FDMS3016DC [FAIRCHILD]
N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0; N沟道双CoolTM的PowerTrench MOSFET的30 V ， 49 A， 6.0
| 型号： | FDMS3016DC |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 |
| 文件： | 总8页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2010
FDMS3016DC
N-Channel Dual CoolTM PowerTrench® MOSFET
30 V, 49 A, 6.0 mΩ
Features
General Description
Dual CoolTM Top Side Cooling PQFN package
Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 12 A
Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A
High performance technology for extremely low rDS(on)
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
advanced
PowerTrench®
process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation
Pin 1
S
S
4
3
2
1
G
S
S
S
S
D
D
D
D
5
6
7
8
G
D
D
D
D
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
±20
49
V
V
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
C = 25 °C
T
78
ID
A
TA = 25 °C
(Note 1a)
18
-Pulsed
200
72
EAS
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(Note 3)
(Note 4)
mJ
dv/dt
1.3
V/ns
TC = 25 °C
TA = 25 °C
60
PD
W
Power Dissipation
(Note 1a)
3.3
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
(Top Source)
(Bottom Drain)
(Note 1a)
5.7
2.1
38
81
16
23
11
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
°C/W
(Note 1i)
(Note 1j)
(Note 1k)
Package Marking and Ordering Information
Device Marking
Device
Package
Dual CoolTM Power 56
Reel Size
Tape Width
12 mm
Quantity
3016
FDMS3016DC
13’’
3000 units
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
17
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.0
1.9
-6
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
GS = 10 V, ID = 12 A
mV/°C
V
5.0
7.0
7.5
44
6.0
9.0
9.4
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 10 A
mΩ
VGS = 10 V, ID = 12 A, TJ = 125 °C
VDS = 5 V, ID = 12 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1038
513
87
1385
685
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
135
0.9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
9
3
18
10
ns
ns
VDD = 15 V, ID = 12 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
19
2
35
ns
10
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
16
7.6
3
23
nC
nC
nC
nC
Qg
10.6
VDD = 15 V,
D = 12 A
I
Qgs
Qgd
2.5
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 12 A
(Note 2)
(Note 2)
0.82
0.73
25
1.3
1.2
45
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 1.9 A
trr
Reverse Recovery Time
ns
IF = 12 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
9
18
nC
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©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
2
Thermal Characteristics
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
(Note 1e)
(Note 1f)
5.7
2.1
38
81
27
34
16
19
26
61
16
23
11
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
°C/W
(Note 1g)
(Note 1h)
(Note 1i)
(Note 1j)
(Note 1k)
(Note 1l)
RθJA
13
NOTES:
1. R
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
is guaranteed by design while R is determined
θCA
θJA
θJC
by the user's board design.
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
a. 38 °C/W when mounted on
a 1 in pad of 2 oz copper
2
2
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2
g. 200FPM Airflow, No Heat Sink,1 in pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
2
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 72 mJ is based on starting T = 25 °C, L = 1 mH, I = 12 A, V = 27 V, V = 10 V.
AS
J
AS
DD
GS
o
4. I ≤ 12 A, di/dt ≤ 100 A/μs, V ≤ BV
, Starting T = 25 C.
J
SD
DD
DSS
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©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
3
Typical Characteristics TJ = 25°C unless otherwise noted
50
6
5
4
3
2
1
0
PULSE DURATION = 80ꢀs
VGS = 10V
DUTY CYCLE = 0.5%MAX
40
30
20
10
0
VGS = 4.5V
VGS = 3V
VGS = 3.5V
VGS = 4V
VGS = 3.5V
VGS = 4.5V
VGS = 4V
PULSE DURATION = 80ꢀs
DUTY CYCLE = 0.5%MAX
VGS = 3V
VGS = 10V
40
0
1
2
3
4
5
0
10
20
30
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
50
PULSE DURATION = 80ꢀs
ID = 12A
GS = 10V
DUTY CYCLE = 0.5%MAX
V
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
ID = 12A
TJ = 125oC
TJ = 25oC
4
-50 -25
0
25
50
75
100 125 150
2
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
50
50
PULSE DURATION = 80ꢀs
VGS = 0V
TJ = 150oC
10
DUTY CYCLE = 0.5%MAX
40
VDS = 5V
1
30
TJ = 25oC
0.1
20
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.01
0.001
10
TJ = -55oC
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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4
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
10
3000
1000
ID = 12A
Ciss
8
VDD = 10V
VDD = 15V
6
Coss
VDD = 20V
4
100
30
f = 1MHz
= 0V
2
0
V
GS
Crss
0
3
6
9
12
15
18
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
80
60
40
20
0
30
R
θJC = 2.1 oC/W
10
VGS = 10 V
TJ = 25oC
Limited by package
VGS = 4.5 V
TJ = 125oC
1
0.01
0.1
1
10
100
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
500
2000
SINGLE PULSE
RθJA = 81 oC/W
TA = 25 o
1000
100
10
100
10
100 us
1 ms
C
10 ms
100 ms
1 s
1
THIS AREA IS
LIMITED BY r
DS(on)
10 s
DC
0.1
SINGLE PULSE
TJ = MAX RATED
θJA = 81 oC/W
A = 25 oC
0.01
R
1
T
0.001
0.5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
200
0.01
0.1
1
10
100
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
5
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
SINGLE PULSE
RθJA = 81 oC/W
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
0.001
0.0005
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
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©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
6
Dimensional Outline and Pad Layout
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©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
4
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
Power-SPM™
PowerTrench
PowerXS™
®*
®
®
SM
®
The Power Franchise
®
Programmable Active Droop™
®
QFET
m
TinyBoost™
TinyBuck™
TinyCalc™
QS™
Quiet Series™
RapidConfigure™
GTO™
Current Transfer Logic™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
®
DEUXPEED
®
™
TinyLogic
Dual Cool™
TINYOPTO™
TinyPower™
TinyPWM™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
MicroPak™
TinyWire™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
SMART START™
®
TriFault Detect™
TRUECURRENT™*
µSerDes™
®
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Fairchild
®
Fairchild Semiconductor
FACT Quiet Series™
®
®
OPTOLOGIC
FACT
FAST
®
®
UHC
®
OPTOPLANAR
®
Ultra FRFET™
UniFET™
VCX™
FastvCore™
FETBench™
tm
®
Sync-Lock™
FlashWriter
FPS™
*
PDP SPM™
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XS™
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Full Production
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I48
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©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
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