FDMC8651 [ONSEMI]
N 沟道 Power Trench® MOSFET 30V，20A，6.1mΩ;
| 型号： | FDMC8651 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 Power Trench® MOSFET 30V，20A，6.1mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：478K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
Pin 1
G
S
S
S
D
D
30 V, 20 A, 6.1 mW
D
D
PQFN8 3.3 y 3.3, 0.65P
(Power 33)
FDMC8651
CASE 483AK
General Description
This device has been designed specifically to improve the efficiency
of DC/DC converters. Using new techniques in MOSFET
construction, the various components of gate charge and capacitance
have been optimized to reduce switching losses. Low gate resistance
and very low Miller charge enable excellent performance with both
ELECTRICAL CONNECTION
D
5
6
7
8
4
G
S
3
2
1
D
D
adaptive and fixed dead time gate drive circuits. Very low r
has
DS(on)
S
S
been maintained to provide a sub logic−level device.
D
Features
• Max r
= 6.1 mW at V = 4.5 V, I = 15 A
GS D
= 9.3 mW at V = 2.5 V, I = 12 A
GS D
DS(on)
N−Channel MOSFET
Max r
DS(on)
• Low Profile − 1 mm Max in Power 33
• 100% UIL Tested
MARKING DIAGRAM
• Pb−Free, Halide Free and RoHS Compliant
ZXYYKK
FDMC
8651
Applications
• Synchronous Rectifier
• 3.3 V Input Synchronous Buck Switch
Z
= Assembly Plant Code
XYY
KK
= 3−Digit Date Code Format
= 2−Alphanumeric Lot Run Traceability
Code
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Drain−Source Voltage
Value
30
Unit
V
V
DS
FDMC8651 = Specific Device Code
V
GS
Gate−Source Voltage
12
V
I
Drain Current
A
D
ORDERING INFORMATION
– Continuous (Package Limited)
– Continuous (Silicon Limited)
– Continuous (Note 1a)
– Pulsed
T
T
A
= 25°C
= 25°C
20
64
15
60
C
C
†
Device
Package
Shipping
T = 25°C
FDMC8651
PQFN8
(Pb−Free/
Halide Free)
3000 /
Tape & Reel
E
AS
Single Pulse Avalanche Energy (Note 3)
128
mJ
W
P
Power Dissipation
Power Dissipation (Note 1a)
T
= 25°C
C
41
2.3
D
T = 25°C
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
T , T
Operating and Storage Junction
Temperature Range
–55 to
+150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction to Case
3
°C/W
q
JC
R
Thermal Resistance,
Junction to Ambient (Note 1a)
53
°C/W
q
JA
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
February, 2023 − Rev. 4
FDMC8651/D
FDMC8651
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
DBV
/
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
27.5
mV/°C
DSS
D
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
−
−
−
−
1
mA
DS
GS
I
=
12 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
0.8
1.1
1.5
V
GS(th)
GS
DS D
DV
/
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, Referenced to 25°C
−
−4.4
−
mV/°C
GS(th)
J
D
DT
r
Static Drain–Source
On–Resistance
V
GS
V
GS
V
GS
= 4.5 V, I = 15 A
−
−
−
4.3
6.2
6.3
6.1
9.3
9.0
mW
DS(on)
D
= 2.5 V, I = 12 A
D
= 4.5 V, I = 15 A, T = 125°C
D
J
g
FS
Forward Transconductance
V
DS
= 5 V, I = 15 A
−
91
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHz
−
−
−
−
2530
865
140
0.8
3365
1150
205
−
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
g
SWITCHING CHARACTERISTICS
t
Turn–On Delay Time
Rise Time
V
V
= 15 V, I = 15 A,
−
−
−
−
−
−
−
18
9
31
18
56
12
27.2
−
ns
ns
d(on)
DD
GS
D
= 4.5 V, R
= 6 W
GEN
t
r
t
Turn–Off Delay Time
Fall Time
35
6
ns
d(off)
t
f
ns
Q
Total Gate Charge at 4.5 V
Total Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 15 V, I = 15 A
19.4
4.8
4.2
nC
nC
nC
g(TOT)
D
Q
Q
gs
−
gd
DRAIN–SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 15 A (Note 2)
−
−
−
−
0.8
0.7
35
1.3
1.2
55
V
SD
GS
S
= 0 V, I = 1.7 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 15 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
17
30
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a) 53°C/W when mounted
b) 125°C/W when mounted
on a minimum pad of 2 oz. copper.
2
on a 1 in pad of 2 oz. copper.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
3. Starting T = 25°C; N−ch: L = 1 mH, I = 16 A, V = 27 V, V = 10 V.
J
AS
DD
GS
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2
FDMC8651
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
60
50
6
5
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 2.5 V
GS
V
= 2.2 V
GS
V
GS
= 1.8 V
V
GS
= 2 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
4
3
2
40
30
20
V
GS
= 2.2 V
V
GS
= 4.5 V
V
= 2.5 V
GS
V
GS
= 2 V
10
0
1
0
V
GS
= 4.5 V
50
V
= 1.8 V
GS
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
60
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.8
1.6
20
15
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 15 A
D
= 4.5 V
GS
I
D
= 15 A
1.4
1.2
T = 125°C
J
1.0
0.8
5
0
T = 25°C
J
0.6
4.5
25 50
75 100 125 150
1.5
2.0
2.5
3.5
4.0
−75 −50 −25
0
3.0
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to Source
vs. Junction Temperature
Voltage
60
10
60
50
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
V
DS
= 5 V
T = 150°C
J
40
30
T = 25°C
J
1
0.1
T = 150°C
J
T = −55°C
J
20
10
T = 25°C
J
0.01
0.001
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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3
FDMC8651
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
5000
4.5
4
I
D
= 15 A
V
DD
= 10 V
C
V
DD
= 20 V
iss
3
2
1000
V
DD
= 15 V
C
oss
1
0
f = 1 MHz
= 0 V
100
50
V
GS
C
rss
1
0
4
8
12
16
20
24
0.1
10
, Drain to Source Voltage (V)
DS
30
Q , Gate Charge (nC)
g
V
Figure 8. Capacitance vs. Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
65
52
39
26
30
10
V
GS
= 4.5 V
T = 25°C
J
V
GS
= 2.5 V
T = 100°C
J
13
0
T = 125°C
J
R
= 3°C/W
Limited by Package
q
JC
1
0.01
0.1
1
10
100 300
25
50
75
100
125
150
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100
2000
1000
SINGLE PULSE
V
GS
= 10 V
R
= 125°C/W
q
JA
T = 25°C
A
10
1
1 ms
100
10
1
10 ms
THIS AREA IS
LIMITED BY r
DS(on)
100 ms
1 s
SINGLE PULSE
0.1
0.01
T = MAX RATED
10 s
DC
J
R
= 125°C/W
q
JA
T = 25°C
A
0.5
10
−4
−3
−2
−1
1
100
10
10
10
10
1
10
100 1000
0.01
0.1
V
DS
, Drain to Source Voltage (V)
t, Pulse Width (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
FDMC8651
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
P
DM
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1E−3
1
2
R
= 125°C/W
PEAK T = P
× Z
× R
+ T
JA A
q
JA
q
q
J
DM
JA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 3.3X3.3, 0.65P
CASE 483AK
ISSUE B
DATE 12 OCT 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13660G
PQFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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