FDMS2734 [FAIRCHILD]
N-Channel UltraFET Trench MOSFET 250V, 14A, 122mohm; N沟道UltraFET沟槽MOSFET 250V ， 14A ， 122mohm
| 型号： | FDMS2734 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel UltraFET Trench MOSFET 250V, 14A, 122mohm |
| 文件： | 总7页 (文件大小：508K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2007
FDMS2734
tm
N-Channel UltraFET Trench® MOSFET
250V, 14A, 122mΩ
Features
General Description
Max rDS(on) = 122mΩ at VGS = 10V, ID = 2.8A
Max rDS(on) = 130mΩ at VGS = 6V, ID = 1.7A
Low Miller Charge
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Optimized efficiency at high frequencies
RoHS Compliant
Application
DC - DC Conversion
S
S
G
S
Pin 1
D
D
G
S
5
6
7
8
4
3
2
1
S
S
D
D
D
D
D
D
Power 56 (Bottom view)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
250
±20
14
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
Drain Current -Continuous (Silicon limited)
-Continuous
TC = 25°C
TA = 25°C
ID
(Note 1a)
(Note 1a)
2.8
A
-Pulsed
16
Power Dissipation
TC = 25°C
TA = 25°C
78
PD
W
Power Dissipation
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.6
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12mm
Quantity
FDMS2734
FDMS2734
Power 56
3000 units
1
©2007 Fairchild Semiconductor Corporation
FDMS2734 Rev.C
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
250
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
250
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 200V,
1
µA
VGS = ±20V, VGS = 0V
±100
nA
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
2
3
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-11
mV/°C
VGS = 10V, ID = 2.8A
105
110
217
11
122
130
258
rDS(on)
Drain to Source On Resistance
VGS = 6V, ID = 1.7A
mΩ
VGS = 10V, ID = 2.8A TJ = 125°C
VDS = 10V, ID = 2.8A
gFS
Forward Transconductance
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1775
80
2365
110
40
pF
pF
pF
Ω
VDS = 100V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
25
f = 1MHz
0.9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
22
10
36
12
30
7
36
20
58
22
42
ns
ns
VDD = 125V, ID = 2.8A
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg(TOT)
Qgs
Qgd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10V
nC
nC
nC
VDD = 125V
ID = 2.8A
9
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 2.8A (Note 2)
0.75
79
1.20
119
321
V
ns
nC
IF = 2.8A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
214
Notes:
2
1:
R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
a. 50°C/W when mounted on
a 1 in pad of 2 oz copper
2
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
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2
FDMS2734 Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= 6V
25
20
15
10
5
GS
V
= 10V
GS
VGS = 5V
VGS = 4.5V
V
= 5V
GS
VGS = 6V
V
= 4.5V
GS
VGS = 10V
0
0
5
10
15
20
25
30
0
1
2
3
4
5
ID, DRAIN CURRENT(A)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
400
320
240
160
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
I
D
= 7A
I
= 2.8A
D
V
= 10V
GS
T
J
= 150oC
T
J
= 25oC
-75 -50 -25
0
25 50 75 100 125 150
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
16
20
10
PULSE DURATION = 80µs
V
GS
= 0V
DUTY CYCLE = 0.5%MAX
12
8
1
0.1
T
J
= 150oC
T
= -55oC
= 25oC
J
T
J
= 150oC
T
= -55oC
J
T
J
T
= 25oC
J
4
0.01
1E-3
0
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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3
FDMS2734 Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
10
8
3000
1000
C
iss
V
DD
=75V
V
= 125V
DD
C
6
4
2
0
oss
V
DD
= 175V
100
C
rss
f = 1MHz
= 0V
V
GS
10
0.1
1
10
100
0
8
16
24
32
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
4
3
15
12
9
V
GS
= 10V
V
GS
= 6V
2
6
TJ = 25oC
TJ = 125oC
3
o
R
θJC
= 1.6 C/W
1
0.01
0
25
0.1
0.5
50
75
100
125
150
o
T , CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE(ms)
C
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
3000
20
10
FOR TEMPERATURES
o
1000
100
10
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
VGS = 10V
100us
1
150 – T
A
----------------------
I = I
25
125
1ms
o
T
= 25 C
A
0.1
10ms
100ms
1
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
J = MAX RATED
1s
DC
SINGLE PULSE
T
o
T
A = 25 C
0.1
1E-3
0.1
1
10
100
1000
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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4
FDMS2734 Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
1E-3
1E-4
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA A
SINGLE PULSE
10-2
10-3
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
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5
FDMS2734 Rev.C
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6
FDMS2734 Rev.C
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
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any time without notice in order to improve design.
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This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDMS2734 Rev.C
7
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