2:1
1
4
0.57±0.05
4X
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. AA,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
(0.35)
2X
6.00±0.10
4.33±0.10
0.65±0.10
3X
E) IT IS RECOMMENDED TO HAVE NO TRACES
OR VIAS WITHIN THE KEEP OUT AREA.
F) DRAWING FILE NAME: PQFN08TREV1.
8
5
4.23±0.10
5.00±0.10
BOTTOM VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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