FDBL86062-F085 [ONSEMI]
N沟道，PowerTrench®MOSFET，100V，300A，2.0mΩ;
| 型号： | FDBL86062-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N沟道，PowerTrench®MOSFET，100V，300A，2.0mΩ |
| 文件： | 总8页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDBL86062-F085
N-Channel
POWERTRENCH) MOSFET
100 V, 300 A, 2.0 m
ꢀ
www.onsemi.com
D
Features
• Typical R
• Typical Q
= 1.5 mꢀ at V = 10 V, I = 80 A
GS D
DS(on)
= 95 nC at V = 10 V, I = 80 A
g(tot)
GS
D
• UIS Capability
• Qualified to AEC Q101
G
• This Device is Pb−Free and is RoHS Compliant
Applications
S
• Automotive Engine Control
• PowerTrain Management
• Solenoid and Motor Drivers
• Integrated Starter/Alternator
• Primary Switch for 12 V Systems
H−PSOF8L 11.68x9.80
CASE 100CU
MARKING DIAGRAM
$Y&Z&3&K
FDBL86062
$Y
&Z&3
&K
= ON Semiconductor Logo
= Data Code (Year & Week)
= Lot
FDBL86062 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
March, 2019 − Rev. 3
FDBL86062−F085/D
FDBL86062−F085
MOSFET MAXIMUM RATINGS T = 25°C unless otherwise noted
J
Symbol
Parameter
Rating
100
Units
V
DSS
Drain−to−Source Voltage
Gate−to−Source Voltage
V
V
A
V
GS
20
I
D
300
Drain Current - Continuous (V = 10) (Note 1)
T
T
= 25°C
= 25°C
GS
C
Pulsed Drain Current
See Figure 4
352
C
E
AS
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
mJ
W
P
D
429
Derate Above 25°C
2.9
W/°C
T , T
Operating and Storage Temperature
−55 to +175
J
STG
°C
°C/W
°C/W
Thermal Resistance, Junction to Case
0.35
43
R
ꢁ
JC
Maximum Thermal Resistance, Junction to Ambient (Note 3)
R
ꢁ
JA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by silicon.
2. Starting T = 25°C, L = 0.1 mH, I = 84 A, V = 100 V during inductor charging and V = 0 V during time in avalanche.
J
AS
DD
DD
3. R
is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins. R
presented here is based on mounting on a 1 in pad of 2oz copper.
is guaranteed by design, while R
is determined by the board design. The maximum rating
θ
θ
JC
JA
2
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDBL86062−F085
FDBL86062
MO−299A
13”
24 mm
2000 Units
ELECTRICAL CHARACTERISTICS T = 25°C, unless otherwise noted
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
OFF CHARACTERISTICS
B
Drain−to−Source Breakdown Voltage
Drain−to−Source Leakage Current
I
= 250 ꢂ A, V = 0 V
100
−
−
−
−
−
−
5
V
VDSS
D
GS
I
V
V
= 100 V,
= 0 V
T = 25°C
J
ꢂ A
mA
nA
DSS
DS
GS
T = 175°C (Note 4)
J
−
2
I
Gate−to−Source Leakage Current
V
=
20 V
−
100
GSS
GS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
= V , I = 250 ꢂ A
2.0
−
3.1
1.5
3.3
4.5
2.0
4.3
V
GS(th)
DS(on)
GS
GS
DS
D
R
I
D
= 80 A,
= 10 V
T = 25°C
J
mꢀ
V
T = 175°C (Note 4)
−
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 50 V, V = 0 V,
−
−
−
−
−
−
−
−
6970
3950
29
−
−
pF
iss
DS
GS
f = 1 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Gate Resistance
−
rss
R
f = 1 MHz
0.4
95
−
ꢀ
g
Q
Total Gate Charge at 10 V
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
V
V
= 0 to 10 V
= 0 to 2 V
V = 80 V
DD
124
−
nC
g(ToT)
GS
I
D
= 80 A
Q
13
g(th)
GS
Q
31
−
gs
gd
Q
20
−
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2
FDBL86062−F085
ELECTRICAL CHARACTERISTICS (continued) T = 25°C, unless otherwise noted
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
SWITCHING CHARACTERISTICS
t
Turn−On Time
Turn−On Delay
Rise Time
V
DD
V
GS
= 50 V, I = 80 A,
−
−
−
−
−
−
−
31
25
36
9
73
−
ns
on
D
= 10 V, R
= 6 ꢀ
GEN
t
d(on)
t
r
−
t
Turn−Off Delay
Fall Time
−
d(off)
t
f
−
t
Turn−Off Time
−
59
off
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source−to−Drain Diode Voltage
I
I
= 80 A, V = 0 V
−
−
−
−
−
−
1.25
1.2
V
SD
SD
GS
= 40 A, V = 0 V
SD
GS
t
Reverse−Recovery Time
Reverse−Recovery Charge
I = 80 A, dI /dt = 100 A/μs, V = 80 V
F
115
172
150
224
ns
rr
SD
DD
Q
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
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3
FDBL86062−F085
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
0
0
25
50
75
100
125
150 175
25
50
75
100
125
150 175
200
T , CASE TEMPERATURE (°C)
C
T , CASE TEMPERATURE (°C)
C
Figure 1. Normalized Power Dissipation vs.
Case Temperature
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
2
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
0.10
P
0.05
0.02
DM
0.01
t
1
0.1
SINGLE PULSE
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P x Z
x R
+ T
ꢁ JA C
J
DM
ꢁ
J
A
0.01
10−5
10−4
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
VGS = 10 V
T
= 25°C
FOR TEMPERATURES
J
ABOVE 25°C DERATE PEAK
CURRENT AS FOLLOWS:
175 − T
C
I
I =
25
150
SINGLE PULSE
100
10−5
10−4
10−3
10−2
10−1
11
0
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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4
FDBL86062−F085
TYPICAL CHARACTERISTICS (continued)
2000
1000
1000
If R = 0
tAV = (L)(I )/(1.3*RATED BV
− V
)
AS
DSS
DD
If R 00
tAV = (L/R)ln[(I *R)/(1.3*RATED BV
− V ) +1]
DD
AS
DSS
100
10
1
100
10
1
STARTING TJ = 25°C
OPERATION IN THIS
AREA MAY BE
100 ꢂ s
LIMITED BY r
DS(on)
STARTING TJ = 150°C
1 ms
SINGLE PULSE
T
J
= MAX RATED
10 ms
100 ms
T
= 25°C
J
0.1
0.1
1
10
100
500
0.001 0.01
0.1
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (ms)
AV
NOTE: Refer to ON Semiconductor Application
Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
350
350
PULSE DURATION = 250 ꢂ s
VGS = 0 V
DUTY CYCLE = 0.5% MAX
300
250
100
VDD = 5 V
T
J
= 175°C
T
J
= 25°C
200
150
100
10
T
J
= −55°C
T
J
= 25°C
J
T
= 175°C
1
50
0
0.1
0.0
3
4
5
6
7
0.2
0.2
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
350
300
250
200
150
100
50
350
300
250
200
150
100
50
250 ꢂ s PULSE WIDTH
250 ꢂ s PULSE WIDTH
T = 175°C
J
T
J
= 25°C
VGS
15 V Top
10 V
8 V
VGS
15 V Top
10 V
8 V
7 V
7 V
6 V
6 V
5.5 V
5ꢀV
Bottom
5.5 V
5 V Bottom
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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5
FDBL86062−F085
TYPICAL CHARACTERISTICS (continued)
30
25
20
15
10
5
2.5
PULSE DURATION = 250 ꢂ s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 250 ꢂ s
DUTY CYCLE = 0.5% MAX
ID = 80 A
2.0
1.5
1.0
0.5
T
= 175°C
ID = 80 A
VGS = 10 V
J
T
J
= 25°C
0
4
5
6
7
8
9
10
−80 −40
0
40
80
120
160 200
V
GS
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE(°C)
J
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature
1.3
1.1
0.9
0.7
0.5
0.3
1.10
VGS = V
DS
ID = 5 mA
I
D
= 250 ꢂ A
1.05
1.00
0.95
0.90
−80 −40
0
40
80
120
160 200
−80 −40
0
40
80
120
160 200
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
10
Ciss
I
D
= 80 A
VDD = 50 V
DD = 40 V
8
6
4
2
0
Coss
VDD = 60 V
1000
100
10
V
f = 1 MHz
GS = 0 V
V
Crss
0.1
1
10
100
0
20
40
60
80
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Gate Charge vs. Gate to Source
Voltage
POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE C
DATE 22 MAY 2023
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
= Assembly Location
= Year
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
XXXX = Specific Device Code
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13813G
H−PSOF8L 11.68x9.80
PAGE 1 OF 1
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