FDMC86265P [ONSEMI]
P 沟道，PowerTrench® MOSFET，-150V，-2.6A，1.2Ω;
| 型号： | FDMC86265P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-150V，-2.6A，1.2Ω 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel,
POWERTRENCH)
Pin 1
S
S
S
G
-150 V, -2.6 A, 1.2 W
D
D
D
D
FDMC86265P
Bottom
Top
General Description
WDFN8 3.3x3.3, 0.65P
CASE 511DH
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for the on−state
resistance and yet maintain superior switching performance.
MARKING DIAGRAM
Features
• Max r
• Max r
= 1.2 W at V = −10 V, I = −1 A
GS D
DS(on)
DS(on)
FDMC
86265P
&Z&K&2
= 1.4 W at V = −6 V, I = −0.9 A
GS
D
• Very Low RDS−On Mid Voltage P−Channel Silicon Technology
Optimized for Low Qg
• This Product is Optimized for Fast Switching Applications as well as
Load Switch Applications
• 100% UIL Tested
• These Devices are Pb−Free, Halide Free and are RoHS Compliant
FDMC
86265P
&Z
&K
&2
= Specific Device Code
= Specific Device Code
= Assembly Location
= Lot Run Traceability Code
= Date Code (Year and Week)
Applications
• Active Clamp Switch
• Load Switch
PIN ASSIGNMENT
S
S
1
2
8
7
D
D
S
3
4
6
5
D
D
G
P−Channel MOSFET
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
May, 2023 − Rev. 2
FDMC86265P/D
FDMC86265P
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Rating
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
−150
25
V
I
D
Continuous (Note 5)
Continuous (Note 5)
Continuous (Note 1a)
Pulsed (Note 4)
T
T
= 25°C
−2.6
A
C
= 100°C
−1.65
C
T = 25°C
A
−1
−9
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation
6
16
mJ
W
AS
P
T = 25°C
C
D
Power Dissipation (Note 1a)
T = 25°C
A
2.3
T , T
Operating and Storage Junction Temperature Range
−55 to + 150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
RqJC
Parameter
Rating
7.5
Unit
Thermal Resistance, Junction to Case
°C/W
RqJA
Thermal Resistance, Junction to Ambient (Note 1a)
53
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
CA
a. 53°C/W when mounted on
b. 125°C/W when mounted on
a minimum pad of 2 oz copper
2
a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting T = 25°C; P−ch: L = 3 mH, I = −2 A, V = −150 V, V = −10 V. 100% test al L = 0.1 mH, I = −9 A.
J
AS
DD
GS
AS
4. Pulsed Id please refer to Figure 11 and Figure 24 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
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2
FDMC86265P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown
Voltage
I
I
= −250 mA, V = 0 V
−150
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= −250 mA, referenced to 25°C
−
−125
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −120 V, V = 0 V
−
−
−
−
−1
mA
DSS
GSS
DS
GS
I
=
25 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−2
−3.2
−4
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, referenced to 25°C
−
5
−
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source
On Resistance
V
GS
V
GS
V
GS
V
DS
= −10 V, I = −1 A
−
−
−
−
0.86
0.95
1.53
1.9
1.2
1.4
2.2
−
W
DS(on)
D
= −6 V, I = −0.9 A
D
= −10 V, I = −1 A, T = 125°C
D
J
g
FS
Forward Transconductance
= −10 V, I = −1 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −75 V, V = 0 V, f = 1 MHz
−
−
158
16
0.7
3
210
25
5
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
0.1
7.5
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= −75 V, I = −1 A, V = −10 V,
GEN
−
−
−
−
−
−
−
5.8
2.2
8
12
10
16
13
4
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
6.4
2.8
0.8
0.7
ns
Q
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
V
V
= −75 V, I = −1 A, V = 0 V to −10 V
nC
nC
nC
g(TOT)
DD
D
GS
Q
Q
= −75 V, I = −1 A
−
gs
gd
DD
D
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0 V, I = −1 A (Note 2)
−
−0.87
−1.3
V
S
t
Reverse Recovery Time
I = −1 A, di/dt = 100 A/ms
F
−
−
50
78
80
ns
rr
Q
Reverse Recovery Charge
124
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FDMC86265P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
3.0
2.0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= −10 V
V
= −8 V
GS
2.5
2.0
1.5
1.0
0.5
1.5
1.0
0.5
0
V
GS
= −4.5 V
V
= −6 V
GS
V
= −5 V
GS
V
GS
= −5 V
V
GS
= −6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= −4.5 V
V
= −10 V
2.0
GS
V
= −8 V
GS
0.0
0.5
1.0
1.5
0
1
2
3
4
5
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
2.2
4000
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= −1 A
D
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
= −10 V
GS
I
D
= −1 A
3000
2000
T = 125°C
J
1000
0
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150
6
4
5
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
2.0
4
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
1
1.5
T = 150°C
J
V
DS
= −5 V
T = 150°C
J
0.1
T = 25°C
1.0
0.5
0.0
J
T = 25°C
J
0.01
0.001
T = −55°C
J
T = −55°C
J
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMC86265P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
1000
V
= −75 V
I
D
= −1 A
DD
C
iss
100
10
1
V
DD
= −50 V
C
oss
rss
6
V
DD
= −100 V
4
C
f = 1 MHz
= 0 V
2
V
GS
0.1
0.1
0
0.0
1
10
100
0.5
1.0
1.5
2.0
2.5
3.0
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
3.0
2.4
1.8
1.2
0.6
0.0
10
9
8
7
6
5
T = 25°C
J
T = 100°C
J
4
V
= −10 V
GS
3
T = 125°C
J
V
= −6 V
2
GS
R
= 7.5°C/W
q
JC
1
0.001
0.01
0.1
1
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
300
100
10
SINGLE PULSE
R
= 7.5°C/W
q
JC
T
C
= 25°C
100 ms
1
0.1
THIS AREA IS
LIMITED BY r
DS(on)
1 ms
SINGLE PULSE
10 ms
DC
T
J
= MAX RATED
CURVE BENT TO
MEASURED DATA
R
q
= 7.5°C/W
JC
T
C
= 25°C
10
10
0.01
−4
−3
−2
−1
1
10
100
500
10
10
10
1
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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5
FDMC86265P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
0.1
t
1
0.05
0.02
0.01
t
2
Z
R
(t) = r(t) × R
= 7.5°C/W
q
q
JC
JC
q
JC
0.1
SINGLE PULSE
Peak T = P
× Z (t) + T
q
JC C
J
DM
Duty Cycle, D = t / t
1
2
0.05
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
ORDERING INFORMATION
Device
†
Device Marking
Package Type
Shipping
FDMC86265P
FDMC86265P
WDFN8 3.3x3.3, 0.65P
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DH
ISSUE O
DATE 31 JUL 2016
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
3.30
(1.70)
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
0.65
0.42(8X)
2X
1.95
RECOMMENDED LAND PATTERN
0.75 0.05
0.10 C
0.15 0.05
0.08 C
0.025 0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO−229
B. DIMENSIONS ARE IN MILLIMETERS.
3.30 0.05
2.27 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
(0.35)
PIN #1 IDENT
0.50 0.05 (4X)
(0.79)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
(1.15)
3.30 0.05
2.00 0.05
R0.15
0.30 0.05 (3X)
8
5
0.35 0.05 (8X)
0.65
0.10
0.05
C A B
C
1.95
BOTTOM VIEW
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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