FDMC86261P [ONSEMI]
P 沟道,Power Trench® MOSFET,-150V,-9A,160mΩ;![FDMC86261P](http://pdffile.icpdf.com/pdf2/p00366/img/icpdf/FDMC86261P_2239796_icpdf.jpg)
型号: | FDMC86261P |
厂家: | ![]() |
描述: | P 沟道,Power Trench® MOSFET,-150V,-9A,160mΩ 开关 脉冲 光电二极管 晶体管 |
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June 2014
FDMC86261P
P-Channel PowerTrench® MOSFET
-150 V, -9 A, 160 mΩ
Features
General Description
Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A
Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® technology. This
very high density process is especially tailored to minimize
on-state resistance and optimized for superior switching
performance.
Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This product is optimised for fast switching applications as
well as load switch applications
Applications
Active Clamp Switch
Load Switch
100% UIL Tested
RoHS Compliant
Top
Bottom
Pin 1
D
D
D
D
S
S
S
G
S
S
S
G
D
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-150
V
V
±25
TC = 25 °C
TA = 25 °C
-9
-2.7
ID
(Note 1a)
(Note 3)
A
-Pulsed
-20
EAS
Single Pulse Avalanche Energy
Power Dissipation
121
mJ
W
TC = 25 °C
TA = 25 °C
40
PD
Power Dissipation
(Note 1a)
2.3
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to + 150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3.1
53
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12 mm
Quantity
FDMC86261P
FDMC86261P
Power 33
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
-150
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = -250 μA, referenced to 25 °C
-132
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -120 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
-1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
-2
-3
6
-4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = -250 μA, referenced to 25 °C
GS = -10 V, ID = -2.4 A
mV/°C
V
130
141
218
9
160
185
269
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = -6 V, ID = -2.2 A
mΩ
VGS = -10 V, ID = -2.4 A,TJ = 125 °C
VDS = -10 V, ID = -2.4 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1021
87
1360
120
10
pF
pF
pF
Ω
VDS = -75 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
4.7
0.1
1.7
3.4
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
11
2.4
18
20
10
33
20
24
16
ns
ns
VDD = -75 V, ID = -2.4 A,
V
GS = -10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
9.2
17
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to -10 V
VGS = 0 V to -6 V
nC
nC
nC
nC
VDD = -75 V,
D = -2.4 A
11
I
4.2
3.7
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = -2.4 A
(Note 2)
(Note 2)
-0.81
-0.80
81
-1.3
-1.2
130
315
V
V
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = -1.9 A
trr
Reverse Recovery Time
ns
nC
IF = -2.4 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
197
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θJA
θJC
θCA
the user's board design.
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper
a) 53 °C/W when mounted on
a1in pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T = 25 °C; P-ch: L = 3 mH, I = -9 A, V = -150 V, V = -10 V. 100% test at L = 0.1 mH, I = -28 A.
J
AS
DD
GS
AS
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
4
3
2
1
0
20
VGS = -10 V
VGS = -4.5 V
VGS = -5.5 V
VGS = -6 V
15
VGS = -5 V
VGS = -5 V
10
VGS = -5.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
5
VGS = -10V
VGS = -6 V
VGS = -4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
5
10
15
20
0
1
2
3
4
5
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
500
2.2
ID = -2.4 A
VGS = -10V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
400
300
200
100
0
ID = -2.4 A
TJ = 125 o
C
TJ = 25 o
C
4
5
6
7
8
9
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
100
20
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
1
15
10
5
VDS = -10 V
TJ = 150 o
C
TJ = 150 o
C
TJ = 25 oC
0.1
TJ = 25 o
C
TJ = -55 o
C
0.01
0.001
TJ = -55 o
C
0
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
10000
1000
100
10
ID = -2.4 A
VDD = -75 V
8
Ciss
VDD = -100 V
VDD = -50 V
6
4
2
0
Coss
Crss
f = 1 MHz
= 0 V
V
GS
1
0.1
0
4
8
12
16
20
1
10
100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
12
9
50
RθJC = 3.1 oC/W
TJ = 25 oC
TJ = 100 o
VGS = -10 V
10
Limited by Package
C
6
TJ = 125 o
C
VGS = -6 V
3
0
25
1
0.001
0.01
0.1
1
10 20
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
30
10
1000
SINGLE PULSE
RθJA = 125 oC/W
100 μs
T
A = 25 oC
100
10
1
1 ms
10 ms
100 ms
1 s
THIS AREA IS
LIMITED BY r
DS(on)
0.1
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
CURVE BENT TO
MEASURED DATA
10 s
DC
T
A = 25 oC
1
0.01
0.005
0.5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
0.1
1
10
100
500
100 1000
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
0.01
Z
θJA
θJA
o
R
= 125 C/W
θJA
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
SINGLE PULSE
J
DM
θJA A
1
2
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
www.fairchildsemi.com
5
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, spe-
cifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEU-C08
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
www.fairchildsemi.com
6
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®
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and Better™
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®
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I68
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©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
7
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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