FDMC86320 [ONSEMI]
N 沟道,Power Trench® MOSFET,80V,22A,11.7mΩ;型号: | FDMC86320 |
厂家: | ONSEMI |
描述: | N 沟道,Power Trench® MOSFET,80V,22A,11.7mΩ 开关 脉冲 光电二极管 晶体管 |
文件: | 总7页 (文件大小:247K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
Pin 1
S
S
S
G
80 V, 22 A, 11.7 mW
D
D
D
D
FDMC86320
Bottom
Top
General Description
WDFN8 3.3x3.3, 0.65P
CASE 511DH
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node ringing of
DC/DC converters using either synchronous or conventional
switching PWM controllers. It has been optimized for low gate charge,
MARKING DIAGRAM
low r , fast switching speed and body diode reverse recovery
DS(on)
performance.
FDMC
86320
&Z&K&2
Features
• Max r
= 11.7 mW at V = 10 V, I = 10.7 A
GS D
DS(on)
• Max r
= 16 mW at V = 8 V, I = 8.5 A
GS D
DS(on)
• MSL1 Robust Package Design
• 100% UIL Tested
FDMC
86320
&Z
&K
&2
= Specific Device Code
= Specific Device Code
= Assembly Location
= Lot Run Traceability Code
= Date Code (Year and Week)
• These Devices are Pb−Free, Halide Free and are RoHS Compliant
Applications
• Primary DC−DC Switch
• Motor Bridge Switch
• Synchronous Rectifier
PIN ASSIGNMENT
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
S
S
1
2
8
7
D
D
Symbol
VDS
Parameter
Drain to Source Voltage
Ratings Units
80
20
V
V
A
VGS
Gate to Source Voltage
Drain Current
S
3
4
6
5
D
D
ID
−Continuous
−Continuous
−Pulsed
TC = 25°C
TA = 25°C (Note 1a)
22
10.7
50
G
N−Channel MOSFET
EAS
PD
Single Pulse Avalanche Energy (Note 3)
Power Dissipation TC = 25°C
60
40
mJ
W
Power Dissipation TA = 25°C (Note 1a)
2.3
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
TJ, TSTG Operating and Storage Junction Temperature
Range
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
RθJC
Thermal Resistance, Junction to Case
(Note 1)
3.1
°C/W
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
53
°C/W
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
May, 2023 − Rev. 2
FDMC86320/D
FDMC86320
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
80
V
DSS
D
GS
DBV
/DT Breakdown Voltage Temperature
= 250 mA, referenced to 25°C
56
mV/°C
DSS
J
D
Coefficient
mA
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 48 V, V = 0 V
1
DSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2.4
3.5
4.5
V
GS(th)
GS
DS
D
DV
/DT Gate to Source Threshold Voltage
= 250 mA, referenced to 25°C
−11
mV/°C
GS(th)
J
D
Temperature Coefficient
r
Static Drain to Source On Resistance
mW
V
V
V
V
= 10 V, I = 10.7 A
9.7
11.4
15
11.7
16
DS(on)
GS
D
= 8 V, I = 8.5 A
GS
GS
DS
D
= 10 V, I = 10.7 A, T = 125°C
18
D
J
g
FS
Forward Transconductance
= 10 V, I = 10.7 A
20
S
D
DYNAMIC CHARACTERISTICS
V
= 40 V, V = 0 V,
C
Input Capacitance
1985
353
12
2640
469
30
pF
pF
pF
W
DS
GS
iss
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.5
g
SWITCHING CHARACTERISTICS
V
V
= 40 V, I = 10.7 A,
D
t
Turn−On Delay Time
Rise Time
15
8
28
16
35
10
41
34
ns
ns
DD
GS
d(on)
= 10 V, R
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
20
5
ns
d(off)
t
f
ns
V
D
= 40 V
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
V
= 0 V to 10 V
= 0 V to 8 V
29
24
10
6.9
nC
nC
nC
nC
DD
g(TOT)
GS
I = 10.7 A
g(TOT)
Qgs
GS
Qgd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
V
= 0 V, I = 10.7 A (Note 2)
0.84
0.75
38
1.3
1.2
61
SD
GS
S
= 0 V, I = 2 A (Note 2)
GS
S
I = 10.7 A, di/dt = 100 A/ms
F
t
Reverse Recovery Time
ns
rr
Q
Reverse Recovery Charge
27
43
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
θ
θ
JA
by design while R
is determined by the user’s board design.
θ
CA
a. 53 °C/W when mounted on
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper.
2
pad of 2 oz copper.
a 1 in
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting T = 25 °C, N−ch: L = 0.3 mH, I = 20 A, V = 72 V, V = 10 V.
J
AS
DD
GS
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2
FDMC86320
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
5
50
40
30
20
10
0
V
= 10 V
GS
V
GS
= 5.5 V
V
= 6.5 V
GS
V
GS
= 6 V
V
GS
= 8 V
4
3
V
= 7 V
GS
V
GS
= 6.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 6 V
GS
V
GS
= 7 V
2
1
0
V
GS
= 8 V
V
GS
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 5.5 V
0
1
2
3
4
5
0
10
20
30
40
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.8
40
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 10.7 A
D
1.6
1.4
1.2
1.0
0.8
0.6
= 10 V
GS
30
I
D
= 10.7 A
20
T = 125°C
J
10
0
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to
vs. Junction Temperature
Source Voltage
50
50
PULSE DURATION = 80 ms
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
40
10
1
V
DS
= 5 V
T = 150°C
J
30
20
10
0
T = 25°C
J
T = 150°C
J
0.1
T = 25°C
J
T = −55°C
J
0.01
0.001
T = −55°C
J
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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3
FDMC86320
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
3000
V
DD
= 40 V
I
D
= 10.7 A
C
iss
1000
V
DD
= 50 V
V
DD
= 30 V
C
oss
6
100
4
C
rss
2
f = 1 MHz
10
5
V
GS
= 0 V
0
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
100
0
5
10
15
20
25
30
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
30
50
40
30
20
10
0
V
GS
= 10 V
10
T = 25°C
J
V
GS
= 8 V
T = 100°C
J
Limited by Package
= 3.1°C/W
T = 125°C
J
R
q
JC
1
0.01
25
50
75
100
125
150
0.1
1
10
50
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100
2000
1000
V
GS
= 10 V
100 ms
10
1
100
10
1 ms
THIS AREA IS
LIMITED BY r
10 ms
DS(on)
100 ms
1 s
SINGLE PULSE
0.1
0.01
SINGLE PULSE
= 125°C/W
T = 25°C
A
T
J
= MAX RATED
R
q
JA
R
q
= 125°C/W
JA
10 s
DC
1
0.5
10
T
A
= 25°C
−4
−3
−2
−1
0.01
0.1
1
10
100 400
10
10
10
1
10
100 1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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4
FDMC86320
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
t
1
0.02
0.01
t
2
0.01
Notes:
Duty Factor: D = t / t
SINGLE PULSE
1
2
R
q
= 125°C/W
JA
Peak T = P
× Z
× R
+ T
JA A
q
q
J
DM
JA
0.001
0.0005
−2
10−4
10−3
10
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
ORDERING INFORMATION
Device
†
Device Marking
Package Type
Shipping
FDMC86320
FDMC86320
WDFN8 3.3x3.3, 0.65P
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DH
ISSUE O
DATE 31 JUL 2016
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
3.30
(1.70)
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
0.65
0.42(8X)
2X
1.95
RECOMMENDED LAND PATTERN
0.75 0.05
0.10 C
0.15 0.05
0.08 C
0.025 0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO−229
B. DIMENSIONS ARE IN MILLIMETERS.
3.30 0.05
2.27 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
(0.35)
PIN #1 IDENT
0.50 0.05 (4X)
(0.79)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
(1.15)
3.30 0.05
2.00 0.05
R0.15
0.30 0.05 (3X)
8
5
0.35 0.05 (8X)
0.65
0.10
0.05
C A B
C
1.95
BOTTOM VIEW
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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